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Front Matter for Volume 788

AIP Conf. Proc. 788, frontmatter (2005) https://doi.org/10.1063/v788.frontmatter

View articletitled, Front Matter for Volume 788

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Back Matter for Volume 788

AIP Conf. Proc. 788, backmatter (2005) https://doi.org/10.1063/v788.backmatter

View articletitled, Back Matter for Volume 788

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The Relation Between Crystalline Phase, Electronic Structure, and Dielectric Properties in High‐K Gate Stacks

S. Sayan; M. Croft; N. V. Nguyen; T. Emge; J. Ehrstein; I. Levin; J. Suehle; R. A. Bartynski; E. Garfunkel

AIP Conf. Proc. 788, 92–101 (2005) https://doi.org/10.1063/1.2062944

Abstract

View articletitled, The Relation Between Crystalline Phase, Electronic Structure, and Dielectric Properties in High‐K Gate Stacks

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Electric Current Induced Thermomechanical Fatigue Testing of Interconnects

R. R. Keller; R. H. Geiss; Y. ‐W. Cheng; D. T. Read

AIP Conf. Proc. 788, 491–495 (2005) https://doi.org/10.1063/1.2063008

Abstract

View articletitled, Electric Current Induced Thermomechanical Fatigue Testing of Interconnects

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Nanoscale Characterization of Metal/Semiconductor Nanocontacts

C. Tivarus; K.‐B. Park; M. K. Hudait; S. A. Ringel; J. P. Pelz

AIP Conf. Proc. 788, 280–284 (2005) https://doi.org/10.1063/1.2062977

Abstract

View articletitled, Nanoscale Characterization of Metal/Semiconductor Nanocontacts

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Inelastic Electron Tunnelling Spectroscopy (IETS) of High‐k Dielectrics

T. P. Ma; Wei He; Miaomiao Wang

AIP Conf. Proc. 788, 73–78 (2005) https://doi.org/10.1063/1.2062941

Abstract

View articletitled, Inelastic Electron Tunnelling Spectroscopy (IETS) of High‐k Dielectrics

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Source/Drain Junctions and Contacts for 45 nm CMOS and Beyond

Mehmet C. Ozturk; Jing Liu

AIP Conf. Proc. 788, 222–231 (2005) https://doi.org/10.1063/1.2062966

Abstract

View articletitled, Source/Drain Junctions and Contacts for 45 nm CMOS and Beyond

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Advantages of Non‐Contact Measurements of Sheet Resistance Together with Leakage Current for USJ Characterization

V. N. Faifer; M. I. Current; T. M. H. Wong; V. V. Souchkov; T. Nguyen

AIP Conf. Proc. 788, 254–258 (2005) https://doi.org/10.1063/1.2062972

Abstract

View articletitled, Advantages of Non‐Contact Measurements of Sheet Resistance Together with Leakage Current for USJ Characterization

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Thermally Stable Mo_XSi_YN_Z as a Metal Gate Electrode for Advanced CMOS Devices

P. Zhao; J. Kim; M. J. Kim; B. E. Gnade; R. M. Wallace

AIP Conf. Proc. 788, 152–155 (2005) https://doi.org/10.1063/1.2062954

Abstract

View articletitled, Thermally Stable MoXSiYNZ as a Metal Gate Electrode for Advanced CMOS Devices

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Metrology Challenges for 45 nm Strained‐Si Devices

AIP Conf. Proc. 788, 214–221 (2005) https://doi.org/10.1063/1.2062965

Abstract

View articletitled, Metrology Challenges for 45 nm Strained‐Si Devices

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MOSFET Scaling Trends, Challenges, and Key Associated Metrology Issues Through the End of the Roadmap

Peter M. Zeitzoff; Howard R. Huff

AIP Conf. Proc. 788, 203–213 (2005) https://doi.org/10.1063/1.2062964

Abstract

View articletitled, MOSFET Scaling Trends, Challenges, and Key Associated Metrology Issues Through the End of the Roadmap

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Metrology (including Materials Characterization) for Nanoelectronics

Alain C. Diebold

AIP Conf. Proc. 788, 21–32 (2005) https://doi.org/10.1063/1.2062935

Abstract

View articletitled, Metrology (including Materials Characterization) for Nanoelectronics

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Starting Materials and Functional Layers for The 2005 International Technology Roadmap for Semiconductors: Challenges and Opportunities

Howard R. Huff; David Myers; Mike Walden; Larry Beckwith; Neil Weaver; George Celler; Bob Standley; Mayank T. Bulsara

AIP Conf. Proc. 788, 39–50 (2005) https://doi.org/10.1063/1.2062937

Abstract

View articletitled, Starting Materials and Functional Layers for The 2005 International Technology Roadmap for Semiconductors: Challenges and Opportunities

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Physical Characterization of Novel Metal Electrodes for Hf‐based Transistors

P. S. Lysaght; H.‐C. Wen; H. Alshareef; K. Choi; R. Harris; H. Luan; Y. Senzaki; G. Lian; M. Campin; M. Clark; B. Foran; P. Majhi; B.‐H. Lee

AIP Conf. Proc. 788, 136–140 (2005) https://doi.org/10.1063/1.2062951

Abstract

View articletitled, Physical Characterization of Novel Metal Electrodes for Hf‐based Transistors

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Recent Developments in Electrical Metrology for MOS Fabrication

Robert J. Hillard; Mark C. Benjamin; George A. Brown

AIP Conf. Proc. 788, 287–296 (2005) https://doi.org/10.1063/1.2062978

Abstract

View articletitled, Recent Developments in Electrical Metrology for MOS Fabrication

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Thermal Stability Studies of Advanced Gate Stack Structures on Si (100)

P. Sivasubramani; P. Zhao; M. J. Kim; B. E. Gnade; R. M. Wallace; L. F. Edge; D. G. Schlom; G. N. Parsons; V. Misra

AIP Conf. Proc. 788, 156–160 (2005) https://doi.org/10.1063/1.2062955

Abstract

View articletitled, Thermal Stability Studies of Advanced Gate Stack Structures on Si (100)

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Atomic and Electronic Structure Investigations of HfO₂/SiO₂/Si Gate Stacks Using Aberration‐Corrected STEM

K. van Benthem; S. N. Rashkeev; S. J. Pennycook

AIP Conf. Proc. 788, 79–84 (2005) https://doi.org/10.1063/1.2062942

Abstract

View articletitled, Atomic and Electronic Structure Investigations of HfO2/SiO2/Si Gate Stacks Using Aberration‐Corrected STEM

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Atomic Layer Deposition of High k Dielectric and Metal Gate Stacks for MOS Devices

Yoshihide Senzaki; Kisik Choi; Paul D. Kirsch; Prashant Majhi; Byoung Hun Lee

AIP Conf. Proc. 788, 69–72 (2005) https://doi.org/10.1063/1.2062940

Abstract

View articletitled, Atomic Layer Deposition of High k Dielectric and Metal Gate Stacks for MOS Devices

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HRTEM for Nano‐Electronic Materials Research

M. J. Kim; R. M. Wallace; B. E. Gnade

AIP Conf. Proc. 788, 558–564 (2005) https://doi.org/10.1063/1.2063018

Abstract

View articletitled, HRTEM for Nano‐Electronic Materials Research

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Gate Spacer Width Monitoring Study with Scatterometry Based on Spectroscopic Ellipsometry

V. Vachellerie; S. Kremer; A. Elazami; P. Morin; C. Julien; D. Duca; D. Guiheux; N. Bicais; S. Pokrant

AIP Conf. Proc. 788, 411–420 (2005) https://doi.org/10.1063/1.2062996

Abstract

View articletitled, Gate Spacer Width Monitoring Study with Scatterometry Based on Spectroscopic Ellipsometry

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Quantitative Carrier Concentration Profiling by Scanning Resonance Tunneling Spectroscopy

Leonid Bolotov; Toshiko Okui; Toshihiko Kanayama

AIP Conf. Proc. 788, 232–235 (2005) https://doi.org/10.1063/1.2062967

Abstract

View articletitled, Quantitative Carrier Concentration Profiling by Scanning Resonance Tunneling Spectroscopy

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Limits of Optical and X‐ray Metrology Applied to Thin Gate Dielectrics

Stefan Zollner; Yong Liang; Richard B. Gregory; Peter L. Fejes; David Theodore; Z. Yu; D. H. Triyoso; J. Curless; Clarence Tracy

AIP Conf. Proc. 788, 166–171 (2005) https://doi.org/10.1063/1.2062957

Abstract

View articletitled, Limits of Optical and X‐ray Metrology Applied to Thin Gate Dielectrics

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Determination of Ultra‐shallow Junction (USJ) Quality with an Elastic Material Probe (EM‐Probe)

Mark C. Benjamin; Robert J. Hillard; C. Win Ye

AIP Conf. Proc. 788, 245–248 (2005) https://doi.org/10.1063/1.2062970

Abstract

View articletitled, Determination of Ultra‐shallow Junction (USJ) Quality with an Elastic Material Probe (EM‐Probe)

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In‐Line Monitoring of Fab Processing Using X‐Ray Diffraction

Bruce Gittleman; Kris Kozaczek

AIP Conf. Proc. 788, 615–619 (2005) https://doi.org/10.1063/1.2063028

Abstract

View articletitled, In‐Line Monitoring of Fab Processing Using X‐Ray Diffraction

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Combined XRR and R_S Measurements of Nickel Silicide Films

J.‐P. Gonchond; C. Wyon; F. Cacho; G. Braeckelmann; G. Rolland; L. F. Tz. Kwakman; Y. Tsach; D. K. Agnihotri; J. P. Formica

AIP Conf. Proc. 788, 182–186 (2005) https://doi.org/10.1063/1.2062960

Abstract

View articletitled, Combined XRR and RS Measurements of Nickel Silicide Films

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The Use of Model Data to Characterize Depth Profile Generation from Angle Resolved XPS

P. Mack; B. J. McIntosh; R. G. White; J. Wolstenholme

AIP Conf. Proc. 788, 112–118 (2005) https://doi.org/10.1063/1.2062947

Abstract

View articletitled, The Use of Model Data to Characterize Depth Profile Generation from Angle Resolved XPS

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Depth‐Resolved Composition and Chemistry of Ultra‐Thin Films by Angle‐Resolved X‐Ray Photoelectron Spectroscopy

C. R. Brundle; G. Conti; H. Graoui; M. Foad; S. Hung; C. Wang; Y. S. Uritsky; P. Mack; J. Wolstenholme

AIP Conf. Proc. 788, 307–313 (2005) https://doi.org/10.1063/1.2062980

Abstract

View articletitled, Depth‐Resolved Composition and Chemistry of Ultra‐Thin Films by Angle‐Resolved X‐Ray Photoelectron Spectroscopy

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The Role of a Physical Analysis Laboratory in a 300 mm IC Development and Manufacturing Centre

L. F. Tz. Kwakman; N. Bicais‐Lepinay; S. Courtas; D. Delille; M. Juhel; C. Trouiller; C. Wyon; M. de la Bardonnie; F. Lorut; R. Ross

AIP Conf. Proc. 788, 51–62 (2005) https://doi.org/10.1063/1.2062938

Abstract

View articletitled, The Role of a Physical Analysis Laboratory in a 300 mm IC Development and Manufacturing Centre

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Surface Wave Metrology for Copper/Low‐k Interconnects

M. Gostein; A. A. Maznev; A. Mazurenko; J. Tower

AIP Conf. Proc. 788, 496–500 (2005) https://doi.org/10.1063/1.2063009

Abstract

View articletitled, Surface Wave Metrology for Copper/Low‐k Interconnects

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In‐line Quantitative Dose Metrology of Ultra‐thin Gate Oxide

Yunjung Jee; Kibeom Park; T. K. Kim; Han‐Soo Cho; T. M. Eom; Sungchan Cho; C. S. Jun; Taesung Kim

AIP Conf. Proc. 788, 147–151 (2005) https://doi.org/10.1063/1.2062953

Abstract

View articletitled, In‐line Quantitative Dose Metrology of Ultra‐thin Gate Oxide

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Photo‐Carrier‐Radiometry (PCR) Metrology for Semiconductor Manufacturing Inspection

J. A. Garcia; X. Guo; A. Mandelis; A. Simmons

AIP Conf. Proc. 788, 625–627 (2005) https://doi.org/10.1063/1.2063030

Abstract

View articletitled, Photo‐Carrier‐Radiometry (PCR) Metrology for Semiconductor Manufacturing Inspection

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Aggressive scaling of Cu/low k: impact on metrology

Karen Maex; Sywert H. Brongersma; Francesca Iacopi; Kris Vanstreels; Youssef Travaly; Mikhail Baklanov; Jan D’Haen; Gerald Beyer

AIP Conf. Proc. 788, 475–481 (2005) https://doi.org/10.1063/1.2063005

Abstract

View articletitled, Aggressive scaling of Cu/low k: impact on metrology

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A Case Study of Ion Implant In‐Line Statistical Process Control

Zhiyong Zhao; Kenneth Ramczyk; Darcy Hall; Linda Wang

AIP Conf. Proc. 788, 240–244 (2005) https://doi.org/10.1063/1.2062969

Abstract

View articletitled, A Case Study of Ion Implant In‐Line Statistical Process Control

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Particle Size Metrology: Comparison Between Aerosol Electrical Mobility and Laser Surface Light Scattering Techniques

Thomas A. Germer; George W. Mulholland

AIP Conf. Proc. 788, 579–583 (2005) https://doi.org/10.1063/1.2063021

Abstract

View articletitled, Particle Size Metrology: Comparison Between Aerosol Electrical Mobility and Laser Surface Light Scattering Techniques

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Atomic Layer Deposition — Process Models and Metrologies

D. R. Burgess, Jr.; J. E. Maslar; W. S. Hurst; E. F. Moore; W. A. Kimes; R. R. Fink; N. V. Nguyen

AIP Conf. Proc. 788, 141–146 (2005) https://doi.org/10.1063/1.2062952

Abstract

View articletitled, Atomic Layer Deposition — Process Models and Metrologies

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Accuracy and Repeatability of X‐Ray Metrology

D. Keith Bowen; David Joyce; Paul Ryan; Matthew Wormington

AIP Conf. Proc. 788, 604–609 (2005) https://doi.org/10.1063/1.2063026

Abstract

View articletitled, Accuracy and Repeatability of X‐Ray Metrology

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Recent Advances in Lithography and High Level Critical Dimension Metrology Needs for Lithography

Scott Hector

AIP Conf. Proc. 788, 359–368 (2005) https://doi.org/10.1063/1.2062989

Abstract

View articletitled, Recent Advances in Lithography and High Level Critical Dimension Metrology Needs for Lithography

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In‐Line Compositional and Thickness Metrology Using XPS for Ultra‐Thin Dielectric Films

J. Kelly Truman; Emir Gurer; C. Thomas Larson; David Reed

AIP Conf. Proc. 788, 102–106 (2005) https://doi.org/10.1063/1.2062945

Abstract

View articletitled, In‐Line Compositional and Thickness Metrology Using XPS for Ultra‐Thin Dielectric Films

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Metrology for Emerging Devices and Materials

Eric M. Vogel

AIP Conf. Proc. 788, 650–655 (2005) https://doi.org/10.1063/1.2063034

Abstract

View articletitled, Metrology for Emerging Devices and Materials

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Applying Semiconductor Technologies and Metrology Tools to Biomedical Research: Manipulation and Detection of Single Molecules

Andrew A. Berlin; Narayan Sundararajan; Tae‐Woong Koo

AIP Conf. Proc. 788, 641–649 (2005) https://doi.org/10.1063/1.2063033

Abstract

View articletitled, Applying Semiconductor Technologies and Metrology Tools to Biomedical Research: Manipulation and Detection of Single Molecules

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Electron Cyclotron Resonance Based Chemically Assisted Plasma Etching Of Silicon in CF₄/Ar Plasma

R. K. Bhardwaj; S. K. Angra; R. P. Bajpai; Madan Lal; Lalit M. Bharadwaj

AIP Conf. Proc. 788, 343–348 (2005) https://doi.org/10.1063/1.2062987

Abstract

View articletitled, Electron Cyclotron Resonance Based Chemically Assisted Plasma Etching Of Silicon in CF4/Ar Plasma

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Model‐Based Infrared Metrology for Advanced Technology Nodes and 300 mm Wafer Processing

Peter A. Rosenthal; Carlos Duran; Josh Tower; Alex Mazurenko; Ulrich Mantz; Peter Weidner; Alexander Kasic

AIP Conf. Proc. 788, 620–624 (2005) https://doi.org/10.1063/1.2063029

Abstract

View articletitled, Model‐Based Infrared Metrology for Advanced Technology Nodes and 300 mm Wafer Processing

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Benchmarking Four Point Bend Adhesion Testing: The Effect of Test Parameters On Adhesion Energy

Zhenjiang Cui; Girish Dixit; Li‐Qun Xia; Alex Demos; Bok H. Kim; Derek Witty; Hichem M’saad; Reinhold H. Dauskardt

AIP Conf. Proc. 788, 507–511 (2005) https://doi.org/10.1063/1.2063011

Abstract

View articletitled, Benchmarking Four Point Bend Adhesion Testing: The Effect of Test Parameters On Adhesion Energy

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Characterization and Control of Etch Processes Using Multiple Metrologies

Scott Bushman; Francis Celii; Scott Martin; Luis Tristan

AIP Conf. Proc. 788, 427–431 (2005) https://doi.org/10.1063/1.2062998

Abstract

View articletitled, Characterization and Control of Etch Processes Using Multiple Metrologies

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Novel Non‐contact Dielectric Constant Metrology for Low‐k Films

Vladimir V. Talanov; Robert L. Moreland; André Scherz; Andrew R. Schwartz

AIP Conf. Proc. 788, 512–516 (2005) https://doi.org/10.1063/1.2063012

Abstract

View articletitled, Novel Non‐contact Dielectric Constant Metrology for Low‐k Films

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ToF‐SIMS Applications in Microelectronics: Quantification of Organic Surface Contamination

C. Trouiller; T. Signamarcheix; M. Juhel; S. Petitdidier; H. Fontaine; M. Veillerot; L. F. Tz. Kwakman; C. Wyon

AIP Conf. Proc. 788, 584–588 (2005) https://doi.org/10.1063/1.2063022

Abstract

View articletitled, ToF‐SIMS Applications in Microelectronics: Quantification of Organic Surface Contamination

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Linewidth measurement from a stitched AFM image

Joseph Fu; Ronald Dixson; George Orji; Theodore Vorburger; Cattien V. Nguyen

AIP Conf. Proc. 788, 421–426 (2005) https://doi.org/10.1063/1.2062997

Abstract

View articletitled, Linewidth measurement from a stitched AFM image

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Ultraprecision CD Metrology for Sub‐100 nm Patterns by AFM

Satoshi Gonda; Kazuto Kinoshita; Hironori Noguchi; Tomizo Kurosawa; Hajime Koyanagi; Ken Murayama; Tsuneo Terasawa

AIP Conf. Proc. 788, 369–378 (2005) https://doi.org/10.1063/1.2062990

Abstract

View articletitled, Ultraprecision CD Metrology for Sub‐100 nm Patterns by AFM

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A Novel Approach to Inspect Abnormalities on the Deep Trench Capacitors in DRAM

H. W. Liu; E. Cheng; Y. M. Lin; S. Fan; K. Pan; J. L. Lue

AIP Conf. Proc. 788, 594–598 (2005) https://doi.org/10.1063/1.2063024

Abstract

View articletitled, A Novel Approach to Inspect Abnormalities on the Deep Trench Capacitors in DRAM

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Optical and X‐ray Metrology of Low‐k Materials: Porosity

Hugo Celio; Alain C. Diebold

AIP Conf. Proc. 788, 522–532 (2005) https://doi.org/10.1063/1.2063014

Abstract

View articletitled, Optical and X‐ray Metrology of Low‐k Materials: Porosity

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Near Surface Photo‐Voltage For Silicon Wafer Metrology

Edward Tsidilkovski; Kenneth Steeples

AIP Conf. Proc. 788, 589–593 (2005) https://doi.org/10.1063/1.2063023

Abstract

View articletitled, Near Surface Photo‐Voltage For Silicon Wafer Metrology

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Optical Flatness Metrology for 300 mm Silicon Wafers

Ulf Griesmann; Quandou Wang; Thomas D. Raymond

AIP Conf. Proc. 788, 599–603 (2005) https://doi.org/10.1063/1.2063025

Abstract

View articletitled, Optical Flatness Metrology for 300 mm Silicon Wafers

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Dopant Dose Metrology for Ultra‐Shallow Implanted Wafers using Electron‐Induced X‐Ray Spectrometry at Pattern‐Size Scale

Pierre‐F. Staub; Chrystel Hombourger

AIP Conf. Proc. 788, 236–239 (2005) https://doi.org/10.1063/1.2062968

Abstract

View articletitled, Dopant Dose Metrology for Ultra‐Shallow Implanted Wafers using Electron‐Induced X‐Ray Spectrometry at Pattern‐Size Scale

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Characterization of Threading Dislocations in Strained‐Si/SiGe Heterostructures Using Preferential Two‐Step Etching and MOS‐EBIC

J. Lu; A. Czerwinski; L. Kordas; W. Zhao; G. Rozgonyi

AIP Conf. Proc. 788, 633–637 (2005) https://doi.org/10.1063/1.2063032

Abstract

View articletitled, Characterization of Threading Dislocations in Strained‐Si/SiGe Heterostructures Using Preferential Two‐Step Etching and MOS‐EBIC

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X‐ray Photoelectron Spectroscopy of High‐κ Dielectrics

A. Mathew; K. Demirkan; C.‐G. Wang; G. D. Wilk; D. G. Watson; R. L. Opila

AIP Conf. Proc. 788, 85–91 (2005) https://doi.org/10.1063/1.2062943

Abstract

View articletitled, X‐ray Photoelectron Spectroscopy of High‐κ Dielectrics

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Cross Section and Critical Dimension Metrology in Dense High Aspect Ratio Patterns with CD‐SAXS

Ronald L. Jones; Eric K. Lin; Qinghuan Lin; Steven J. Weigand; Denis T. Keane; John P. Quintana; Wen‐li Wu

AIP Conf. Proc. 788, 403–406 (2005) https://doi.org/10.1063/1.2062994

Abstract

View articletitled, Cross Section and Critical Dimension Metrology in Dense High Aspect Ratio Patterns with CD‐SAXS

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Complete Imageless solution for overlay front‐end manufacturing

David Herisson; Virginie LeCacheux; Mathieu Touchet; Vincent Vachellerie; Laurent Lecarpentier; Franck Felten; Marco Polli

AIP Conf. Proc. 788, 451–454 (2005) https://doi.org/10.1063/1.2063002

Abstract

View articletitled, Complete Imageless solution for overlay front‐end manufacturing

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Effluent Stream Monitoring Of An Al₂O₃ Atomic Layer Deposition Process Using Optical Emission Spectroscopy

John P. Loo

AIP Conf. Proc. 788, 187–190 (2005) https://doi.org/10.1063/1.2062961

Abstract

View articletitled, Effluent Stream Monitoring Of An Al2O3 Atomic Layer Deposition Process Using Optical Emission Spectroscopy

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Development of Sample Planning for Wafer Defect Inspection

T. Nagai; A. Hamaguchi; Y. Yamazaki; M. Yamasaki; Y. Kaga

AIP Conf. Proc. 788, 628–632 (2005) https://doi.org/10.1063/1.2063031

Abstract

View articletitled, Development of Sample Planning for Wafer Defect Inspection

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A New NIST Database for the Simulation of Electron Spectra for Surface Analysis (SESSA): Application to Angle‐Resolved X‐ray Photoelectron Spectroscopy of HfO₂, ZrO₂, HfSiO₄, and ZrSiO₄ Films on Silicon

C. J. Powell; W. Smekal; W. S. M. Werner

AIP Conf. Proc. 788, 107–111 (2005) https://doi.org/10.1063/1.2062946

Abstract

View articletitled, A New NIST Database for the Simulation of Electron Spectra for Surface Analysis (SESSA): Application to Angle‐Resolved X‐ray Photoelectron Spectroscopy of HfO2, ZrO2, HfSiO4, and ZrSiO4 Films on Silicon

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Interferometric Metrology for Sub‐90‐nm Node Phase‐Shifting Photomasks

Andrew J. Merriam; James J. Jacob

AIP Conf. Proc. 788, 468–472 (2005) https://doi.org/10.1063/1.2063004

Abstract

View articletitled, Interferometric Metrology for Sub‐90‐nm Node Phase‐Shifting Photomasks

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Fiber‐optics Low‐coherence Integrated Metrology for In‐Situ Non‐contact Characterization of Novel Materials and Structures

Wojciech J. Walecki; Alexander Pravdivtsev; Kevin Lai; Manuel Santos, II; Georgy Mikhaylov; Mihail Mihaylov; Ann Koo

AIP Conf. Proc. 788, 338–342 (2005) https://doi.org/10.1063/1.2062986

Abstract

View articletitled, Fiber‐optics Low‐coherence Integrated Metrology for In‐Situ Non‐contact Characterization of Novel Materials and Structures

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Scatterometer Sensitivity for Statistical Process Control: Importance of Modeling for In‐direct Measurements

Brian Smith; Scott Bushman; Chris Baum

AIP Conf. Proc. 788, 437–441 (2005) https://doi.org/10.1063/1.2063000

Abstract

View articletitled, Scatterometer Sensitivity for Statistical Process Control: Importance of Modeling for In‐direct Measurements

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The Aberration Corrected SEM

David C. Joy

AIP Conf. Proc. 788, 535–542 (2005) https://doi.org/10.1063/1.2063015

Abstract

View articletitled, The Aberration Corrected SEM

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Development of Robust AFM Technique for Roughness and Morphology Characterization of Gate Stack Thin Films

Charles C. Wang; Pu Ye; Fu Li; Yi Ma; Yuri S. Uritsky

AIP Conf. Proc. 788, 194–199 (2005) https://doi.org/10.1063/1.2062963

Abstract

View articletitled, Development of Robust AFM Technique for Roughness and Morphology Characterization of Gate Stack Thin Films

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Optical Topography Measurement of Patterned Wafers

Xavier Colonna de Lega; Peter de Groot

AIP Conf. Proc. 788, 432–436 (2005) https://doi.org/10.1063/1.2062999

Abstract

View articletitled, Optical Topography Measurement of Patterned Wafers

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Complimentary Optical Metrology Techniques Used for Characterization of High‐K Gate Dielectrics

J. Price; A. C. Diebold; Ramon Carriles; Yongqiang An; Jinhee Kwon; M. C. Downer

AIP Conf. Proc. 788, 129–135 (2005) https://doi.org/10.1063/1.2062950

Abstract

View articletitled, Complimentary Optical Metrology Techniques Used for Characterization of High‐K Gate Dielectrics

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Optical Metrology Performance Analysis: Approach and Metrics

Leo Asinovski

AIP Conf. Proc. 788, 314–318 (2005) https://doi.org/10.1063/1.2062981

Abstract

View articletitled, Optical Metrology Performance Analysis: Approach and Metrics

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Spectroscopic Ellipsometry Applications in Advanced Lithography Research

R. A. Synowicki; Greg K. Pribil; James N. Hilfiker; Kevin Edwards

AIP Conf. Proc. 788, 324–328 (2005) https://doi.org/10.1063/1.2062983

Abstract

View articletitled, Spectroscopic Ellipsometry Applications in Advanced Lithography Research

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Nondestructive Thickness Determination of High‐k Dielectric HfO₂ and Interfacial Oxide by Spectroscopic Ellipsometry

Guanghua Song; Xiaolong Yang; Meng Tao; Jianyu Huang

AIP Conf. Proc. 788, 177–181 (2005) https://doi.org/10.1063/1.2062959

Abstract

View articletitled, Nondestructive Thickness Determination of High‐k Dielectric HfO2 and Interfacial Oxide by Spectroscopic Ellipsometry

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Controlling Environmental Effects on Optical Measurements of Gate Dielectric Thickness

Elisa U.; Jonathan VanBuskirk; Heath Pois; Vladimir Zhukov; Stephen Morris; Sue Kelso; Chris Collings; Jim McWhirter; Thierry Nguyen; Saroja Ramamurthi

AIP Conf. Proc. 788, 119–123 (2005) https://doi.org/10.1063/1.2062948

Abstract

View articletitled, Controlling Environmental Effects on Optical Measurements of Gate Dielectric Thickness

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Techniques for Improving SIMS Depth Resolution: $C_{60}^{+}$ Primary Ions and Backside Depth Profile Analysis

Eric Windsor; Greg Gillen; David Bright; Peter Chi; Albert Fahey; James Batteas

AIP Conf. Proc. 788, 349–355 (2005) https://doi.org/10.1063/1.2062988

Abstract

View articletitled, Techniques for Improving SIMS Depth Resolution: <math xmlns="http://www.w3.org/1998/Math/MathML"><msubsup xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>60</mn></mrow><mrow><mi>+</mi></mrow></msubsup></math> Primary Ions and Backside Depth Profile Analysis

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Mask Inspection Technology for 65nm (hp) Technology Node and Beyond

Toru Tojo; Ryoich Hirano; Hiromu Inoue; Shinichi Imai; Nobuyuki Yoshioka; Katsumi Ohira; Dong‐Hoon Chung; Tsuneo Terasawa

AIP Conf. Proc. 788, 457–467 (2005) https://doi.org/10.1063/1.2063003

Abstract

View articletitled, Mask Inspection Technology for 65nm (hp) Technology Node and Beyond

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In‐Line Control and Rapid Process Development of Nitrided Gate Oxides

Duncan Rogers; Tapani Laaksonen; Ajith Varghese; Christian Otten; Mike Kasner; Husam Alshareef; Richard Kuan; Malcolm Bevan

AIP Conf. Proc. 788, 172–176 (2005) https://doi.org/10.1063/1.2062958

Abstract

View articletitled, In‐Line Control and Rapid Process Development of Nitrided Gate Oxides

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Multi‐Technology Measurements of Nitrided Oxide and High‐K Gate Stacks

Stephen J. Morris; Eileen Clifford; Osman Sorkhabi; Youxian Wen; Heath Pois

AIP Conf. Proc. 788, 124–128 (2005) https://doi.org/10.1063/1.2062949

Abstract

View articletitled, Multi‐Technology Measurements of Nitrided Oxide and High‐K Gate Stacks

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Characterizing Via Bottom Integrity in Cu/Low‐κ Processes

Cecilia Martner; Edgar Genio; Peter Borden; Jianshe Tang; Michael Wood; Philip Fulmer

AIP Conf. Proc. 788, 488–490 (2005) https://doi.org/10.1063/1.2063007

Abstract

View articletitled, Characterizing Via Bottom Integrity in Cu/Low‐κ Processes

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Challenges of Smaller Particle Detection on Both Bulk‐Silicon and SOI Wafers

Takeshi Hattori

AIP Conf. Proc. 788, 33–38 (2005) https://doi.org/10.1063/1.2062936

Abstract

View articletitled, Challenges of Smaller Particle Detection on Both Bulk‐Silicon and SOI Wafers

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Characterization of Atomic Layer Deposition using X‐Ray Reflectometry

Donald Windover; Nicholas Armstrong; James P. Cline; P. Y. Hung; Alain Diebold

AIP Conf. Proc. 788, 161–165 (2005) https://doi.org/10.1063/1.2062956

Abstract

View articletitled, Characterization of Atomic Layer Deposition using X‐Ray Reflectometry

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Practical Applications of XRR‐XRF Metrology Tool

Emmanuel Nolot; André Michallet

AIP Conf. Proc. 788, 329–332 (2005) https://doi.org/10.1063/1.2062984

Abstract

View articletitled, Practical Applications of XRR‐XRF Metrology Tool

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Interface Trap Characterization of Alternate Gate Dielectrics With Elastic Gate MOS Metrology

S. H. Bae; R. J. Hillard; C. S. Olsen; M. C. Benjamin; S. Thirupapuliyur; N. Ho; P. A. Kraus

AIP Conf. Proc. 788, 191–193 (2005) https://doi.org/10.1063/1.2062962

Abstract

View articletitled, Interface Trap Characterization of Alternate Gate Dielectrics With Elastic Gate MOS Metrology

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Overview Of Scatterometry Applications In High Volume Silicon Manufacturing

Christopher Raymond

AIP Conf. Proc. 788, 394–402 (2005) https://doi.org/10.1063/1.2062993

Abstract

View articletitled, Overview Of Scatterometry Applications In High Volume Silicon Manufacturing

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DB FIB For In‐Line Process Control

Harald Bloeß; Ulrich Mantz; Craig Henry; Ralf Lehmann; Doug Hahn

AIP Conf. Proc. 788, 543–546 (2005) https://doi.org/10.1063/1.2063016

Abstract

View articletitled, DB FIB For In‐Line Process Control

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IR Spectroscopic Characterization of the Buried Metal Interface of Metal‐Molecule‐Silicon Vertical Diodes

Christina A. Hacker; Curt A. Richter; Lee J. Richter

AIP Conf. Proc. 788, 610–614 (2005) https://doi.org/10.1063/1.2063027

Abstract

View articletitled, IR Spectroscopic Characterization of the Buried Metal Interface of Metal‐Molecule‐Silicon Vertical Diodes

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Self‐calibrating Approach for Non‐Contact Electrical Doping Profiling

D. Marinskiy; P. Edelman; C. Almeida; G. Polisski; J. D’Amico; M. Wilson; L. Jastrzebski; J. Lagowski

AIP Conf. Proc. 788, 249–253 (2005) https://doi.org/10.1063/1.2062971

Abstract

View articletitled, Self‐calibrating Approach for Non‐Contact Electrical Doping Profiling

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Growth And Characterization of Ultrathin Metal Films For ULSI Interconnects

J. Shin; D. Gay; Y.‐M. Sun; J. M. White; J. G. Ekerdt

AIP Conf. Proc. 788, 482–487 (2005) https://doi.org/10.1063/1.2063006

Abstract

View articletitled, Growth And Characterization of Ultrathin Metal Films For ULSI Interconnects

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In‐Line Detection and Measurement of Molecular Contamination in Semiconductor Process Solutions

Jason Wang; Michael West; Ye Han; Robert C. McDonald; Wenjing Yang; Bob Ormond; Harmesh Saini

AIP Conf. Proc. 788, 297–306 (2005) https://doi.org/10.1063/1.2062979

Abstract

View articletitled, In‐Line Detection and Measurement of Molecular Contamination in Semiconductor Process Solutions

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2‐D Temperature Mapping in Fluorocarbon Plasmas

Kristen L. Steffens; Mark A. Sobolewski

AIP Conf. Proc. 788, 333–337 (2005) https://doi.org/10.1063/1.2062985

Abstract

View articletitled, 2‐D Temperature Mapping in Fluorocarbon Plasmas

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Calculation of Pore Size Distributions in Low‐k Films

Peter I. Ravikovitch; Aleksey Vishnyakov; Alexander V. Neimark; Manuela R. Carrott; Patrícia A. Russo; Peter J. Carrott

AIP Conf. Proc. 788, 517–521 (2005) https://doi.org/10.1063/1.2063013

Abstract

View articletitled, Calculation of Pore Size Distributions in Low‐k Films

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Synthesis of Cubic Boron Nitride Thin Films on Silicon Substrate Using Electron Beam Evaporation

S. Nasrazadani; P. Vemuri

AIP Conf. Proc. 788, 501–506 (2005) https://doi.org/10.1063/1.2063010

Abstract

View articletitled, Synthesis of Cubic Boron Nitride Thin Films on Silicon Substrate Using Electron Beam Evaporation

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Noninvasive Monitoring of Ion Energy in an Inductively Coupled Plasma Reactor

Mark A. Sobolewski

AIP Conf. Proc. 788, 319–323 (2005) https://doi.org/10.1063/1.2062982

Abstract

View articletitled, Noninvasive Monitoring of Ion Energy in an Inductively Coupled Plasma Reactor

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Quantification of Shallow‐junction Dopant Loss during CMOS Process

G. H. Buh; T. Park; Y. Jee; S. J. Hong; C. Ryoo; J. Yoo; J. W. Lee; G. H. Yon; C. S. Jun; Y. G. Shin; U.‐In Chung; J. T. Moon

AIP Conf. Proc. 788, 275–279 (2005) https://doi.org/10.1063/1.2062976

Abstract

View articletitled, Quantification of Shallow‐junction Dopant Loss during CMOS Process

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The Limits of CD Metrology

Bryan J. Rice; Heidi Cao; Michael Grumski; Jeanette Roberts

AIP Conf. Proc. 788, 379–385 (2005) https://doi.org/10.1063/1.2062991

Abstract

View articletitled, The Limits of CD Metrology

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Quantitative Analysis of 1D Ultra‐Shallow Junctions Using Off‐Axis Electron Holography

M. R. McCartney; M. G. Han; Jing Li; Peter Fejes; Qianghua Xie; Gordon Tam; Sandeep Bagchi; Bill Taylor; James Conner

AIP Conf. Proc. 788, 565–568 (2005) https://doi.org/10.1063/1.2063019

Abstract

View articletitled, Quantitative Analysis of 1D Ultra‐Shallow Junctions Using Off‐Axis Electron Holography

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High Resolution Profiling Using Ion Scattering and Resonant Nuclear Reactions

R. P. Pezzi; R. M. Wallace; M. Copel; I. J. R. Baumvol

AIP Conf. Proc. 788, 571–578 (2005) https://doi.org/10.1063/1.2063020

Abstract

View articletitled, High Resolution Profiling Using Ion Scattering and Resonant Nuclear Reactions

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SCM and SSRM Study on Boron Penetration and SSR Channel Formation in Sub‐100nm MOSFETs

Y. G. Wang; H. Bu; L. Adam; J. Wu; Y. Chen; K. Liu; S. Zhao; S. Tang; D. B. Scott; C. Machala; T. Rost; H. Edwards

AIP Conf. Proc. 788, 270–274 (2005) https://doi.org/10.1063/1.2062975

Abstract

View articletitled, SCM and SSRM Study on Boron Penetration and SSR Channel Formation in Sub‐100nm MOSFETs

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On the spatial resolution of scanning spreading resistance microscopy : experimental assessment and electro‐mechanical modeling

P. Eyben; D. Degryse; W. Vandervorst

AIP Conf. Proc. 788, 264–269 (2005) https://doi.org/10.1063/1.2062974

Abstract

View articletitled, On the spatial resolution of scanning spreading resistance microscopy : experimental assessment and electro‐mechanical modeling

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The Opportunities and Challenges of Bringing New Metrology Equipment to Market

David S. Perloff

AIP Conf. Proc. 788, 11–20 (2005) https://doi.org/10.1063/1.2062934

Abstract

View articletitled, The Opportunities and Challenges of Bringing New Metrology Equipment to Market

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Non‐destructive Characterizing of Lateral Doping Effects

P. Borden; E. Budiarto; S. Felch; H. Graoui

AIP Conf. Proc. 788, 259–263 (2005) https://doi.org/10.1063/1.2062973

Abstract

View articletitled, Non‐destructive Characterizing of Lateral Doping Effects

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Design For Manufacture In Overlay Metrology

Mike Adel

AIP Conf. Proc. 788, 445–450 (2005) https://doi.org/10.1063/1.2063001

Abstract

View articletitled, Design For Manufacture In Overlay Metrology

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Advanced EELS Applications in Process Development

Heiko Stegmann; Ehrenfried Zschech

AIP Conf. Proc. 788, 549–557 (2005) https://doi.org/10.1063/1.2063017

Abstract

View articletitled, Advanced EELS Applications in Process Development

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Opportunities and Risks in Semiconductor Metrology

Peter Borden

AIP Conf. Proc. 788, 63–66 (2005) https://doi.org/10.1063/1.2062939

Abstract

View articletitled, Opportunities and Risks in Semiconductor Metrology

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Issues in Line Edge and Linewidth Roughness Metrology

J. S. Villarrubia

AIP Conf. Proc. 788, 386–393 (2005) https://doi.org/10.1063/1.2062992

Abstract

View articletitled, Issues in Line Edge and Linewidth Roughness Metrology

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Feasibility Study for High Energy SEM‐Based Reference Measurement System for Litho Metrology

Michael Bishop; David Joy

AIP Conf. Proc. 788, 407–410 (2005) https://doi.org/10.1063/1.2062995

Abstract

View articletitled, Feasibility Study for High Energy SEM‐Based Reference Measurement System for Litho Metrology

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Collaboration: The Semiconductor Industry’s Path To Survival And Growth

Michael R. Polcari

AIP Conf. Proc. 788, 3–10 (2005) https://doi.org/10.1063/1.2062933

Abstract

View articletitled, Collaboration: The Semiconductor Industry’s Path To Survival And Growth

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