We demonstrate that nonpolar m-plane surfaces can be generated on uniform GaN nanosheet arrays grown vertically from the (0001)-GaN bulk material. InGaN/GaN multiple quantum wells (MQWs) grown on the facets of these nanosheets are demonstrated by cross-sectional transmission electron microscopy. Owing to the high aspect ratio of the GaN nanosheet structure, the MQWs predominantly grow on nonpolar GaN planes. The results suggest that GaN nanosheets provide a conduction path for device fabrication and also a growth template to reduce the piezoelectric field inside the active region of InGaN-based light emitting diodes.
Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets
Ting-Wei Yeh, Yen-Ting Lin, Byungmin Ahn, Lawrence S. Stewart, P. Daniel Dapkus, Steven R. Nutt; Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets. Appl. Phys. Lett. 16 January 2012; 100 (3): 033119. https://doi.org/10.1063/1.3671182
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