We report the fabrication and characterization of 80GeS2·20Ga2S3:0.5Tm2S3 chalcogenide glass-ceramics. A careful thermal process has led to the formation of ∼50 nm Ga2S3 nanocrystals. By monitoring the 3H5→3F4 Tm3+ transition, an almost fivefold increase of in the intensity and ∼76 μs prolongation in the lifetime of mid-infrared fluorescence at 3.8 μm have been observed after crystallization. Element mapping evidenced that enhancement in the mid-infrared emission intensity was related to the formation of Ge-rich region in the glass-ceramics, consistent with spectroscopic results from glasses with different levels of GeS2 content and β-GeS2 precipitation.
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