This paper explores transport in transparent thin film transistors formed using a liquid precursor to indium zinc oxide, delivered to target substrates by electrohydrodynamic jet (e-jet) printing. Under optimized conditions, we observe field effect mobilities as high as 32 cm2V−1s−1, with on/off current ratios of 103 and threshold voltages of 2 V. These results provide evidence that material manipulated in fine-jet, electric field induced liquid flows can yield semiconductor devices without any adverse effects of residual charge or unintentional doping. E-jet printing methods provide levels of resolution (∼1.5 μm) that provide a path to printed transistors with small critical dimensions.
REFERENCES
1.
K.
Nomura
, H.
Ohta
, A.
Takagi
, T.
Kamiya
, M.
Hirano
, and H.
Hosono
, Nature
432
(7016
), 488
(2004
).2.
Y.
Sun
and J. A.
Rogers
, Adv. Mater.
19
(15
), 1897
(2007
).3.
H. Q.
Chiang
, J. F.
Wager
, R. L.
Hoffman
, J.
Jeong
, and D. A.
Keszler
, Appl. Phys. Lett.
86
(1
), 013503
(2005
).4.
K. K.
Banger
, Y.
Yamashita
, K.
Mori
, R. L.
Peterson
, T.
Leedham
, J.
Rickard
, and H.
Sirringhaus
, Nature Mater.
10
(1
), 45
(2011
).5.
K.
Nomura
, A.
Takagi
, T.
Kamiya
, H.
Ohta
, M.
Hirano
, and H.
Hosono
, Jpn. J. Appl. Phys.
45
(5 B
), 4303
(2006
).6.
S.
Jeong
, Y. G.
Ha
, J.
Moon
, A.
Facchetti
, and T. J.
Marks
, Adv. Mater.
22
(12
), 1346
(2010
).7.
H.
Hosono
, J. Non-Cryst. Solids
352
(9–20
), 851
(2006
).8.
D. H.
Lee
, Y. J.
Chang
, G. S.
Herman
, and C. H.
Chang
, Adv. Mater.
19
(6
), 843
(2007
).9.
H. S.
Kim
, P. D.
Byrne
, A.
Facchetti
, and T. J.
Marks
, J. Am. Chem. Soc.
130
(38
), 12580
(2008
).10.
S. T.
Meyers
, J. T.
Anderson
, C. M.
Hung
, J.
Thompson
, J. F.
Wager
, and D. A.
Keszler
, J. Am. Chem. Soc.
130
(51
), 17603
(2008
).11.
M. G.
Kim
, M. G.
Kanatzidis
, A.
Facchetti
, and T. J.
Marks
, Nature Mater.
10
(5
), 382
(2011
).12.
T.
Shimoda
, Y.
Matsuki
, M.
Furusawa
, T.
Aoki
, I.
Yudasaka
, H.
Tanaka
, H.
Iwasawa
, D.
Wang
, M.
Miyasaka
, and Y.
Takeuchi
, Nature
440
(7085
), 783
(2006
).13.
H.
Sirringhaus
, T.
Kawase
, R. H.
Friend
, T.
Shimoda
, M.
Inbasekaran
, W.
Wu
, and E. P.
Woo
, Science
290
(5499
), 2123
(2000
).14.
J. U.
Park
, M.
Hardy
, S. J.
Kang
, K.
Barton
, K.
Adair
, D. K.
Mukhopadhyay
, C. Y.
Lee
, M. S.
Strano
, A. G.
Alleyne
, J. G.
Georgiadis
, P. M.
Ferreira
, and J. A.
Rogers
, Nature Mater.
6
(10
), 782
(2007
).15.
J. U.
Park
, J. H.
Lee
, U.
Paik
, Y.
Lu
, and J. A.
Rogers
, Nano Lett.
8
(12
), 4210
(2008
).16.
J. U.
Park
, S.
Lee
, S.
Unarunotai
, Y.
Sun
, S.
Dunham
, T.
Song
, P. M.
Ferreira
, A. G.
Alleyene
, U.
Paik
, and J. A.
Rogers
, Nano Lett.
10
(2
), 584
(2010
).17.
S.
Mishra
, K. L.
Barton
, A. G.
Alleyne
, P. M.
Ferreira
, and J. A.
Rogers
, J. Micromech. Microeng.
20
(9
), 095026
(2010
).18.
K.
Kaisei
, N.
Satoh
, K.
Kobayashi
, K.
Matsushige
, and H.
Yamada
, Nanotechnology
22
(17
), 175301
(2011
).19.
T.
Sekitani
, Y.
Noguchi
, U.
Zschieschang
, H.
Klauk
, and T.
Someya
, Proc. Natl. Acad. Sci. U.S.A.
105
(13
), 4976
(2008
).20.
See supplementary material at http://dx.doi.org/10.1063/1.3691177 for crystallographic information of the annealed IZO films.
© 2012 American Institute of Physics.
2012
American Institute of Physics
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