Fin field-effect transistors are promising next-generation electronic devices, and the identification of dopant positions is important for their accurate characterization. We report atom probe tomography (APT) of silicon fin structures prepared by a recently developed self-regulatory plasma doping (SRPD) technique. Trenches between fin-arrays were filled using a low-energy focused ion beam to directly deposit silicon, which allowed the analysis of dopant distribution by APT near the surface of an actual fin transistor exposed to air. We directly demonstrate that SRPD can achieve a boron concentration above 1 × 1020 atoms/cm3 at the fin sidewall.

1.
International Technology Roadmap for Semiconductors 2009 Edition, Design, http://www.itrs.net/.
2.
N.
Collaert
,
S.
Brus
,
A.
Dc Keersgieter
,
A.
Dixit
,
I.
Ferain
,
M.
Goodwin
,
A.
Kottantharayil
,
R.
Rooyackers
,
P.
Verheyen
,
Y.
Yim
, et al, in
Proceedings of ICICDT
, (
IEEE
,
Austin, TX
,
2005
), pp.
187
194
.
3.
T. F.
Kelly
and
M. K.
Miller
,
Rev. Sci. Instrum.
78
,
031101
(
2007
).
4.
D. J.
Larson
,
D.
Lawrence
,
W.
Lefebvre
,
D.
Olson
,
T. J.
Prosa
,
D. A.
Reinhard
,
R. M.
Ulfig
,
P. H.
Clifton
,
J. H.
Bunton
,
D.
Lenz
 et al,
J. Phys. Conf.
326
,
012030
(
2011
).
5.
K.
Thompson
,
P. L.
Flaitz
,
P.
Ronsheim
,
D. J.
Larson
, and
T. F.
Kelly
,
Science
317
,
1370
(
2007
).
6.
L. J.
Lauhon
,
P.
Adusumilli
,
P.
Ronsheim
,
P. L.
Flaitz
, and
D.
Lawrence
,
MRS Bull.
34
,
738
(
2009
).
7.
K.
Inoue
,
F.
Yano
,
A.
Nishida
,
H.
Takamizawa
,
T.
Tsunomura
,
Y.
Nagai
, and
M.
Hasegawa
,
Ultramicroscopy
109
,
1479
(
2009
).
8.
K.
Inoue
,
H.
Takamizawa
,
K.
Kitamoto
,
J.
Kato
,
T.
Miyagi
,
Y.
Nakagawa
,
N.
Kawasaki
,
N.
Sugiyama
,
H.
Hashimoto
,
Y.
Shimizu
 et al,
Appl. Phys. Express
4
,
116601
(
2011
).
9.
H.
Takamizawa
,
Y.
Shimizu
,
K.
Inoue
,
T.
Toyama
,
N.
Okada
,
M.
Kato
,
H.
Uchida
,
F.
Yano
,
A.
Nishida
,
T.
Mogami
 et al,
Appl. Phys. Lett.
99
,
133502
(
2011
).
10.
T.
Izumida
,
K.
Okano
,
T.
Kanemura
,
M.
Kondo
,
S.
Inaba
,
S.
Itoh
,
N.
Aoki
, and
Y.
Toyoshima
,
Jpn. J. Appl. Phys.
50
,
04DC15
(
2011
).
11.
M.
Gilbert
,
W.
Vandervorst
,
S.
Koelling
, and
A. K.
Kambham
,
Ultramicroscopy
111
,
530
(
2011
).
12.
A. K.
Kambham
,
J.
Mody
,
M.
Gilbert
,
S.
Koelling
, and
W.
Vandervorst
,
Ultramicroscopy
111
,
535
(
2011
).
13.
B.
Gault
,
F.
Vurpillot
,
A.
Vella
,
M.
Gilbert
,
A.
Menand
,
D.
Blavette
, and
B.
Deconihout
,
Rev. Sci. Instrum.
77
,
043705
(
2006
).
14.
S.
Nagamachi
,
M.
Ueda
, and
J.
Ishikawa
,
J. Vac. Sci. Technol. B
16
(
4
),
2515
(
1998
).
15.
Y.
Sasaki
,
K.
Okashita
,
K.
Nakamoto
,
T.
Kitaoka
,
B.
Mizuno
, and
M.
Ogura
,
Tech. Dig. – Int. Electron Devices Meet.
2008
,
917
.
16.
G.
Zschätzsch
,
Y.
Sasaki
,
S.
Hayashi
,
M.
Togo
,
T.
Chiarella
,
A. K.
Kambham
,
J.
Mody
,
B.
Douhard
,
N.
Horiguchi
,
B.
Mizuno
 et al,
Tech. Dig. – Int. Electron Devices Meet.
2011
,
841
.
17.
Y.
Sasaki
,
K.
Okashita
,
B.
Mizuo
,
M.
Kubota
,
M.
Ogura
, and
O.
Nishijima
,
J. Appl. Phys.
111
,
013712
(
2012
).
18.
K.
Tsutsui
,
T.
Matsuda
,
M.
Watanabe
,
C.
Jin
,
Y.
Sasaki
,
B.
Mizuno
,
E.
Ikenaga
,
K.
Kakushima
,
P.
Ahmet
,
T.
Maruizumi
 et al,
J. Appl. Phys.
104
,
093709
(
2008
).
19.
M. K.
Miller
,
K. F.
Russell
,
K.
Thompson
,
R.
Alvis
, and
D. J.
Larson
,
Microsc. Microanal.
13
,
428
(
2007
).
20.
B.
Gault
,
D.
Haley
,
F.
de Geuser
,
M. P.
Moody
,
E. A.
Marquis
,
D. J.
Larson
, and
B. P.
Geiser
,
Ultramicroscopy
111
,
448
(
2011
).
21.
Y.
Shimizu
,
Y.
Kawamura
,
M.
Uematsu
,
K. M.
Itoh
,
M.
Tomita
,
M.
Sasaki
,
H.
Uchida
, and
M.
Takahashi
,
J. Appl. Phys.
106
,
076102
(
2009
).
22.
Y.
Shimizu
,
Y.
Kawamura
,
M.
Uematsu
,
M.
Tomita
,
T.
Kinno
,
N.
Okada
,
M.
Kato
,
H.
Uchida
,
M.
Takahashi
,
H.
Ito
 et al,
J. Appl. Phys.
109
,
036102
(
2011
).
23.
E.
Cadel
,
F.
Vurpillot
,
R.
Larde
,
S.
Duguay
, and
B.
Deconihout
,
J. Appl. Phys.
106
,
044908
(
2009
).
24.
B.
Gault
,
M. P.
Moody
,
F.
de Geuser
,
D.
Haley
,
L. T.
Stephenson
, and
S. P.
Ringer
,
Appl. Phys. Lett.
95
,
034103
(
2009
).
25.
B.
Gault
,
M. P.
Moody
,
F.
de Geuser
,
L. T.
Stephenson
,
D.
Haley
, and
S. P.
Ringer
,
Microsc. Microanal.
16
,
99
(
2010
).
26.
Though the spatial resolution can be also affected by the reflectron that induce distortions, the regions of interest are located on the same side of reflectron and hence errors should be comparable.
You do not currently have access to this content.