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Volume 73, Issue 1
June 1981
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All Issues
Optical emission studies of reactive species in plasma deposition
F. J. Kampas; R. W. Griffith
AIP Conf. Proc. 73, 1–5 (1981) https://doi.org/10.1063/1.33076
View articletitled, Optical emission studies of reactive species in plasma deposition
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Deposition and doping of a‐Si:H from Si2H6 plasmas
B. A. Scott; M. H. Brodsky; D. C. Green; R. M. Plecenik; E. E. Simonyi; R. Serino
AIP Conf. Proc. 73, 6–9 (1981) https://doi.org/10.1063/1.33027
View articletitled, Deposition and doping of a‐Si:H from Si<sub>2</sub>H<sub>6</sub> plasmas
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New insights on growth mechanism of a‐Si:H from optical emission spectroscopy
M. Hirose; T. Hamasaki; Y. Mishima; H. Kurata; Y. Osaka
AIP Conf. Proc. 73, 10–14 (1981) https://doi.org/10.1063/1.33083
View articletitled, New insights on growth mechanism of a‐Si:H from optical emission spectroscopy
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’’F‐etched a‐SI films’’
Vikram L. Dalal; Charles M. Fortmann; Erten Eser
AIP Conf. Proc. 73, 15–19 (1981) https://doi.org/10.1063/1.33067
View articletitled, ’’F‐etched a‐SI films’’
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Experimental evidence for a kinetic model of hydrogen incorporation into sputtered a‐Si films
T. D. Moustakas; T. Tiedje; W. A. Lanford
AIP Conf. Proc. 73, 20–24 (1981) https://doi.org/10.1063/1.33079
View articletitled, Experimental evidence for a kinetic model of hydrogen incorporation into sputtered a‐Si films
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Comparison of a‐Si:H produced by rf sputtering and plasma decomposition methods
G. Moddel; J. Blake; R. W. Collins; P. Viktorovitch; D. K. Paul; B. von Roedern; William Paul
AIP Conf. Proc. 73, 25–30 (1981) https://doi.org/10.1063/1.33042
View articletitled, Comparison of a‐Si:H produced by rf sputtering and plasma decomposition methods
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Growth characterization of a‐Si:H films by in situ ellipsometry in a silane multipole plasma
B. Drevillon; J. Huc; J. Perrin; A. Lloret; G. de Rosny; J. P. M. Schmitt
AIP Conf. Proc. 73, 31–35 (1981) https://doi.org/10.1063/1.33056
View articletitled, Growth characterization of a‐Si:H films by in situ ellipsometry in a silane multipole plasma
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Influence of electric and magnetic d.c. fields on the electronic transport properties of a‐Si:H alloys produced by r.f.glow discharge
R. Martins; A. G. Dias; I. Guimarães
AIP Conf. Proc. 73, 36–41 (1981) https://doi.org/10.1063/1.33060
View articletitled, Influence of electric and magnetic d.c. fields on the electronic transport properties of a‐Si:H alloys produced by r.f.glow discharge
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The role of RF substrate bias on the growth and properties of plasma deposited a‐Si:H
M. P. Rosenblum; M. J. Thompson; R. A. Street
AIP Conf. Proc. 73, 42–46 (1981) https://doi.org/10.1063/1.33061
View articletitled, The role of RF substrate bias on the growth and properties of plasma deposited a‐Si:H
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The growth and properties of bias‐sputtered a‐Si‐H
D. P. Turner; I. P. Thomas; J. Allison; M. J. Thompson; A. J. Rhodes; I. G. Austin; T. M. Searle
AIP Conf. Proc. 73, 47–51 (1981) https://doi.org/10.1063/1.33062
View articletitled, The growth and properties of bias‐sputtered a‐Si‐H
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Film‐plasma interactions in triode‐sputtered a‐Si:H
P. M. Martin; W. T. Pawlewicz
AIP Conf. Proc. 73, 52 (1981) https://doi.org/10.1063/1.33033
View articletitled, Film‐plasma interactions in triode‐sputtered a‐Si:H
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Bombardment effects in a‐Si:H sputtered films
R. C. Ross; R. Messier
AIP Conf. Proc. 73, 53–57 (1981) https://doi.org/10.1063/1.33023
View articletitled, Bombardment effects in a‐Si:H sputtered films
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Properties of amorphous silicon prepared at different temperatures by pyrolytic decomposition of silane
P. Hey; N. Raouf; D. C. Booth; B. O. Seraphin
AIP Conf. Proc. 73, 58–62 (1981) https://doi.org/10.1063/1.33024
View articletitled, Properties of amorphous silicon prepared at different temperatures by pyrolytic decomposition of silane
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Preparation of amorphous silicon films by CVD of higher order silanes SinH2n+2 for n 2
S. C. Gauau; B. R. Weinberger; M. Akhtar; Z. Kiss; A. G. MacDiarmid
AIP Conf. Proc. 73, 63–66 (1981) https://doi.org/10.1063/1.33025
View articletitled, Preparation of amorphous silicon films by CVD of higher order silanes Si<sub>n</sub>H<sub>2n+2</sub> for n 2
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NMR studies of sputtered and glow discharge deposited a‐Si :H
W. E. Carlos; P. C. Taylor; S. Oguz; W. Paul
AIP Conf. Proc. 73, 67–72 (1981) https://doi.org/10.1063/1.33026
View articletitled, NMR studies of sputtered and glow discharge deposited a‐Si :H
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Nuclear spin‐lattice relaxation by diffusion in amorphous Si :H
B. Movaghar; L. Schweitzer
AIP Conf. Proc. 73, 73–77 (1981) https://doi.org/10.1063/1.33028
View articletitled, Nuclear spin‐lattice relaxation by diffusion in amorphous Si :H
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Proton magnetic resonance studies of plasma deposited a‐Si:H films
Jeffrey A. Reimer; John C. Knights
AIP Conf. Proc. 73, 78–82 (1981) https://doi.org/10.1063/1.33029
View articletitled, Proton magnetic resonance studies of plasma deposited a‐Si:H films
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Characterization of the protonic distribution and environment in amorphous silicon‐hydrogen alloys using proton NMR and ESR
F. R. Jeffrey; M. E. Lowry; M. L. S. Garcia; R. G. Barnes; D. E. Torgeson
AIP Conf. Proc. 73, 83–88 (1981) https://doi.org/10.1063/1.33030
View articletitled, Characterization of the protonic distribution and environment in amorphous silicon‐hydrogen alloys using proton NMR and ESR
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Relation between silicon‐hydrogen complexes and microvoids in amorphous silicon films from IR absorption
D. E. Soule; G. T. Reedy; E. M. Peterson; J. A. McMillan
AIP Conf. Proc. 73, 89–94 (1981) https://doi.org/10.1063/1.33031
View articletitled, Relation between silicon‐hydrogen complexes and microvoids in amorphous silicon films from IR absorption
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Structural inhomogeneities and the interpretation of IR absorption for a‐Si:H films
G. Lucovsky; R. Rudder
AIP Conf. Proc. 73, 95–99 (1981) https://doi.org/10.1063/1.33032
View articletitled, Structural inhomogeneities and the interpretation of IR absorption for a‐Si:H films
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Chemical bonding effects on the local vibrations in fluorinated and hydrogenated amorphous silicon
G. Lucovsky
AIP Conf. Proc. 73, 100–105 (1981) https://doi.org/10.1063/1.33081
View articletitled, Chemical bonding effects on the local vibrations in fluorinated and hydrogenated amorphous silicon
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Behavior of fluorine atoms in a‐Si:H:F alloy investigated by gas evolution
S. Usui; A. Sawada; M. Kikuchi
AIP Conf. Proc. 73, 106–110 (1981) https://doi.org/10.1063/1.33082
View articletitled, Behavior of fluorine atoms in a‐Si:H:F alloy investigated by gas evolution
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On the structure of fluorine defects in amorphous and crystalline silicon studied by hyperfine interaction and channeling methods
K. Bonde Nielsen; S. Damgaard; J. W. Peterson; W. Schou; I. Stensgaard; G. Weyer
AIP Conf. Proc. 73, 111–116 (1981) https://doi.org/10.1063/1.33084
View articletitled, On the structure of fluorine defects in amorphous and crystalline silicon studied by hyperfine interaction and channeling methods
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Small angle scattering study of 2 micron hydrogenated amorphous silicon films deposited at 130 °C and 250 °C
P. D’Antonio; J. H. Konnert
AIP Conf. Proc. 73, 117–119 (1981) https://doi.org/10.1063/1.33085
View articletitled, Small angle scattering study of 2 micron hydrogenated amorphous silicon films deposited at 130 °C and 250 °C
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Physicochemical effect of doping in sputtered a‐Si : H
A. Deneuville; J. C. Bruyère; M. Toulemonde; J. J. Grob; P. Siffert
AIP Conf. Proc. 73, 120–124 (1981) https://doi.org/10.1063/1.33086
View articletitled, Physicochemical effect of doping in sputtered a‐Si : H
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Atomic structure and self‐consistent electronic structure of periodic models of amorphous hydrogenated silicon
C.‐Y. Fong; Lester Guttman
AIP Conf. Proc. 73, 125–129 (1981) https://doi.org/10.1063/1.33087
View articletitled, Atomic structure and self‐consistent electronic structure of periodic models of amorphous hydrogenated silicon
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Electronic densities of states in α‐Si:H
D. A. Papaconstantopoulos; E. N. Economou
AIP Conf. Proc. 73, 130–135 (1981) https://doi.org/10.1063/1.33088
View articletitled, Electronic densities of states in α‐Si:H
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Electronic structure as a probe of bonding in hydrogenated amorphous silicon
Douglas C. Allan; J. D. Joannopoulos
AIP Conf. Proc. 73, 136–140 (1981) https://doi.org/10.1063/1.33089
View articletitled, Electronic structure as a probe of bonding in hydrogenated amorphous silicon
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Toward a theory of impurities in amorphous semiconductors
John D. Dow; Otto F. Sankey
AIP Conf. Proc. 73, 141–145 (1981) https://doi.org/10.1063/1.33063
View articletitled, Toward a theory of impurities in amorphous semiconductors
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Electronic structure of amorphous silicon alloys
David Adler; Robert C. Frye
AIP Conf. Proc. 73, 146–150 (1981) https://doi.org/10.1063/1.33064
View articletitled, Electronic structure of amorphous silicon alloys
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Electronic states of an isolated phosphorus atom in an amorphous silicon matrix
W. Y. Ching; Chun C. Lin
AIP Conf. Proc. 73, 151–155 (1981) https://doi.org/10.1063/1.33065
View articletitled, Electronic states of an isolated phosphorus atom in an amorphous silicon matrix
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Hole conductivity through neighboring Si‐H bonds in hydrogenated silicon
D. P. DiVincenzo; J. Bernholc; M. H. Brodsky; N. O. Lipari; S. T. Pantelides
AIP Conf. Proc. 73, 156–160 (1981) https://doi.org/10.1063/1.33066
View articletitled, Hole conductivity through neighboring Si‐H bonds in hydrogenated silicon
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Bonding geometries of fluorine in a–Si:F a photoemission study
L. Ley; K. J. Gruntz; R. L. Johnson
AIP Conf. Proc. 73, 161–165 (1981) https://doi.org/10.1063/1.33068
View articletitled, Bonding geometries of fluorine in a–Si:F a photoemission study
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Autocompensation in doped amorphous silicon
D. K. Biegelsen; R. A. Street; J. C. Knights
AIP Conf. Proc. 73, 166–170 (1981) https://doi.org/10.1063/1.33069
View articletitled, Autocompensation in doped amorphous silicon
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ESR and IR studies on sputtered amorphous Si–C–H, Si–Ge–H and Ge–C–H
Tatsuo Shimizu; Minoru Kumeda; Yoshinari Kiriyama
AIP Conf. Proc. 73, 171–175 (1981) https://doi.org/10.1063/1.33070
View articletitled, ESR and IR studies on sputtered amorphous Si–C–H, Si–Ge–H and Ge–C–H
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Changes in the field effect density of states of a–Si:H with annealing
Nancy B. Goodman; H. Fritzsche
AIP Conf. Proc. 73, 176–180 (1981) https://doi.org/10.1063/1.33071
View articletitled, Changes in the field effect density of states of a–Si:H with annealing
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Analysis of conductivity and thermoelectric power measurements on amorphous semiconductors
Paul Nielsen
AIP Conf. Proc. 73, 181–185 (1981) https://doi.org/10.1063/1.33072
View articletitled, Analysis of conductivity and thermoelectric power measurements on amorphous semiconductors
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Evidence for an additional conductivity path in P–Doped a–Si:H from Schottky barrier height and photoconductivity temperature dependence measurements
P. Viktorovitch; G. Moddel; William Paul
AIP Conf. Proc. 73, 186–191 (1981) https://doi.org/10.1063/1.33073
View articletitled, Evidence for an additional conductivity path in P–Doped a–Si:H from Schottky barrier height and photoconductivity temperature dependence measurements
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High–conductive and wide optical–gap boron–doped Si:H films
A. Matsuda; M. Matsumura; K. Nakagawa; T. Imura; H. Yamamoto; S. Yamasaki; H. Okushi; S. Iizima; K. Tanaka
AIP Conf. Proc. 73, 192–196 (1981) https://doi.org/10.1063/1.33074
View articletitled, High–conductive and wide optical–gap boron–doped Si:H films
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A physical interpretation of dispersive transport in amorphous silicon hydride
T. Tiedje; A. Rose; J. M. Cebulka
AIP Conf. Proc. 73, 197–201 (1981) https://doi.org/10.1063/1.33075
View articletitled, A physical interpretation of dispersive transport in amorphous silicon hydride
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Anomalous carrier drift in a‐Si alloys
T. Datta; M. Silver
AIP Conf. Proc. 73, 202–206 (1981) https://doi.org/10.1063/1.33077
View articletitled, Anomalous carrier drift in a‐Si alloys
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Time of filght studies in sputtered a–Si:H
P. B. Kirby; William Paul; P. Jacques; J. L. Brebner
AIP Conf. Proc. 73, 207–211 (1981) https://doi.org/10.1063/1.33078
View articletitled, Time of filght studies in sputtered a–Si:H
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Electronic defect levels in plasma‐deposited amorphous silicon
N. M. Johnson; M. J. Thompson; R. A. Street
AIP Conf. Proc. 73, 212–216 (1981) https://doi.org/10.1063/1.33080
View articletitled, Electronic defect levels in plasma‐deposited amorphous silicon
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Detailed calculation of the density of gap states obtained by DLTS measurements of doped a–Si:H Schottky barrier diodes
J. D. Cohen; D. V. Lang; J. P. Harbison
AIP Conf. Proc. 73, 217–221 (1981) https://doi.org/10.1063/1.33034
View articletitled, Detailed calculation of the density of gap states obtained by DLTS measurements of doped a–Si:H Schottky barrier diodes
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Measurement of free carrier mobility in amorphous silicon using traveling waves
D. Janes; S. Datta; R. Adler; B. J. Hunsinger
AIP Conf. Proc. 73, 222–226 (1981) https://doi.org/10.1063/1.33090
View articletitled, Measurement of free carrier mobility in amorphous silicon using traveling waves
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Study of gap states in a–Si:H alloys by measurements of photoconductivity and spectral response of MIS solar cells
P. E. Vanier; A. E. Delahoy; R. W. Griffith
AIP Conf. Proc. 73, 227–232 (1981) https://doi.org/10.1063/1.33035
View articletitled, Study of gap states in a–Si:H alloys by measurements of photoconductivity and spectral response of MIS solar cells
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Spin polarization effects in the photoconductivity of a‐Si:H
E. A. Schiff
AIP Conf. Proc. 73, 233–237 (1981) https://doi.org/10.1063/1.33036
View articletitled, Spin polarization effects in the photoconductivity of a‐Si:H
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Infrared quenching of photoconductivity: Recombination in a‐Si:H
P. D. Persans; H. Fritzsche
AIP Conf. Proc. 73, 238–242 (1981) https://doi.org/10.1063/1.33037
View articletitled, Infrared quenching of photoconductivity: Recombination in a‐Si:H
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Optical picosecond studies of carrier thermalzation in amorphous silicon
Z. Vardeny; J. Tauc; C. J. Fang
AIP Conf. Proc. 73, 243–247 (1981) https://doi.org/10.1063/1.33038
View articletitled, Optical picosecond studies of carrier thermalzation in amorphous silicon
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Picosecond time‐resolved photoconductivity in amorphous silicon
A. M. Johnson; D. H. Auston; P. R. Smith; J. C. Bean; J. P. Harbison; A. C. Adams
AIP Conf. Proc. 73, 248–252 (1981) https://doi.org/10.1063/1.33039
View articletitled, Picosecond time‐resolved photoconductivity in amorphous silicon
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Relaxation of photoinduced sub‐bandgap absorption in a‐Si:H
S. Ray; Z. Vardeny; J. Tauc; T. Moustakas; B. Abeles
AIP Conf. Proc. 73, 253–257 (1981) https://doi.org/10.1063/1.33040
View articletitled, Relaxation of photoinduced sub‐bandgap absorption in a‐Si:H
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Photoacoustic spectra of P‐doped and undoped GD a‐Si:H films
S. Yamasaki; K. Nakagawa; H. Yamamoto; A. Matsuda; H. Okushi; K. Tanaka
AIP Conf. Proc. 73, 258–262 (1981) https://doi.org/10.1063/1.33041
View articletitled, Photoacoustic spectra of P‐doped and undoped GD a‐Si:H films
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Direct measurement of the absorption tail of a‐Si:H in the range of 2.1 eV ≳hν≳0.6 eV
Warren B. Jackson; Nabil M. Amer
AIP Conf. Proc. 73, 263–267 (1981) https://doi.org/10.1063/1.33043
View articletitled, Direct measurement of the absorption tail of a‐Si:H in the range of 2.1 eV ≳hν≳0.6 eV
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Influence of compression on radiative recombination in a‐Si:H
Bernard A. Weinstein
AIP Conf. Proc. 73, 268–272 (1981) https://doi.org/10.1063/1.33044
View articletitled, Influence of compression on radiative recombination in a‐Si:H
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Super‐bandgap radiation in a‐Si
B. A. Wilson
AIP Conf. Proc. 73, 273–277 (1981) https://doi.org/10.1063/1.33045
View articletitled, Super‐bandgap radiation in a‐Si
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Photoluminescence excitation spectroscopy of hydrogenated amorphous silicon
S. G. Bishop; U. Strom; P. C. Taylor; William Paul
AIP Conf. Proc. 73, 278–282 (1981) https://doi.org/10.1063/1.33046
View articletitled, Photoluminescence excitation spectroscopy of hydrogenated amorphous silicon
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Geminate and non−geminate recombination in a–Si:H
J. Mort; I. Chen; S. Grammatica; M. Morgan; J. C. Knights; R. A. Lujan
AIP Conf. Proc. 73, 283–287 (1981) https://doi.org/10.1063/1.33047
View articletitled, Geminate and non−geminate recombination in a–Si:H
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Studies on primary photocurrent of a‐Si:H using xerographic and vidicon techniques
I. Shimizu; S. Oda; K. Saito; H. Tomita; E. Inoue
AIP Conf. Proc. 73, 288–292 (1981) https://doi.org/10.1063/1.33048
View articletitled, Studies on primary photocurrent of a‐Si:H using xerographic and vidicon techniques
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Dispersive diffusion‐controlled bimolecular recombinations in a‐Si:H
K. L. Ngai
AIP Conf. Proc. 73, 293–297 (1981) https://doi.org/10.1063/1.33049
View articletitled, Dispersive diffusion‐controlled bimolecular recombinations in a‐Si:H
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Collection efficiency of photogenerated carriers in silicon hydride a‐SiHx MIS solar cell structures
B. Abeles; C. R. Wronski; Y. Goldstein; H. E. Stasiewski; D. Gutkowicz‐Krusin; T. Tiedje; G. D. Cody
AIP Conf. Proc. 73, 298–301 (1981) https://doi.org/10.1063/1.33050
View articletitled, Collection efficiency of photogenerated carriers in silicon hydride a‐SiH<sub>x</sub> MIS solar cell structures
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Effects of geminate recombination on the photovoltaic efficiency of a‐Si:H solar cells
I. Chen; J. Mort
AIP Conf. Proc. 73, 302–306 (1981) https://doi.org/10.1063/1.33051
View articletitled, Effects of geminate recombination on the photovoltaic efficiency of a‐Si:H solar cells
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Surface chemical reactivity of plasma‐deposited amorphous silicon
D. E. Aspnes; B. G. Bagley; A. A. Studna; A. C. Adams; F. B. Alexander, Jr.
AIP Conf. Proc. 73, 307–311 (1981) https://doi.org/10.1063/1.33052
View articletitled, Surface chemical reactivity of plasma‐deposited amorphous silicon
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Effect of thermal annealing on structural and electrical properties of the Pd‐a‐Si:H interfaces
C. C. Tsai; R. J. Nemanich; M. J. Thompson
AIP Conf. Proc. 73, 312–316 (1981) https://doi.org/10.1063/1.33053
View articletitled, Effect of thermal annealing on structural and electrical properties of the Pd‐a‐Si:H interfaces
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Diffusion length of holes in a‐Si:H by the surface photovoltage method
J. Dresner; D. J. Szostak; B. Goldstein
AIP Conf. Proc. 73, 317 (1981) https://doi.org/10.1063/1.33054
View articletitled, Diffusion length of holes in a‐Si:H by the surface photovoltage method
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Problems regarding the conductance in a‐Si:H films
H. Fitzsche; M. Tanielian
AIP Conf. Proc. 73, 318–322 (1981) https://doi.org/10.1063/1.33055
View articletitled, Problems regarding the conductance in a‐Si:H films
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A study of amorphous Si:H:F alloys using MIS tunnel junctions
I. Balber; D. E. Carlson
AIP Conf. Proc. 73, 323–328 (1981) https://doi.org/10.1063/1.33057
View articletitled, A study of amorphous Si:H:F alloys using MIS tunnel junctions
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Thickness dependence of the resistivity of amorphous hydrogenated silicon on various substrates
Gordon O. Johnson; J. A. McMillan; E. M. Peterson
AIP Conf. Proc. 73, 329–333 (1981) https://doi.org/10.1063/1.33058
View articletitled, Thickness dependence of the resistivity of amorphous hydrogenated silicon on various substrates
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Interference fringe analysis of a‐Si:H Schottky barrier cells
David L. Staebler
AIP Conf. Proc. 73, 334–338 (1981) https://doi.org/10.1063/1.33059
View articletitled, Interference fringe analysis of a‐Si:H Schottky barrier cells
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Inkjet- and flextrail-printing of silicon polymer-based inks for local passivating contacts
Zohreh Kiaee, Andreas Lösel, et al.
Effect of coupling agent type on the self-cleaning and anti-reflective behaviour of advance nanocoating for PV panels application
Taha Tareq Mohammed, Hadia Kadhim Judran, et al.
Students’ mathematical conceptual understanding: What happens to proficient students?
Dian Putri Novita Ningrum, Budi Usodo, et al.
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