Organic thin film transistors have been fabricated on plastic substrates using a combination of two ultrathin insulating films, namely a 6 nm Al2O3 film (grown by UV-Ozone treatment of a pre-deposited aluminium film) and a 25 nm parylene C film deposited by vapour phase, as gate dielectric. They show a very low leakage current density, around 2 × 10−9 A/cm2, and, most importantly, can be operated at voltages below 1 V. We demonstrate that this low-cost technique is highly reproducible and represents a step forward for the routine fabrication of ultra-low voltage plastic electronics.
REFERENCES
1.
H.
Shirakawa
, E. J.
Louis
, A. G.
Mac Diarmid
, C. K.
Chiang
, and A. J.
Heeger
, J. Chem. Soc., Chem. Commun.
578
(1977
).2.
H.
Koezuka
, A.
Tsumura
, and T.
Ando
, Synth. Met.
18
, 699
(1983
).3.
D. H.
Kim
, D. Y.
Lee
, H. S.
Lee
, W. H.
Lee
, Y. H.
Kim
, J.
In Han
, and K.
Cho
, Adv. Mater.
19
, 678
(2007
).4.
U.
Zschieschang
, F.
Ante
, T.
Yamamoto
, K.
Takimiya
, H.
Kuwabara
, M.
Ikeda
, T.
Sekitani
, T.
Someya
, K.
Kern
, and H.
Klauk
, Adv. Mater.
22
, 982
(2010
).5.
H. C.
Yan
, Z.
Chen
, Y.
Zheng
, C. E.
Newman
, J.
Quin
, F.
Dolz
, M.
Kastler
, and A.
Facchetti
, Nature
457
, 679
(2009
).6.
R. H.
Reuss
, B. R.
Chalamala
, A.
Moussessian
, M. G.
Kane
, A.
Kumar
, D. C.
Zhang
, J. A.
Rogers
, M.
Hatalis
, D.
Temple
, G.
Moddel
et al, Proceedings of the IEEE
93
, 1239
(2005
).7.
G. H.
Gelinck
, H.
Edzer
, A.
Huitema
, E.
van Veenendaal
, E.
Cantatore
, L.
Schrijnemakers
, J. B. P. H.
van der Putten
, T. C. T.
Geuns
, M.
Beenhakkers
, J. B.
Giesbers
et al, Nature Mater.
3
, 106
(2004
).8.
T.
Someya
, Y.
Kato
, T.
Sekitani
, S.
Iba
, Y.
Noguchi
, Y.
Murase
, H.
Kawaguchi
, and T.
Sakurai
, Proc. Natl. Acad. Sci. U.S.A.
102
, 12321
(2005
).9.
M.
Barbaro
, A.
Caboni
, P.
Cosseddu
, G.
Mattana
, and A.
Bonfiglio
, IEEE Trans. Inf. Technol. Biomed.
14
, 758
(2010
).10.
J.
Collet
, O.
Tharaud
, A.
Chapoton
, and D.
Vuillaume
, Appl. Phys. Lett.
76
, 1941
(2000
).11.
M.
Halik
, H.
Klauk
, U.
Zschieschang
, G.
Schmidt
, C.
Dehm
, M.
Schütz
, S.
Maisch
, F.
Effenberger
, M.
Brunnbauer
, and F.
Stellacci
, Nature
431
, 963
(2004
).12.
H.
Klauk
, U.
Zschieschang
, J.
Pflaum
, and M.
Halik
, Nature
445
, 745
(2007
).13.
14.
J. C.
Love
, L. A.
Estroff
, J. K.
Kriebel
, R. G.
Nuzzo
, and G. M.
Whitesides
, Chem. Rev.
105
, 1103
(2005
).15.
F.-C.
Chen
, C.-S.
Chuang
, Y.-S.
Lin
, L.-J.
Kung
, T.-H.
Chen
, and H.-P. D.
Shieh
, Org. Electron.
7
, 435
(2006
).16.
W. C.
Shin
, H.
Moon
, S.
Yoo
, Y.
Li
, and B. J.
Cho
, IEEE Electron Device Lett.
31
, 1308
(2010
).17.
Y.-G.
Ha
, J. D.
Emery
, M. J.
Bedzyk
, H.
Usta
, A.
Facchetti
, and T. J.
Marks
, J. Am. Chem. Soc.
133
, 10239
(2011
).18.
M.-H.
Yoon
, H.
Yan
, A.
Facchetti
, and T.
Marks
, J. Am. Chem. Soc.
127
, 10388
(2005
).19.
X.
Cheng
, M.
Caironi
, Y.-Y.
Noh
, J.
Wang
, C.
Newman
, H.
Yan
, A.
Facchetti
, and H.
Sirringhaus
, Chem. Mater.
22
, 1559
(2010
).20.
C. E.
Murphy
, L.
Yang
, S.
Ray
, L.
Yu
, S.
Knox
, and N.
Stingelin
, J. Appl. Phys.
110
, 093523
(2011
).21.
J. H.
Cho
, J.
Lee
, Y.
Xia
, B. S.
Kim
, Y.
He
, M. J.
Renn
, T. P.
Lodge
, and C. D.
Frisbie
, Nature Mater.
7
, 900
(2008
).22.
L.
Herlogsson
, M.
Cölle
, S.
Tierney
, X.
Crispin
, and M.
Berggren
, Adv. Mater.
22
, 72
(2010
).23.
M. J.
Panzer
and C. D.
Frisbie
, J. Am. Chem. Soc.
129
, 6599
(2007
).24.
L. L.
Chua
, J.
Zaumseil
, J. F.
Chang
, E.
Ou
, H.
Sirringhaus
, and R. H.
Friend
, Nature
434
, 194
(2005
).25.
M.
Kaltenbrunner
, P.
Stadler
, R.
Schwödiauer
, A. W.
Hassel
, N. S.
Sariciftci
, and S.
Bauer
, Adv. Mater.
23
, 4892
(2011
).26.
X.-D.
Dang
, W.
Plieth
, S.
Richter
, M.
Plötner
, and W.-J.
Fischer
, Phys. Status Solidi A
205
, 626
(2008
).27.
A.
Khabari
and F. K.
Urban
III, J. Non-Cryst. Solids
351
, 3536
(2005
).28.
K.
Crain
, Surf. Mount Technol.
9
, 50
(1995
).29.
See supplementary material at http://dx.doi.org/10.1063/1.3691181 for the electrical characterization of bare Al2O3 devices, a comparison of the main electrical parameter in the two different configurations, and a morphological investigation of the employed PET substrate.
30.
F. D.
Fleischli
, S.
Suarez
, M.
Schaer
, and L.
Zuppiroli
, Langmuir
26
, 15044
(2010
).31.
A.
Kahouli
, A.
Sylvestre
, L.
Ortega
, F.
Jomni
, B.
Yangui
, M.
Maillard
, B.
Berge
, J.-C.
Robert
, and J.
Legrand
, Appl. Phys. Lett.
94
, 152901
(2009
).32.
D.
Wright
, B.
Rajalingam
, S.
Selvarasah
, M. R.
Dokmecid
, and A.
Khademhosseini
, Lab Chip
7
, 1272
(2007
).33.
A.
Rolland
, J.
Richard
, J. P.
Kleider
, and D.
Mencaraglia
, J. Electrochem. Soc.
140
, 3679
(1993
).34.
T.
Sekitani
, U.
Zschieschang
, H.
klauk
, and T.
Someya
, Nature Mater.
9
, 1015
(2010
).35.
N. B.
Ukah
, J.
Granstrom
, R. R. S.
Gari
, G. M.
King
, and S.
Guha
, Appl. Phys. Lett.
99
, 243302
(2011
).36.
U.
Zschieschang
, T.
Yamamoto
, K.
Takimiya
, H.
Kuwabara
, M.
Ikeda
, T.
Sekitani
, T.
Someya
, and H.
Klauk
, Adv. Mater.
23
, 654
(2011
).© 2012 American Institute of Physics.
2012
American Institute of Physics
You do not currently have access to this content.