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Volume 1, Issue 1
March 2025
APL Electronic Devices Cover Image for Volume 1, Issue 1
All Issues
EISSN 2995-8423
In this Issue

EDITORIALS

Welcome to the first issue of APL Electronic Devices!
Sohini Kar-Narayan
APL Electronic Devices 1, 010401 (2025) https://doi.org/10.1063/5.0267676
View articletitled, Welcome to the first issue of <em>APL Electronic Devices</em>!
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REVIEWS

Recent advances in nanogenerators for wearable electronic devices
Daniel Manaye Tiruneh; Hanjun Ryu
APL Electronic Devices 1, 011501 (2025) https://doi.org/10.1063/5.0252915
View articletitled, Recent advances in nanogenerators for wearable electronic devices
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ARTICLES

Sustainable polymer materials for triboelectric and hybrid energy harvesting Featured
T. Rodrigues-Marinho; R. Brito-Pereira; G. Pace; C. R. Tubio; S. Lanceros-Méndez; P. Costa
APL Electronic Devices 1, 016101 (2025) https://doi.org/10.1063/5.0242816
View articletitled, Sustainable polymer materials for triboelectric and hybrid energy harvesting
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Incomplete donor ionization based 2D-charge density and drain current model for δ-doped β-(AlxGa1−x)2O3/Ga2O3 HFET
Akash Patnaik; Pankaj Sharma
APL Electronic Devices 1, 016102 (2025) https://doi.org/10.1063/5.0243779
View articletitled, Incomplete donor ionization based 2D-charge density and drain current model for δ-doped <em>β</em>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> HFET
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High temperature operation and failure of Ga2O3 Schottky barrier diodes: An in situ TEM study Editor’s Pick
Nahid Sultan Al-Mamun; Jian-Sian Li; Aman Haque; Douglas E. Wolfe; Fan Ren; Stephen Pearton
APL Electronic Devices 1, 016103 (2025) https://doi.org/10.1063/5.0250729
View articletitled, High temperature operation and failure of Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes: An <em>in situ</em> TEM study
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Impact of magnetic ion substitution on the crystal structure of multiferroic Aurivillius phases
Jennifer Halpin; Michael Schmidt; Roger W. Whatmore; Lynette Keeney
APL Electronic Devices 1, 016104 (2025) https://doi.org/10.1063/5.0246803
View articletitled, Impact of magnetic ion substitution on the crystal structure of multiferroic Aurivillius phases
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Microstructures and photovoltaic effect of Ba/Fe modified Bi0.5Na0.5TiO3 ferroelectric ceramics
Mingqiang Zhong; Weixing Dou; Xiao Liu; Baohua Zhu; Liufang Meng; Changlai Yuan; Rusen Yang
APL Electronic Devices 1, 016105 (2025) https://doi.org/10.1063/5.0252878
View articletitled, Microstructures and photovoltaic effect of Ba/Fe modified Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub> ferroelectric ceramics
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Impact of quantum confinement on source-to-drain tunneling and sub-threshold behavior of ultra-thin-body MOSFETs at cryogenic temperatures
Nalin Vilochan Mishra; Aditya Sankar Medury
APL Electronic Devices 1, 016106 (2025) https://doi.org/10.1063/5.0241873
View articletitled, Impact of quantum confinement on source-to-drain tunneling and sub-threshold behavior of ultra-thin-body MOSFETs at cryogenic temperatures
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Wide range work function modulation of TiN for complementary field effect transistor: A first-principles study
Miaojia Yuan; Maokun Wu; Yichen Wen; Xuepei Wang; Boyao Cui; Jinhao Liu; Yishan Wu; Hong Dong; Feng Lu; Wei-Hua Wang; Pengpeng Ren; Sheng Ye; Hongliang Lu; Runsheng Wang; Zhigang Ji; Ru Huang
APL Electronic Devices 1, 016107 (2025) https://doi.org/10.1063/5.0252186
View articletitled, Wide range work function modulation of TiN for complementary field effect transistor: A first-principles study
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Plasma-etch-free β-Ga2O3–NiO–PtOx merged PiN Schottky diode with high-voltage stress reliability
Joseph A. Spencer; Yuan Qin; Alan G. Jacobs; Boyan Wang; Neeraj Nepal; Hannah N. Masten; Matthew Porter; Bixuan Wang; Geoffrey M. Foster; Akito Kuramata; Karl D. Hobart; Travis J. Anderson; Yuhao Zhang; Marko J. Tadjer
APL Electronic Devices 1, 016108 (2025) https://doi.org/10.1063/5.0238709
View articletitled, Plasma-etch-free <em>β</em>-Ga<sub>2</sub>O<sub>3</sub>–NiO–PtO<sub><em>x</em></sub> merged PiN Schottky diode with high-voltage stress reliability
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CHORUS
High breakdown voltage quasi-vertical PN diode with optimized multiple junction termination extensions
Jingyang Zhang; Wei Huang; Wai Lun Au Yeung; Yinan Zhang; Wenhao Zhang; D. W. Zhang; Zhaojun Liu
APL Electronic Devices 1, 016109 (2025) https://doi.org/10.1063/5.0246786
View articletitled, High breakdown voltage quasi-vertical PN diode with optimized multiple junction termination extensions
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High power piezoelectric energy harvester for a temperature monitoring system
Veronika Kovacova; Nagamalleswara Rao Alluri; Olivier Bouton; Jérôme Polesel; Torsten Granzow; Vincent Frick; Liana Wassouf; Costel Sorin Cojocaru; Gilles Feugnet; Paolo Bondavalli; Emmanuel Defay
APL Electronic Devices 1, 016110 (2025) https://doi.org/10.1063/5.0253362
View articletitled, High power piezoelectric energy harvester for a temperature monitoring system
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Zero-dipole Schottky contact: Homologous metal contact to 2D semiconductor
Che Chen Tho; Shibo Fang; Yee Sin Ang
APL Electronic Devices 1, 016111 (2025) https://doi.org/10.1063/5.0256335
View articletitled, Zero-dipole Schottky contact: Homologous metal contact to 2D semiconductor
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Ultra-high permittivity BaTiO3 (ε = 230) on Al2O3/AlGaN/GaN MISHEMTs for field-management in high-voltage RF applications Featured
Kyle J. Liddy; Weisong Wang; Stefan Nikodemski; Chris Chae; Kevin D. Leedy; Jean-Pierre Bega; Nolan S. Hendricks; Elizabeth A. Sowers; Ahmad E. Islam; Jinwoo Hwang; Siddharth Rajan; Andrew J. Green
APL Electronic Devices 1, 016112 (2025) https://doi.org/10.1063/5.0250731
View articletitled, Ultra-high permittivity BaTiO<sub>3</sub> (<em>ε</em> = 230) on Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MISHEMTs for field-management in high-voltage RF applications
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Ultralow subthreshold swing of 9 mV/dec for planar bulk GaAs MOSFETs at 4 K in quantum computing applications
L. B. Young; Y. H. G. Lin; H. W. Wan; J. Liu; Y. T. Cheng; B. Y. Chen; K. M. Chen; H. W. Chang; M. J. Wang; J. Kwo; M. Hong
APL Electronic Devices 1, 016113 (2025) https://doi.org/10.1063/5.0244788
View articletitled, Ultralow subthreshold swing of 9 mV/dec for planar bulk GaAs MOSFETs at 4 K in quantum computing applications
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Road bump triboelectric generator excited by a small number of actuations for powering Bluetooth communications
Ahmad Delbani; Dimitri Galayko; Malal Kane; Philippe Basset
APL Electronic Devices 1, 016114 (2025) https://doi.org/10.1063/5.0244986
View articletitled, Road bump triboelectric generator excited by a small number of actuations for powering Bluetooth communications
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Ultrawide bandgap LiGa5O8/β-Ga2O3 heterojunction p–n diodes
Vijay Gopal Thirupakuzi Vangipuram; Kaitian Zhang; Dong Su Yu; Lingyu Meng; Christopher Chae; Yibo Xu; Jinwoo Hwang; Wu Lu; Hongping Zhao
APL Electronic Devices 1, 016115 (2025) https://doi.org/10.1063/5.0255443
View articletitled, Ultrawide bandgap LiGa<sub>5</sub>O<sub>8</sub>/β-Ga<sub>2</sub>O<sub>3</sub> heterojunction p–n diodes
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