Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin films

The effect of the laser fluence on high temperature thermoelectric properties of the La doped SrTiO₃ (SLTO) thin films epitaxially grown on LaAlO₃ 〈100〉 substrates by pulsed laser deposition is clarified. It is shown that oxygen vacancies that influence the effective mass of carriers in SLTO films can be tuned by varying the laser energy. The highest power factor of 0.433 W K⁻¹ m⁻¹ has been achieved at 636 K for a film deposited using the highest laser fluence of 7 J cm⁻² pulse⁻¹.