A p-type InGaN hole reservoir layer (HRL) was designed and incorporated in GaN based light-emitting diodes (LEDs) to enhance hole injection efficiency and alleviate efficiency droop. The fabricated LEDs with p-type HRL exhibited higher light output power, smaller emission energy shift and broadening as compared to its counterpart. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the alleviated band bending in the last couple of quantum well and electron blocking layer, and thus better hole injection efficiency. Meanwhile, the efficiency droop can be effectively mitigated when the p-InGaN HRL was used.
Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer
Taiping Lu, Shuti Li, Chao Liu, Kang Zhang, Yiqin Xu, Jinhui Tong, Lejuan Wu, Hailong Wang, Xiaodong Yang, Yian Yin, Guowei Xiao, Yugang Zhou; Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer. Appl. Phys. Lett. 2 April 2012; 100 (14): 141106. https://doi.org/10.1063/1.3700722
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