Using a simple micro-imprinting process on flexible substrates, we demonstrate fabrication of self-aligned short channel organic thin film transistors (OTFTs) with significantly reduced parasitic capacitance. The surface topology resulting from the imprinted prism-like structures enables accurate alignment of both the gate and source-drain electrodes. The parasitic overlap capacitance was reduced by 80%, which enables twice higher transition frequency (fT = 10.1 kHz) compared with conventional top-contact OTFT devices. The prism-OTFTs were applied to both p-type (pentacene) and n-type (C60) organic semiconductors to implement low voltage complementary inverters.
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