An extraordinary magnetoresistance (EMR) device with a 3-contact geometry has been fabricated and characterized. A large enhancement of the output sensitivity at low magnetic fields compared to the conventional EMR device has been found, which can be attributed to an additional influence coming from the Hall effect. Output sensitivities of 0.19 mV/T at zero-field and 0.2 mV/T at 0.01 T have been measured in the device, which is equivalent to the ones of the conventional EMR sensors with a bias of ∼0.04 T. The exceptional performance of EMR sensors in the high field region is maintained in the 3-contact device.
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Research Article| June 06 2012
Hall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor
Jian Sun, Jürgen Kosel; Hall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor. Appl. Phys. Lett. 4 June 2012; 100 (23): 232407. https://doi.org/10.1063/1.4726431
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