The electronic structure of bulk ZnX (X = O, S, Se, and Te) under uniaxial strain along the  direction or equibiaxial strain along the (0001) plane is investigated using hybrid density functional theory calculations and many-body perturbation theory. It is shown that compressive uniaxial (or tensile equibiaxial) strains lead to a structural phase transition in all the ZnX systems. This is accompanied by large reductions in the bandgap of ZnSe and ZnTe, spanning the entire visible spectrum.
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Research Article| June 14 2012
Strain-assisted bandgap modulation in Zn based II-VI semiconductors
S. K. Yadav;
S. K. Yadav, R. Ramprasad; Strain-assisted bandgap modulation in Zn based II-VI semiconductors. Appl. Phys. Lett. 11 June 2012; 100 (24): 241903. https://doi.org/10.1063/1.4729153
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