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PRELIMINARY

Preface: SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics

AIP Conf. Proc. 2147, 010001 (2019) https://doi.org/10.1063/1.5123805

View articletitled, Preface: SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics

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ADVANCED CHARACTERIZATION AND SIMULATION

Impact of excess carrier profile in the luminescent emission and detection of silicon solar cells

Nekane Azkona; Federico Recart; Pedro Rodríguez; Aloña Otaegi; Vanesa Fano; José Rubén Gutiérrez; Juan Carlos Jimeno

AIP Conf. Proc. 2147, 020001 (2019) https://doi.org/10.1063/1.5123806

Abstract

View articletitled, Impact of excess carrier profile in the luminescent emission and detection of silicon solar cells

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Dependence of coil sensitivity on sample thickness in inductively coupled photoconductance measurements

Lachlan E. Black; Erwin Kessels

AIP Conf. Proc. 2147, 020002 (2019) https://doi.org/10.1063/1.5123807

Abstract

View articletitled, Dependence of coil sensitivity on sample thickness in inductively coupled photoconductance measurements

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GD-OES depth profiling and calibration of B doped dielectric layers

Fabian Geml; Josh Engelhardt; Jonathan Steffens; Luis-Frieder Reinalter; Gabriel Micard; Giso Hahn

AIP Conf. Proc. 2147, 020003 (2019) https://doi.org/10.1063/1.5123808

Abstract

View articletitled, GD-OES depth profiling and calibration of B doped dielectric layers

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An advanced LED-based setup enabling characterization of full-size modules at different temperatures and spectra

Jonathan Govaerts; Arvid van der Heide; Monica Aleman; Jef Poortmans

AIP Conf. Proc. 2147, 020004 (2019) https://doi.org/10.1063/1.5123809

Abstract

View articletitled, An advanced LED-based setup enabling characterization of full-size modules at different temperatures and spectra

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Impact of non-uniform carrier density on the determination of metal induced recombination losses

David Herrmann; Andreas Fell; Hannes Höffler; Sabrina Lohmüller; Andreas Wolf

AIP Conf. Proc. 2147, 020005 (2019) https://doi.org/10.1063/1.5123810

Abstract

View articletitled, Impact of non-uniform carrier density on the determination of metal induced recombination losses

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Accurate contact and contactless methods for emitter sheet resistance testing of PV wafers

Ferenc Korsós; Péter Tüttő; Ilias Saegh; Krisztián Kis-Szabó; Attila Tóth

AIP Conf. Proc. 2147, 020006 (2019) https://doi.org/10.1063/1.5123811

Abstract

View articletitled, Accurate contact and contactless methods for emitter sheet resistance testing of PV wafers

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A high-accuracy calibration method for temperature dependent photoluminescence imaging

Sissel Tind Kristensen; Shuai Nie; Marie Syre Wiig; Halvard Haug; Charly Berthod; Rune Strandberg; Ziv Hameiri

AIP Conf. Proc. 2147, 020007 (2019) https://doi.org/10.1063/1.5123812

Abstract

View articletitled, A high-accuracy calibration method for temperature dependent photoluminescence imaging

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Study of changes in PL spectrum from defects in PERC solar cells with respect to LeTID

Torbjørn Mehl; Tabea Luka; Dominik Lausch; Ingunn Burud; Espen Olsen

AIP Conf. Proc. 2147, 020008 (2019) https://doi.org/10.1063/1.5123813

Abstract

View articletitled, Study of changes in PL spectrum from defects in PERC solar cells with respect to LeTID

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Study of anomalous S-shape in current density-voltage characteristics of carrier selective contact molybdenum oxide and amorphous silicon based heterojunction silicon solar cells

Sapna Mudgal; Mrutyunjay Nayak; Sonpal Singh; Vamsi K. Komarala

AIP Conf. Proc. 2147, 020009 (2019) https://doi.org/10.1063/1.5123814

Abstract

View articletitled, Study of anomalous S-shape in current density-voltage characteristics of carrier selective contact molybdenum oxide and amorphous silicon based heterojunction silicon solar cells

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On the effects of the asymptotic behavior of local ideality factor for a two-diode model in silicon solar cells

Alona Otaegi; Vanesa Fano; Nekane Azkona; Eneko Cereceda; Lourdes Pérez; Pedro Rodríguez; Federico Recart; José Rubén Gutiérrez; Juan Carlos Jimeno

AIP Conf. Proc. 2147, 020010 (2019) https://doi.org/10.1063/1.5123815

Abstract

View articletitled, On the effects of the asymptotic behavior of local ideality factor for a two-diode model in silicon solar cells

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Evaluation of the non-uniformity of rear-side irradiance in outdoor mounted bifacial silicon PV modules

Ebrar Ozkalay; Juan Lopez-Garcia; Laura Pinero-Prieto; Ana Gracia-Amillo; Robert P. Kenny

AIP Conf. Proc. 2147, 020011 (2019) https://doi.org/10.1063/1.5123816

Abstract

View articletitled, Evaluation of the non-uniformity of rear-side irradiance in outdoor mounted bifacial silicon PV modules

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Re-evaluation of the SRH-parameters for the FeGa defect

Regina Post; Tim Niewelt; Wenjie Yang; Daniel Macdonald; Wolfram Kwapil; Martin C. Schubert

AIP Conf. Proc. 2147, 020012 (2019) https://doi.org/10.1063/1.5123817

Abstract

View articletitled, Re-evaluation of the SRH-parameters for the FeGa defect

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Powerful topographic analyzing method using fast Fourier transform for c-Si solar cells and advanced technologies

Karolien Saliou; Florian Hilt; Guillaume Fischer; Thibaud Hildebrandt; Pierre-Philippe Grand; Etienne Drahi

AIP Conf. Proc. 2147, 020013 (2019) https://doi.org/10.1063/1.5123818

Abstract

View articletitled, Powerful topographic analyzing method using fast Fourier transform for c-Si solar cells and advanced technologies

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Characterization of sputtered a-Si:H passivated silicon surface by temperature- and injection-dependent lifetime spectroscopy

Krishna Singh; Sourav Mandal; Sonpal Singh; Vamsi K. Komarala

AIP Conf. Proc. 2147, 020014 (2019) https://doi.org/10.1063/1.5123819

Abstract

View articletitled, Characterization of sputtered a-Si:H passivated silicon surface by temperature- and injection-dependent lifetime spectroscopy

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Injection resolved spatial lifetime mapping using photoluminescence

Daniel Skorka; Annika Zuschlag; Giso Hahn

AIP Conf. Proc. 2147, 020015 (2019) https://doi.org/10.1063/1.5123820

Abstract

View articletitled, Injection resolved spatial lifetime mapping using photoluminescence

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Lead free ohmic connections on large surface area Si solar cells

Eleftherios Skuras; Dimitrios F. Anagnostopoulos; Alexandros Kyriakou; Stefanos Papagiannis; Theodoros Makris; Konstantinos Tselios; Colin R. Stanley

AIP Conf. Proc. 2147, 020016 (2019) https://doi.org/10.1063/1.5123821

Abstract

View articletitled, Lead free ohmic connections on large surface area Si solar cells

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Edge recombination analysis of silicon solar cells using photoluminescence measurements

Hannah Stolzenburg; Andreas Fell; Florian Schindler; Wolfram Kwapil; Armin Richter; Puzant Baliozian; Martin C. Schubert

AIP Conf. Proc. 2147, 020017 (2019) https://doi.org/10.1063/1.5123822

Abstract

View articletitled, Edge recombination analysis of silicon solar cells using photoluminescence measurements

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Excess charge carrier injection densities in PERC solar cells at open-circuit voltage and maximum power point

Maksym Tratnikov; Matthias Müller

AIP Conf. Proc. 2147, 020018 (2019) https://doi.org/10.1063/1.5123823

Abstract

View articletitled, Excess charge carrier injection densities in PERC solar cells at open-circuit voltage and maximum power point

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Averaging the unaverageable: Defining a meaningful local series resistance for large-area silicon solar cells

Jan-Martin Wagner; Koundinya Upadhyayula; Jürgen Carstensen; Rainer Adelung

AIP Conf. Proc. 2147, 020019 (2019) https://doi.org/10.1063/1.5123824

Abstract

View articletitled, Averaging the unaverageable: Defining a meaningful local series resistance for large-area silicon solar cells

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Simulation of solar cell performance based on in the field measured ambience parameters

Gustav Wetzel; Jan Krügener; Robby Peibst; André Dietrich; Bernhard Nacke; H. Jörg Osten

AIP Conf. Proc. 2147, 020020 (2019) https://doi.org/10.1063/1.5123825

Abstract

View articletitled, Simulation of solar cell performance based on in the field measured ambience parameters

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Comparison of magnetic field imaging (MFI) and magnetic field simulation of silicon solar cells

Ulli Zeller; Dominik Lausch; Matthias Pander; Kai Kaufmann; Sebastian Slaby; Stephan Schoenfelder

AIP Conf. Proc. 2147, 020021 (2019) https://doi.org/10.1063/1.5123826

Abstract

View articletitled, Comparison of magnetic field imaging (MFI) and magnetic field simulation of silicon solar cells

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ADVANCED LIGHT MANAGEMENT

Impact of the oxygen content on the optoelectronic properties of the indium-tin-oxide based transparent electrodes for silicon heterojunction solar cells

Brahim Aïssa; Amir A. Abdallah; Yahya Zakaria; Maulid M. Kivambe; Ayman Samara; Akshath Raghu Shetty; Jean Cattin; Jan Haschke; Mathieu Boccard; Christophe Ballif

AIP Conf. Proc. 2147, 030001 (2019) https://doi.org/10.1063/1.5123827

Abstract

View articletitled, Impact of the oxygen content on the optoelectronic properties of the indium-tin-oxide based transparent electrodes for silicon heterojunction solar cells

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CARRIER SELECTIVE CONTACTS AND CONTACT FORMATION

TCO contacts on poly-Si layers: High and low temperature approaches to maintain passivation and contact properties

Elise Bruhat; Thibaut Desrues; Danièle Blanc-Pélissier; Benoît Martel; Raphaël Cabal; Sébastien Dubois

AIP Conf. Proc. 2147, 040001 (2019) https://doi.org/10.1063/1.5123828

Abstract

View articletitled, TCO contacts on poly-Si layers: High and low temperature approaches to maintain passivation and contact properties

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Screen printed Ag contacts for n-type polysilicon passivated contacts

Aditya Chaudhary; Jan Hoß; Jan Lossen; René van Swaaij; Miro Zeman

AIP Conf. Proc. 2147, 040002 (2019) https://doi.org/10.1063/1.5123829

Abstract

View articletitled, Screen printed Ag contacts for n-type polysilicon passivated contacts

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P-type SiO_x front emitters for Si heterojunction solar cells

Marco Della Noce; Eugenia Bobeico; Laura Lancellotti; Lucia V. Mercaldo; Iurie Usatii; Paola Delli Veneri

AIP Conf. Proc. 2147, 040003 (2019) https://doi.org/10.1063/1.5123830

Abstract

View articletitled, P-type SiOx front emitters for Si heterojunction solar cells

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Characterization of absorption losses in rear side n-type polycrystalline silicon passivating contacts

Meriç Fırat; María Recamán Payo; Filip Duerinckx; Jan-Marc Luchies; Martijn Lenes; Jef Poortmans

AIP Conf. Proc. 2147, 040004 (2019) https://doi.org/10.1063/1.5123831

Abstract

View articletitled, Characterization of absorption losses in rear side n-type polycrystalline silicon passivating contacts

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Establishing the “native oxide barrier layer for selective electroplated” metallization for bifacial silicon heterojunction solar cells

Thibaud Hatt; Jonas Bartsch; Sven Kluska; Markus Glatthaar

AIP Conf. Proc. 2147, 040005 (2019) https://doi.org/10.1063/1.5123832

Abstract

View articletitled, Establishing the “native oxide barrier layer for selective electroplated” metallization for bifacial silicon heterojunction solar cells

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Study of non fire-through metallization processes of boron-doped polysilicon passivated contacts for high efficiency silicon solar cells

Maxim Hayes; Benoit Martel; Sébastien Dubois; Audrey Morisset; Olivier Palais

AIP Conf. Proc. 2147, 040006 (2019) https://doi.org/10.1063/1.5123833

Abstract

View articletitled, Study of non fire-through metallization processes of boron-doped polysilicon passivated contacts for high efficiency silicon solar cells

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Sputtering of silicon thin films for passivated contacts

Jan Hoß; Jens Baumann; Markus Berendt; Uwe Graupner; René Köhler; Jan Lossen; Martin Thumsch; Eric Schneiderlöchner

AIP Conf. Proc. 2147, 040007 (2019) https://doi.org/10.1063/1.5123834

Abstract

View articletitled, Sputtering of silicon thin films for passivated contacts

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Effect of hydrogen addition on bulk properties of sputtered indium tin oxide thin films

Nimish Juneja; Leonard Tutsch; Frank Feldmann; Andreas Fischer; Martin Bivour; Anamaria Moldovan; Martin Hermle

AIP Conf. Proc. 2147, 040008 (2019) https://doi.org/10.1063/1.5123835

Abstract

View articletitled, Effect of hydrogen addition on bulk properties of sputtered indium tin oxide thin films

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Comparison of low damage sputter deposition techniques to enable the application of very thin a-Si passivation films

Volker Linss; Martin Bivour; Hiroshi Iwata; Kai Ortner

AIP Conf. Proc. 2147, 040009 (2019) https://doi.org/10.1063/1.5123836

Abstract

View articletitled, Comparison of low damage sputter deposition techniques to enable the application of very thin a-Si passivation films

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Hydrogen passivation effect on p-type poly-Si/SiO_x stack for crystalline silicon solar cells

Mickaël Lozac’h; Shota Nunomura; Hiroshi Umishio; Takuya Matsui; Koji Matsubara

AIP Conf. Proc. 2147, 040010 (2019) https://doi.org/10.1063/1.5123837

Abstract

View articletitled, Hydrogen passivation effect on p-type poly-Si/SiOx stack for crystalline silicon solar cells

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Improvement of PERC solar cell efficiency based on laser-doped selective emitter

Fengxiu Miao; Shude Zhang; Weifei Lian; Baoxing Zhao; Qingzhu Wei

AIP Conf. Proc. 2147, 040011 (2019) https://doi.org/10.1063/1.5123838

Abstract

View articletitled, Improvement of PERC solar cell efficiency based on laser-doped selective emitter

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SiOxNy:B layers for ex-situ doping of hole-selective poly silicon contacts: A passivation study

Audrey Morisset; Raphaël Cabal; Valentin Giglia; Bernadette Grange; José Alvarez; Marie-Estelle Gueunier-Farret; Sébastien Dubois; Jean-Paul Kleider

AIP Conf. Proc. 2147, 040012 (2019) https://doi.org/10.1063/1.5123839

Abstract

View articletitled, SiOxNy:B layers for ex-situ doping of hole-selective poly silicon contacts: A passivation study

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Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers

Matthias Bernd Mörtter; Josh Engelhardt; Giso Hahn; Barbara Terheiden

AIP Conf. Proc. 2147, 040013 (2019) https://doi.org/10.1063/1.5123840

Abstract

View articletitled, Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers

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Electrical characterization and defect states analysis of Ag/ITO/MoO_x/n-Si/LiF_x/Al carrier selective contact solar cells processed at room-temperature

Mrutyunjay Nayak; Sapna Mudgal; Sourav Mandal; Sonpal Singh; Vamsi Krishna Komarala

AIP Conf. Proc. 2147, 040014 (2019) https://doi.org/10.1063/1.5123841

Abstract

View articletitled, Electrical characterization and defect states analysis of Ag/ITO/MoOx/n-Si/LiFx/Al carrier selective contact solar cells processed at room-temperature

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Evaluation of the burnout phase of the contact firing process for industrial PERC

Daniel Ourinson; Gernot Emanuel; Andreas Lorenz; Florian Clement; Stefan W. Glunz

AIP Conf. Proc. 2147, 040015 (2019) https://doi.org/10.1063/1.5123842

Abstract

View articletitled, Evaluation of the burnout phase of the contact firing process for industrial PERC

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Study on the interfacial oxide in passivating contacts

Jana-Isabelle Polzin; Frank Feldmann; Bernd Steinhauser; Martin Hermle; Stefan W. Glunz

AIP Conf. Proc. 2147, 040016 (2019) https://doi.org/10.1063/1.5123843

Abstract

View articletitled, Study on the interfacial oxide in passivating contacts

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Evaluation of localized vertical current formation in carrier selective passivation layers of silicon solar cells by conductive AFM

Susanne Richter; Yevgeniya Larionova; Stephan Großer; Matthias Menzel; Henning Schulte-Huxel; Robby Peibst; Rolf Brendel; Christian Hagendorf

AIP Conf. Proc. 2147, 040017 (2019) https://doi.org/10.1063/1.5123844

Abstract

View articletitled, Evaluation of localized vertical current formation in carrier selective passivation layers of silicon solar cells by conductive AFM

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Compensation of the sputter damage during a-Si deposition for poly-Si/SiO_x passivating contacts by ex-situ p-doping

Jonathan Linke; Johannes Rinder; Giso Hahn; Barbara Terheiden

AIP Conf. Proc. 2147, 040018 (2019) https://doi.org/10.1063/1.5123845

Abstract

View articletitled, Compensation of the sputter damage during a-Si deposition for poly-Si/SiOx passivating contacts by ex-situ p-doping

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Fine line Al printing on narrow point contact opening for front side metallization

Kosuke Tsuji; Shota Suzuki; Naoya Morishita; Takashi Kuroki; Masahiro Nakahara; Marwan Dhamrin; Zih-Wei Peng; Thomas Buck; Noritaka Usami

AIP Conf. Proc. 2147, 040019 (2019) https://doi.org/10.1063/1.5123846

Abstract

View articletitled, Fine line Al printing on narrow point contact opening for front side metallization

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Ex situ phosphorus doped polysilicon films by plasma immersion ion implantation (PIII): Controlling and simplifying passivated contacts integration

Antoine Veau; Thibaut Desrues; Audrey Morisset; Frank Torregrosa; Laurent Roux; Anne Kaminski-Cachopo; Quentin Rafhay; Sébastien Dubois

AIP Conf. Proc. 2147, 040021 (2019) https://doi.org/10.1063/1.5123848

Abstract

View articletitled, Ex situ phosphorus doped polysilicon films by plasma immersion ion implantation (PIII): Controlling and simplifying passivated contacts integration

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A simple method with analytical model to extract heterojunction solar cell series resistance components and to extract the A-Si:H(i/p) to transparent conductive oxide contact resistivity

Er-Chien Wang; Anna B. Morales-Vilches; Sebastian Neubert; Alexandros Cruz; Rutger Schlatmann; Bernd Stannowski

AIP Conf. Proc. 2147, 040022 (2019) https://doi.org/10.1063/1.5123849

Abstract

View articletitled, A simple method with analytical model to extract heterojunction solar cell series resistance components and to extract the A-Si:H(i/p) to transparent conductive oxide contact resistivity

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CLEANING, ETCHING, SURFACE MORPHOLOGY AND SURFACE PASSIVATION

Improved passivation for SHJ utilizing dual intrinsic a-Si:H layers on an inline PECVD tool

Lara Bodlak; Jan Temmler; Anamaria Moldovan; Jochen Rentsch

AIP Conf. Proc. 2147, 050001 (2019) https://doi.org/10.1063/1.5123850

Abstract

View articletitled, Improved passivation for SHJ utilizing dual intrinsic a-Si:H layers on an inline PECVD tool

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Impact of vacuum grippers utilized for automated wafer handling prior a-Si passivation for silicon heterojunction solar cells

Andreas Fischer; Anamaria Moldovan; Jochen Rentsch

AIP Conf. Proc. 2147, 050002 (2019) https://doi.org/10.1063/1.5123851

Abstract

View articletitled, Impact of vacuum grippers utilized for automated wafer handling prior a-Si passivation for silicon heterojunction solar cells

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Stability of the surface passivation properties of atomic layer deposited aluminum oxide in damp heat conditions

Ismo T. S. Heikkinen; George Koutsourakis; Sebastian Wood; Ville Vähänissi; Fernando A. Castro; Hele Savin

AIP Conf. Proc. 2147, 050003 (2019) https://doi.org/10.1063/1.5123852

Abstract

View articletitled, Stability of the surface passivation properties of atomic layer deposited aluminum oxide in damp heat conditions

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Composition limited hydrogen effusion rate of a-SiN_x:H passivation stack

Sahar Jafari; Jens Hirsch; Dominik Lausch; Marco John; Norbert Bernhard; Sylke Meyer

AIP Conf. Proc. 2147, 050004 (2019) https://doi.org/10.1063/1.5123853

Abstract

View articletitled, Composition limited hydrogen effusion rate of a-SiNx:H passivation stack

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Phosphorus gettering of impurities at low-temperature annealing for enhancing the performance of p-type PERC

Supawan Joonwichien; Yasuhiro Kida; Masaaki Moriya; Satoshi Utsunomiya; Katsuhiko Shirasawa; Hidetaka Takato

AIP Conf. Proc. 2147, 050005 (2019) https://doi.org/10.1063/1.5123854

Abstract

View articletitled, Phosphorus gettering of impurities at low-temperature annealing for enhancing the performance of p-type PERC

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Silicon films for heterojunction solar cells by hot-wire CVD

Madeleine Justianto; Tino Harig; Markus Höfer; Volker Sittinger

AIP Conf. Proc. 2147, 050006 (2019) https://doi.org/10.1063/1.5123855

Abstract

View articletitled, Silicon films for heterojunction solar cells by hot-wire CVD

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Numerical simulation of an ozone-based wet-chemical etching

Lena Mohr; Tobias Krick; Martin Zimmer; Andreas Fischer; Anamaria Moldovan

AIP Conf. Proc. 2147, 050007 (2019) https://doi.org/10.1063/1.5123856

Abstract

View articletitled, Numerical simulation of an ozone-based wet-chemical etching

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Critical interface: Poly-silicon to tunneling SiO₂ for passivated contact performance

Bill Nemeth; Steve P. Harvey; David L. Young; Matthew R. Page; Vincenzo La Salvia; Dawn Findley; Abhijit Kale; San Theingi; Paul Stradins

AIP Conf. Proc. 2147, 050008 (2019) https://doi.org/10.1063/1.5123857

Abstract

View articletitled, Critical interface: Poly-silicon to tunneling SiO2 for passivated contact performance

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Characterization of atomic layer deposited alumina thin films on black silicon textures using helium ion microscopy

Tudor E. Scheul; Edris Khorani; Tasmiat Rahman; Stuart A. Boden

AIP Conf. Proc. 2147, 050009 (2019) https://doi.org/10.1063/1.5123858

Abstract

View articletitled, Characterization of atomic layer deposited alumina thin films on black silicon textures using helium ion microscopy

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Industrial demonstration of 18.5% maximum efficiency inline-diffused additive-free acid-textured DWS multicrystalline silicon solar cells

K. P. Sreejith; Ashok Kumar Sharma; Sandeep Kumbhar; Anzar Gani; D. N. Singh; Anil Kottantharayil; Prabir Kanti Basu

AIP Conf. Proc. 2147, 050010 (2019) https://doi.org/10.1063/1.5123859

Abstract

View articletitled, Industrial demonstration of 18.5% maximum efficiency inline-diffused additive-free acid-textured DWS multicrystalline silicon solar cells

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Low-temperature silicon surface passivation for bulk lifetime studies based on Corona-charged Al₂O₃

Boris A. Veith-Wolf; Jan Schmidt

AIP Conf. Proc. 2147, 050011 (2019) https://doi.org/10.1063/1.5123860

Abstract

View articletitled, Low-temperature silicon surface passivation for bulk lifetime studies based on Corona-charged Al2O3

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HIGH AND RECORD EFFICIENCY DEVICES

PERC+ solar cells with screen-printed dashed Ag front contacts

Martin Rudolph; Christian Kruse; Helge Wolter; Bettina Wolpensinger; Ulrike Baumann; Sonja Bräunig; Melanie Ripke; Tom Falcon; Rolf Brendel; Thorsten Dullweber

AIP Conf. Proc. 2147, 060001 (2019) https://doi.org/10.1063/1.5123861

Abstract

View articletitled, PERC+ solar cells with screen-printed dashed Ag front contacts

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JUNCTION FORMATION

Role of thermal SiO₂ on passivation of highly doped layer

Amir Dastgheib-Shirazi; Giso Hahn; Barbara Terheiden

AIP Conf. Proc. 2147, 070001 (2019) https://doi.org/10.1063/1.5123862

Abstract

View articletitled, Role of thermal SiO2 on passivation of highly doped layer

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Laser doping from as-deposited CVD layers for high-efficiency crystalline silicon solar cells

Josh Engelhardt; Hermann Kromer; Giso Hahn; Barbara Terheiden

AIP Conf. Proc. 2147, 070002 (2019) https://doi.org/10.1063/1.5123863

Abstract

View articletitled, Laser doping from as-deposited CVD layers for high-efficiency crystalline silicon solar cells

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A novel approach for the evaluation of a phosphorus diffusion design of experiment

Gerd Fischer; Amir Dastgheib-Shirazi; Barbara Terheiden; Matthias Müller

AIP Conf. Proc. 2147, 070003 (2019) https://doi.org/10.1063/1.5123864

Abstract

View articletitled, A novel approach for the evaluation of a phosphorus diffusion design of experiment

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Comparison of laser-doped emitters from as-deposited and thermally diffused APCVD doping glasses on silicon substrates

Matthias Heilig; Josh Engelhardt; Giso Hahn; Barbara Terheiden

AIP Conf. Proc. 2147, 070004 (2019) https://doi.org/10.1063/1.5123865

Abstract

View articletitled, Comparison of laser-doped emitters from as-deposited and thermally diffused APCVD doping glasses on silicon substrates

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Towards all screen printed back-contact back-junction silicon solar cells

Jonas D. Huyeng; Raphael Efinger; David Bruge; Alma Spribille; Andreas Wolf; Roman Keding; Oliver Doll; Florian Clement

AIP Conf. Proc. 2147, 070005 (2019) https://doi.org/10.1063/1.5123866

Abstract

View articletitled, Towards all screen printed back-contact back-junction silicon solar cells

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MODULE PROCESSING AND MATERIALS

Overlap modules: A unique cell layup using smart wire connection technology

Pierre Papet; Simon Hänni; Ludovic Andreetta; Till Kossler; Damien Lachenal; Boris Legradic; Derk Bätzner; Walter Frammelsberger; Robert Kramer; Niels Holm; Bénédicte Bonnet-Eymard; Benjamin Strahm

AIP Conf. Proc. 2147, 080001 (2019) https://doi.org/10.1063/1.5123867

Abstract

View articletitled, Overlap modules: A unique cell layup using smart wire connection technology

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Woven multi-ribbon interconnection for back-contact cells: Extending the functionality of the encapsulant

Rik Van Dyck; Tom Borgers; Jonathan Govaerts; Eszter Voroshazi; Aart Willem Van Vuure; Jef Poortmans

AIP Conf. Proc. 2147, 080002 (2019) https://doi.org/10.1063/1.5123868

Abstract

View articletitled, Woven multi-ribbon interconnection for back-contact cells: Extending the functionality of the encapsulant

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MODULE RELIABILITY AND PRODUCTION YIELD

Stability investigations of Cz-PERC modules during damp heat testing and transport: The impact of the boron-oxygen defect

Friederike Kersten; Felix Frühauf; Ronny Lantzsch; Matthias Schütze; Christian Taubitz; Fabian Fertig; Martin Schaper; Jörg W. Müller

AIP Conf. Proc. 2147, 090001 (2019) https://doi.org/10.1063/1.5123869

Abstract

View articletitled, Stability investigations of Cz-PERC modules during damp heat testing and transport: The impact of the boron-oxygen defect

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Influence of cell packaging and design parameters on thermo-mechanical reliability of fingers in crystalline silicon photovoltaic modules

Sagarika Kumar; Rajesh Gupta

AIP Conf. Proc. 2147, 090002 (2019) https://doi.org/10.1063/1.5123870

Abstract

View articletitled, Influence of cell packaging and design parameters on thermo-mechanical reliability of fingers in crystalline silicon photovoltaic modules

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Analysis of shingle interconnections in solar modules by scanning acoustic microscopy

Laila Veríssimo Mesquita; Nils Klasen; Esther Fokuhl; Daniel Philipp; Luciana Pitta Bauermann

AIP Conf. Proc. 2147, 090003 (2019) https://doi.org/10.1063/1.5123871

Abstract

View articletitled, Analysis of shingle interconnections in solar modules by scanning acoustic microscopy

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Estimation of most frequent operating conditions of different technology silicon photovoltaic module in India using IEC 61853-1 approach

Humaid Mohammed; Rajesh Gupta; Oruganti Sastry; Brinchi Bora; Dhiraj Magare; Yogesh Singh; Sagarika Kumar

AIP Conf. Proc. 2147, 090004 (2019) https://doi.org/10.1063/1.5123872

Abstract

View articletitled, Estimation of most frequent operating conditions of different technology silicon photovoltaic module in India using IEC 61853-1 approach

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Influence of soiling and moisture ingress on long term PID susceptibility of photovoltaic modules

Volker Naumann; Klemens Ilse; Matthias Pander; Johanna Tröndle; Kai Sporleder; Christian Hagendorf

AIP Conf. Proc. 2147, 090005 (2019) https://doi.org/10.1063/1.5123873

Abstract

View articletitled, Influence of soiling and moisture ingress on long term PID susceptibility of photovoltaic modules

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NPV WORKSHOP

693 mV V_OC industrial screen-printed n-PERT rear junction solar cells with stable efficiency beyond 22%

Zih-Wei Peng; Thomas Buck; Lejo J. Koduvelikulathu; Joris Libal; Valentin D. Mihailetchi; Radovan Kopecek

AIP Conf. Proc. 2147, 100001 (2019) https://doi.org/10.1063/1.5123874

Abstract

View articletitled, 693 mV VOC industrial screen-printed n-PERT rear junction solar cells with stable efficiency beyond 22%

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Statistical analysis of structure loss in Czochralski silicon growth

Øyvind S. Sortland; Moez Jomâa; Mohammed M’Hamdi; Eivind J. Øvrelid; Marisa Di Sabatino

AIP Conf. Proc. 2147, 100002 (2019) https://doi.org/10.1063/1.5123875

Abstract

View articletitled, Statistical analysis of structure loss in Czochralski silicon growth

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Impact of electrical shading loss suppression on interdigitated-back-contact Si solar cells with screen printing metallization concepts

Tomihisa Tachibana; Toshimitsu Mochizuki; Katsuhiko Shirasawa; Hidetaka Takato

AIP Conf. Proc. 2147, 100003 (2019) https://doi.org/10.1063/1.5123876

Abstract

View articletitled, Impact of electrical shading loss suppression on interdigitated-back-contact Si solar cells with screen printing metallization concepts

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PROCESS INTEGRATION AND LOW-COST MANUFACTURING

Adaptation of the industrial PERC solar cell process chain to plated Ni/Cu/Ag front contact metallization

Norbert Bay; Stephen Fox; Peng Ren; John Burschik; Ulrich Jäger; Holger Kühnlein; Michael Passig; Damian Pysch; Markus Sieber; Sabrina Lohmüller; Elmar Lohmüller; Andreas Wolf; Bruce Lee

AIP Conf. Proc. 2147, 110001 (2019) https://doi.org/10.1063/1.5123877

Abstract

View articletitled, Adaptation of the industrial PERC solar cell process chain to plated Ni/Cu/Ag front contact metallization

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Al fire through contacts for p-type bifacial PERC devices

Tobias Fellmeth; Daniel Ourinson; Tim Riebe; Max Pospischil; Florian Clement; Kosuke Tsuji; Suzuki Shota; Marwan Dhamrin

AIP Conf. Proc. 2147, 110002 (2019) https://doi.org/10.1063/1.5123878

Abstract

View articletitled, Al fire through contacts for p-type bifacial PERC devices

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Efficiency improvement of bifacial PERC solar cell based on the optimization of rear structure

Dangping Hu; Shude Zhang; Weifei Lian; Jinyi Wang; Zhichun Ni; Qingzhu Wei

AIP Conf. Proc. 2147, 110003 (2019) https://doi.org/10.1063/1.5123879

Abstract

View articletitled, Efficiency improvement of bifacial PERC solar cell based on the optimization of rear structure

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Optimization of boron, phosphorus, carbon extraction from metallurgical-grade silicon

Sergey M. Karabanov; Andrey A. Trubitsyn; Dmitriy V. Suvorov; Dmitriy Yu. Tarabrin; Oleg A. Belyakov; Andrey S. Karabanov; Evgeniy V. Slivkin; Andrey E. Serebryakov

AIP Conf. Proc. 2147, 110004 (2019) https://doi.org/10.1063/1.5123880

Abstract

View articletitled, Optimization of boron, phosphorus, carbon extraction from metallurgical-grade silicon

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Inline deposited PassDop layers for rear side passivation and contacting of p-type c-Si PERL solar cells with high bifaciality

Mohammad Hassan Norouzi; Pierre Saint-Cast; Elmar Lohmüller; Sabrina Lohmüller; Bernd Steinhauser; Andreas Wolf; Marc Hofmann

AIP Conf. Proc. 2147, 110005 (2019) https://doi.org/10.1063/1.5123881

Abstract

View articletitled, Inline deposited PassDop layers for rear side passivation and contacting of p-type c-Si PERL solar cells with high bifaciality

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Multifunctional process to improve surface passivation and carrier transport in industrial n-type silicon heterojunction solar cells by 0.7% absolute

Matthew Wright; Moonyong Kim; Peng Dexiang; Xu Xin; Zhang Wenbin; Brendan Wright; Brett Hallam

AIP Conf. Proc. 2147, 110006 (2019) https://doi.org/10.1063/1.5123882

Abstract

View articletitled, Multifunctional process to improve surface passivation and carrier transport in industrial n-type silicon heterojunction solar cells by 0.7% absolute

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REVIEW

Efficiency roadmaps for industrial bifacial pPERC and nPERT cells

Loic Tous; Patrick Choulat; Sukhvinder Singh; Joachim John; Monica Aleman; Meric Fırat; Filip Duerinckx; Jozef Szlufcik

AIP Conf. Proc. 2147, 120001 (2019) https://doi.org/10.1063/1.5123883

Abstract

View articletitled, Efficiency roadmaps for industrial bifacial pPERC and nPERT cells

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SI-BASED TANDEM CELLS, NEW MATERIALS AND NOVEL APPROACHES

Electrical and optical analysis of a spray coated transparent conductive adhesive for two-terminal silicon based tandem solar cells

Ulrike Heitmann; Oliver Höhn; Hubert Hauser; Sven Kluska; Jonas Bartsch; Stefan Janz

AIP Conf. Proc. 2147, 130001 (2019) https://doi.org/10.1063/1.5123884

Abstract

View articletitled, Electrical and optical analysis of a spray coated transparent conductive adhesive for two-terminal silicon based tandem solar cells

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Investigation of n-Al:ZnO/p-Cu₂O heterojunction for c-Si tandem heterojunction solar cell applications

Raj Kumar; Ørnulf Nordseth; Geraldo Cristian Vásquez; Sean Erik Foss; Eduard Monakhov; Bengt Gunnar Svensson

AIP Conf. Proc. 2147, 130002 (2019) https://doi.org/10.1063/1.5123885

Abstract

View articletitled, Investigation of n-Al:ZnO/p-Cu2O heterojunction for c-Si tandem heterojunction solar cell applications

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A facile way to improve the efficiency of perovskite/silicon four-terminal tandem solar cell based on the optimization of long-wavelength spectral response

Shude Zhang; Xiang Fang; Hongwei Hu; Jiansheng Jie; Xiaohong Zhang; Hongqiang Qian; Weifei Lian; Zhichun Ni; Ningyi Yuan; Jianning Ding; Qingzhu Wei

AIP Conf. Proc. 2147, 130003 (2019) https://doi.org/10.1063/1.5123886

Abstract

View articletitled, A facile way to improve the efficiency of perovskite/silicon four-terminal tandem solar cell based on the optimization of long-wavelength spectral response

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The numerical analysis of ZnO nanoparticle based down-converting layer’s influence on solar cell efficiency

Katarzyna Znajdek; Natalia Szczecińska; Aleksandra Sosna-Głębska; Przemysław Czarnecki; Maciej Sibiński

AIP Conf. Proc. 2147, 130004 (2019) https://doi.org/10.1063/1.5123887

Abstract

View articletitled, The numerical analysis of ZnO nanoparticle based down-converting layer’s influence on solar cell efficiency

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SILICON MATERIAL AND DEFECT ENGINEERING

Analysis of temperature dependent surface recombination properties

Rebekka Eberle; Andreas Fell; Tim Niewelt; Florian Schindler; Martin C. Schubert

AIP Conf. Proc. 2147, 140001 (2019) https://doi.org/10.1063/1.5123888

Abstract

View articletitled, Analysis of temperature dependent surface recombination properties

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Gettering efficacy of an APCVD glasses based stacked co-diffusion for bifacial mc-Si PERT solar cells

Johannes Fichtner; Annika Zuschlag; Giso Hahn

AIP Conf. Proc. 2147, 140002 (2019) https://doi.org/10.1063/1.5123889

Abstract

View articletitled, Gettering efficacy of an APCVD glasses based stacked co-diffusion for bifacial mc-Si PERT solar cells

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Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions

Alexander Graf; Axel Herguth; Giso Hahn

AIP Conf. Proc. 2147, 140003 (2019) https://doi.org/10.1063/1.5123890

Abstract

View articletitled, Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions

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Simulation study on the impact of boron-oxygen related light-induced degradation in different silicon solar cell architectures

Axel Herguth

AIP Conf. Proc. 2147, 140004 (2019) https://doi.org/10.1063/1.5123891

Abstract

View articletitled, Simulation study on the impact of boron-oxygen related light-induced degradation in different silicon solar cell architectures

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Impact of the thermal budget of the emitter formation on the pFF of PERC+ solar cells

Philip Jäger; Ulrike Baumann; Thorsten Dullweber

AIP Conf. Proc. 2147, 140005 (2019) https://doi.org/10.1063/1.5123892

Abstract

View articletitled, Impact of the thermal budget of the emitter formation on the pFF of PERC+ solar cells

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Investigation of LeTID where we can control it – Application of FZ silicon for defect studies

Tim Niewelt; Regina Post; Florian Schindler; Wolfram Kwapil; Martin C. Schubert

AIP Conf. Proc. 2147, 140006 (2019) https://doi.org/10.1063/1.5123893

Abstract

View articletitled, Investigation of LeTID where we can control it – Application of FZ silicon for defect studies

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Hydrogenation of dislocations in p-type cast-mono silicon

Aref Samadi; Chandany Sen; Shaoyang Liu; Utkarshaa Varshney; Daniel Chen; Moonyong Kim; Arman Mahboubi Soufiani; Michelle Vaqueiro Contreras; Chee Mun Chong; Alison Ciesla; Malcolm Abbott; Catherine Chan

AIP Conf. Proc. 2147, 140007 (2019) https://doi.org/10.1063/1.5123894

Abstract

View articletitled, Hydrogenation of dislocations in p-type cast-mono silicon

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Zone melting recrystallization of microcrystalline silicon ribbons obtained by chemical vapor deposition

Filipe C. Serra; Elmahdi Amar; David R. Pêra; José A. Silva; João M. Serra

AIP Conf. Proc. 2147, 140008 (2019) https://doi.org/10.1063/1.5123895

Abstract

View articletitled, Zone melting recrystallization of microcrystalline silicon ribbons obtained by chemical vapor deposition

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Hydrogen diffusion from PECVD silicon nitride into multicrystalline silicon wafers: Elastic recoil detection analysis (ERDA) measurements and impact on light and elevated temperature induced degradation (LeTID)

Romika Sharma; Saumitra Vajandar; Thomas Osipowicz; Joel B. Li; Armin G. Aberle; Ying Huang

AIP Conf. Proc. 2147, 140009 (2019) https://doi.org/10.1063/1.5123896

Abstract

View articletitled, Hydrogen diffusion from PECVD silicon nitride into multicrystalline silicon wafers: Elastic recoil detection analysis (ERDA) measurements and impact on light and elevated temperature induced degradation (LeTID)

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Evolution of defect densities with height in a HPMC-Si ingot

Rune Søndenå; Halvard Haug; Chang Chuan You; Junjie Zhu; Marie Syre Wiig

AIP Conf. Proc. 2147, 140010 (2019) https://doi.org/10.1063/1.5123897

Abstract

View articletitled, Evolution of defect densities with height in a HPMC-Si ingot

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Does LeTID occur in c-Si even without a firing step?

David Sperber; Florian Furtwängler; Axel Herguth; Giso Hahn

AIP Conf. Proc. 2147, 140011 (2019) https://doi.org/10.1063/1.5123898

Abstract

View articletitled, Does LeTID occur in c-Si even without a firing step?

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Evaluation of dissolved oxygen concentration in silicon wafers by measuring infrared attenuated total reflection

Kenshiro Usuki; Toshimitsu Mochizuki; Katsuto Tanahashi; Hidetaka Takato; Katsuhiko Yamaguchi

AIP Conf. Proc. 2147, 140012 (2019) https://doi.org/10.1063/1.5123899

Abstract

View articletitled, Evaluation of dissolved oxygen concentration in silicon wafers by measuring infrared attenuated total reflection

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Low-T anneal as cure for LeTID in Mc-Si PERC cells

Marko Yli-Koski; Toni P. Pasanen; Ismo Heikkinen; Michael Serué; Hele Savin

AIP Conf. Proc. 2147, 140013 (2019) https://doi.org/10.1063/1.5123900

Abstract

View articletitled, Low-T anneal as cure for LeTID in Mc-Si PERC cells

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New insights into the thermally activated defects in n-type float-zone silicon

Yan Zhu; Fiacre Rougieux; Nicholas Grant; Jack Mullins; Joyce Ann De Guzman; John D. Murphy; Vladimir P. Markevich; Gianluca Coletti; Anthony R. Peaker; Ziv Hameiri

AIP Conf. Proc. 2147, 140014 (2019) https://doi.org/10.1063/1.5123901

Abstract

View articletitled, New insights into the thermally activated defects in n-type float-zone silicon

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WAFERING TECHNOLOGIES

The impact of surface finish conditions of silicon bricks on the mechanical strength of diamond-wire-sawn thin wafers (120 µm)

Hulbai Sekhar; Tetsuo Fukuda; Katsuto Tanahashi; Hidetaka Takato

AIP Conf. Proc. 2147, 150001 (2019) https://doi.org/10.1063/1.5123902

Abstract

View articletitled, The impact of surface finish conditions of silicon bricks on the mechanical strength of diamond-wire-sawn thin wafers (120 µm)

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Issues

Cover Image

PRELIMINARY

ADVANCED CHARACTERIZATION AND SIMULATION

ADVANCED LIGHT MANAGEMENT

CARRIER SELECTIVE CONTACTS AND CONTACT FORMATION

CLEANING, ETCHING, SURFACE MORPHOLOGY AND SURFACE PASSIVATION

HIGH AND RECORD EFFICIENCY DEVICES

JUNCTION FORMATION

MODULE PROCESSING AND MATERIALS

MODULE RELIABILITY AND PRODUCTION YIELD

NPV WORKSHOP

PROCESS INTEGRATION AND LOW-COST MANUFACTURING

REVIEW

SI-BASED TANDEM CELLS, NEW MATERIALS AND NOVEL APPROACHES

SILICON MATERIAL AND DEFECT ENGINEERING

WAFERING TECHNOLOGIES

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