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Back Matter for Volume 817
AIP Conf. Proc. 817, backmatter (2006)
https://doi.org/10.1063/v817.backmatter
Front Matter for Volume 817
AIP Conf. Proc. 817, frontmatter (2006)
https://doi.org/10.1063/v817.frontmatter
Effects of Mechanical Properties on the Circuit‐Level Reliability of Cu/low‐k Metallization
AIP Conf. Proc. 817, 231–243 (2006)
https://doi.org/10.1063/1.2173555
Statistical Analysis of Electromigration Lifetimes for Cu Interconnects
M. Hauschildt; M. Gall; S. Thrasher; P. Justison; L. Michaelson; R. Hernandez; H. Kawasaki; P. S. Ho
AIP Conf. Proc. 817, 164–174 (2006)
https://doi.org/10.1063/1.2173546
X‐ray Microscopy Studies of Electromigration in Advanced Copper Interconnects
AIP Conf. Proc. 817, 217–222 (2006)
https://doi.org/10.1063/1.2173553
Scaling of Metal Interconnects: Challenges to Functionality and Reliability
AIP Conf. Proc. 817, 3–12 (2006)
https://doi.org/10.1063/1.2173526
Thermal Behavior of Graded Ta‐Si/Ta‐Si‐N Diffusion Barriers for Cu Metallization
AIP Conf. Proc. 817, 59–64 (2006)
https://doi.org/10.1063/1.2173532
Simulation of Microstructure Influence on EM‐Induced Degradation in Cu Interconnects
AIP Conf. Proc. 817, 244–253 (2006)
https://doi.org/10.1063/1.2173556
Temperature‐Dependent Stress Measurements at Inlaid Copper Interconnect Lines
AIP Conf. Proc. 817, 277–287 (2006)
https://doi.org/10.1063/1.2173560
X‐Ray Microdiffraction as a Probe to Reveal Flux Divergences in Interconnects
AIP Conf. Proc. 817, 288–295 (2006)
https://doi.org/10.1063/1.2173561
Effect of Overburden Thickness on the Copper Microstructure of Dual‐Inlaid Interconnect Structures
AIP Conf. Proc. 817, 211–216 (2006)
https://doi.org/10.1063/1.2173552
Chip‐Packaging Interaction and Reliability Impact on Cu/Low k Interconnects
AIP Conf. Proc. 817, 73–82 (2006)
https://doi.org/10.1063/1.2173534
Strain Energy Effects on Texture Evolution in Thin Films: Biaxial vs. Uniaxial Stress State
AIP Conf. Proc. 817, 192–197 (2006)
https://doi.org/10.1063/1.2173549
Mechanical Properties of Low‐k Materials on the Nanometer Scale
AIP Conf. Proc. 817, 110–116 (2006)
https://doi.org/10.1063/1.2173539
Formation and Film Characteristics of Dual Damascene Interconnects by Bottom‐up Electroless Cu Plating
AIP Conf. Proc. 817, 13–22 (2006)
https://doi.org/10.1063/1.2173527
Self‐Formed Barrier with Cu‐Mn alloy Metallization and its Effects on Reliability
AIP Conf. Proc. 817, 43–51 (2006)
https://doi.org/10.1063/1.2173530
Stresses in Laterally Structured Copper Layer Systems Studied by X‐ray Diffraction
AIP Conf. Proc. 817, 296–302 (2006)
https://doi.org/10.1063/1.2173562
Thermomechanical Behavior of Thin Metal Films under Different Ambient Conditions
AIP Conf. Proc. 817, 98–103 (2006)
https://doi.org/10.1063/1.2173537
Experimental and Numerical Studies of Stress Migration in Cu Interconnects Embedded in Different Dielectrics
AIP Conf. Proc. 817, 269–274 (2006)
https://doi.org/10.1063/1.2173559
Adhesion Studies in Low‐k Interconnects Using Cross Sectional Nanoindentation
J. M. Molina‐Aldareguia; I. Ocaña; D. Gonzalez; M. R. Elizalde; J. M. Sánchez; J. M. Martínez‐Esnaola; J. Gil Sevillano; T. Scherban; D. Pantuso; B. Sun; G. Xu; B. Miner; J. He; J. Maiz
AIP Conf. Proc. 817, 104–109 (2006)
https://doi.org/10.1063/1.2173538
Chemical Bonding in Low‐k Dielectric Materials for Interconnect Isolation: Characterization using XAS and EELS
AIP Conf. Proc. 817, 117–124 (2006)
https://doi.org/10.1063/1.2173540
Understanding the Impact of Surface Engineering, Structure, and Design on Electromigration through Monte Carlo Simulation and In‐Situ SEM Studies
Z. H. Gan; W. Shao; M. Y. Yan; A. V. Vairagar; T. Zaporozhets; M. A. Meyer; A. Krishnamoorthy; K. N. Tu; A. Gusak; E. Zschech; S. G. Mhaisalkar
AIP Conf. Proc. 817, 34–42 (2006)
https://doi.org/10.1063/1.2173529
Stress in Next Generation Interconnects
AIP Conf. Proc. 817, 157–163 (2006)
https://doi.org/10.1063/1.2173545
Electromigration in Gold and Single Crystalline Silver Nanowires
AIP Conf. Proc. 817, 65–70 (2006)
https://doi.org/10.1063/1.2173533
Local Deformation in Al Interconnects Measured During Thermal Cycling and Electromigration
AIP Conf. Proc. 817, 310–316 (2006)
https://doi.org/10.1063/1.2173564
Microstructure and Stress Aspects of Electromigration Modeling
AIP Conf. Proc. 817, 262–268 (2006)
https://doi.org/10.1063/1.2173558
Reliability Investigations on SnAg Bumps on Substrate Pads with Different Pad Finish
AIP Conf. Proc. 817, 360–366 (2006)
https://doi.org/10.1063/1.2173569
Edge Drift of Eutectic SnPb Lines: Electromigration of Flip Chip Solder
AIP Conf. Proc. 817, 339–347 (2006)
https://doi.org/10.1063/1.2173567
Organic‐Modified SiO2 Thin Film Coatings Obtained by the Sol‐Gel Method
AIP Conf. Proc. 817, 132–138 (2006)
https://doi.org/10.1063/1.2173542
Thermo‐Mechanical Modeling of Process Induced Stress: Layout Effect on Stress Voiding Phenomena
AIP Conf. Proc. 817, 254–261 (2006)
https://doi.org/10.1063/1.2173557
Fracture Behavior and Mechanical Properties of Porous Low‐k Materials
AIP Conf. Proc. 817, 125–131 (2006)
https://doi.org/10.1063/1.2173541
Application of Electron Tomography for Semiconductor Device Analysis
AIP Conf. Proc. 817, 223–228 (2006)
https://doi.org/10.1063/1.2173554
Theory for Electromigration Failure in Cu Conductors
AIP Conf. Proc. 817, 23–33 (2006)
https://doi.org/10.1063/1.2173528
Stresses in Copper Damascene Lines: In‐situ Measurements and Finite Element Analysis
AIP Conf. Proc. 817, 205–210 (2006)
https://doi.org/10.1063/1.2173551
Evaluation of Package Stress during Temperature Cycling using Metal Deformation Measurement and FEM Simulation
AIP Conf. Proc. 817, 139–144 (2006)
https://doi.org/10.1063/1.2173543