Skip Nav Destination
Issues
Diffused Silicon Transistors and Switches (1954–55): The Beginning of Integrated Circuit Technology
AIP Conf. Proc. 683, 40–60 (2003)
https://doi.org/10.1063/1.1622452
Semiconductor Technology & Manufacturing Status, Challenges, and Solutions — A New Paradigm in the Making
AIP Conf. Proc. 683, 63–73 (2003)
https://doi.org/10.1063/1.1622453
CMOS Devices and Beyond — A Process Integration Perspective
AIP Conf. Proc. 683, 74–80 (2003)
https://doi.org/10.1063/1.1622454
Metrology Requirements and the Limits of Measurement Technology for the Semiconductor Industry
AIP Conf. Proc. 683, 81–96 (2003)
https://doi.org/10.1063/1.1622455
The “Ultimate” CMOS Device: A 2003 Perspective (Implications For Front‐End Characterization And Metrology)
AIP Conf. Proc. 683, 107–123 (2003)
https://doi.org/10.1063/1.1622457
Optical Metrology for Ultra‐thin Oxide and High‐K Gate Dielectrics
AIP Conf. Proc. 683, 124–128 (2003)
https://doi.org/10.1063/1.1622458
Critical metrology for ultrathin high k dielectrics
AIP Conf. Proc. 683, 129–138 (2003)
https://doi.org/10.1063/1.1622459
Advanced Characterization of High‐κ Materials Interfaces by High‐Resolution Photoemission using Synchrotron Radiation
Olivier Renault; Nicholas T. Barrett; David Samour; Jean‐François Damlencourt; Delphine Blin; Sybil Quiais‐Marthon
AIP Conf. Proc. 683, 139–142 (2003)
https://doi.org/10.1063/1.1622460
Preparation and Characterizations of High‐k Gate Dielectric CaZrO3 Thin Films by Sol‐gel Technology
AIP Conf. Proc. 683, 143–147 (2003)
https://doi.org/10.1063/1.1622461
High‐k dielectric characterization by VUV spectroscopic ellipsometry and X‐ray reflection
AIP Conf. Proc. 683, 148–153 (2003)
https://doi.org/10.1063/1.1622462
Non‐Destructive Characterization and Metrology for Ultra‐Thin High‐k Dielectric Layers
AIP Conf. Proc. 683, 154–159 (2003)
https://doi.org/10.1063/1.1622463
Non‐Contact C‐V Technique for high‐k Applications
Piotr Edelman; Alexandre Savtchouk; Marshall Wilson; John D’Amico; Joseph N. Kochey; Dmitriy Marinskiy; Jacek Lagowski
AIP Conf. Proc. 683, 160–165 (2003)
https://doi.org/10.1063/1.1622464
Optical properties of silicon oxynitride thin films determined by vacuum ultraviolet spectroscopic ellipsometry
AIP Conf. Proc. 683, 171–175 (2003)
https://doi.org/10.1063/1.1622466
Characterization of Hafnium Oxide Thin Films Prepared By MOCVD
Siew Fong Choy; Vanissa Sei Wei Lim; R. Gopalakrishan; Alastair Trigg; Lakshmi Kanta Bera; Shajan Matthew; N. Balasubramanian; Moon‐Sig Joo; Byung‐Jin Cho; Chia Ching Yeo
AIP Conf. Proc. 683, 176–180 (2003)
https://doi.org/10.1063/1.1622467
High‐k dielectric stack‐ellipsometry and electron diffraction measurements of interfacial oxides
AIP Conf. Proc. 683, 186–189 (2003)
https://doi.org/10.1063/1.1622469
Effects of Lightpipe Proximity on Si Wafer Temperature in Rapid Thermal Processing Tools
AIP Conf. Proc. 683, 200–204 (2003)
https://doi.org/10.1063/1.1622472
Analytical Methodologies for Semiconductor Process Characterization—Novel Mass Spectrometric Methods
AIP Conf. Proc. 683, 205–209 (2003)
https://doi.org/10.1063/1.1622473
Characterization of Si/SiGe Heterostructures for Strained Si CMOS
P. M. Mooney; S. J. Koester; H. J. Hovel; J. O. Chu; K. K. Chan; J. L. Jordan‐Sweet; J. A. Ott; N. Klymco; D. M. Mocuta
AIP Conf. Proc. 683, 213–222 (2003)
https://doi.org/10.1063/1.1622474
Characterization Techniques for Evaluating Strained Si CMOS Materials
Qianghua Xie; Ran Liu; Xiang‐Dong Wang; Michael Canonico; Erika Duda; Shifeng Lu; Candi Cook; Alex A. Volinsky; Stefan Zollner; Shawn G. Thomas; Ted White; Alex Barr; Mariam Sadaka; Bich‐Yen Nguyen
AIP Conf. Proc. 683, 223–227 (2003)
https://doi.org/10.1063/1.1622475
Root‐Cause Analysis and Statistical Process Control of Epilayers for SiGe:C Hetero‐Structure Bipolar Transistors
Qianghua Xie; Erika Duda; Mike Kottke; Wentao Qin; Xiangdong Wang; Shifeng Lu; Martha Erickson; Heather Kretzschmar; Linda Cross; Sharon Murphy
AIP Conf. Proc. 683, 228–232 (2003)
https://doi.org/10.1063/1.1622476
Characterization of SiGe Bulk Compositional Standards with Electron Probe Microanalysis
AIP Conf. Proc. 683, 238–242 (2003)
https://doi.org/10.1063/1.1622478
Characterization of Organic Contaminants Outgassed from Materials Used in Semiconductor Fabs/Processing
AIP Conf. Proc. 683, 245–253 (2003)
https://doi.org/10.1063/1.1622479
Direct To Digital Holography For High Aspect Ratio Inspection of Semiconductor Wafers
C. E. (Tommy) Thomas, Jr.; Martin A. Hunt; Tracy M. Bahm; Larry R. Baylor; Philip R. Bingham; Matthew D. Chidley; Xiaolong Dai; Robert J. Delahanty; Ayman El‐Khashab; Judd M. Gilbert; James S. Goddard; Gregory R. Hanson; Joel D. Hickson; Kathy W. Hylton; George C. John; Michael L. Jones; Michael W. Mayo; Christopher Marek; John H. Price; David A. Rasmussen; Louis J. Schaefer; Mark A. Schulze; Bichuan Shen; Randall G. Smith; Allen N. Su; Kenneth W. Tobin; William R. Usry; Edgar Voelkl; Karsten S. Weber; Robert W. Owen
AIP Conf. Proc. 683, 254–270 (2003)
https://doi.org/10.1063/1.1622480
Challenges of Finer Particle Detection on Unpatterned Silicon Wafers
AIP Conf. Proc. 683, 271–277 (2003)
https://doi.org/10.1063/1.1622481
Characterization of Missing‐poly Defects in Ion Implantation in ULSI Manufacturing
AIP Conf. Proc. 683, 278–283 (2003)
https://doi.org/10.1063/1.1622482
Full‐Wafer Defect Identification using X‐ray Topography
AIP Conf. Proc. 683, 284–288 (2003)
https://doi.org/10.1063/1.1622483
Contamination‐Free Manufacturing: Tool Component Qualification, Verification and Correlation with Wafers
AIP Conf. Proc. 683, 289–293 (2003)
https://doi.org/10.1063/1.1622484
TOFSIMS Characterization of Molecular Contamination Induced Resist Scumming
AIP Conf. Proc. 683, 294–299 (2003)
https://doi.org/10.1063/1.1622485
Controlling Wafer Contamination Using Automated On‐Line Metrology during Wet Chemical Cleaning
AIP Conf. Proc. 683, 300–308 (2003)
https://doi.org/10.1063/1.1622486
Should We Analyze for Trace Metal Contamination at the Edge, Bevel, and Edge Exclusion of Wafers?
AIP Conf. Proc. 683, 309–312 (2003)
https://doi.org/10.1063/1.1622487
NIST Calibration Facility for Sizing Spheres Suspended in Liquids
AIP Conf. Proc. 683, 313–317 (2003)
https://doi.org/10.1063/1.1622488
Measurement of Gate‐Oxide Film Thicknesses by X‐ray Photoelectron Spectroscopy
AIP Conf. Proc. 683, 321–325 (2003)
https://doi.org/10.1063/1.1622489
Assessment of Ultra‐Thin SiO2 Film Thickness Measurement Precision by Ellipsometry
AIP Conf. Proc. 683, 326–330 (2003)
https://doi.org/10.1063/1.1622490
Thickness Evaluation for 2nm SiO2 Films, a Comparison of Ellipsometric, Capacitance‐Voltage and HRTEM Measurements
James Ehrstein; Curt Richter; Deane Chandler‐Horowitz; Eric Vogel; Donnie Ricks; Chadwin Young; Steve Spencer; Shweta Shah; Dennis Maher; Brendan Foran; Alain Diebold; Pui Yee Hung
AIP Conf. Proc. 683, 331–336 (2003)
https://doi.org/10.1063/1.1622491
Uncertainties Caused by Surface Adsorbates in Estimates of the Thickness of SiO2 Ultrathin Films
AIP Conf. Proc. 683, 337–342 (2003)
https://doi.org/10.1063/1.1622492
Quantification of Local Elastic Properties Using Ultrasonic Force Microscopy
AIP Conf. Proc. 683, 343–347 (2003)
https://doi.org/10.1063/1.1622493
Determination of Factors Affecting HRTEM Gate Dielectric Thickness Measurement Uncertainty
AIP Conf. Proc. 683, 348–352 (2003)
https://doi.org/10.1063/1.1622494
Microtensile Testing of Thin Films in the Optical and Scanning Electron Microscopes
AIP Conf. Proc. 683, 353–356 (2003)
https://doi.org/10.1063/1.1622495
Non‐destructive surface profile measurement of a thin film deposited on a patterned sample
AIP Conf. Proc. 683, 357–361 (2003)
https://doi.org/10.1063/1.1622496
Application of High Pressure/Environmental Scanning Electron Microscopy to Photomask Dimensional Metrology
AIP Conf. Proc. 683, 396–399 (2003)
https://doi.org/10.1063/1.1622501
A Model for Step Height, Edge Slope and Linewidth Measurements Using AFM
AIP Conf. Proc. 683, 400–408 (2003)
https://doi.org/10.1063/1.1622502
A primary standard for 157 nm excimer laser measurements
AIP Conf. Proc. 683, 409–412 (2003)
https://doi.org/10.1063/1.1622503
Critical Dimension Calibration Standards for ULSI Metrology
AIP Conf. Proc. 683, 421–428 (2003)
https://doi.org/10.1063/1.1622505
Form of Deprotection in Chemically Amplified Resists
Ronald L. Jones; Tengjiao Hu; Vivek M. Prabhu; Christopher L. Soles; Eric K. Lin; Wen‐li Wu; Dario L. Goldfarb; Marie Angelopoulos
AIP Conf. Proc. 683, 429–433 (2003)
https://doi.org/10.1063/1.1622506
3‐Dimensional Lineshape Metrology Using Small Angle X‐ray Scattering
AIP Conf. Proc. 683, 434–438 (2003)
https://doi.org/10.1063/1.1622507
NEXAFS Measurements of the Surface Chemistry of Chemically Amplified Photoresists
Erin L. Jablonski; Joseph L. Lenhart; Sharadha Sambasivan; Daniel A. Fischer; Ronald L. Jones; Eric K. Lin; Wen‐li Wu; Dario L. Goldfarb; Karen Temple; Marie Angelopoulos; Hiroshi Ito
AIP Conf. Proc. 683, 439–443 (2003)
https://doi.org/10.1063/1.1622508
Facility for Pulsed Extreme Ultraviolet Detector Calibration
AIP Conf. Proc. 683, 444–447 (2003)
https://doi.org/10.1063/1.1622509
Correlation of Surface and Film Chemistry with Mechanical Properties in Interconnects
AIP Conf. Proc. 683, 455–461 (2003)
https://doi.org/10.1063/1.1622511
Nanoscale Thermal and Thermoelectric Mapping of Semiconductor Devices and Interconnects
AIP Conf. Proc. 683, 462–468 (2003)
https://doi.org/10.1063/1.1622512
Potential and Limits of Texture Measurement Techniques for Inlaid Copper Process Optimization
AIP Conf. Proc. 683, 469–479 (2003)
https://doi.org/10.1063/1.1622513
In situ X‐ray Microscopy Studies of Electromigration in Copper Interconnects
AIP Conf. Proc. 683, 480–484 (2003)
https://doi.org/10.1063/1.1622514
Room Temperature Electroplated Copper Recrystallization: In‐Situ Mapping on 200/300 mm Patterned Wafers
AIP Conf. Proc. 683, 485–489 (2003)
https://doi.org/10.1063/1.1622515
Metrology Tool for Microstructure Control on 300 mm Wafers During Damascene Copper Processing
AIP Conf. Proc. 683, 490–493 (2003)
https://doi.org/10.1063/1.1622516
Texture and stress analysis in as‐deposited and annealed damascene Cu interconnects using XRD & OIM
AIP Conf. Proc. 683, 494–498 (2003)
https://doi.org/10.1063/1.1622517
Microstructure Analysis in As‐deposited and Annealed Damascene Cu Interconnects using OIM
AIP Conf. Proc. 683, 499–503 (2003)
https://doi.org/10.1063/1.1622518
Controlling Copper Electrochemical Deposition (ECD)
AIP Conf. Proc. 683, 504–513 (2003)
https://doi.org/10.1063/1.1622519
Analysis And Control Of Copper Plating Bath Additives And By‐Products
AIP Conf. Proc. 683, 514–518 (2003)
https://doi.org/10.1063/1.1622520
Nanoindentation Study of the Mechanical Behavior of Silicon Nano‐springs
AIP Conf. Proc. 683, 525–529 (2003)
https://doi.org/10.1063/1.1622522
Impact of Low k Dielectrics on Electromigration Reliability for Cu Interconnects
AIP Conf. Proc. 683, 533–539 (2003)
https://doi.org/10.1063/1.1622523
New infrared spectroscopic ellipsometer for low‐k dielectric characterization
AIP Conf. Proc. 683, 540–545 (2003)
https://doi.org/10.1063/1.1622524
Pore Size Distribution Measurement of Porous Low‐k Dielectrics Using TR‐SAXS
AIP Conf. Proc. 683, 546–550 (2003)
https://doi.org/10.1063/1.1622525
Material Characterization and the Formation of Nanoporous PMSSQ Low‐K Dielectrics
P. Lazzeri; L. Vanzetti; E. Iacob; M. Bersani; M. Anderle; J. J. Park; Z. Lin; R. M. Briber; G. W. Rubloff; R. D. Miller
AIP Conf. Proc. 683, 551–555 (2003)
https://doi.org/10.1063/1.1622526
Determination of Pore‐Size Distributions in Low‐k Dielectric Films by Transmission Electron Microscopy
AIP Conf. Proc. 683, 556–561 (2003)
https://doi.org/10.1063/1.1622527
Porosity Characterization of porous SiLK™ Dielectric Films
AIP Conf. Proc. 683, 562–566 (2003)
https://doi.org/10.1063/1.1622528
Measurement of Pore Size and Matrix Characteristics in Low‐k Dielectrics by Neutron Contrast Variation
AIP Conf. Proc. 683, 567–571 (2003)
https://doi.org/10.1063/1.1622529
X‐ray Porosimetry as a Metrology to Characterize The Pore Structure of Low‐k Dielectric Films
AIP Conf. Proc. 683, 576–580 (2003)
https://doi.org/10.1063/1.1622531
On‐line Analysis of Process Chemicals by Inductively Coupled Plasma Mass Spectrometry (ICP‐MS)
AIP Conf. Proc. 683, 606–610 (2003)
https://doi.org/10.1063/1.1622534
Novel Applications of Gas‐Phase Analytical Methods to Semiconductor Process Emissions
AIP Conf. Proc. 683, 611–615 (2003)
https://doi.org/10.1063/1.1622535
Transmission Electron Microscopy: Overview and Challenges
S. J. Pennycook; A. R. Lupini; A. Borisevich; M. Varela; Y. Peng; P. D. Nellist; G. Duscher; R. Buczko; S. T. Pantelides
AIP Conf. Proc. 683, 627–633 (2003)
https://doi.org/10.1063/1.1622537
High Resolution X‐ray Scattering Methods For ULSI Materials Characterization
AIP Conf. Proc. 683, 634–645 (2003)
https://doi.org/10.1063/1.1622538
Characterization of Porous, Low‐k Dielectric Thin‐Films using X‐ray Reflectivity
AIP Conf. Proc. 683, 651–655 (2003)
https://doi.org/10.1063/1.1622540
Ultra‐shallow Junction Metrology Using the Therma‐Probe Tool
AIP Conf. Proc. 683, 656–659 (2003)
https://doi.org/10.1063/1.1622541
Study of oxide quality for scanning capacitance microscope measurements
AIP Conf. Proc. 683, 667–671 (2003)
https://doi.org/10.1063/1.1622543
Assessing the resolution limits of scanning spreading resistance microscopy and scanning capacitance microscopy
AIP Conf. Proc. 683, 678–684 (2003)
https://doi.org/10.1063/1.1622545
Recent progress and insights in two‐dimensional carrier profiling using scanning spreading resistance microscopy
AIP Conf. Proc. 683, 685–692 (2003)
https://doi.org/10.1063/1.1622546
Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques
AIP Conf. Proc. 683, 695–704 (2003)
https://doi.org/10.1063/1.1622547
In situ sputtering rate measurement by laser interferometer applied to SIMS analyses
AIP Conf. Proc. 683, 705–709 (2003)
https://doi.org/10.1063/1.1622548
Bevel Depth Profiling SIMS for Analysis of Layer Structures
AIP Conf. Proc. 683, 710–714 (2003)
https://doi.org/10.1063/1.1622549
Using Direct Solid Sampling ICP‐MS to Complement SEM‐EDX and SIMS in Characterizing Semiconductor Materials
AIP Conf. Proc. 683, 715–719 (2003)
https://doi.org/10.1063/1.1622550
Status and Prospects For VUV Ellipsometry (Applied to High K and Low K Materials)
AIP Conf. Proc. 683, 723–737 (2003)
https://doi.org/10.1063/1.1622551
Applications of UV‐Raman Spectroscopy to Microelectronic Materials and Devices
AIP Conf. Proc. 683, 738–743 (2003)
https://doi.org/10.1063/1.1622552
Characterization of Ion‐implantation in Silicon by using Laser Infrared Photo‐Thermal Radiometry (PTR)
AIP Conf. Proc. 683, 744–747 (2003)
https://doi.org/10.1063/1.1622553
In Situ Optical Diagnostics of Silicon Chemical Vapor Deposition Gas‐Phase Processes
AIP Conf. Proc. 683, 748–752 (2003)
https://doi.org/10.1063/1.1622554
Carrier Illumination as a tool to probe implant dose and electrical activation
AIP Conf. Proc. 683, 758–763 (2003)
https://doi.org/10.1063/1.1622556
Challenges of Electrical Measurements of Advanced Gate Dielectrics in Metal‐Oxide‐Semiconductor Devices
AIP Conf. Proc. 683, 771–781 (2003)
https://doi.org/10.1063/1.1622558
Inkjet- and flextrail-printing of silicon polymer-based inks for local passivating contacts
Zohreh Kiaee, Andreas Lösel, et al.
Effect of coupling agent type on the self-cleaning and anti-reflective behaviour of advance nanocoating for PV panels application
Taha Tareq Mohammed, Hadia Kadhim Judran, et al.
Design of a 100 MW solar power plant on wetland in Bangladesh
Apu Kowsar, Sumon Chandra Debnath, et al.