Surface modifications of the dielectric and the metal of pentacene-based field effect transistors using self-assembled monolayer (SAM) were studied. First, a low interfacial trap density and pentacene 2D-growth were favored by the nonpolar and low surface energy of octadecyltrichlorosilane-based SAM. This treatment leaded to increased mobility up to 0.4 cm2 V−1 s−1 and no observable hysteresis on transfer curves. Second, reduced hole injection barrier and contact resistance were achieved by fluorinated thiols deposited on gold contacts resulting in an increased mobility up to 0.6 cm2 V−1 s−1. Finally, a high mobility of 2.6 cm2 V−1 s−1 was achieved by cumulative effects of both treatments.
Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors
Mélanie Devynck, Pascal Tardy, Guillaume Wantz, Yohann Nicolas, Luc Vellutini, Christine Labrugère, Lionel Hirsch; Cumulative effects of electrode and dielectric surface modifications on pentacene-based transistors. Appl. Phys. Lett. 30 January 2012; 100 (5): 053308. https://doi.org/10.1063/1.3681791
Download citation file: