At room temperature, AlGaInP pn-junction light-emitting diodes (LEDs) emitting at 630 nm do not exhibit an efficiency droop. However, upon cooling the AlGaInP LEDs to cryogenic temperatures, they show a pronounced efficiency droop. We attribute the efficiency droop in AlGaInP LEDs to electron-drift-induced reduction in injection efficiency (i.e., carrier leakage out of the active region) mediated by the asymmetry of the pn junction, specifically the disparity between electron and hole concentrations and mobilities, with the concentration disparity exacerbated at low temperatures.
REFERENCES
1.
J.
Piprek
, Phys. Status Solidi A
207
, 2217
(2010
).2.
J.-I.
Shim
, H.
Kim
, D.-S.
Shin
, and H.-Y.
Ryu
, J. Korean Phys. Soc.
58
, 503
(2011
).3.
D. S.
Meyaard
, Q.
Shan
, Q.
Dai
, J.
Cho
, E. F.
Schubert
, M.-H.
Kim
, and C.
Sone
, Appl. Phys. Lett.
99
, 041112
(2011
).4.
D. S.
Meyaard
, G.-B.
Lin
, Q.
Shan
, J.
Cho
, E. F.
Schubert
, H.
Shim
, M.-H.
Kim
, and C.
Sone
, Appl. Phys. Lett.
99
, 251115
(2011
).5.
I. V.
Rozhansky
and D. A.
Zakheim
, Semiconductors
40
, 839
(2006
).6.
M.-H.
Kim
, M. F.
Schubert
, Q.
Dai
, J. K.
Kim
, E. F.
Schubert
, J.
Piprek
, and Y.
Park
, Appl. Phys. Lett.
91
, 183507
(2007
).7.
J.
Xu
, M. F.
Schubert
, A. N.
Noemaun
, D.
Zhu
, J. K.
Kim
, E. F.
Schubert
, M. H.
Kim
, H. J.
Chung
, S.
Yoon
, C.
Sone
et al., Appl. Phys. Lett.
94
, 011113
(2009
).8.
T.
Mukai
, M.
Yamada
, and S.
Nakamura
, Jpn. J. Appl. Phys.
38
, 3976
(1999
).9.
Y.
Yang
, X. A.
Cao
, and C.
Yan
, IEEE Trans. Electron Devices
55
, 1771
(2008
).10.
K. T.
Delaney
, P.
Rinke
, and C. G.
Van de Walle
, Appl. Phys. Lett.
94
, 191109
(2009
).11.
Y. C.
Shen
, G. O.
Mueller
, S.
Watanabe
, N. F.
Gardner
, A.
Munkholm
, and M. R.
Krames
, Appl. Phys. Lett.
91
, 141101
(2007
).12.
E. F.
Schubert
, Light-Emitting Diodes
, 2nd ed. (Cambridge University Press
, Cambridge
, 2006
).13.
N. I.
Bochkareva
, V. V.
Voronenkov
, R. I.
Gorbunov
, A. S.
Zubrilov
, Y. S.
Lelikov
, P. E.
Latyshev
, Y. T.
Rebane
, A. I.
Tsyuk
, and Y. G.
Shreter
, Appl. Phys. Lett.
96
, 133502
(2010
).14.
J.
Wang
, L.
Wang
, W.
Zhao
, Z.
Hao
, and Y.
Luo
, Appl. Phys. Lett.
97
, 201112
(2010
).15.
S. M.
Sze
and K. K.
Ng
, Physics of Semiconductor Devices
, 3rd ed. (Wiley
, Hoboken
, 2007
).16.
D. P.
Bour
, D. W.
Treat
, R. L.
Thornton
, R. S.
Geels
, and D. F.
Welch
, IEEE J. Quantum Electron.
29
, 1337
(1993
).17.
S. A.
Wood
, C. H.
Molloy
, P. M.
Smowton
, P.
Blood
, D. J.
Somerford
, and C. C.
Button
, Appl. Phys. Lett.
75
, 1748
(1999
).18.
S. A.
Wood
, C. H.
Molloy
, P. M.
Smowton
, P.
Blood
, and C. C.
Button
, IEEE J. Quantum Electron.
36
, 742
(2000
).© 2012 American Institute of Physics.
2012
American Institute of Physics
You do not currently have access to this content.
