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Front Matter for Volume 866

AIP Conf. Proc. 866, frontmatter (2006) https://doi.org/10.1063/v866.frontmatter

View articletitled, Front Matter for Volume 866

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Back Matter for Volume 866

AIP Conf. Proc. 866, backmatter (2006) https://doi.org/10.1063/v866.backmatter

View articletitled, Back Matter for Volume 866

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Using Multiple Implant Regions To Reduce Development Wafer Usage

S. R. Walther; S. Falk; S. Mehta; Y. Erokhin; P. Nunan

AIP Conf. Proc. 866, 409–412 (2006) https://doi.org/10.1063/1.2401543

Abstract

View articletitled, Using Multiple Implant Regions To Reduce Development Wafer Usage

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High performance medium current ion implanter system EXCEED3000AH‐G3

Shigeki Sakai; Masayasu Tanjyo; Nariaki Hamamoto; Sei Umisedo; Tomoaki Kobayashi; Takatoshi Yamashita; Takao Matsumoto; Tadashi Ikejiri; Kohei Tanaka; Yuji Koga; Satoru Yuasa; Masao Naito; Nobuo Nagai

AIP Conf. Proc. 866, 605–608 (2006) https://doi.org/10.1063/1.2401590

Abstract

View articletitled, High performance medium current ion implanter system EXCEED3000AH‐G3

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Advantages of Dual Magnet Ribbon Beam Architecture for Particle Control in Single Wafer High Current Implant

C. Campbell; G. Redinbo; J. Blake; P. Kellerman; E. Moore; N. Variam

AIP Conf. Proc. 866, 377–380 (2006) https://doi.org/10.1063/1.2401535

Abstract

View articletitled, Advantages of Dual Magnet Ribbon Beam Architecture for Particle Control in Single Wafer High Current Implant

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Reduction of the Wafer Pattern Damage on the Batch‐type High Current Ion Implanters

Emi Oga; Hisaki Izutani; Genshu Fuse; Michiro Sugitani

AIP Conf. Proc. 866, 457–459 (2006) https://doi.org/10.1063/1.2401555

Abstract

View articletitled, Reduction of the Wafer Pattern Damage on the Batch‐type High Current Ion Implanters

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Next Generation Medium Current Product: VIISta 900XP

A. Renau

AIP Conf. Proc. 866, 345–348 (2006) https://doi.org/10.1063/1.2401527

Abstract

View articletitled, Next Generation Medium Current Product: VIISta 900XP

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Detection and Reduction of the Yield Impact of Particle Induced Structure Defects at Batch Ion Implanters

Matthias Schmeide; Michael Kokot; Dirk‐Wito Franke; Bernd Sauter

AIP Conf. Proc. 866, 562–565 (2006) https://doi.org/10.1063/1.2401580

Abstract

View articletitled, Detection and Reduction of the Yield Impact of Particle Induced Structure Defects at Batch Ion Implanters

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New Medium Current Ion Implanter SOPHI‐200

Hidekazu Yokoo; Hideo Suzuki; Ryouta Fukui; Takeshi Hisamune; Makoto Tomita; Tsutomu Nishihashi; Kazuhiko Tonari; Seiji Ogata

AIP Conf. Proc. 866, 633–636 (2006) https://doi.org/10.1063/1.2401597

Abstract

View articletitled, New Medium Current Ion Implanter SOPHI‐200

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Photoelectric Measurement Method For Implanted Silicon: A Phenomenological Approach

K. Steeples; E. Tsidilkovski

AIP Conf. Proc. 866, 558–561 (2006) https://doi.org/10.1063/1.2401579

Abstract

View articletitled, Photoelectric Measurement Method For Implanted Silicon: A Phenomenological Approach

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The Role of Ion Beam Technology in the Development of Integrated Optical Monitors Suitable for Applications in Silicon Photonics

A. P. Knights; J. D. B. Bradley; P. J. Foster; S. H. Gou; P. E. Jessop

AIP Conf. Proc. 866, 9–12 (2006) https://doi.org/10.1063/1.2401449

Abstract

View articletitled, The Role of Ion Beam Technology in the Development of Integrated Optical Monitors Suitable for Applications in Silicon Photonics

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High Current Implant Precision Requirements for Sub‐65 nm Logic Devices

Yuri Erokhin; Terry Romig; Elshot Kim; JieJie Xu; Baonian Guo; Jinnig Liu; Kyu‐ha Shim; Peter Nunan

AIP Conf. Proc. 866, 520–523 (2006) https://doi.org/10.1063/1.2401570

Abstract

View articletitled, High Current Implant Precision Requirements for Sub‐65 nm Logic Devices

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P‐type Gate Electrode Formation Using B₁₈H₂₂ Ion Implantation

Dietmar Henke; Frank Jakubowski; Josef Deichler; Vincent C. Venezia; M. S. Ameen; M. A. Harris

AIP Conf. Proc. 866, 202–205 (2006) https://doi.org/10.1063/1.2401495

Abstract

View articletitled, P‐type Gate Electrode Formation Using B18H22 Ion Implantation

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Local resistance measurement on polycrystalline silicon layer in low‐temperature poly‐Si thin film transistor using scanning spreading resistance microscopy

S. Abo; H. Yamagiwa; K. Tanaka; F. Wakaya; T. Sakamoto; H. Tokioka; N. Nakagawa; M. Takai

AIP Conf. Proc. 866, 542–545 (2006) https://doi.org/10.1063/1.2401575

Abstract

View articletitled, Local resistance measurement on polycrystalline silicon layer in low‐temperature poly‐Si thin film transistor using scanning spreading resistance microscopy

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Phosphorus Implant For S/D Extension Formation: Diffusion And Activation Study After Spacer And Spike Anneal

S. H. Yeong; B. Colombeau; F. Benistant; M. P. Srinivasan; C. P. A. Mulcahy; P. S. Lee; L. Chan

AIP Conf. Proc. 866, 58–61 (2006) https://doi.org/10.1063/1.2401461

Abstract

View articletitled, Phosphorus Implant For S/D Extension Formation: Diffusion And Activation Study After Spacer And Spike Anneal

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Control of Phosphorus Transient Enhanced Diffusion using Co‐implantation

Aaron Vanderpool; Andre Budrevich; Mitch Taylor

AIP Conf. Proc. 866, 41–45 (2006) https://doi.org/10.1063/1.2401457

Abstract

View articletitled, Control of Phosphorus Transient Enhanced Diffusion using Co‐implantation

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Implant Angle Control on Optima MD

R. D. Rathmell; B. Vanderberg; A. M. Ray; D. E. Kamenitsa; M. Harris; K. Wu

AIP Conf. Proc. 866, 349–352 (2006) https://doi.org/10.1063/1.2401528

Abstract

View articletitled, Implant Angle Control on Optima MD

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Deep Trench Doping by Plasma Immersion Ion Implantation in Silicon

S. Nizou; V. Vervisch; H. Etienne; M. Ziti; F. Torregrosa; L. Roux; M. Roy; D. Alquier

AIP Conf. Proc. 866, 229–232 (2006) https://doi.org/10.1063/1.2401501

Abstract

View articletitled, Deep Trench Doping by Plasma Immersion Ion Implantation in Silicon

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Pre‐annealing effects of n⁺/p and p⁺/n junction formed by plasma doping (PLAD) and laser annealing

Sungho Heo; Sungkweon Baek; Dongkyu Lee; Musarrat Hasan; Hyunsang Hwang

AIP Conf. Proc. 866, 105–108 (2006) https://doi.org/10.1063/1.2401472

Abstract

View articletitled, Pre‐annealing effects of n+/p and p+/n junction formed by plasma doping (PLAD) and laser annealing

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Down to 2 nm Ultra Shallow Junctions : Fabrication by IBS Plasma Immersion Ion Implantation Prototype PULSION®

Frank Torregrosa; Hasnaa Etienne; Gilles Mathieu; Laurent Roux

AIP Conf. Proc. 866, 609–613 (2006) https://doi.org/10.1063/1.2401591

Abstract

View articletitled, Down to 2 nm Ultra Shallow Junctions : Fabrication by IBS Plasma Immersion Ion Implantation Prototype PULSION®

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Ion behaviour in pulsed plasma regime by means of Time‐resolved energy mass spectroscopy (TREMS) applied to an industrial radiofrequency Plasma Immersion Ion Implanter PULSION®

M. Carrere; F. Torregrosa; V. Kaeppelin

AIP Conf. Proc. 866, 257–260 (2006) https://doi.org/10.1063/1.2401508

Abstract

View articletitled, Ion behaviour in pulsed plasma regime by means of Time‐resolved energy mass spectroscopy (TREMS) applied to an industrial radiofrequency Plasma Immersion Ion Implanter PULSION®

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Plasma Immersion Ion Implantation applied to P+N junction solar cells

Vanessa Vervisch; D. Barakel; F. Torregrosa; L. Ottaviani; M. Pasquinelli

AIP Conf. Proc. 866, 253–256 (2006) https://doi.org/10.1063/1.2401507

Abstract

View articletitled, Plasma Immersion Ion Implantation applied to P+N junction solar cells

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High‐Speed Nano‐Processing with Cluster Ion Beams

T. Seki; J. Matsuo

AIP Conf. Proc. 866, 214–217 (2006) https://doi.org/10.1063/1.2401498

Abstract

View articletitled, High‐Speed Nano‐Processing with Cluster Ion Beams

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Germanium ion implantation to Improve Crystallinity during Solid Phase Epitaxy and the effect of AMU Contamination

K. S. Lee; D. H. Yoo; G. H. Son; C. H. Lee; J. H. Noh; J. J. Han; Y. S. Yu; Y. W. Hyung; J. K. Yang; D. G. Song; T. J. Lim; Y. K. Kim; S. C. Lee; H. D. Lee; J. T. Moon

AIP Conf. Proc. 866, 140–143 (2006) https://doi.org/10.1063/1.2401481

Abstract

View articletitled, Germanium ion implantation to Improve Crystallinity during Solid Phase Epitaxy and the effect of AMU Contamination

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Charging mechanism during ion implantation without charge compensation

Shigeki Sakai; Hung‐chi Fan; Emily Chen; Masayasu Tanjyo

AIP Conf. Proc. 866, 460–463 (2006) https://doi.org/10.1063/1.2401556

Abstract

View articletitled, Charging mechanism during ion implantation without charge compensation

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A Study of Carbon Effects in Implantation Process for Non‐Silicide Contact Formation

T. H. Huh; S. Kim; G. J. Ra; R. N. Reece; S. I. Kondratenko; Y. S. Kim; K. I. Shin; W. H. Jeon

AIP Conf. Proc. 866, 101–104 (2006) https://doi.org/10.1063/1.2401471

Abstract

View articletitled, A Study of Carbon Effects in Implantation Process for Non‐Silicide Contact Formation

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Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants

A. J. Smith; N. E. B. Cowern; B. Colombeau; R. Gwilliam; B. J. Sealy; E. J. H. Collart; S. Gennaro; D. Giubertoni; M. Bersani; M. Barozzi

AIP Conf. Proc. 866, 84–87 (2006) https://doi.org/10.1063/1.2401467

Abstract

View articletitled, Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants

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APC Implementation on VIISta Ion Implanters

Youn Ki Kim; Bret Adams; Nick Parisi; Sandeep Mehta; Jim Hamilton

AIP Conf. Proc. 866, 449–452 (2006) https://doi.org/10.1063/1.2401553

Abstract

View articletitled, APC Implementation on VIISta Ion Implanters

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Characterization of Parasitic Transistor Phenomenon in Nano‐scale NAND Flash Device by Blanket Tilt Implantation and Scanning Capacitance Microscopy

Dong‐Ho Lee; Seung‐Woo Shin; Choon‐Kun Ryu; Moon‐Keun Lee; Noh‐Yeal Kwak; Hyun‐Soo Shon; Byung‐Seok Lee; Sung‐Ki Park; Kae‐Dal Kwack

AIP Conf. Proc. 866, 550–553 (2006) https://doi.org/10.1063/1.2401577

Abstract

View articletitled, Characterization of Parasitic Transistor Phenomenon in Nano‐scale NAND Flash Device by Blanket Tilt Implantation and Scanning Capacitance Microscopy

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Germanium Nanoparticle Formation into Thin SiO₂ Films by Negative Ion Implantation and Their Electric Characteristics

Nobutoshi Arai; Hiroshi Tsuji; Naoyuki Gotoh; Tetsuya Okumine; Toshio Yanagitani; Masatomi Harada; Takeshi Satoh; Hitoshi Ohnishi; Takashi Minotani; Kouichirou Adachi; Hiroshi Kotaki; Toyotsugu Ishibashi; Yasuhito Gotoh; Junzo Ishikawa

AIP Conf. Proc. 866, 317–320 (2006) https://doi.org/10.1063/1.2401521

Abstract

View articletitled, Germanium Nanoparticle Formation into Thin SiO2 Films by Negative Ion Implantation and Their Electric Characteristics

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Simplifying the 45nm SDE Process with ClusterBoron® and ClusterCarbon™ Implantation

Wade Krull; Brian Haslam; Tom Horsky; Kurt Verheyden; Klaus Funk

AIP Conf. Proc. 866, 182–185 (2006) https://doi.org/10.1063/1.2401490

Abstract

View articletitled, Simplifying the 45nm SDE Process with ClusterBoron® and ClusterCarbon™ Implantation

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Profile and Angle Measurement System of SHX

Yuji Kikuchi; Mitsuaki Kabasawa; Mitsukuni Tsukihara; Michiro Sugitani

AIP Conf. Proc. 866, 393–396 (2006) https://doi.org/10.1063/1.2401539

Abstract

View articletitled, Profile and Angle Measurement System of SHX

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Implantation characteristics by boron cluster ion implantation

Tsutomu Nagayama; Nariaki Hamamoto; Sei Umisedo; Masayasu Tanjyo; Takayuki Aoyama

AIP Conf. Proc. 866, 186–189 (2006) https://doi.org/10.1063/1.2401491

Abstract

View articletitled, Implantation characteristics by boron cluster ion implantation

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PLAsma Doping For P+ Junction Formation In 90 nm NOR Flash Memory Technology

Dario Bigarella; Valter Soncini; Deven Raj; Vikram Singh; Steve Walther

AIP Conf. Proc. 866, 225–228 (2006) https://doi.org/10.1063/1.2401500

Abstract

View articletitled, PLAsma Doping For P+ Junction Formation In 90 nm NOR Flash Memory Technology

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Integration of Advanced Source and Drain Extension Process Using Carbon/Fluorine Co‐Implants and Spike Anneal in 65nm PMOS Devices

C. I. Li; H. Y. Wang; C. C. Chien; M. Chain; C. L. Yang; S. F. Tzou; H. Graoui; M. A. Foad; Richard Ting

AIP Conf. Proc. 866, 46–49 (2006) https://doi.org/10.1063/1.2401458

Abstract

View articletitled, Integration of Advanced Source and Drain Extension Process Using Carbon/Fluorine Co‐Implants and Spike Anneal in 65nm PMOS Devices

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Co‐Implantation for 45 nm PMOS and NMOS Source‐Drain Extension Formation: Device Characterisation Down to 30 nm Physical Gate Length

E. J. H. Collart; B. J. Pawlak; R. Duffy; E. Augendre; S. Severi; T. Janssens; P. Absil; W. Vandervorst; S. Felch; R. Scheutelkamp; N. E. B. Cowern

AIP Conf. Proc. 866, 37–40 (2006) https://doi.org/10.1063/1.2401456

Abstract

View articletitled, Co‐Implantation for 45 nm PMOS and NMOS Source‐Drain Extension Formation: Device Characterisation Down to 30 nm Physical Gate Length

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Ultrashallow P⁺/n junction formed by $B_{18} H_{22}^{+}$ Ion Implantation and Excimer Laser Annealing

Sungho Heo; Dongkyu Lee; H. T. Cho; W. A. Krull; Hyunsang Hwang

AIP Conf. Proc. 866, 171–173 (2006) https://doi.org/10.1063/1.2401487

Abstract

View articletitled, Ultrashallow P+/n junction formed by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">B</mi><mrow><mn>18</mn></mrow></msub><msubsup xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>22</mn></mrow><mrow><mi>+</mi></mrow></msubsup></math> Ion Implantation and Excimer Laser Annealing

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Non‐contact sheet resistance and leakage current monitoring of multi‐implant, ultra‐shallow junctions: Doping and damage effects for ms‐anneals

M. I. Current; V. N. Faifer; T. M. H. Wong; T. Nguyen; A. Koo

AIP Conf. Proc. 866, 582–585 (2006) https://doi.org/10.1063/1.2401585

Abstract

View articletitled, Non‐contact sheet resistance and leakage current monitoring of multi‐implant, ultra‐shallow junctions: Doping and damage effects for ms‐anneals

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Mapping Leakages Of USJ Test Wafers

James T. C. Chen; Tatiana Dimitrova; Dimitar Dimitrov

AIP Conf. Proc. 866, 574–577 (2006) https://doi.org/10.1063/1.2401583

Abstract

View articletitled, Mapping Leakages Of USJ Test Wafers

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Optima HD: Single Wafer Mechanical Scan Ion Implanter

P. Splinter; M. Graf; C. Godfrey; Y. Huang; D. Polner; J. Danis; K. Ota

AIP Conf. Proc. 866, 601–604 (2006) https://doi.org/10.1063/1.2401589

Abstract

View articletitled, Optima HD: Single Wafer Mechanical Scan Ion Implanter

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Metrology Requirements For Single Wafer Ion Implanters

Joseph C. Olson; Gordon Angel; Atul Gupta; Rosario Mollica; Daniel Distaso; Jinning Liu

AIP Conf. Proc. 866, 538–541 (2006) https://doi.org/10.1063/1.2401574

Abstract

View articletitled, Metrology Requirements For Single Wafer Ion Implanters

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Process Transferability from a Spot Beam to a Ribbon Beam Implanter: CMOS Device Matching

Vincent Kaeppelin; Zdenek Chalupa; Laurent Frioulaud; Sandeep Mehta; Baonian Guo; Kyu‐Ha Shim; Horst Lendzian; Yuri Erokhin

AIP Conf. Proc. 866, 353–356 (2006) https://doi.org/10.1063/1.2401529

Abstract

View articletitled, Process Transferability from a Spot Beam to a Ribbon Beam Implanter: CMOS Device Matching

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Superior Dose and Energy Monitoring Capability of the Therma‐Probe System

M. Bakshi; D. Shaughnessy; L. Nicolaides; P. Mitchell

AIP Conf. Proc. 866, 570–573 (2006) https://doi.org/10.1063/1.2401582

Abstract

View articletitled, Superior Dose and Energy Monitoring Capability of the Therma‐Probe System

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The Effect Of Flash Annealing On The Electrical Properties Of Indium/Carbon Co‐Implants in Silicon

S. Gennaro; D. Giubertoni; M. Bersani; J. Foggiato; W. S. Yoo; R. Gwilliam; M. Anderle

AIP Conf. Proc. 866, 113–116 (2006) https://doi.org/10.1063/1.2401474

Abstract

View articletitled, The Effect Of Flash Annealing On The Electrical Properties Of Indium/Carbon Co‐Implants in Silicon

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Nitrogen Plasma Ion Implantation of Al and Ti alloys in the High Voltage Glow Discharge Mode

R. M. Oliveira; M. Ueda; J. O. Rossi; H. Reuther; C. M. Lepienski; A. F. Beloto

AIP Conf. Proc. 866, 233–236 (2006) https://doi.org/10.1063/1.2401502

Abstract

View articletitled, Nitrogen Plasma Ion Implantation of Al and Ti alloys in the High Voltage Glow Discharge Mode

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Rising Microwave Frequency of a Broad‐Ion‐Beam ECR Source with Cylindrically Comb‐Shaped Magnetic Field Configuration

Toyohisa Asaji; Yushi Kato; Hiroshi Sasaki; Takashi Kubo; Fuminobu Sato; Toshiyuki Iida; Junji Saito

AIP Conf. Proc. 866, 389–392 (2006) https://doi.org/10.1063/1.2401538

Abstract

View articletitled, Rising Microwave Frequency of a Broad‐Ion‐Beam ECR Source with Cylindrically Comb‐Shaped Magnetic Field Configuration

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Sputtering and Chemical Modification of Solid Surfaces by Water Cluster Ion Beams

G. H. Takaoka; K. Nakayama; D. Takeda; M. Kawashita

AIP Conf. Proc. 866, 190–193 (2006) https://doi.org/10.1063/1.2401492

Abstract

View articletitled, Sputtering and Chemical Modification of Solid Surfaces by Water Cluster Ion Beams

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Structural Changes in Polymer Films by Fast Ion Implantation

M. A. Parada; R. A. Minamisawa; C. Muntele; I. Muntele; A. De Almeida; D. Ila

AIP Conf. Proc. 866, 304–307 (2006) https://doi.org/10.1063/1.2401518

Abstract

View articletitled, Structural Changes in Polymer Films by Fast Ion Implantation

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Optima MD: Mid‐Dose, Hybrid‐Scan Ion Implanter

K. W. Wenzel; A. M. Ray; B. H. Vanderberg; R. D. Rathmell

AIP Conf. Proc. 866, 637–640 (2006) https://doi.org/10.1063/1.2401598

Abstract

View articletitled, Optima MD: Mid‐Dose, Hybrid‐Scan Ion Implanter

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Surface Charge Profiling — An advancement in Ion Implant Monitoring

Christian Krueger; Che‐Hoo Ng; Zhiyong Zhao; Gerard Krytsch

AIP Conf. Proc. 866, 531–533 (2006) https://doi.org/10.1063/1.2401572

Abstract

View articletitled, Surface Charge Profiling — An advancement in Ion Implant Monitoring

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Angle Measurement and Control in High Current Ion Implantation

B. S. Freer; D. E. Hoglund; M. A. Graf

AIP Conf. Proc. 866, 507–510 (2006) https://doi.org/10.1063/1.2401567

Abstract

View articletitled, Angle Measurement and Control in High Current Ion Implantation

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The Concept of LDSI (Locally‐Differentiated‐Scanning Ion Implantation) for the Fine Threshold Voltage Control in Nano‐Scale FETs

Min‐Yong Lee; S. W. Jin; Y. S. Sohn; S. K. Na; K. B. Rouh; Y. S. Joung; Y. J. Ki; I. K. Han; Y. W. Song; S. W. Park

AIP Conf. Proc. 866, 62–64 (2006) https://doi.org/10.1063/1.2401462

Abstract

View articletitled, The Concept of LDSI (Locally‐Differentiated‐Scanning Ion Implantation) for the Fine Threshold Voltage Control in Nano‐Scale FETs

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Chicane Deceleration — An Innovative Energy Contamination Control Technique in Low Energy Ion Implantation

N. White; J. Chen; C. Mulcahy; S. Biswas; R. Gwilliam

AIP Conf. Proc. 866, 335–339 (2006) https://doi.org/10.1063/1.2401525

Abstract

View articletitled, Chicane Deceleration — An Innovative Energy Contamination Control Technique in Low Energy Ion Implantation

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Impact of Dose Rate Effects and Damage Engineering on Device Performance

Kyuha Shim; Yeonsang Hwang; Yongseung Lee; Jungsoo An; Seonho Ryu; Seungho Hahn; Changjune Cho; Namhae Hur; Baonian Guo; Jinning Liu; Yuri Erokhin

AIP Conf. Proc. 866, 137–139 (2006) https://doi.org/10.1063/1.2401480

Abstract

View articletitled, Impact of Dose Rate Effects and Damage Engineering on Device Performance

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Stencil mask Ion Implantation Technology for realistic approach to wafer process

Kazuhiko Tonari; Tsutomu Nishihashi; Michio Ishikawa; Junki Fujiyama

AIP Conf. Proc. 866, 401–404 (2006) https://doi.org/10.1063/1.2401541

Abstract

View articletitled, Stencil mask Ion Implantation Technology for realistic approach to wafer process

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Influence Of Energy Contamination At S/D‐Extension Dopant Implantation Using Ultra Fast Annealing

Marc Herden; Daniel Gehre; Thomas Feudel; Lutz Herrmann

AIP Conf. Proc. 866, 13–16 (2006) https://doi.org/10.1063/1.2401450

Abstract

View articletitled, Influence Of Energy Contamination At S/D‐Extension Dopant Implantation Using Ultra Fast Annealing

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Ion Implantation : A World Of Innovations

Michel Bruel

AIP Conf. Proc. 866, 76–83 (2006) https://doi.org/10.1063/1.2401466

Abstract

View articletitled, Ion Implantation : A World Of Innovations

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Characterization of Molecular Clusters in the Supersonic Gas Jet

Takeshi Kagawa; Fuminobu Sato; Yushi Kato; Yoshifumi Ito; Toshiyuki Iida

AIP Conf. Proc. 866, 218–224 (2006) https://doi.org/10.1063/1.2401499

Abstract

View articletitled, Characterization of Molecular Clusters in the Supersonic Gas Jet

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Modified Phasor‐Particle Model of Treating A Blocking Capacitor As A Phasor Element in Simulation of Plasma Coupling with An External Auto‐Matching Network

Dixon T. K. Kwok; Paul K. Chu

AIP Conf. Proc. 866, 245–248 (2006) https://doi.org/10.1063/1.2401505

Abstract

View articletitled, Modified Phasor‐Particle Model of Treating A Blocking Capacitor As A Phasor Element in Simulation of Plasma Coupling with An External Auto‐Matching Network

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Ultra‐Shallow Junctions Formed By Sub‐Melt Laser Annealing

S. B. Felch; A. Falepin; S. Severi; E. Augendre; T. Hoffman; T. Noda; V. Parihar; F. Nouri; R. Schreutelkamp

AIP Conf. Proc. 866, 129–132 (2006) https://doi.org/10.1063/1.2401478

Abstract

View articletitled, Ultra‐Shallow Junctions Formed By Sub‐Melt Laser Annealing

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High Dopant Activation And Low Damage P+ USJ Formation

John Borland; Seiichi Shishiguchi; Akira Mineji; Wade Krull; Dale Jacobson; Masayasu Tanjyo; Wilfried Lerch; Silke Paul; Jeff Gelpey; Steve McCoy; Julien Venturini; Michael Current; Vladimir Faifer; Robert Hillard; Mark Benjamin; Tom Walker; Andrzej Buczkowski; Zhiqiang Li; James Chen

AIP Conf. Proc. 866, 96–100 (2006) https://doi.org/10.1063/1.2401470

Abstract

View articletitled, High Dopant Activation And Low Damage P+ USJ Formation

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Rare Gas Ion Implanted‐Silicon Template for the Growth of Relaxed Si_1−xGe_x/Si (100)

G. Regula; M. Raissi; J.‐L. Lazzari; F. Chevrier; N. Burle; E. Ntsoenzok

AIP Conf. Proc. 866, 283–286 (2006) https://doi.org/10.1063/1.2401513

Abstract

View articletitled, Rare Gas Ion Implanted‐Silicon Template for the Growth of Relaxed Si1−xGex/Si (100)

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Direct Measurement of Beam Angle in a High Current Ion Implanter

B. S. Freer; L. M. Rubin; M. A. Graf; D. E. Hoglund; D. Newman; K. Ditzler; K. Elshot; T. Romig

AIP Conf. Proc. 866, 554–557 (2006) https://doi.org/10.1063/1.2401578

Abstract

View articletitled, Direct Measurement of Beam Angle in a High Current Ion Implanter

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Optimization of High‐Energy Implanter Beamline Pumping

Marvin LaFontaine; Michel Pharand; Yongzhang Huang; Ilya Pokidov; Joseph Ferrara

AIP Conf. Proc. 866, 453–456 (2006) https://doi.org/10.1063/1.2401554

Abstract

View articletitled, Optimization of High‐Energy Implanter Beamline Pumping

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Advanced Modeling Techniques for Analysis of High Current Ribbon Beam Transport and Control

Peter Kellerman; Frank Sinclair

AIP Conf. Proc. 866, 413–416 (2006) https://doi.org/10.1063/1.2401544

Abstract

View articletitled, Advanced Modeling Techniques for Analysis of High Current Ribbon Beam Transport and Control

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Increase of Beam Current Mass‐Separated by Long Gap Dipole Sector Magnet for S/D Process in FPD manufacturing

Shojiro Dohi; Yasunori Ando; Yutaka Inouchi; Yasuhiro Matsuda; Masashi Konishi; Junichi Tatemichi; Masaaki Nukayama; Kazuhiro Nakao; Kohichi Orihira; Masao Naito

AIP Conf. Proc. 866, 417–420 (2006) https://doi.org/10.1063/1.2401545

Abstract

View articletitled, Increase of Beam Current Mass‐Separated by Long Gap Dipole Sector Magnet for S/D Process in FPD manufacturing

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Plasma Immersion Ion Implantation with a 4kV/10kHz Compact High Voltage Pulser

M. Ueda; R. M. Oliveira; J. O. Rossi; H. Reuther; G. Silva

AIP Conf. Proc. 866, 237–240 (2006) https://doi.org/10.1063/1.2401503

Abstract

View articletitled, Plasma Immersion Ion Implantation with a 4kV/10kHz Compact High Voltage Pulser

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Hydrogen ion implantation mechanism in GaAs‐on‐insulator wafer formation by ion‐cut process

H. J. Woo; H. W. Choi; G. D. Kim; J. K. Kim; W. Hong; H. R. Lee

AIP Conf. Proc. 866, 308–312 (2006) https://doi.org/10.1063/1.2401519

Abstract

View articletitled, Hydrogen ion implantation mechanism in GaAs‐on‐insulator wafer formation by ion‐cut process

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Cross‐sectional TEM Observations of Si Wafers Irradiated With Gas Cluster Ion Beams

Hiromichi Isogai; Eiji Toyoda; Takeshi Senda; Koji Izunome; Kazuhiko Kashima; Noriaki Toyoda; Isao Yamada

AIP Conf. Proc. 866, 194–197 (2006) https://doi.org/10.1063/1.2401493

Abstract

View articletitled, Cross‐sectional TEM Observations of Si Wafers Irradiated With Gas Cluster Ion Beams

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Grazing Incidence angle X‐ray Diffraction of implanted stainless steel: comparison between simulated data and experimental data

J. Dudognon; M. Vayer; A. Pineau; R. Erre

AIP Conf. Proc. 866, 275–278 (2006) https://doi.org/10.1063/1.2401511

Abstract

View articletitled, Grazing Incidence angle X‐ray Diffraction of implanted stainless steel: comparison between simulated data and experimental data

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Time Dependence Study Of Hydrogen‐Induced Defects In Silicon During Thermal Anneals

S. Personnic; A. Tauzin; K. K. Bourdelle; F. Letertre; N. Kernevez; F. Laugier; N. Cherkashin; A. Claverie; R. Fortunier

AIP Conf. Proc. 866, 65–68 (2006) https://doi.org/10.1063/1.2401463

Abstract

View articletitled, Time Dependence Study Of Hydrogen‐Induced Defects In Silicon During Thermal Anneals

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Boron Redistribution During Crystallization of Phosphorus‐Doped Amorphous Silicon

R. Simola; D. Mangelinck; A. Portavoce; J. Bernardini; P. Fornara

AIP Conf. Proc. 866, 125–128 (2006) https://doi.org/10.1063/1.2401477

Abstract

View articletitled, Boron Redistribution During Crystallization of Phosphorus‐Doped Amorphous Silicon

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Impact of Fluorine co‐implant on Boron Diffusion during Non‐melt Laser Annealing

T. Noda; S. Felch; V. Parihar; C. Vrancken; T. Janssens; H. Bender; B. Van Daele; W. Vandervorst

AIP Conf. Proc. 866, 21–24 (2006) https://doi.org/10.1063/1.2401452

Abstract

View articletitled, Impact of Fluorine co‐implant on Boron Diffusion during Non‐melt Laser Annealing

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Deactivation of low energy Boron Implants into Pre‐amorphised Si after Non‐Melt Laser Annealing with Multiple Scans

J. A. Sharp; N. E. B. Cowern; R. P. Webb; D. Giubertoni; S. Gennaro; M. Bersani; M. A. Foad; K. J. Kirkby

AIP Conf. Proc. 866, 33–36 (2006) https://doi.org/10.1063/1.2401455

Abstract

View articletitled, Deactivation of low energy Boron Implants into Pre‐amorphised Si after Non‐Melt Laser Annealing with Multiple Scans

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Qualification of the GASGUARD® SAS GGT Arsine Sub‐Atmospheric Gas Delivery System for Ion Implantation

James P. Dunn; James L. Rolland; James S. Grim; Reinaldo M. Machado; Christopher L. Hartz

AIP Conf. Proc. 866, 481–484 (2006) https://doi.org/10.1063/1.2401561

Abstract

View articletitled, Qualification of the GASGUARD® SAS GGT Arsine Sub‐Atmospheric Gas Delivery System for Ion Implantation

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Manufacturing Precision Polysilicon Resistors Using Ion Implantation

Janet M. Towner

AIP Conf. Proc. 866, 590–593 (2006) https://doi.org/10.1063/1.2401587

Abstract

View articletitled, Manufacturing Precision Polysilicon Resistors Using Ion Implantation

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Non‐Contact, Image‐Based Photoluminescence Metrology for Ion Implantation and Annealing Process Inspection

Andrzej Buczkowski; Zhiqiang Li; Tom Walker; Steven G. Hummel; John O. Borland

AIP Conf. Proc. 866, 566–569 (2006) https://doi.org/10.1063/1.2401581

Abstract

View articletitled, Non‐Contact, Image‐Based Photoluminescence Metrology for Ion Implantation and Annealing Process Inspection

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Efficient High Current Process Transfer and Device Matching Strategies for sub‐90nm Manufacturing

Dennis Lee; NyenSiong Loh; Miow Chin Tan; Kyuha Shim; Scott Falk; Baonian Guo; Scott Jillson; Bryan Wong; Kherchong Loh; Sandeep Mehta; Yuri Erokhin

AIP Conf. Proc. 866, 472–474 (2006) https://doi.org/10.1063/1.2401559

Abstract

View articletitled, Efficient High Current Process Transfer and Device Matching Strategies for sub‐90nm Manufacturing

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Backing up Medium Current Implanters using Single Wafer High Energy Implanter for Manufacturing Efficiency

H. L. Sun; Woojin Lee; Knight Xu; H. Y. Tsun; K. T. Peng; L. S. Juang; H. P. Tseng

AIP Conf. Proc. 866, 385–388 (2006) https://doi.org/10.1063/1.2401537

Abstract

View articletitled, Backing up Medium Current Implanters using Single Wafer High Energy Implanter for Manufacturing Efficiency

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Implant Angle Deviation Reduction in Batch‐Type High Energy Implanter

Noriyuki Suetsugu; Tatsuya Yamada; Mitsukuni Tsukihara; Michiro Sugitani

AIP Conf. Proc. 866, 397–400 (2006) https://doi.org/10.1063/1.2401540

Abstract

View articletitled, Implant Angle Deviation Reduction in Batch‐Type High Energy Implanter

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Understanding The Calibration Methodology For The Axcelis GSD/HE Final Energy Magnet And A Means For Manipulating The Calibration Curve

Ronald Johnson; John Schuur

AIP Conf. Proc. 866, 630–632 (2006) https://doi.org/10.1063/1.2401596

Abstract

View articletitled, Understanding The Calibration Methodology For The Axcelis GSD/HE Final Energy Magnet And A Means For Manipulating The Calibration Curve

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Development of an Ion Beam Aligner for Liquid Crystal Displays

Takeshi Matsumoto; Yasuhiro Matsuda; Masahiro Tanii; Masashi Konishi; Yasunori Andoh

AIP Conf. Proc. 866, 429–432 (2006) https://doi.org/10.1063/1.2401548

Abstract

View articletitled, Development of an Ion Beam Aligner for Liquid Crystal Displays

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Micro‐patterned porous silicon using proton beam writing

M. B. H. Breese; D. Mangaiyarkarasi; E. J. Teo; A. A. Bettiol; D. Blackwood

AIP Conf. Proc. 866, 269–274 (2006) https://doi.org/10.1063/1.2401510

Abstract

View articletitled, Micro‐patterned porous silicon using proton beam writing

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An Electron Cyclotron Resonance Ion Source with Cylindrically Comb‐Shaped Magnetic Field Configuration

Yushi Kato; Hiroshi Sasaki; Toyohisa Asaji; Takashi Kubo; Fuminobu Sato; Toshiyuki Iida

AIP Conf. Proc. 866, 373–376 (2006) https://doi.org/10.1063/1.2401534

Abstract

View articletitled, An Electron Cyclotron Resonance Ion Source with Cylindrically Comb‐Shaped Magnetic Field Configuration

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Real‐time Optimization Method for Optical Parameters of Ion Implanters

Seiji Ogata; Tsutomu Nishihashi; Kazuhiko Tonari; Hidekazu Yokoo; Hideo Suzuki; Takeshi Hisamune; Masasumi Araki

AIP Conf. Proc. 866, 433–436 (2006) https://doi.org/10.1063/1.2401549

Abstract

View articletitled, Real‐time Optimization Method for Optical Parameters of Ion Implanters

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An Adaptive Knowledge‐based Ion Source Automation Methodology To Improve Beam to Beam Switch Performance On Applied Materials Quantum® X Single Wafer Ion Implanter

Chris Burgess; Martin Keane; Robert Oliver

AIP Conf. Proc. 866, 649–652 (2006) https://doi.org/10.1063/1.2401601

Abstract

View articletitled, An Adaptive Knowledge‐based Ion Source Automation Methodology To Improve Beam to Beam Switch Performance On Applied Materials Quantum® X Single Wafer Ion Implanter

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Nissin Ion Equipment Indirectly Heated Cathode Ion

Kohei Tanaka; Sei Umisedo; Kenji Miyabayashi; Hideki Fujita; Toshiaki Kinoyama; Nariaki Hamamoto; Takatoshi Yamashita; Masayasu Tanjyo

AIP Conf. Proc. 866, 421–424 (2006) https://doi.org/10.1063/1.2401546

Abstract

View articletitled, Nissin Ion Equipment Indirectly Heated Cathode Ion

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Universal Ion Source™ for Cluster and Monomer Implantation

Thomas N. Horsky

AIP Conf. Proc. 866, 159–162 (2006) https://doi.org/10.1063/1.2401484

Abstract

View articletitled, Universal Ion Source™ for Cluster and Monomer Implantation

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A Beam Line System for a Commercial Borohydride Ion Implanter

H. F. Glavish; T. N. Horsky; D. C. Jacobson; F. Sinclair; N. Hamamoto; N. Nagai; M. Naito

AIP Conf. Proc. 866, 167–170 (2006) https://doi.org/10.1063/1.2401486

Abstract

View articletitled, A Beam Line System for a Commercial Borohydride Ion Implanter

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Characterisation Of The Beam Plasma In High Current, Low Energy Ion Beams For Implanters

J. Fiala; D. G. Armour; J. A. van den Berg; A. J. T. Holmes; R. D. Goldberg; E. H. J. Collart

AIP Conf. Proc. 866, 340–344 (2006) https://doi.org/10.1063/1.2401526

Abstract

View articletitled, Characterisation Of The Beam Plasma In High Current, Low Energy Ion Beams For Implanters

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A Safe Solution to Dopant Gas Desorption from Metal Surfaces

Tsutomu Nakanoya; Maki Egami

AIP Conf. Proc. 866, 493–496 (2006) https://doi.org/10.1063/1.2401564

Abstract

View articletitled, A Safe Solution to Dopant Gas Desorption from Metal Surfaces

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Ion Sources for High and Low Energy Extremes of Ion Implantation

AIP Conf. Proc. 866, 369–372 (2006) https://doi.org/10.1063/1.2401533

Abstract

View articletitled, Ion Sources for High and Low Energy Extremes of Ion Implantation

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Study on chemical binding states of silicon in conjunction with ultra‐shallow plasma doping by using Hard X‐ray Photoelectron spectroscopy (HX‐PES)

C. G. Jin; Y. Sasaki; K. Okashita; H. Tamura; H. Ito; B. Mizuno; T. Okumura; M. Kobata; J. J. Kim; E. Ikenaga; K. Kobayashi

AIP Conf. Proc. 866, 546–549 (2006) https://doi.org/10.1063/1.2401576

Abstract

View articletitled, Study on chemical binding states of silicon in conjunction with ultra‐shallow plasma doping by using Hard X‐ray Photoelectron spectroscopy (HX‐PES)

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Formation of ultrashallow junctions less than 10nm with the combination of low energy B ion implantation and laser annealing

Ryuta Yamada; Singo Seto; Sosi Sato; Yuki Tanaka; Satoru Matumoto; Toshiharu Suzuki; Gensyu Fuse; Tosio Kudo; Susumu Sakuragi

AIP Conf. Proc. 866, 17–20 (2006) https://doi.org/10.1063/1.2401451

Abstract

View articletitled, Formation of ultrashallow junctions less than 10nm with the combination of low energy B ion implantation and laser annealing

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Characterizing Dopant Contamination Using Ion Implantation

John J. Naughton; Janet M. Towner

AIP Conf. Proc. 866, 586–589 (2006) https://doi.org/10.1063/1.2401586

Abstract

View articletitled, Characterizing Dopant Contamination Using Ion Implantation

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Source Life Improvement For Germanium Implant

Andrew Allen; Peter Banks; Sukanta Biswas; Christopher Mulcahy

AIP Conf. Proc. 866, 365–368 (2006) https://doi.org/10.1063/1.2401532

Abstract

View articletitled, Source Life Improvement For Germanium Implant

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Thermal Diffusion Barrier for Ag Atoms Implanted in Silicon Dioxide Layer on Silicon Substrate and Monolayer Formation of Nanoparticles

Hiroshi Tsuji; Nobutoshi Arai; Naoyuki Gotoh; Takashi Minotani; Toyotsugu Ishibashi; Tetsuya Okumine; Kouichiro Adachi; Hiroshi Kotaki; Yasuhito Gotoh; Junzo Ishikawa

AIP Conf. Proc. 866, 295–299 (2006) https://doi.org/10.1063/1.2401516

Abstract

View articletitled, Thermal Diffusion Barrier for Ag Atoms Implanted in Silicon Dioxide Layer on Silicon Substrate and Monolayer Formation of Nanoparticles

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The Development of In‐Situ Ion Implant Cleaning Processes

Steve Bishop; Robert Kaim; Sharad Yedave; Josep Arnó; Frank DiMeo, Jr.; Mike Wodjenski

AIP Conf. Proc. 866, 477–480 (2006) https://doi.org/10.1063/1.2401560

Abstract

View articletitled, The Development of In‐Situ Ion Implant Cleaning Processes

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65nm Device Characteristics Matching on Single and Batch System Ion Implanter

Ken‐ichi Okabe; Ryuichi Miura; Masataka Kase

AIP Conf. Proc. 866, 645–648 (2006) https://doi.org/10.1063/1.2401600

Abstract

View articletitled, 65nm Device Characteristics Matching on Single and Batch System Ion Implanter

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Metrology and High Resolution Mapping of Shallow Junctions Formed by Low Energy Implant Processes

Eric Don; Aron Pap; Peter Tutto; Tibor Pavelka; Christophe Wyon; Cyrille Laviron; David Sotta; Richard Oechsner; Marcus Pfeffer

AIP Conf. Proc. 866, 534–537 (2006) https://doi.org/10.1063/1.2401573

Abstract

View articletitled, Metrology and High Resolution Mapping of Shallow Junctions Formed by Low Energy Implant Processes

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Production‐Worthy USJ Formation by Self‐Regulatory Plasma Doping Method

Y. Sasaki; H. Ito; K. Okashita; H. Tamura; C. G. Jin; B. Mizuno; T. Okumura; I. Aiba; Y. Fukagawa; H. Sauddin; K. Tsutsui; H. Iwai

AIP Conf. Proc. 866, 524–527 (2006) https://doi.org/10.1063/1.2401571

Abstract

View articletitled, Production‐Worthy USJ Formation by Self‐Regulatory Plasma Doping Method

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Ion Implanter Cross Contamination And Maintenance Safety Considerations With High Dose Phosphorus

Ron Eddy; Brett Ostrowski; Ming Hong Yang; Darryl Huntington

AIP Conf. Proc. 866, 361–364 (2006) https://doi.org/10.1063/1.2401531

Abstract

View articletitled, Ion Implanter Cross Contamination And Maintenance Safety Considerations With High Dose Phosphorus

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Boron Ion Implantation into Silicon by Use of the Boron Vacuum‐Arc Plasma Generator

J. M. Williams; C. C. Klepper; D. J. Chivers; R. C. Hazelton; J. J. Moschella; M. D. Keitz

AIP Conf. Proc. 866, 261–265 (2006) https://doi.org/10.1063/1.2401509

Abstract

View articletitled, Boron Ion Implantation into Silicon by Use of the Boron Vacuum‐Arc Plasma Generator

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Layer Transfer of SOI Structures Using a Pre‐Stressed Bonding Layer

Vorrada Loryuenyong; Nathan Cheung

AIP Conf. Proc. 866, 69–72 (2006) https://doi.org/10.1063/1.2401464

Abstract

View articletitled, Layer Transfer of SOI Structures Using a Pre‐Stressed Bonding Layer

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Strain‐Enhanced Activation of Sb Ultrashallow Junctions

N. S. Bennett; L. O’Reilly; A. J. Smith; R. M. Gwilliam; P. J. McNally; N. E. B. Cowern; B. J. Sealy

AIP Conf. Proc. 866, 54–57 (2006) https://doi.org/10.1063/1.2401460

Abstract

View articletitled, Strain‐Enhanced Activation of Sb Ultrashallow Junctions

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High Dose Hydrogen Implant Blistering Effects As a Function of Selected Implanter And Substrate Conditions

Ronald Eddy; Chuck Hudak; Pamla Bettincurt; Sandra Delgado

AIP Conf. Proc. 866, 313–316 (2006) https://doi.org/10.1063/1.2401520

Abstract

View articletitled, High Dose Hydrogen Implant Blistering Effects As a Function of Selected Implanter And Substrate Conditions

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Effects Of Ion Energy On Nitrogen Plasma Immersion Ion Implantation In UHMWPE Polymer Through A Metal Grid

M. Ueda; R. M. Oliveira; J. O. Rossi; C. M. Lepienski; W. A. Vilela

AIP Conf. Proc. 866, 241–244 (2006) https://doi.org/10.1063/1.2401504

Abstract

View articletitled, Effects Of Ion Energy On Nitrogen Plasma Immersion Ion Implantation In UHMWPE Polymer Through A Metal Grid

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Spike Annealing of Shallow Arsenic and Phosphorus Implants in Different Gaseous Ambient

S. Paul; W. Lerch; D. Bolze

AIP Conf. Proc. 866, 109–112 (2006) https://doi.org/10.1063/1.2401473

Abstract

View articletitled, Spike Annealing of Shallow Arsenic and Phosphorus Implants in Different Gaseous Ambient

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The Influence of Ion Implantation on cell Attachment to Glassy Polymeric Carbon

R. Zimmerman; I. Gurhan; F. Ozdal‐Kurt; B. H. Sen; M. Rodrigues; D. Ila

AIP Conf. Proc. 866, 329–331 (2006) https://doi.org/10.1063/1.2401524

Abstract

View articletitled, The Influence of Ion Implantation on cell Attachment to Glassy Polymeric Carbon

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Dose Retention Effects in Atomic Boron and ClusterBoron™ (B₁₈H₂₂) Implant Processes

Mark A. Harris; L. Rubin; D. Tieger; V. Venezia; T. J. Hsieh; J. Miranda; D. Jacobson

AIP Conf. Proc. 866, 155–158 (2006) https://doi.org/10.1063/1.2401483

Abstract

View articletitled, Dose Retention Effects in Atomic Boron and ClusterBoron™ (B18H22) Implant Processes

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Local Arsenic Structure in Shallow Implants in Si following SPER: an EXAFS and MEIS study

G. Pepponi; D. Giubertoni; S. Gennaro; M. Bersani; M. Anderle; R. Grisenti; M. Werner; J. A. Van Den Berg

AIP Conf. Proc. 866, 117–120 (2006) https://doi.org/10.1063/1.2401475

Abstract

View articletitled, Local Arsenic Structure in Shallow Implants in Si following SPER: an EXAFS and MEIS study

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Investigation of Converted p⁺ poly‐Si Gate Formed by $B_{18} H_{X}^{+}$ Cluster Ion Implantation

Sun‐Hwan Hwang; D. S. Kim; Y. H. Joo; J. G. Oh; J. K. Lee; T. W. Jung; H. J. Cho; Y. S. Sohn; D. S. Sheen; S. H. Pyi; Steve Kim; T. H. Huh; W. A. Krull; H. T. Cho

AIP Conf. Proc. 866, 163–166 (2006) https://doi.org/10.1063/1.2401485

Abstract

View articletitled, Investigation of Converted p+ poly‐Si Gate Formed by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">B</mi><mrow><mn>18</mn></mrow></msub><msubsup xmlns=""><mi mathvariant="normal">H</mi><mrow><mi mathvariant="normal">X</mi></mrow><mrow><mi>+</mi></mrow></msubsup></math> Cluster Ion Implantation

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Characterization of B₂H₆ Plasma Doping for Converted p⁺ Poly‐Si Gate

Jae‐Geun Oh; J. K. Lee; S. H. Hwang; H. J. Cho; Y. S. Sohn; D. S. Sheen; S. H. Pyi; S. W. Lee; S. H. Hahn; Y. B. Jeon; Z. Fang; V. Singh

AIP Conf. Proc. 866, 25–28 (2006) https://doi.org/10.1063/1.2401453

Abstract

View articletitled, Characterization of B2H6 Plasma Doping for Converted p+ Poly‐Si Gate

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Boron Beam Performance and in‐situ Cleaning of the ClusterIon® Source

Thomas N. Horsky; Glen F. R. Gilchrist; Robert W. Milgate, III

AIP Conf. Proc. 866, 198–201 (2006) https://doi.org/10.1063/1.2401494

Abstract

View articletitled, Boron Beam Performance and in‐situ Cleaning of the ClusterIon® Source

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Defect Behavior in BF₂ Implants For S/D Applications as a Function of Ion Beam Characteristics

Nathalie Cagnat; Cyrille Laviron; Nicolas Auriac; Jinning Liu; Sandeep Mehta; Laurent Frioulaud; Daniel Mathiot

AIP Conf. Proc. 866, 133–136 (2006) https://doi.org/10.1063/1.2401479

Abstract

View articletitled, Defect Behavior in BF2 Implants For S/D Applications as a Function of Ion Beam Characteristics

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Investigation of Amorphous Layer Formation Using Applied QUANTUM X Single Wafer And QUANTUM Batch Implanter

Roisin Doherty; Brendan Mc Comb; Richard Ting; Yu Chin Cheng

AIP Conf. Proc. 866, 92–95 (2006) https://doi.org/10.1063/1.2401469

Abstract

View articletitled, Investigation of Amorphous Layer Formation Using Applied QUANTUM X Single Wafer And QUANTUM Batch Implanter

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Effects of Hydrogen Atoms on Redistribution of Implanted Boron Atoms in Silicon during Annealing

Katsuhiro Yokota; Shuusaku Nakase; Fumiyoshi Miyashita

AIP Conf. Proc. 866, 88–91 (2006) https://doi.org/10.1063/1.2401468

Abstract

View articletitled, Effects of Hydrogen Atoms on Redistribution of Implanted Boron Atoms in Silicon during Annealing

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Investigation Of The Impact On Device Parameters of Fluorine Enhanced Oxide In A Power Trench MOSFET

Jeffrey H. Rice; Chun‐Tai Wu

AIP Conf. Proc. 866, 279–282 (2006) https://doi.org/10.1063/1.2401512

Abstract

View articletitled, Investigation Of The Impact On Device Parameters of Fluorine Enhanced Oxide In A Power Trench MOSFET

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ClusterBoron™ Implants on a High Current Implanter

Daniel R. Tieger; William DiVergilio; Edward C. Eisner; Mark Harris; T. J. Hsieh; John Miranda; William P. Reynolds; Tom Horsky

AIP Conf. Proc. 866, 206–209 (2006) https://doi.org/10.1063/1.2401496

Abstract

View articletitled, ClusterBoron™ Implants on a High Current Implanter

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A Vaporizer for Decaborane and Octadecaborane

Doug Adams; Tom Horsky; Glen Gilchrist; Robert Milgate; Joe Sweeney; Paul Marganski

AIP Conf. Proc. 866, 178–181 (2006) https://doi.org/10.1063/1.2401489

Abstract

View articletitled, A Vaporizer for Decaborane and Octadecaborane

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Tuning of Etching Rate by Implantation: Silicon, Polysilicon and Oxide

Rémy Charavel; Jean‐Pierre Raskin

AIP Conf. Proc. 866, 325–328 (2006) https://doi.org/10.1063/1.2401523

Abstract

View articletitled, Tuning of Etching Rate by Implantation: Silicon, Polysilicon and Oxide

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Size Analysis of Ethanol Cluster Ions and Their Sputtering Effects on Solid Surfaces

G. H. Takaoka; K. Nakayama; T. Okada; M. Kawashita

AIP Conf. Proc. 866, 321–324 (2006) https://doi.org/10.1063/1.2401522

Abstract

View articletitled, Size Analysis of Ethanol Cluster Ions and Their Sputtering Effects on Solid Surfaces

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Improved Techniques for Characterization and Optimization of SIMOX Implantation

R. Dolan; C. McKenna; S. Richards; Y. Aoki; T. Nakai; S. Nakamura; M. Walden

AIP Conf. Proc. 866, 578–581 (2006) https://doi.org/10.1063/1.2401584

Abstract

View articletitled, Improved Techniques for Characterization and Optimization of SIMOX Implantation

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Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon‐On‐Insulator

J. J. Hamilton; E. J. H. Collart; M. Bersani; D. Giubertoni; S. Gennaro; N. S. Bennett; N. E. B. Cowern; K. J. Kirkby

AIP Conf. Proc. 866, 73–75 (2006) https://doi.org/10.1063/1.2401465

Abstract

View articletitled, Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon‐On‐Insulator

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Fluorine Profile Distortion upon Annealing by the Presence of a CVD Grown Boron Box

P. López; L. Pelaz; R. Duffy; P. Meunier‐Beillard; K. van der Tak; F. Roozeboom; G. Maas

AIP Conf. Proc. 866, 29–32 (2006) https://doi.org/10.1063/1.2401454

Abstract

View articletitled, Fluorine Profile Distortion upon Annealing by the Presence of a CVD Grown Boron Box

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Water Splitting and Hydrogen Emitting Catalytic Function of Hydrogen‐Implanted Oxide Ceramics Studied Using Ion Beam Technology

K. Morita; B. Tsuchiya; S. Nagata; K. Katahira; M. Yoshino; J. Yuhara; Y. Arita; T. Ishijima; H. Sugai

AIP Conf. Proc. 866, 300–303 (2006) https://doi.org/10.1063/1.2401517

Abstract

View articletitled, Water Splitting and Hydrogen Emitting Catalytic Function of Hydrogen‐Implanted Oxide Ceramics Studied Using Ion Beam Technology

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Germanium … The Semiconductor of Tomorrow?

A. R. Peaker; A. Satta; V. P. Markevich; E. Simoen; B. Hamilton

AIP Conf. Proc. 866, 3–8 (2006) https://doi.org/10.1063/1.2401448

Abstract

View articletitled, Germanium … The Semiconductor of Tomorrow?

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Enhancing the Ibis i2000™ SIMOX Oxygen Ion Implanter

C. McKenna; R. Dolan; J. Blake; S. Richards

AIP Conf. Proc. 866, 622–625 (2006) https://doi.org/10.1063/1.2401594

Abstract

View articletitled, Enhancing the Ibis i2000™ SIMOX Oxygen Ion Implanter

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Annealing of TiO₂ Films Deposited on Si by Irradiating Nitrogen Ion Beams

Katsuhiro Yokota; Yoshinori Yano; Fumiyoshi Miyashita

AIP Conf. Proc. 866, 291–294 (2006) https://doi.org/10.1063/1.2401515

Abstract

View articletitled, Annealing of TiO2 Films Deposited on Si by Irradiating Nitrogen Ion Beams

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Controlling Dopant Diffusion and Activation through Surface Chemistry

K. Dev; C. T. M. Kwok; R. Vaidyanathan; R. D. Braatz; E. G. Seebauer

AIP Conf. Proc. 866, 50–53 (2006) https://doi.org/10.1063/1.2401459

Abstract

View articletitled, Controlling Dopant Diffusion and Activation through Surface Chemistry

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The Impact of Mass Resolution on Molybdenum Contamination for B, P, BF₂, and As Implantations

Volker Häublein; Lothar Frey; Heiner Ryssel

AIP Conf. Proc. 866, 464–467 (2006) https://doi.org/10.1063/1.2401557

Abstract

View articletitled, The Impact of Mass Resolution on Molybdenum Contamination for B, P, BF2, and As Implantations

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High Temperature Implantation of Aluminum in 4H Silicon Carbide

M. Rambach; A. J. Bauer; H. Ryssel

AIP Conf. Proc. 866, 287–290 (2006) https://doi.org/10.1063/1.2401514

Abstract

View articletitled, High Temperature Implantation of Aluminum in 4H Silicon Carbide

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Optimised Charging Performance On Quantum X Ion Implanters

David A. Kirkwood; Takao Sakase; Ryuichi Miura; Richard D. Goldberg; Adrian J. Murrell

AIP Conf. Proc. 866, 641–644 (2006) https://doi.org/10.1063/1.2401599

Abstract

View articletitled, Optimised Charging Performance On Quantum X Ion Implanters

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Improved Ion Beam Incident Angle Control for Varian E220 and E500 Implanters

David Hendrix; Zhiyong Zhao; Reuel Liebert; Ken Gifford; Pierre Mitchell

AIP Conf. Proc. 866, 425–428 (2006) https://doi.org/10.1063/1.2401547

Abstract

View articletitled, Improved Ion Beam Incident Angle Control for Varian E220 and E500 Implanters

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Gate Dielectric Damage Due To High‐Tilt Implant

S. B. Felch; R. Hung; B. Ninan; M. Smayling; N. Toshiyuki; H. Chen; C.‐P. Chang

AIP Conf. Proc. 866, 516–519 (2006) https://doi.org/10.1063/1.2401569

Abstract

View articletitled, Gate Dielectric Damage Due To High‐Tilt Implant

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Manufacturing Assessment of SDS3® Gas Upgrade

James P. Dunn; James Rolland; James Grim; Bob Brown

AIP Conf. Proc. 866, 485–488 (2006) https://doi.org/10.1063/1.2401562

Abstract

View articletitled, Manufacturing Assessment of SDS3® Gas Upgrade

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Dopant Cylinder Lifetime Monitor

Steve Bishop; Michael Wodjenski; Robert Kaim; Steve Lurcott; Jim McManus; Gordon Smith

AIP Conf. Proc. 866, 497–500 (2006) https://doi.org/10.1063/1.2401565

Abstract

View articletitled, Dopant Cylinder Lifetime Monitor

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ATMI’s Ion Implant Process Efficiency Research Laboratory (IIPERL)

Sharad Yedave; Josep Arnó; Steve Bishop; Frank DiMeo, Jr.; Robert Kaim; Luping Wang

AIP Conf. Proc. 866, 489–492 (2006) https://doi.org/10.1063/1.2401563

Abstract

View articletitled, ATMI’s Ion Implant Process Efficiency Research Laboratory (IIPERL)

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Indium Performance on the V810

Russell J. Low; Qing Zhai

AIP Conf. Proc. 866, 626–629 (2006) https://doi.org/10.1063/1.2401595

Abstract

View articletitled, Indium Performance on the V810

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Advanced Charge Control for Single Wafer Implanters

P. F. Kurunczi; A. S. Perel; E. Wright; S. Kikuchi; J. T. Scheuer

AIP Conf. Proc. 866, 445–448 (2006) https://doi.org/10.1063/1.2401552

Abstract

View articletitled, Advanced Charge Control for Single Wafer Implanters

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B₂H₆ PLAD Doped PMOS Device Performance

Z. Fang; T. Miller; E. Winder; H. Persing; E. Arevalo; A. Gupta; T. Parrill; V. Singh; S. Qin; A. McTeer

AIP Conf. Proc. 866, 249–252 (2006) https://doi.org/10.1063/1.2401506

Abstract

View articletitled, B2H6 PLAD Doped PMOS Device Performance

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Enhanced Dosimetry For Single Wafer High‐Current Implanters

J. T. Scheuer; J. Dzengeleski; D. Distaso; D. Timberlake; J. Cummings; J. C. Olson

AIP Conf. Proc. 866, 405–408 (2006) https://doi.org/10.1063/1.2401542

Abstract

View articletitled, Enhanced Dosimetry For Single Wafer High‐Current Implanters

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Applied Quantum X Implant System: Technology Enhancements to Enable Production‐Worthy Performance at the 45 nm Node

Adrian Murrell; Peter Edwards; Richard Goldberg; Peter Banks; Bob Mitchell; Erik Collart; Sean Morley; Geoffrey Ryding; Theodore Smick; Marvin Farley; Takao Sakase; David Hacker; Peter Kindersley

AIP Conf. Proc. 866, 618–621 (2006) https://doi.org/10.1063/1.2401593

Abstract

View articletitled, Applied Quantum X Implant System: Technology Enhancements to Enable Production‐Worthy Performance at the 45 nm Node

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Productivity Enhancements for Shallow Junctions and DRAM Applications using Infusion Doping

John Hautala; Matt Gwinn; Wes Skinner; Yan Shao

AIP Conf. Proc. 866, 174–177 (2006) https://doi.org/10.1063/1.2401488

Abstract

View articletitled, Productivity Enhancements for Shallow Junctions and DRAM Applications using Infusion Doping

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Process Control in Production‐Worthy Plasma Doping Technology

Edmund J. Winder; Ziwei Fang; Edwin Arevalo; Tim Miller; Harold Persing; Vikram Singh; T. M. Parrill

AIP Conf. Proc. 866, 511–515 (2006) https://doi.org/10.1063/1.2401568

Abstract

View articletitled, Process Control in Production‐Worthy Plasma Doping Technology

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20 Years History of Fundamental Research on Gas Cluster Ion Beams, and Current Status of the Applications to Industry

Isao Yamada

AIP Conf. Proc. 866, 147–154 (2006) https://doi.org/10.1063/1.2401482

Abstract

View articletitled, 20 Years History of Fundamental Research on Gas Cluster Ion Beams, and Current Status of the Applications to Industry

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Defectivity Reduction and Control In Ion Implant Systems Through Hardware and Process Optimization

Dirk‐Wito Franke; Falk Hundt; Tobias Guenther; Matthias Schmeide; Ronald N. Reece; Christopher E. Ferrell; Bernhard Krimbacher; Falk Haerting; John Grant

AIP Conf. Proc. 866, 441–444 (2006) https://doi.org/10.1063/1.2401551

Abstract

View articletitled, Defectivity Reduction and Control In Ion Implant Systems Through Hardware and Process Optimization

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Well Design In A Bulk CMOS Technology With Low Mask Count

M. P. M. Jank; C. Kandziora; L. Frey; H. Ryssel

AIP Conf. Proc. 866, 121–124 (2006) https://doi.org/10.1063/1.2401476

Abstract

View articletitled, Well Design In A Bulk CMOS Technology With Low Mask Count

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Automated Dose and Dopant Level Monitoring by SIMS

Hans Maul; Norbert Loibl; Ulrich Ehrke; Alex Merkulov; Paula Peres; Michel Schuhmacher

AIP Conf. Proc. 866, 594–598 (2006) https://doi.org/10.1063/1.2401588

Abstract

View articletitled, Automated Dose and Dopant Level Monitoring by SIMS

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Maximizing Productivity for Well Implantation

Qing Zhai; Youn Ki Kim; Dennis Rodier; Naushad Variam

AIP Conf. Proc. 866, 468–471 (2006) https://doi.org/10.1063/1.2401558

Abstract

View articletitled, Maximizing Productivity for Well Implantation

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Real World Experience With Ion Implant Fault Detection at Freescale Semiconductor

David C. Sing; Terry Breeden; Hassan Fakhreddine; Steven Gladwin; Jason Locke; Jim McHugh; Michael Rendon

AIP Conf. Proc. 866, 503–506 (2006) https://doi.org/10.1063/1.2401566

Abstract

View articletitled, Real World Experience With Ion Implant Fault Detection at Freescale Semiconductor

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Application of Stencil Mask Ion Implantation Technology to Power Semiconductors

T. Nishiwaki; H. Saito; K. Hamada; K. Tonari; T. Nishihashi

AIP Conf. Proc. 866, 357–360 (2006) https://doi.org/10.1063/1.2401530

Abstract

View articletitled, Application of Stencil Mask Ion Implantation Technology to Power Semiconductors

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Optimized Autotuning for Single Wafer High‐Current and Medium‐Current Implanters

J. T. Scheuer; A. Cucchetti; M. Welsch; W. Callahan; K. Luey; J. C. Olson

AIP Conf. Proc. 866, 381–384 (2006) https://doi.org/10.1063/1.2401536

Abstract

View articletitled, Optimized Autotuning for Single Wafer High‐Current and Medium‐Current Implanters

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Cluster size effects of gas cluster ion beams on surface modification

N. Toyoda; I. Yamada

AIP Conf. Proc. 866, 210–213 (2006) https://doi.org/10.1063/1.2401497

Abstract

View articletitled, Cluster size effects of gas cluster ion beams on surface modification

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Advanced Single Wafer High Current Beamline Architecture for Sub‐65nm

G. Redinbo; C. Campbell; J. Mullin

AIP Conf. Proc. 866, 614–617 (2006) https://doi.org/10.1063/1.2401592

Abstract

View articletitled, Advanced Single Wafer High Current Beamline Architecture for Sub‐65nm

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Implant Angle Monitoring — A Comparison of Channeling Features

Mark A. Rathmell

AIP Conf. Proc. 866, 437–440 (2006) https://doi.org/10.1063/1.2401550

Abstract

View articletitled, Implant Angle Monitoring — A Comparison of Channeling Features

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