We investigate conduction and free-carrier injection in laterally doped GaAs p-i-n diodes formed in one and two-dimensional photonic crystal (PC) nanocavities. Finite element simulations show that the lateral geometry exhibits high conductivity for a wide range of PC parameters and allows for precise control over current flow, enabling efficient carrier injection despite fast surface recombination. Thermal simulations indicate that the temperature increase during steady-state operation is only 3.3 K in nanobeams and 0.29 K in L3 defect nanocavities. The results affirm the suitability of lateral doping in PC devices and indicate criteria for further design optimization.
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Research Article| July 03 2012
Electrical properties of GaAs photonic crystal cavity lateral p-i-n diodes
Jan Petykiewicz, Gary Shambat, Bryan Ellis, Jelena Vučković; Electrical properties of GaAs photonic crystal cavity lateral p-i-n diodes. Appl. Phys. Lett. 2 July 2012; 101 (1): 011104. https://doi.org/10.1063/1.4732782
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