Tunnel field-effect-transistor (TFET) based biosensor is proposed, and it is shown that they can surpass by several orders, the performance of those based on conventional FET (CFET) and hence, can potentially revolutionize the biosensing applications. Analytical formula is derived for the sensitivity and response time to provide physical insights in terms of material bandgap and operation regime of the TFET biosensor for achieving optimal results. At the same time, rigorous numerical simulations have been performed in order to obtain accurate values of sensitivity for both biomolecule and pH sensing operations. The time dependent response of the biosensors has also been discussed through analytical and numerical solutions. It is shown that while the CFET biosensors suffer from fundamental limitations on the maximum sensitivity and minimum detection time achievable, TFET biosensors, with their fundamentally different current injection mechanism in the form of band-to-band tunneling, can overcome such limitations and lead to over four orders of magnitude higher sensitivity and over an order of magnitude lower response time.
Skip Nav Destination
Article navigation
2 April 2012
Research Article|
April 05 2012
Proposal for tunnel-field-effect-transistor as ultra-sensitive and label-free biosensors
Deblina Sarkar;
Deblina Sarkar
a)
Department of Electrical and Computer Engineering,
University of California
, Santa Barbara, California 93106, USA
Search for other works by this author on:
Kaustav Banerjee
Kaustav Banerjee
a)
Department of Electrical and Computer Engineering,
University of California
, Santa Barbara, California 93106, USA
Search for other works by this author on:
a)
Authors to whom correspondence should be addressed. Electronic mail: deblina@ece.ucsb.edu and kaustav@ece.ucsb.edu.
Appl. Phys. Lett. 100, 143108 (2012)
Article history
Received:
February 14 2012
Accepted:
March 06 2012
Citation
Deblina Sarkar, Kaustav Banerjee; Proposal for tunnel-field-effect-transistor as ultra-sensitive and label-free biosensors. Appl. Phys. Lett. 2 April 2012; 100 (14): 143108. https://doi.org/10.1063/1.3698093
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00