Erratum: “Characterization of epitaxial titanium nitride mediated single-crystal nickel oxide grown on MgO-(100) and Si-(100)” [AIP Adv. 10, 065318 (2020)]

The calculated lattice constants of NiO, TiN, and Si of the NiO/TiN/Si sample¹ are corrected as follows: 4.209 Å for NiO, 4.237 Å for TiN, and 5.456 Å for Si. The lattice mismatches therefore are 0.66% for the NiO/TiN interface and 22.34% for the TiN/Si interface.

The second to last paragraph before the Conclusions section (pp. 10–11) should read as follows:

By the same calculation, the parallel lattice strain of NiO on TiN/Si is 0.0066, and that of TiN on Si is 0.2234. For NiO on TiN/Si, we have b = 2.976 Å, cos λ = 0.707, ν = $0.00660.0066+2×0.0142$ = 0.1886, cos β = 0, and f = $4.237−4.17694.237$ = 0.0142. The critical thickness of NiO on TiN/Si therefore is 39 Å.