[Fe/Fe4N]N multilayers with high saturation magnetization were prepared on MgO(200) substrate, by the DC reactive magnetron sputtering and then annealed at higher temperature. Their structural and magnetic properties were investigated. Epitaxial growth of α-Fe and γ’-Fe4N were demonstrated on MgO, and then excellent [Fe/Fe4N]N was obtained. Though the saturation magnetizations of the as-deposited [Fe/Fe4N]N are slightly below the average value of those of α-Fe and γ’-Fe4N, the saturation magnetization of the annealed [Fe(3.04 nm)/Fe4N(3.04 nm)]5 increases up to 1850 emu/cc, 32 % larger than that of α-Fe film. N atom diffusion from the γ’-Fe4N to the α-Fe layer at high temperature greatly improves the saturation magnetization.

Magnetic materials with giant saturation magnetization have attracted many of researchers and condensed matter physicists for decades. As described by the famous Slater-Pauling curve, the material with the highest saturation magnetization Ms is Fe65Co35 alloy (Ms ∼1950 emu/cc). However, this was challenged in 1972 by an announcement of the giant magnetism of α”-Fe16N2 with its Ms about 18% higher than that of Fe65Co35, in the compound of polycrystalline films.1 α”-Fe16N2 which was first reported by Jack in 1951, is an ordered nitrogen martensite obtained by quenching the austenite.2 In 1989, epitaxially grown Fe-N films demonstrated that the saturation magnetization of Fe16N2 is in the range of 2230-2290 emu/cc.3 After that, three kinds of Fe-N materials were investigated: foil, powder and films. However, many controversial results on the saturation magnetization for the α”-Fe16N2 phase have been reported, which range from 1750 emu/cc to 2290 emu/cc.4–9 The theoretical study does not support the giant magnetic moment of iron atoms.10 Therefore, this material has been considered as one of the most mysterious ones in the magnetic community.

In 2010, a new model of partial localized electron states was proposed to explain the giant saturation magnetization of α”-Fe16N2, whose Ms is 2130 emu/cc.11,12 The group of Japanese also synthesized the single-phaseα”-Fe16N2 nanoparticles, which exhibit a saturation magnetization (Ms) of 234 emu/g at 5K and a magnetocrystalline anisotropy constant (Ku) of 9.6*10−6 erg/cc.13 The results again attracted the researcher’s attention and showed a new path for a possible candidate of the rare-earth-free permanent magnet material with a high Ms, which is very important for a green energy society. Besides, α-Fe(N) with interstitial N atoms in the Fe lattice, has high saturation magnetization similar to that of FeCo.14 Moreover, Fe-N is a potential material in spintronics.15 

The lattice of α”-Fe16N2 is a body centered tetragonal structure where N atoms alternatively occupy the octahedral sites, and its lattice can be thought of as consisting of the alternatively arranged γ-Fe and γ’-Fe4N cells.2 Though γ-Fe is not stable at room temperature, α-Fe, the stable body-centered-cubic, can be regarded as a face-centered-cubic with the compressed c axis. In this paper, [Fe/Fe4N]N multilayers were designed to approach the α”-Fe16N2 structure, and their magnetic properties were studied. After annealing treatments, high saturation magnetic induction of 1850 emu/cc was obtained in the Fe-N multilayers.

The Fe-N thin films were grown on MgO (200) single-crystal substrates. Besides Ar, N2 with different flow ratios to Ar was introduced in the chamber and then Fe-N films were obtained by the DC reactive magnetron sputtering. Pure iron (99.99%) was used as the sputtering target. The base pressure in the deposition chamber was lower than 4*10−8Torr, and the substrate temperature was 350 oC. The recipe of [Fe/Fe4N]N multilayers is described as follows. An α-Fe layer was deposited first on the MgO substrate. After the shutter closed, N2 was introduced in the chamber for 30 seconds and then γ’-Fe4N was prepared by the reactive sputtering with the N2 flow ratio of 20%, which was identified as the ratio of N2 flow to Ar flow. After the deposition of Fe4N, the shutter closed again and the N2 inlet was turned off for 70 seconds before Fe deposition. Since the lattice constant of Fe4N is 0.385 nm, the thickness of the individual Fe4N layers were set at 0.76 nm, 1.52 nm, 2.28 nm and 3.04 nm, respectively. The Fe layers were of the same thicknesses as the corresponding Fe4N layers. The recipe was repeated different times for different Fe and Fe4N thickness, and then the thickness of the multilayers was kept at 30 nm. Finally, a 3-nm-thick Pt layer was capped on the multilayers. For directly comparing the saturation magnetization, all the samples were prepared using the same recipe. That is, the shutter was opened and closed even in the preparation of Fe and Fe4N films. Finally, samples were annealed at different temperatures, from 350 oC to 500 oC in a 4*10−8Torr vacuum for 60 min, in order to adjust the position of the nitrogen atoms.

The structure of the samples was examined by x-ray diffraction (XRD) with Cu Kα radiation. The film thickness was determined by the sputtering rate, which is calibrated by using a surface profiler. The magnetic properties were measured by a vibrating sample magnetometer (VSM) with a resolution of 5*10−6 emu at room temperature. The M–H loops were measured with the applied field parallel to the film plane.

Figure 1 shows X-ray θ-2θ scans for 30 nm Fe-N films at different N2 flow ratios of 5 %, 10 %, 15 % and 20 % at 350 oC. Phase transformation from α-Fe to γ’-Fe4N is clearly seen. For the Fe-N film prepared at the N2 flow ratio of 5 %, there is only a strong Fe (200) peak at 65o, but no Fe (110) peak at 44.7o which is its preferred orientation. This indicates the epitaxial growth of the Fe film on MgO, since the diagonal of the Fe lattice is 0.405 nm which is similar to the MgO lattice of 0.42 nm. With the increase of the N2 flow ratio, the Fe peak becomes weak, but the γ’-Fe4N (200) peak appears and turns strong. When the N2 flow ratio reaches 20 %, only Fe4N peak is observed. The absence of (111) peak implies the epitaxial growth of γ’-Fe4N.

FIG. 1.

X-ray θ-2θ scans for 30nm Fe-N films at different N2 flow ratios of (a) 5 %, (b) 10 %, (c)15 % and (d) 20 %, with the substrate temperature of 350 oC.

FIG. 1.

X-ray θ-2θ scans for 30nm Fe-N films at different N2 flow ratios of (a) 5 %, (b) 10 %, (c)15 % and (d) 20 %, with the substrate temperature of 350 oC.

Close modal

Figure 2 shows the angular dependent magnetic properties of the γ’-Fe4N film which was prepared at the N2 flow ratio of 20 %. The switching field increases with the angle between the applied field and the in-plane direction, following 1/cosθ law of the magnetization reversal of the domain wall motion. Single crystal films were obtained. The saturation magnetization of Fe4N is 890 emu/cc, and that of the Fe film is 1400 emu/cc. The Ms of iron film was slightly smaller than other groups’ results.16,17 This might be due to the inaccurate control of film thickness by the shutter opening and closing. The dependence of saturation magnetization on the N2 flow ratio is consistent with the transformation of the Fe phase to the Fe4N phase as shown in the Figure 1.18 

FIG. 2.

The dependence of the magnetic properties of the Fe4N film on the angle between the applied field and the substrate plane. The film was prepared at the N2 flow ratio of 20 %. Here, IP represents the direction in the plane, and OP represents the normal direction. The inset is the angle dependent switching field.

FIG. 2.

The dependence of the magnetic properties of the Fe4N film on the angle between the applied field and the substrate plane. The film was prepared at the N2 flow ratio of 20 %. Here, IP represents the direction in the plane, and OP represents the normal direction. The inset is the angle dependent switching field.

Close modal

By using α-Fe and γ’-Fe4N layers, [Fe/Fe4N]N multilayers were fabricated. The total thickness of the [Fe/Fe4N]N multilayers was 30 nm, and the thickness of the Fe and Fe4N layers were the same. Figure 3 shows X-ray θ-2θ scans for 30 nm Fe-N multilayers with the different periods N. Fe (200) peak appears in all the samples and its intensity becomes stronger with the increase of the period thickness. As shown in Fig. 3(d), there is no Fe4N peak in [Fe/Fe4N]20, where the Fe4N layer (0.76 nm) is very thin. Considering that the lattice constant of Fe4N is 0.385 nm, the layer is only two-lattice high. Hence the lattice structure is hard to form and/or to be detected. However, the Fe4N (200) peak appears when the thickness increases to 1.52 nm (Fig. 3(c)), about four-lattice height. With the further increase of the thickness, the Fe4N (200) peak becomes stronger and stronger (Fig. 3(b) and 3(a)). Epitaxial growth between Fe4N and Fe was demonstrated.

FIG. 3.

X-ray θ-2θ scans for 30 nm Fe-N multilayers with the different periods, (a) [Fe(3.04 nm)./Fe4N (3.04 nm)]5, (b) [Fe(2.28 nm)/Fe4N (2.28 nm)]7, (c) [Fe(1.52 nm)/Fe4N (1.52 nm)]10, (d) [Fe(0.76 nm)/Fe4N (0.76 nm)]20.

FIG. 3.

X-ray θ-2θ scans for 30 nm Fe-N multilayers with the different periods, (a) [Fe(3.04 nm)./Fe4N (3.04 nm)]5, (b) [Fe(2.28 nm)/Fe4N (2.28 nm)]7, (c) [Fe(1.52 nm)/Fe4N (1.52 nm)]10, (d) [Fe(0.76 nm)/Fe4N (0.76 nm)]20.

Close modal

Fig. 4 shows the influence of the periodic number N of the multilayers on the saturation magnetization. Ms of all the samples was around 1100 emu/cc. Except that of the [Fe/Fe4N]10, however, the saturation magnetization of the other three samples were below the ideal value of 1150 emu/cc, the average one of Fe and Fe4N. The results imply the reactive sputtering process was not well controlled and then the partial Fe layer was nitridized. Moreover, interface roughness might be another reason, leading to N diffusion into the Fe layer.

FIG. 4.

The influence of the periodic number N on the multilayers on the saturation magnetization Ms.

FIG. 4.

The influence of the periodic number N on the multilayers on the saturation magnetization Ms.

Close modal

In order to adjust the position of the nitrogen atoms, the annealing treatments of different temperatures, from 350 oC to 500 oC, were carried on to the [Fe/Fe4N]N multilayers for 60 min. Figure 5 shows the XRD θ-2θ scans for the [Fe/Fe4N]5 after post-annealing at different temperatures. There is no change from the as-deposited multilayers in the scan after 400 oC annealing. Tiny migration of Fe (200) can be observed above the annealing temperature of 450 oC. Moreover, a slight doming is seen. The doming developed to a peak after 500 oC annealing. The peak, which is located at 63.3o, should not be iron oxide, since there is a 3-nm-thick Pt cover layer. It is reported that Fe4N cannot form at the substrate temperature of 400 oC though excellent epitaxial growth of Fe4N can be realized at the substrate temperature of 350 oC.19 That is, it is easy for the N atom to escape from the Fe4N lattice at a temperature higher than 400 oC.20 Therefore, the appearance of doming at 450 oC and the Fe4N peak at 500 oC should be due to the N atom diffusion from the Fe4N to the Fe layer. The diffusion is enhanced with the temperature increase. Moreover, N atoms tend to locate close to Fe4N side. This leads to an obvious deviation from the Fe (200) peak. The interstitial N atom leads to the expansion of the Fe lattice. According to the lattice expansion, the N content in the Fe lattice is about 2.4 at%.2 However, no peak of α”-Fe16N2 is found. This might be due to the small content of the phase. Since there is a transition layer between the Fe and the Fe4N layers, a gradual change of the lattice is expected. Fe16N2 could form in the transition region.

FIG. 5.

XRD θ-2θ scans for the [Fe/Fe4N]5 after post-annealing at different temperatures: (a) 350 oC, (b) 400 oC, (c) 450 oC, (d) 500 oC.

FIG. 5.

XRD θ-2θ scans for the [Fe/Fe4N]5 after post-annealing at different temperatures: (a) 350 oC, (b) 400 oC, (c) 450 oC, (d) 500 oC.

Close modal

Fig. 6 shows the magnetic hysteresis loops of the Fe film and the post-annealed [Fe/Fe4N]5 multilayer. The saturation magnetization of annealed [Fe/Fe4N]5 is 1850 emu/cc. As a comparison, the saturation magnetization of pure Fe is 1400 emu/cc (that of Fe4N is 890 emu/cc as showed in Fig. 3). Thus, the saturation magnetization of [Fe/Fe4N]5 above 500 oC annealing, increases by 32 % on the base of the saturation magnetization of iron. The inset shows the hysteresis loops of the as-deposited and post-annealed samples of [Fe/Fe4N]5. Above 500 oC annealing, saturation magnetization increases. It should be mentioned that 500 Oe is the maximal external magnetic field shown here, but the multilayers required the magnetic field of 15 kOe to be saturated. Therefore, the samples have not been fully magnetized at the applied field of 500 Oe. The Fe(N), when the N atoms are in the Fe lattice as the interstitial atom, has larger saturation magnetization than that of pure Fe.7,14 In the current experiment, the diffusion of the N atom into the Fe lattice from the Fe4N lattice could generate a similar effect, increasing the magnetization. Therefore, the result reveals a new approach to preparing high saturation magnetization Fe-N materials, by driving the nitrogen atom from the Fe4N lattice to the Fe lattice during high temperature annealing.

FIG. 6.

The magnetic hysteresis loops of the Fe film and the [Fe/Fe4N]5 multilayer. The inset is the hysteresis loops of the as-deposited and post-annealed [Fe/Fe4N]5, where the maximum field is 500 Oe.

FIG. 6.

The magnetic hysteresis loops of the Fe film and the [Fe/Fe4N]5 multilayer. The inset is the hysteresis loops of the as-deposited and post-annealed [Fe/Fe4N]5, where the maximum field is 500 Oe.

Close modal

[Fe/Fe4N]N multilayers with high magnetic moment have been fabricated by DC reactive magnetron sputtering. By introducing N2 flow into the sputtering chamber, high quality γ’-Fe4N film can be prepared. Then, [Fe/Fe4N]N multilayers are fabricated by alternative epitaxial growth of the Fe and the Fe4N layers. The saturation magnetization of the as-deposited [Fe/Fe4N]N is slightly below the average value of Fe and Fe4N. However, above 500 oC annealing saturation magnetization of [Fe/Fe4N]N increases to 1850 emu/cc, about 32 % higher than that of iron. This is due to the N atom which was diffused from the Fe4N to the Fe layer at 500 oC annealing. This is a new method to prepare high saturation magnetization Fe-N materials.

This work is supported by the NSF of China (Grant No.11174056).

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