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Metrology needs for the semiconductor industry over the next decade

Mark Melliar-Smith; Alain C. Diebold

AIP Conf. Proc. 449, 3–20 (1998) https://doi.org/10.1063/1.56823

Abstract

View articletitled, Metrology needs for the semiconductor industry over the next decade

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Industry/University/Government partnerships in metrology: A new paradigm for the future

C. R. Helms

AIP Conf. Proc. 449, 21–29 (1998) https://doi.org/10.1063/1.56797

Abstract

View articletitled, Industry/University/Government partnerships in metrology: A new paradigm for the future

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Gauging the future: The long term business outlook for metrology and wafer inspection equipment

David S. Perloff

AIP Conf. Proc. 449, 31–38 (1998) https://doi.org/10.1063/1.56812

Abstract

View articletitled, Gauging the future: The long term business outlook for metrology and wafer inspection equipment

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Effect of technology scaling on MOS electrical characterization

Mohsen Alavi; Rafael Rios

AIP Conf. Proc. 449, 39–45 (1998) https://doi.org/10.1063/1.56822

Abstract

View articletitled, Effect of technology scaling on MOS electrical characterization

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Elements for successful sensor-based process control {Integrated Metrology}

Stephanie Watts Butler

AIP Conf. Proc. 449, 47–53 (1998) https://doi.org/10.1063/1.56836

Abstract

View articletitled, Elements for successful sensor-based process control {Integrated Metrology}

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Characterization and metrology implications of the 1997 NTRS

W. Class; J. J. Wortman

AIP Conf. Proc. 449, 57–63 (1998) https://doi.org/10.1063/1.56846

Abstract

View articletitled, Characterization and metrology implications of the 1997 NTRS

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Characterization of ultrathin gate oxides for advanced MOSFETs

M. Hirose; W. Mizubayashi; M. Fukuda; S. Miyazaki

AIP Conf. Proc. 449, 65–69 (1998) https://doi.org/10.1063/1.56852

Abstract

View articletitled, Characterization of ultrathin gate oxides for advanced MOSFETs

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Modeling of manufacturing sensitivity and of statistically based process control requirements for a 0.18 μm NMOS device

P. M. Zeitzoff; A. F. Tasch; W. E. Moore; S. A. Khan; D. Angelo

AIP Conf. Proc. 449, 73–81 (1998) https://doi.org/10.1063/1.56859

Abstract

View articletitled, Modeling of manufacturing sensitivity and of statistically based process control requirements for a 0.18 μm NMOS device

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An analytical framework for first-order CMOS device design

J. A. del Alamo; W. T. Lynch; D. A. Antoniadis

AIP Conf. Proc. 449, 83–90 (1998) https://doi.org/10.1063/1.56875

Abstract

View articletitled, An analytical framework for first-order CMOS device design

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Physical modeling of shallow/deep junctions

Conor Rafferty

AIP Conf. Proc. 449, 91–94 (1998) https://doi.org/10.1063/1.56887

Abstract

View articletitled, Physical modeling of shallow/deep junctions

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Model-based silicon wafer criteria for optimal integrated circuit performance

Howard R. Huff; Randal K. Goodall; W. Murray Bullis; James A. Moreland; Fritz G. Kirscht; Syd R. Wilson; The NTRS Starting Materials Team

AIP Conf. Proc. 449, 97–112 (1998) https://doi.org/10.1063/1.56795

Abstract

View articletitled, Model-based silicon wafer criteria for optimal integrated circuit performance

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Reliability characterization of ultra-thin film dielectrics

J. S. Suehle

AIP Conf. Proc. 449, 115–119 (1998) https://doi.org/10.1063/1.56786

Abstract

View articletitled, Reliability characterization of ultra-thin film dielectrics

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Thin film ellipsometry metrology

Prabha Durgapal; James R. Ehrstein; Nhan V. Nguyen

AIP Conf. Proc. 449, 121–131 (1998) https://doi.org/10.1063/1.56787

Abstract

View articletitled, Thin film ellipsometry metrology

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Analysis of organic contamination in semiconductor processing

Patrick J. Smith; Patricia M. Lindley

AIP Conf. Proc. 449, 133–139 (1998) https://doi.org/10.1063/1.56788

Abstract

View articletitled, Analysis of organic contamination in semiconductor processing

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In-line characterization of doping technologies for ULSI: Requirements and capabilities

Larry Larson; Michael Current

AIP Conf. Proc. 449, 143–151 (1998) https://doi.org/10.1063/1.56789

Abstract

View articletitled, In-line characterization of doping technologies for ULSI: Requirements and capabilities

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Metrology of 300 mm silicon wafers: Challenges and results

P. Wagner

AIP Conf. Proc. 449, 153–160 (1998) https://doi.org/10.1063/1.56790

Abstract

View articletitled, Metrology of 300 mm silicon wafers: Challenges and results

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Metrology issues for processing of 300 mm wafers

Kenji Watanabe; Atsuyoshi Koike

AIP Conf. Proc. 449, 161–167 (1998) https://doi.org/10.1063/1.56791

Abstract

View articletitled, Metrology issues for processing of 300 mm wafers

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Metrology aspects of SIMS depth profiling for advanced ULSI processes

Andre Budrevich; Jerry Hunter

AIP Conf. Proc. 449, 169–181 (1998) https://doi.org/10.1063/1.56792

Abstract

View articletitled, Metrology aspects of SIMS depth profiling for advanced ULSI processes

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Characterization of thin ${SiO}_{2}$ on Si by spectroscopic ellipsometry, neutron reflectometry, and x-ray reflectometry

C. A. Richter; N. V. Nguyen; J. A. Dura; C. F. Majkrzak

AIP Conf. Proc. 449, 185–189 (1998) https://doi.org/10.1063/1.56796

Abstract

View articletitled, Characterization of thin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> on Si by spectroscopic ellipsometry, neutron reflectometry, and x-ray reflectometry

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Structure, composition and strain profiling of ${Si/SiO}_{2}$ interfaces

G. Duscher; S. J. Pennycook; N. D. Browning; R. Rupangudi; C. Takoudis; H-J Gao; R. Singh

AIP Conf. Proc. 449, 191–195 (1998) https://doi.org/10.1063/1.56793

Abstract

View articletitled, Structure, composition and strain profiling of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> interfaces

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Thickness evaluation of ultrathin gate oxides at the limit

Dae Won Moon; Hyun Kyong Kim; Hwack Joo Lee; Yong Jai Cho; Hyun Mo Cho

AIP Conf. Proc. 449, 197–200 (1998) https://doi.org/10.1063/1.56794

Abstract

View articletitled, Thickness evaluation of ultrathin gate oxides at the limit

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Determination of shallow dopants in silicon by low-temperature FTIR spectroscopy

H. Ch. Alt; M. Gellon; M. G. Pretto; R. Scala; F. Bittersberger; K. Hesse; A. Kempf

AIP Conf. Proc. 449, 201–205 (1998) https://doi.org/10.1063/1.56896

Abstract

View articletitled, Determination of shallow dopants in silicon by low-temperature FTIR spectroscopy

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High-resolution, high-accuracy, mid-IR $({450 cm}^{−1} {⩽ω⩽4000 cm}^{−1})$ refractive index measurements in silicon

Deane Chandler-Horowitz; Paul M. Amirtharaj; John R. Stoup

AIP Conf. Proc. 449, 207–211 (1998) https://doi.org/10.1063/1.56897

Abstract

View articletitled, High-resolution, high-accuracy, mid-IR <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msup xmlns=""><mi mathvariant="normal">450 cm</mi><mrow><mi mathvariant="normal">−1</mi></mrow></msup><msup xmlns=""><mi mathvariant="normal">⩽ω⩽4000 cm</mi><mrow><mi mathvariant="normal">−1</mi></mrow></msup><mi xmlns="">)</mi></math> refractive index measurements in silicon

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Infrared spectroscopy for process control and fault detection of advanced semiconductor processes

AIP Conf. Proc. 449, 213–219 (1998) https://doi.org/10.1063/1.56898

Abstract

View articletitled, Infrared spectroscopy for process control and fault detection of advanced semiconductor processes

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Measurement of silicon doping profiles using infrared ellipsometry combined with anodic oxidation sectioning

Thomas E. Tiwald; Aaron D. Miller; John A. Woollam

AIP Conf. Proc. 449, 221–225 (1998) https://doi.org/10.1063/1.56798

Abstract

View articletitled, Measurement of silicon doping profiles using infrared ellipsometry combined with anodic oxidation sectioning

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Verification of carrier density profiles derived from spreading resistance measurements by comparing measured and calculated sheet resistance values

R. G. Mazur; S. M. Ramey; C. L. Hartford; E. J. Hartford; M. Kouno; L. S. Tan

AIP Conf. Proc. 449, 226–230 (1998) https://doi.org/10.1063/1.56799

Abstract

View articletitled, Verification of carrier density profiles derived from spreading resistance measurements by comparing measured and calculated sheet resistance values

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Leakage compensated charge method for determining static C-V characteristics of ultra-thin MOS capacitors

Hui Song; Edwin Dons; Xi Qing Sun; K. R. Farmer

AIP Conf. Proc. 449, 231–234 (1998) https://doi.org/10.1063/1.56800

Abstract

View articletitled, Leakage compensated charge method for determining static C-V characteristics of ultra-thin MOS capacitors

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Characterization of ultra-thin oxides using electrical C-V and I-V measurements

J. R. Hauser; K. Ahmed

AIP Conf. Proc. 449, 235–239 (1998) https://doi.org/10.1063/1.56801

Abstract

View articletitled, Characterization of ultra-thin oxides using electrical C-V and I-V measurements

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Threshold voltage $(V_{T})$ control of sub-0.25 μm processes using mercury gate MOS capacitors

R. J. Hillard; R. G. Mazur; J. C. Sherbondy; L. Peitersen; M. Wilson; R. Herlocher

AIP Conf. Proc. 449, 240–244 (1998) https://doi.org/10.1063/1.56802

Abstract

View articletitled, Threshold voltage <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">V</mi><mrow><mi mathvariant="normal">T</mi></mrow></msub><mi xmlns="">)</mi></math> control of sub-0.25 μm processes using mercury gate MOS capacitors

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Advances in surface photovoltage technique for monitoring of the IC processes

K. Nauka; J. Lagowski

AIP Conf. Proc. 449, 245–249 (1998) https://doi.org/10.1063/1.56803

Abstract

View articletitled, Advances in surface photovoltage technique for monitoring of the IC processes

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Non-contact monitoring of electrical characteristics of silicon surface and near-surface region

P. Roman; M. Brubaker; J. Staffa; E. Kamieniecki; J. Ruzyllo

AIP Conf. Proc. 449, 250–254 (1998) https://doi.org/10.1063/1.56804

Abstract

View articletitled, Non-contact monitoring of electrical characteristics of silicon surface and near-surface region

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Contactless transient spectroscopy for the measurement of localized states in semiconductors

S. Kishino; H. Yoshida

AIP Conf. Proc. 449, 255–259 (1998) https://doi.org/10.1063/1.56805

Abstract

View articletitled, Contactless transient spectroscopy for the measurement of localized states in semiconductors

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Tunneling spectroscopy of the silicon metal-oxide-semiconductor system

Whye-Kei Lye; Tso-Ping Ma; Richard C. Barker; Eiji Hasegawa; Yin Hu; John Kuehne; David Frystak

AIP Conf. Proc. 449, 261–265 (1998) https://doi.org/10.1063/1.56806

Abstract

View articletitled, Tunneling spectroscopy of the silicon metal-oxide-semiconductor system

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Characterization of ultra-shallow junctions with tapered groove profilometry and other techniques

S. Prussin; Christiaan A. Bil; Daniel F. Downey; M. L. Meloni; Carlton M. Osburn

AIP Conf. Proc. 449, 266–271 (1998) https://doi.org/10.1063/1.56899

Abstract

View articletitled, Characterization of ultra-shallow junctions with tapered groove profilometry and other techniques

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A new low thermal budget approach to interface nitridation for ultra-thin silicon dioxide gate dielectrics by combined plasma-assisted and rapid thermal processing

H. Niimi; H. Y. Yang; G. Lucovsky

AIP Conf. Proc. 449, 273–277 (1998) https://doi.org/10.1063/1.56894

Abstract

View articletitled, A new low thermal budget approach to interface nitridation for ultra-thin silicon dioxide gate dielectrics by combined plasma-assisted and rapid thermal processing

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Development of a metrology method for composition and thickness of barium strontium titanate thin films

Thomas Remmel; Dennis Werho; Ran Liu; Peir Chu

AIP Conf. Proc. 449, 278–282 (1998) https://doi.org/10.1063/1.56900

Abstract

View articletitled, Development of a metrology method for composition and thickness of barium strontium titanate thin films

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Physical and chemical characterization of barium strontium titanate thin films

Thomas Remmel; Wei Chen; Ran Liu; Mike Kottke; Richard Gregory; Peter Fejes; Beth Baumert; Peir Chu

AIP Conf. Proc. 449, 283–287 (1998) https://doi.org/10.1063/1.56807

Abstract

View articletitled, Physical and chemical characterization of barium strontium titanate thin films

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Suppression of boron penetration for p+ polysilicon gate electrodes by ultra-thin RPECVD nitride films in composite oxide-nitride dielectrics

Yider Wu; Gerald Lucovsky

AIP Conf. Proc. 449, 288–291 (1998) https://doi.org/10.1063/1.56901

Abstract

View articletitled, Suppression of boron penetration for p+ polysilicon gate electrodes by ultra-thin RPECVD nitride films in composite oxide-nitride dielectrics

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Luminescence measurements of sub-oxide band-tail and Si dangling bond states at ultrathin ${Si-SiO}_{2}$ interfaces

A. P. Young; J. Schäfer; G. H. Jessen; R. Bandhu; L. J. Brillson; G. Lucovsky; H. Niimi

AIP Conf. Proc. 449, 293–297 (1998) https://doi.org/10.1063/1.56808

Abstract

View articletitled, Luminescence measurements of sub-oxide band-tail and Si dangling bond states at ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si-SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> interfaces

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Optical studies of phosphorus-doped poly-Si films

Stefan Zollner; Ran Liu; Jim Christiansen; Wei Chen; Kathy Monarch; Tan-Chen Lee; Rana Singh; Jane Yater; Wayne M. Paulson; Chris Feng

AIP Conf. Proc. 449, 298–302 (1998) https://doi.org/10.1063/1.56809

Abstract

View articletitled, Optical studies of phosphorus-doped poly-Si films

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Calibration wafer for temperature measurements in RTP tools

K. G. Kreider; D. P. DeWitt; B. K. Tsai; F. J. Lovas; D. W. Allen

AIP Conf. Proc. 449, 303–309 (1998) https://doi.org/10.1063/1.56810

Abstract

View articletitled, Calibration wafer for temperature measurements in RTP tools

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Rapid non-invasive temperature measurement of complex Si structures using in-situ spectroscopic ellipsometry

R. T. Carline; J. Russell; C Pickering; D. A. O. Hope

AIP Conf. Proc. 449, 310–314 (1998) https://doi.org/10.1063/1.56902

Abstract

View articletitled, Rapid non-invasive temperature measurement of complex Si structures using in-situ spectroscopic ellipsometry

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Fabrication of SiGe and SiGeC epitaxial layers by ion implantation and excimer laser annealing

P. Boher; J. L. Stehle; J. P. Piel; E. Fogarassy

AIP Conf. Proc. 449, 315–319 (1998) https://doi.org/10.1063/1.56811

Abstract

View articletitled, Fabrication of SiGe and SiGeC epitaxial layers by ion implantation and excimer laser annealing

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Application of electrical step resistance measurement technique for ULSI/VLSI process characterization

Walter H. Johnson; Charlie Hong; Bill Glover

AIP Conf. Proc. 449, 321–325 (1998) https://doi.org/10.1063/1.56813

Abstract

View articletitled, Application of electrical step resistance measurement technique for ULSI/VLSI process characterization

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In-situ surface and interface characterization by optical second harmonic generation (SHG) of silicon dioxide fabrication with high purity ozone

Ken Nakamura; Akira Kurokawa; Shingo Ichimura

AIP Conf. Proc. 449, 326–330 (1998) https://doi.org/10.1063/1.56814

Abstract

View articletitled, In-situ surface and interface characterization by optical second harmonic generation (SHG) of silicon dioxide fabrication with high purity ozone

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Analysis of reflectometry and ellipsometry data from patterned structures

M. E. Lee; C. Galarza; W. Kong; W. Sun; F. L. Terry, Jr.

AIP Conf. Proc. 449, 331–335 (1998) https://doi.org/10.1063/1.56815

Abstract

View articletitled, Analysis of reflectometry and ellipsometry data from patterned structures

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In situ layer characterization by spectroscopic ellipsometry at high temperatures

W. Lehnert; P. Petrik; C. Schneider; L. Pfitzner; H. Ryssel

AIP Conf. Proc. 449, 336–340 (1998) https://doi.org/10.1063/1.56816

Abstract

View articletitled, In situ layer characterization by spectroscopic ellipsometry at high temperatures

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Instrumental and computational advances for real-time process control using spectroscopic ellipsometry

C. Pickering; J. Russell; D. A. O. Hope; R. T. Carline; A. D. Marrs; D. J. Robbins; A. Dann

AIP Conf. Proc. 449, 341–345 (1998) https://doi.org/10.1063/1.56817

Abstract

View articletitled, Instrumental and computational advances for real-time process control using spectroscopic ellipsometry

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Evaluation of an automated spectroscopic ellipsometer for in-line process control

C. Pickering; J. Russell; V. Nayar; J. Imschweiler; H. Wille; S. Harrington; C. Wiggins; J.-L. Stehlé; J.-P. Piel; J. Bruchez

AIP Conf. Proc. 449, 347–351 (1998) https://doi.org/10.1063/1.56903

Abstract

View articletitled, Evaluation of an automated spectroscopic ellipsometer for in-line process control

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Metrology standards with ellipsometers

John A. Woollam; James N. Hilfiker; C. M. Herzinger; Ron A. Synowicki; M. Liphardt

AIP Conf. Proc. 449, 352–356 (1998) https://doi.org/10.1063/1.56818

Abstract

View articletitled, Metrology standards with ellipsometers

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Evaluation of surface depletion effects in single-crystal test structures for reference materials applications

Richard A. Allen; Rathindra N. Ghoshtagore

AIP Conf. Proc. 449, 357–362 (1998) https://doi.org/10.1063/1.56819

Abstract

View articletitled, Evaluation of surface depletion effects in single-crystal test structures for reference materials applications

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In-situ real-time mass spectroscopic sensing and mass balance modeling of selective area silicon PECVD

Ashfaqul I. Chowdhury; Tonya M. Klein; Gregory N. Parsons

AIP Conf. Proc. 449, 363–367 (1998) https://doi.org/10.1063/1.56820

Abstract

View articletitled, In-situ real-time mass spectroscopic sensing and mass balance modeling of selective area silicon PECVD

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Optical densitometry applications for Ion Implantation

John P. Esteves; Michael J. Rendon

AIP Conf. Proc. 449, 369–373 (1998) https://doi.org/10.1063/1.56904

Abstract

View articletitled, Optical densitometry applications for Ion Implantation

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Dimensional metrology challenges for ULSI interconnects

R. Havemann; H. Marchman; G. Dixit; M. Jain; E. Zielinski; A. Ralston; Y. Hsu; C. Jin; A. Singh; J. Schlesinger

AIP Conf. Proc. 449, 377–384 (1998) https://doi.org/10.1063/1.56905

Abstract

View articletitled, Dimensional metrology challenges for ULSI interconnects

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Picosecond ultrasonics: A new approach for control of thin metal processes

Robert J. Stoner; Christopher J. Morath; Guray Tas; George Antonelli; Humphrey J. Maris

AIP Conf. Proc. 449, 385–394 (1998) https://doi.org/10.1063/1.56821

Abstract

View articletitled, Picosecond ultrasonics: A new approach for control of thin metal processes

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Statistical metrology—measurement and modeling of variation for advanced process development and design rule generation

Duane S. Boning; James E. Chung

AIP Conf. Proc. 449, 395–404 (1998) https://doi.org/10.1063/1.56906

Abstract

View articletitled, Statistical metrology—measurement and modeling of variation for advanced process development and design rule generation

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Wafer inspection technology challenges for ULSI manufacturing

Stan Stokowski; Mehdi Vaez-Iravani

AIP Conf. Proc. 449, 405–415 (1998) https://doi.org/10.1063/1.56824

Abstract

View articletitled, Wafer inspection technology challenges for ULSI manufacturing

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All-optical, non-contact measurement of copper and tantalum films deposited by PVD and ECD in blanket films and single damascene structures

Matthew Banet; Henry Yeung; John Hanselman; Hank Sola; Martin Fuchs; Hieu “Robbie” Lam

AIP Conf. Proc. 449, 419–423 (1998) https://doi.org/10.1063/1.56825

Abstract

View articletitled, All-optical, non-contact measurement of copper and tantalum films deposited by PVD and ECD in blanket films and single damascene structures

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Grain orientation mapping of passivated aluminum interconnect lines by x-ray micro-diffraction

C. H. Chang; A. A. MacDowell; A. C. Thompson; H. A. Padmore; J. R. Patel

AIP Conf. Proc. 449, 424–426 (1998) https://doi.org/10.1063/1.56826

Abstract

View articletitled, Grain orientation mapping of passivated aluminum interconnect lines by x-ray micro-diffraction

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In-situ plasma chamber monitoring for feedforward process control

Jinsoo Kim; Kensall D. Wise

AIP Conf. Proc. 449, 427–430 (1998) https://doi.org/10.1063/1.56827

Abstract

View articletitled, In-situ plasma chamber monitoring for feedforward process control

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Optical computer aided tomography measurements of plasma uniformity in an inductively coupled discharge

E. C. Benck; J. R. Roberts

AIP Conf. Proc. 449, 431–435 (1998) https://doi.org/10.1063/1.56828

Abstract

View articletitled, Optical computer aided tomography measurements of plasma uniformity in an inductively coupled discharge

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Applications of electron-interaction reference data to the semiconductor industry

L. G. Christophorou; J. K. Olthoff

AIP Conf. Proc. 449, 437–441 (1998) https://doi.org/10.1063/1.56829

Abstract

View articletitled, Applications of electron-interaction reference data to the semiconductor industry

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RF sensing for real-time monitoring of plasma processing

Craig Garvin; Jessy W. Grizzle

AIP Conf. Proc. 449, 442–446 (1998) https://doi.org/10.1063/1.56830

Abstract

View articletitled, RF sensing for real-time monitoring of plasma processing

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Rapid assessment of plasma damage effects

L. E. Peitersen; G. A. Gruber; R. J. Hillard; R. G. Mazur; R. H. Herlocher; Richard Conti

AIP Conf. Proc. 449, 447–448 (1998) https://doi.org/10.1063/1.56907

Abstract

View articletitled, Rapid assessment of plasma damage effects

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Novel ion current sensor for real-time, in-situ monitoring and control of plasma processing

Mark A. Sobolewski

AIP Conf. Proc. 449, 449–453 (1998) https://doi.org/10.1063/1.56908

Abstract

View articletitled, Novel ion current sensor for real-time, in-situ monitoring and control of plasma processing

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Spatial uniformity in chamber-cleaning plasmas measured using planar laser-induced fluorescence

Kristen L. Steffens; Mark A. Sobolewski

AIP Conf. Proc. 449, 454–458 (1998) https://doi.org/10.1063/1.56831

Abstract

View articletitled, Spatial uniformity in chamber-cleaning plasmas measured using planar laser-induced fluorescence

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In situ mid-infrared analyses of reactive gas-phase intermediates in TEOS/Ozone SAPCVD

Thomas K. Whidden; Sarah Doiron

AIP Conf. Proc. 449, 459–463 (1998) https://doi.org/10.1063/1.56832

Abstract

View articletitled, In situ mid-infrared analyses of reactive gas-phase intermediates in TEOS/Ozone SAPCVD

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X-ray scanning photoemission microscopy of titanium silicides and Al-Cu interconnects

G. F. Lorusso; H. Solak; S. Singh; F. Cerrina; P. J. Batson; J. H. Underwood

AIP Conf. Proc. 449, 465–468 (1998) https://doi.org/10.1063/1.56833

Abstract

View articletitled, X-ray scanning photoemission microscopy of titanium silicides and Al-Cu interconnects

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Thin-film metrology by rapid x-ray reflectometry

L. N. Koppel; L. Parobek

AIP Conf. Proc. 449, 469–473 (1998) https://doi.org/10.1063/1.56834

Abstract

View articletitled, Thin-film metrology by rapid x-ray reflectometry

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Energy-dispersive x-ray reflectivity and the measurement of thin film density for interlevel dielectric optimization

W. E. Wallace; C. K. Chiang; W. L. Wu

AIP Conf. Proc. 449, 475–477 (1998) https://doi.org/10.1063/1.56835

Abstract

View articletitled, Energy-dispersive x-ray reflectivity and the measurement of thin film density for interlevel dielectric optimization

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Next generation lithography—the real challenge

Karen H. Brown

AIP Conf. Proc. 449, 481–483 (1998) https://doi.org/10.1063/1.56909

Abstract

View articletitled, Next generation lithography—the real challenge

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A survey of advanced excimer optical imaging and lithography

Koichi Matsumoto; Kyoichi Suwa

AIP Conf. Proc. 449, 484–489 (1998) https://doi.org/10.1063/1.56910

Abstract

View articletitled, A survey of advanced excimer optical imaging and lithography

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An overview of CD metrology for advanced CMOS process development

Herschel Marchman

AIP Conf. Proc. 449, 491–501 (1998) https://doi.org/10.1063/1.56837

Abstract

View articletitled, An overview of CD metrology for advanced CMOS process development

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Overlay metrology: the systematic, the random and the ugly

Neal Sullivan; Jennifer Shin

AIP Conf. Proc. 449, 502–512 (1998) https://doi.org/10.1063/1.56838

Abstract

View articletitled, Overlay metrology: the systematic, the random and the ugly

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Metrology of image placement

Alexander Starikov

AIP Conf. Proc. 449, 513–535 (1998) https://doi.org/10.1063/1.56839

Abstract

View articletitled, Metrology of image placement

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Deep ultraviolet laser metrology for semiconductor photolithography

M. L. Dowell; C. L. Cromer; R. W. Leonhardt; T. R. Scott

AIP Conf. Proc. 449, 539–541 (1998) https://doi.org/10.1063/1.56840

Abstract

View articletitled, Deep ultraviolet laser metrology for semiconductor photolithography

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Metrology applications in lithography with variable angle spectroscopic ellipsometry

James N. Hilfiker; Ron Carpio; Ron A. Synowicki; John A. Woollam

AIP Conf. Proc. 449, 543–547 (1998) https://doi.org/10.1063/1.56841

Abstract

View articletitled, Metrology applications in lithography with variable angle spectroscopic ellipsometry

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Novel metrology for the DUV photolithography sequence

Nickhil Jakatdar; Xinhui Niu; Haolin Zhang; Junwei Bao; Costas Spanos

AIP Conf. Proc. 449, 548–552 (1998) https://doi.org/10.1063/1.56842

Abstract

View articletitled, Novel metrology for the DUV photolithography sequence

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At-wavelength interferometry of extreme ultraviolet lithographic optics

Sang Hun Lee; Patrick Naulleau; Kenneth Goldberg; Edita Tejnil; Hector Medecki; Cynthia Bresloff; Chang Chang; David Attwood; Jeffrey Bokor

AIP Conf. Proc. 449, 553–557 (1998) https://doi.org/10.1063/1.56843

Abstract

View articletitled, At-wavelength interferometry of extreme ultraviolet lithographic optics

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Assessing polysilicon linewidth variation using statistical metrology

N. Moorthy Muthukrishnan; Sharad Prasad

AIP Conf. Proc. 449, 559–561 (1998) https://doi.org/10.1063/1.56844

Abstract

View articletitled, Assessing polysilicon linewidth variation using statistical metrology

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Nanometrology using scanning probe microscopy and its application to resist patterns

M. Nagase; K. Kurihara; H. Namatsu; T. Makino

AIP Conf. Proc. 449, 562–566 (1998) https://doi.org/10.1063/1.56911

Abstract

View articletitled, Nanometrology using scanning probe microscopy and its application to resist patterns

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Intermittent-contact scanning capacitance microscopy imaging and modeling for overlay metrology

S. Mayo; J. J. Kopanski; W. F. Guthrie

AIP Conf. Proc. 449, 567–572 (1998) https://doi.org/10.1063/1.56912

Abstract

View articletitled, Intermittent-contact scanning capacitance microscopy imaging and modeling for overlay metrology

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Optimal feedforward recipe adjustment for CD control in semiconductor patterning

Steve Ruegsegger; Aaron Wagner; Jim Freudenberg; Dennis Grimard

AIP Conf. Proc. 449, 573–577 (1998) https://doi.org/10.1063/1.56845

Abstract

View articletitled, Optimal feedforward recipe adjustment for CD control in semiconductor patterning

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A proposed holistic approach to on-chip, off-chip, test, and package interconnections

Dirk J. Bartelink

AIP Conf. Proc. 449, 581–590 (1998) https://doi.org/10.1063/1.56913

Abstract

View articletitled, A proposed holistic approach to on-chip, off-chip, test, and package interconnections

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Analytical challenges in next generation packaging/assembly

Rajen Dias; Deepak Goyal; Shalabh Tandon; Gay Samuelson

AIP Conf. Proc. 449, 591–597 (1998) https://doi.org/10.1063/1.56847

Abstract

View articletitled, Analytical challenges in next generation packaging/assembly

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Trends in nondestructive imaging of IC packages

T. M. Moore; C. D. Hartfield

AIP Conf. Proc. 449, 598–604 (1998) https://doi.org/10.1063/1.56915

Abstract

View articletitled, Trends in nondestructive imaging of IC packages

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Interconnection continuity test for packaged functional modules

Jan Obrzut

AIP Conf. Proc. 449, 607–609 (1998) https://doi.org/10.1063/1.56914

Abstract

View articletitled, Interconnection continuity test for packaged functional modules

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Scanning acoustic microscopy stress measurements in electronic packaging

Eva Drescher-Krasicka; Thomas M. Moore; Cheryl D. Hartfield

AIP Conf. Proc. 449, 611–613 (1998) https://doi.org/10.1063/1.56848

Abstract

View articletitled, Scanning acoustic microscopy stress measurements in electronic packaging

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One- and two-dimensional dopant/carrier profiling for ULSI

W. Vandervorst; T. Clarysse; P. De Wolf; T. Trenkler; T. Hantschel; R. Stephenson; T. Janssens

AIP Conf. Proc. 449, 617–640 (1998) https://doi.org/10.1063/1.56849

Abstract

View articletitled, One- and two-dimensional dopant/carrier profiling for ULSI

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Overview of optical microscopy and optical microspectroscopy

Joel W. Ager, III

AIP Conf. Proc. 449, 641–652 (1998) https://doi.org/10.1063/1.56850

Abstract

View articletitled, Overview of optical microscopy and optical microspectroscopy

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Advanced SEM imaging

D. C. Joy; D. E. Newbury

AIP Conf. Proc. 449, 653–666 (1998) https://doi.org/10.1063/1.56851

Abstract

View articletitled, Advanced SEM imaging

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Transmission electron microscopy: A critical analytical tool for ULSI technology

David Venables; David W. Susnitzky; A. John Mardinly

AIP Conf. Proc. 449, 667–675 (1998) https://doi.org/10.1063/1.56853

Abstract

View articletitled, Transmission electron microscopy: A critical analytical tool for ULSI technology

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Microscopy and spectroscopy characterization of small defects on 200mm wafers

C. R. Brundle; Yuri Uritsky; Patrick Kinney; Walter Huber; Andrew Green

AIP Conf. Proc. 449, 677–690 (1998) https://doi.org/10.1063/1.56854

Abstract

View articletitled, Microscopy and spectroscopy characterization of small defects on 200mm wafers

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X-ray microscopy; an emerging technique for semiconductor microstructure characterization

H. A. Padmore

AIP Conf. Proc. 449, 691–695 (1998) https://doi.org/10.1063/1.56855

Abstract

View articletitled, X-ray microscopy; an emerging technique for semiconductor microstructure characterization

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Analysis of molecular adsorbates on Si surfaces with thermal desorption spectroscopy

Norikuni Yabumoto

AIP Conf. Proc. 449, 696–701 (1998) https://doi.org/10.1063/1.56895

Abstract

View articletitled, Analysis of molecular adsorbates on Si surfaces with thermal desorption spectroscopy

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Wet chemical analysis for the semiconductor industry—a total view

Marjorie K. Balazs

AIP Conf. Proc. 449, 703–712 (1998) https://doi.org/10.1063/1.56916

Abstract

View articletitled, Wet chemical analysis for the semiconductor industry—a total view

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Re-examination of 2D dopant profiling needs

Michael Duane

AIP Conf. Proc. 449, 715–719 (1998) https://doi.org/10.1063/1.56856

Abstract

View articletitled, Re-examination of 2D dopant profiling needs

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Two dimensional dopant diffusion study by scanning capacitance microscopy and TSUPREM IV process simulation

J. Kim; J. S. McMurray; C. C. Williams; J. Slinkman

AIP Conf. Proc. 449, 720–724 (1998) https://doi.org/10.1063/1.56857

Abstract

View articletitled, Two dimensional dopant diffusion study by scanning capacitance microscopy and TSUPREM IV process simulation

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Comparison of measured and modeled scanning capacitance microscopy images across p-n junctions

J. J. Kopanski; J. F. Marchiando; J. Albers; B. G. Rennex

AIP Conf. Proc. 449, 725–729 (1998) https://doi.org/10.1063/1.56858

Abstract

View articletitled, Comparison of measured and modeled scanning capacitance microscopy images across p-n junctions

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Inverse modeling applied to Scanning Capacitance Microscopy for improved spatial resolution and accuracy

J. S. McMurray; C. C. Williams

AIP Conf. Proc. 449, 731–735 (1998) https://doi.org/10.1063/1.56917

Abstract

View articletitled, Inverse modeling applied to Scanning Capacitance Microscopy for improved spatial resolution and accuracy

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Silicon surface preparation for two-dimensional dopant characterization

V. A. Ukraintsev; F. R. Potts; R. M. Wallace; L. K. Magel; Hal Edwards; M.-C. Chang

AIP Conf. Proc. 449, 736–740 (1998) https://doi.org/10.1063/1.56918

Abstract

View articletitled, Silicon surface preparation for two-dimensional dopant characterization

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Dopant characterization round-robin study performed on two-dimensional test structures fabricated at Texas Instruments

AIP Conf. Proc. 449, 741–745 (1998) https://doi.org/10.1063/1.56919

Abstract

View articletitled, Dopant characterization round-robin study performed on two-dimensional test structures fabricated at Texas Instruments

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Application of scanning probe microscopy nano-indentation towards nanomechanical characterization of polymer films

Jin Xu; Joe Hooker; Indira Adhihetty; Paddy Padmanabhan; Tom Remmel; Wei Chen

AIP Conf. Proc. 449, 747–751 (1998) https://doi.org/10.1063/1.56860

Abstract

View articletitled, Application of scanning probe microscopy nano-indentation towards nanomechanical characterization of polymer films

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Surface and tip characterization for quantitative two dimensional dopant profiling by scanning capacitance microscopy

V. V. Zavyalov; J. S. McMurray; C. C. Williams

AIP Conf. Proc. 449, 753–756 (1998) https://doi.org/10.1063/1.56861

Abstract

View articletitled, Surface and tip characterization for quantitative two dimensional dopant profiling by scanning capacitance microscopy

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Ultra-shallow junction measurements: A review of SIMS approaches for annealed and processed wafers

Gary R. Mount; Stephen P. Smith; Charles J. Hitzman; Victor K. F. Chia; Charles W. Magee

AIP Conf. Proc. 449, 757–765 (1998) https://doi.org/10.1063/1.56862

Abstract

View articletitled, Ultra-shallow junction measurements: A review of SIMS approaches for annealed and processed wafers

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Two dimensional profiling of ultra-shallow implants using SIMS

G. A. Cooke; R. Gibbons; M. G. Dowsett

AIP Conf. Proc. 449, 766–770 (1998) https://doi.org/10.1063/1.56863

Abstract

View articletitled, Two dimensional profiling of ultra-shallow implants using SIMS

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Is ultra shallow analysis possible using SIMS?

D. P. Chu; M. G. Dowsett; T. J. Ormsby; G. A. Cooke

AIP Conf. Proc. 449, 771–775 (1998) https://doi.org/10.1063/1.56864

Abstract

View articletitled, Is ultra shallow analysis possible using SIMS?

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Ultra-shallow junction depth profile analysis using TOF-SIMS and TXRF

K. Iltgen; B. MacDonald; O. Brox; A. Benninghoven; C. Weiss; T. Hossain; E. Zschech

AIP Conf. Proc. 449, 777–781 (1998) https://doi.org/10.1063/1.56921

Abstract

View articletitled, Ultra-shallow junction depth profile analysis using TOF-SIMS and TXRF

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Fast low energy SIMS depth profiling for ULSI applications

S. B. Patel; J. L. Maul

AIP Conf. Proc. 449, 782–785 (1998) https://doi.org/10.1063/1.56865

Abstract

View articletitled, Fast low energy SIMS depth profiling for ULSI applications

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Resonance ionization mass spectrometry—applications to surface analyses and depth profiles of semiconductors

T. J. Whitaker; K. F. Willey; W. R. Garrett; H. F. Arlinghaus

AIP Conf. Proc. 449, 786–789 (1998) https://doi.org/10.1063/1.56866

Abstract

View articletitled, Resonance ionization mass spectrometry—applications to surface analyses and depth profiles of semiconductors

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Identification, simulation and avoidance of artifacts in ultra-shallow depth profiling by secondary ion mass spectrometry

K. Wittmaack; S. B. Patel; S. F. Corcoran

AIP Conf. Proc. 449, 791–795 (1998) https://doi.org/10.1063/1.56920

Abstract

View articletitled, Identification, simulation and avoidance of artifacts in ultra-shallow depth profiling by secondary ion mass spectrometry

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High-resolution microcalorimeter energy-dispersive spectrometer for x-ray microanalysis and particle analysis

D. A. Wollman; G. C. Hilton; K. D. Irwin; L. L. Dulcie; N. F. Bergren; Dale E. Newbury; Keung-Shan Woo; Benjamin Y. H. Liu; Alain C. Diebold; John M. Martinis

AIP Conf. Proc. 449, 799–804 (1998) https://doi.org/10.1063/1.56867

Abstract

View articletitled, High-resolution microcalorimeter energy-dispersive spectrometer for x-ray microanalysis and particle analysis

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Tungsten in-film defect characterization

Y. Uritsky; S. Ghanayem; V. Rana; R. Savoy; S. Yang; C. R. Brundle

AIP Conf. Proc. 449, 805–809 (1998) https://doi.org/10.1063/1.56868

Abstract

View articletitled, Tungsten in-film defect characterization

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Analysis of submicron defects using an SEM-Auger defect review tool

Kenton D. Childs; David G. Watson; Dennis F. Paul; Stephen P. Clough

AIP Conf. Proc. 449, 810–814 (1998) https://doi.org/10.1063/1.56922

Abstract

View articletitled, Analysis of submicron defects using an SEM-Auger defect review tool

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Polarized light scattering and its application to microroughness, particle, and defect detection

Thomas A. Germer

AIP Conf. Proc. 449, 815–818 (1998) https://doi.org/10.1063/1.56869

Abstract

View articletitled, Polarized light scattering and its application to microroughness, particle, and defect detection

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Accurate size measurement of monosize calibration spheres by differential mobility analysis

George W. Mulholland; Marco Fernandez

AIP Conf. Proc. 449, 819–823 (1998) https://doi.org/10.1063/1.56870

Abstract

View articletitled, Accurate size measurement of monosize calibration spheres by differential mobility analysis

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One step automated unpatterned wafer defect detection and classification

Lie Dou; Daniel Kesler; William Bruno; Charles Monjak; Jim Hunt

AIP Conf. Proc. 449, 824–828 (1998) https://doi.org/10.1063/1.56871

Abstract

View articletitled, One step automated unpatterned wafer defect detection and classification

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Mechanical characterization of thin films

David T. Read

AIP Conf. Proc. 449, 829–834 (1998) https://doi.org/10.1063/1.56872

Abstract

View articletitled, Mechanical characterization of thin films

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High sensitivity technique for measurement of thin film out-of-plane expansion

Chad R. Snyder; Frederick I. Mopsik

AIP Conf. Proc. 449, 835–838 (1998) https://doi.org/10.1063/1.56873

Abstract

View articletitled, High sensitivity technique for measurement of thin film out-of-plane expansion

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The study of silicon stepped surfaces as atomic force microscope calibration standards with a calibrated AFM at NIST

V. W. Tsai; T. Vorburger; R. Dixson; J. Fu; R. Köning; R. Silver; E. D. Williams

AIP Conf. Proc. 449, 839–842 (1998) https://doi.org/10.1063/1.56874

Abstract

View articletitled, The study of silicon stepped surfaces as atomic force microscope calibration standards with a calibrated AFM at NIST

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Tip characterization for scanning probe microscope width metrology

S. Dongmo; J. S. Villarrubia; S. N. Jones; T. B. Renegar; M. T. Postek; J. F. Song

AIP Conf. Proc. 449, 843–848 (1998) https://doi.org/10.1063/1.56876

Abstract

View articletitled, Tip characterization for scanning probe microscope width metrology

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Crystallographic characterization of interconnects by orientation mapping in the SEM

C. E. Kalnas; R. R. Keller; D. P. Field

AIP Conf. Proc. 449, 849–853 (1998) https://doi.org/10.1063/1.56877

Abstract

View articletitled, Crystallographic characterization of interconnects by orientation mapping in the SEM

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HRTEM as a metrology tool in ULSI processing

V. S. Kaushik; L. Prabhu; A. Anderson; J. Conner

AIP Conf. Proc. 449, 854–856 (1998) https://doi.org/10.1063/1.56878

Abstract

View articletitled, HRTEM as a metrology tool in ULSI processing

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Transmission electron microscopy investigation of titanium silicide thin films

A. F. Myers; E. B. Steel; L. M. Struck; H. I. Liu; J. A. Burns

AIP Conf. Proc. 449, 857–861 (1998) https://doi.org/10.1063/1.56879

Abstract

View articletitled, Transmission electron microscopy investigation of titanium silicide thin films

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Focused ion beam preparation for cross-sectional transmission electron microscopy investigation of the top surface of unpassivated or partially processed ULSI devices

H. Bender; P. Van Marcke; C. Drijbooms; P. Roussel

AIP Conf. Proc. 449, 863–867 (1998) https://doi.org/10.1063/1.56880

Abstract

View articletitled, Focused ion beam preparation for cross-sectional transmission electron microscopy investigation of the top surface of unpassivated or partially processed ULSI devices

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Plan view TEM sample preparation using the focused ion beam lift-out technique

F. A. Stevie; R. B. Irwin; T. L. Shofner; S. R. Brown; J. L. Drown; L. A. Giannuzzi

AIP Conf. Proc. 449, 868–872 (1998) https://doi.org/10.1063/1.56881

Abstract

View articletitled, Plan view TEM sample preparation using the focused ion beam lift-out technique

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X-ray photoemission electron microscopy for the study of semiconductor materials

Simone Anders; Thomas Stammler; Howard A. Padmore; Louis J. Terminello; Alan F. Jankowski; Joachim Stöhr; Javier Dı́az; Aline Cossy-Favre; Sangeet Singh

AIP Conf. Proc. 449, 873–877 (1998) https://doi.org/10.1063/1.56923

Abstract

View articletitled, X-ray photoemission electron microscopy for the study of semiconductor materials

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Neutron reflectometry for interfacial materials characterization

Eric K. Lin; Darrin J. Pochan; Rainer Kolb; Wen-li Wu; Sushil K. Satija

AIP Conf. Proc. 449, 879–882 (1998) https://doi.org/10.1063/1.56882

Abstract

View articletitled, Neutron reflectometry for interfacial materials characterization

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Recent developments in neutron depth profiling at NIST

G. P. Lamaze; H. H. Chen-Mayer; J. K. Langland

AIP Conf. Proc. 449, 883–886 (1998) https://doi.org/10.1063/1.56883

Abstract

View articletitled, Recent developments in neutron depth profiling at NIST

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The NIST surface analysis data center

C. J. Powell; J. R. Rumble, Jr.; D. M. Blakeslee; M. E. Dal-Favero; A. Jablonski; S. Tougaard

AIP Conf. Proc. 449, 887–891 (1998) https://doi.org/10.1063/1.56893

Abstract

View articletitled, The NIST surface analysis data center

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ULSI technology and materials: Quantitative answers by combined mass spectrometry surface techniques

M. Bersani; M. Fedrizzi; M. Sbetti; M. Anderle

AIP Conf. Proc. 449, 892–896 (1998) https://doi.org/10.1063/1.56924

Abstract

View articletitled, ULSI technology and materials: Quantitative answers by combined mass spectrometry surface techniques

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Wafer and bulk high-purity silicon trace element analysis at the Texas A&M University Nuclear Science Center

Daniel James Van Dalsem

AIP Conf. Proc. 449, 897–900 (1998) https://doi.org/10.1063/1.56925

Abstract

View articletitled, Wafer and bulk high-purity silicon trace element analysis at the Texas A&M University Nuclear Science Center

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Prospects for single atom sensitivity measurements of dopant levels in silicon

Richard R. Vanfleet; Mike Robertson; Mike McKay; John Silcox

AIP Conf. Proc. 449, 901–905 (1998) https://doi.org/10.1063/1.56884

Abstract

View articletitled, Prospects for single atom sensitivity measurements of dopant levels in silicon

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Novel analytical technique for on-line monitoring of trace heavy metals in corrosive chemicals

Stan Tsai; Samantha H. Tan; Anthony F. Flannery; Christopher W. Storment; Gregory T. A. Kovacs

AIP Conf. Proc. 449, 907–912 (1998) https://doi.org/10.1063/1.56885

Abstract

View articletitled, Novel analytical technique for on-line monitoring of trace heavy metals in corrosive chemicals

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NSOMS characterization of semiconductors and related materials

Ran Liu; Nigel Cave; Juan Carrejo; Wei Chen; Tan-Chen Lee; Thomas Remmel

AIP Conf. Proc. 449, 913–917 (1998) https://doi.org/10.1063/1.56926

Abstract

View articletitled, NSOMS characterization of semiconductors and related materials

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A microcontamination model for rotating disk chemical vapor deposition reactors

R. W. Davis; E. F. Moore; D. R. Burgess, Jr.; M. R. Zachariah

AIP Conf. Proc. 449, 918–922 (1998) https://doi.org/10.1063/1.56886

Abstract

View articletitled, A microcontamination model for rotating disk chemical vapor deposition reactors

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Properties of process gases determined accurately with acoustic techniques

John J. Hurly

AIP Conf. Proc. 449, 923–927 (1998) https://doi.org/10.1063/1.56888

Abstract

View articletitled, Properties of process gases determined accurately with acoustic techniques

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X-ray metrology for ULSI structures

D. K. Bowen; K. M. Matney; M. Wormington

AIP Conf. Proc. 449, 928–932 (1998) https://doi.org/10.1063/1.56889

Abstract

View articletitled, X-ray metrology for ULSI structures

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Flow measurements in semiconductor processing; New advances in measurement technology

S. A. Tison; A. M. Calabrese

AIP Conf. Proc. 449, 933–936 (1998) https://doi.org/10.1063/1.56890

Abstract

View articletitled, Flow measurements in semiconductor processing; New advances in measurement technology

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A self-controlled microcontrolled microvalve

C. A. Rich; K. D. Wise

AIP Conf. Proc. 449, 937–941 (1998) https://doi.org/10.1063/1.56891

Abstract

View articletitled, A self-controlled microcontrolled microvalve

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X-ray photoelectron spectroscopy, depth profiling, and elemental imaging of metal/polyimide interfaces of high density interconnect packages subjected to temperature and humidity

David R. Jung; Bola Ibidunni; Muhammad Ashraf

AIP Conf. Proc. 449, 943–947 (1998) https://doi.org/10.1063/1.56892

Abstract

View articletitled, X-ray photoelectron spectroscopy, depth profiling, and elemental imaging of metal/polyimide interfaces of high density interconnect packages subjected to temperature and humidity

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