We investigate some properties of an atom chip made of a gold microcircuit deposited on a transparent silicon carbide substrate. A favorable thermal behavior is observed in the presence of electrical current, twice as good as a silicon counterpart. We obtain one hundred million rubidium atoms in a magneto-optical trap with several of the beams passing through the chip. We point out the importance of coating of the chip against reflection to avoid a temperature-dependent Fabry-Perot effect. We finally discuss detection through the chip, potentially granting large numerical apertures, as well as some other potential applications.
REFERENCES
1.
J.
Reichel
, W.
Hänsel
, and T. W.
Hänsch
, Phys. Rev. Lett.
83
, 3398
(1999
).2.
R.
Folman
, P.
Krüger
, D.
Cassettari
, B.
Hessmo
, T.
Maier
, and J.
Schmiedmayer
, Phys. Rev. Lett.
84
, 4749
(2000
).3.
J.
Fortágh
, and C.
Zimmermann
, Rev. Mod. Phys.
79
, 235
(2007
).4.
J.
Reichel
and V.
Vuletić
, Atom Chips
(John Wiley & Sons
, Weinheim, Germany, 2011
).5.
T.
Schumm
, S.
Hofferberth
, L.
Andersson
, S.
Wildermuth
, S.
Groth
, I.
Bar-Joseph
, J.
Schmiedmayer
, and P.
Krüger
, Nat. Phys.
1
, 57
(2005
).6.
P.
Böhi
, M.
Riedel
, J.
Hoffrogge
, J.
Reichel
, T.
Hänsch
, and P.
Treutlein
, Nat. Phys.
5
, 592
(2009
).7.
C.
Deutsch
, F.
Ramirez-Martinez
, C.
Lacroûte
, F.
Reinhard
, T.
Schneider
, J. N.
Fuchs
, F.
Piéchon
, F.
Laloë
, J.
Reichel
, and P.
Rosenbusch
, Phys. Rev. Lett.
105
, 020401
(2010
).8.
T.
Calarco
, E. A.
Hinds
, D.
Jaksch
, J.
Schmiedmayer
, J. I.
Cirac
, and P.
Zoller
, Phys. Rev. A
61
, 022304
(2000
).9.
P.
Treutlein
, T. W.
Hänsch
, J.
Reichel
, A.
Negretti
, M. A.
Cirone
, and T.
Calarco
, Phys. Rev. A
74
, 022312
(2006
).10.
P.
Rosenbusch
, Appl. Phys. B: Lasers Opt.
95
, 227
(2009
).11.
A.
Zatezalo
, V.
Vuletić
, P.
Baker
, and T.
Poling
, in Position, Location and Navigation Symposium, 2008 IEEE/ION
, 5-8 May 2008 (IEEE
, New York, NY, 2008
), pp. 940
–950
.12.
J.
Armijo
, C. L.
Garrido Alzar
, and I.
Bouchoule
, Eur. Phys. J. D
56
, 33
(2010
).13.
S.
Groth
, P.
Krüger
, S.
Wildermuth
, R.
Folman
, T.
Fernholz
, J.
Schmiedmayer
, D.
Mahalu
, and I.
Bar-Joseph
, Appl. Phys. Lett.
85
, 2980
(2004
).14.
CREE
, Silicon Carbide Substrates and Epitaxy Product Specification
(CREE
, Durham, NC, 2011).15.
D. M.
Farkas
, K. M.
Hudek
, E. A.
Salim
, S. R.
Segal
, M. B.
Squires
, and D. Z.
Anderson
, Appl. Phys. Lett.
96
, 093102
(2010
).16.
S.
Dakshinamurthy
, N.
Quick
, and A.
Kar
, J. Phys. D: Appl. Phys.
40
, 353
(2007
).17.
S.
Saddow
and A.
Agarwal
, Advances in Silicon Carbide Processing and Applications
(Artech House
, Boston, MA, 2004
).18.
P.
Shaffer
, Appl. Opt.
10
, 1034
(1971
).19.
N.
Vansteenkiste
, P.
Vignolo
, and A.
Aspect
, J. Opt. Soc. Am. A
10
, 2240
(1993
).20.
H.
Lewandowski
, D.
Harber
, D.
Whitaker
, and E.
Cornell
, J. Low Temp. Phys.
132
, 309
(2003
).21.
Q.
Bodart
, S.
Merlet
, N.
Malossi
, F. P. D.
Santos
, P.
Bouyer
, and A.
Landragin
, Appl. Phys. Lett.
96
, 134101
(2010
).22.
P.
Cladé
, S.
Guellati-Khélifa
, C.
Schwob
, F.
Nez
, L.
Julien
, and F.
Biraben
, Europhys. Lett.
71
, 730
(2005
).23.
H.
Lee
, D.
Kim
, Y.
Sung
, and G.
Yeom
, Solid Films
475
, 318
(2005
).© 2012 American Institute of Physics.
2012
American Institute of Physics
You do not currently have access to this content.