Efficiency enhancement of the blue InGaN light-emitting diodes (LEDs) with InGaN-AlGaN-InGaN barriers is studied numerically. The energy band diagrams, carrier concentrations in quantum wells, radiative recombination rate in active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results suggest that the blue InGaN/InGaN-AlGaN-InGaN LED has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams, which are caused mainly by the reduced polarization charges at the interface between the well and barrier.
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Research Article| January 20 2012
Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers
Yen-Kuang Kuo, Tsun-Hsin Wang, Jih-Yuan Chang; Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers. Appl. Phys. Lett. 16 January 2012; 100 (3): 031112. https://doi.org/10.1063/1.3678341
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