We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO3 layer that consisted of a 3-nm thickness of La-doped SrTiO3 with 6% La embedded in a SrTiO3 film. Results are compared to a thick, uniformily doped La:SrTiO3 layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti3+ in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.
Electronic structure of delta-doped La:SrTiO3 layers by hard x-ray photoelectron spectroscopy
A. M. Kaiser, A. X. Gray, G. Conti, B. Jalan, A. P. Kajdos, A. Gloskovskii, S. Ueda, Y. Yamashita, K. Kobayashi, W. Drube, S. Stemmer, C. S. Fadley; Electronic structure of delta-doped La:SrTiO3 layers by hard x-ray photoelectron spectroscopy. Appl. Phys. Lett. 25 June 2012; 100 (26): 261603. https://doi.org/10.1063/1.4731642
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