We have investigated temperature dependence (94 K–650 K) of current conduction in semi-insulating 4H-SiC epitaxial layer. The epitaxial layer was grown on highly doped n-type (0001) 4H-SiC substrate using chemical vapor deposition with dichlorosilane precursor. The current—voltage (I-V) characteristics exhibited steps at ∼1 V and ∼70 V that were attributed to the filling of deep level centers by injected electrons. Correlation of the I-V characteristics with the results of thermally stimulated current measurements showed that deep centers peaked at 242 K, 285 K, and 500 K, were responsible for the steps in the I-V characteristics. Slow processes of the injected carrier capture on traps resulted in the I-V characteristic with negative differential resistance.
Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer
Peter G. Muzykov, Ramesh M. Krishna, Krishna C. Mandal; Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer. Appl. Phys. Lett. 16 January 2012; 100 (3): 032101. https://doi.org/10.1063/1.3676270
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