Volume 20 Issue 1 | AIP Conference Proceedings

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On the Sharpness of the Absorption Edge in Amorphous Ge

T. M. Donovan

AIP Conf. Proc. 20, 1–17 (1974) https://doi.org/10.1063/1.2945960

Abstract

View articletitled, On the Sharpness of the Absorption Edge in Amorphous Ge

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Sharp Absorption Edges and Shallow Density of States Tails for Amorphous Germanium

Howard K. Rockstad

AIP Conf. Proc. 20, 18–26 (1974) https://doi.org/10.1063/1.2945958

Abstract

View articletitled, Sharp Absorption Edges and Shallow Density of States Tails for Amorphous Germanium

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Hydrogen Incorporation in Amorphous Germanium

A. J. Lewis; G. A. N. Connell; W. Paul; J. R. Pawlik; R. J. Temkin

AIP Conf. Proc. 20, 27–32 (1974) https://doi.org/10.1063/1.2945975

Abstract

View articletitled, Hydrogen Incorporation in Amorphous Germanium

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Localized States in Amorphous $GaAs$

T. Botilă; N. Croltoru; Gr. Ioanid; T. Stoica; L. Vescan

AIP Conf. Proc. 20, 33–36 (1974) https://doi.org/10.1063/1.2945984

Abstract

View articletitled, Localized States in Amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">GaAs</mi></math>

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Annealing Behavior of Porosity, Density of Free Spins, Internal Stress and Diamagnetic Susceptibility of Amorphous Germanium

M. A. Paesler; S. C. Agarwal; S. J. Hudgens; H. Fritzsche

AIP Conf. Proc. 20, 37–43 (1974) https://doi.org/10.1063/1.2945989

Abstract

View articletitled, Annealing Behavior of Porosity, Density of Free Spins, Internal Stress and Diamagnetic Susceptibility of Amorphous Germanium

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Comment on the Enhanced Diamagnetism of Amorphous Semiconductors

R. M. White

AIP Conf. Proc. 20, 44–46 (1974) https://doi.org/10.1063/1.2945990

View articletitled, Comment on the Enhanced Diamagnetism of Amorphous Semiconductors

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In Situ Observation of Electron Spin Resonance in Evaporated Amorphous Silicon

P. A. Thomas; D. Lépine; D. Kaplan

AIP Conf. Proc. 20, 47–52 (1974) https://doi.org/10.1063/1.2945991

Abstract

View articletitled, In Situ Observation of Electron Spin Resonance in Evaporated Amorphous Silicon

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Surface States and the Oxidation of Amorphous Ge and Si

W. E. Spicer; B. A. Orlowski; A. D. Baer; C. R. Helms; V. Pereskokov; T. M. Donovan

AIP Conf. Proc. 20, 53–59 (1974) https://doi.org/10.1063/1.2945992

Abstract

View articletitled, Surface States and the Oxidation of Amorphous Ge and Si

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Amorphous to Crystalline Transition of Silicon (111) Surfaces

J. E. Rowe

AIP Conf. Proc. 20, 60–64 (1974) https://doi.org/10.1063/1.2945993

Abstract

View articletitled, Amorphous to Crystalline Transition of Silicon (111) Surfaces

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Activation Energies of Reordering Processes in Disordered Ge‐Films

L. D. Laude; R. F. Willis

AIP Conf. Proc. 20, 65–71 (1974) https://doi.org/10.1063/1.2945994

Abstract

View articletitled, Activation Energies of Reordering Processes in Disordered Ge‐Films

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Photoelectron Spectroscopy of Amorphous Group IV and III–V Semiconductors

N. J. Shevchik

AIP Conf. Proc. 20, 72–84 (1974) https://doi.org/10.1063/1.2945995

Abstract

View articletitled, Photoelectron Spectroscopy of Amorphous Group IV and III–V Semiconductors

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Disorder and the Electronic Density of States of Amorphous Binary Compounds

J. D. Joannopoulos; Marvin L. Cohen

AIP Conf. Proc. 20, 85–89 (1974) https://doi.org/10.1063/1.2945996

Abstract

View articletitled, Disorder and the Electronic Density of States of Amorphous Binary Compounds

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Structural Nature of Amorphous III–V Semiconductors from Photoemission Spectroscopy

Roger A. Pollak

AIP Conf. Proc. 20, 90–94 (1974) https://doi.org/10.1063/1.2945997

Abstract

View articletitled, Structural Nature of Amorphous III–V Semiconductors from Photoemission Spectroscopy

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Valence and Conduction Band State Densities of Crystalline and Amorphous Ge as Seen via Photoelectron Spectroscopy

D. E. Eastman; J. L. Freeouf; M. Erbudak

AIP Conf. Proc. 20, 95–101 (1974) https://doi.org/10.1063/1.2945998

Abstract

View articletitled, Valence and Conduction Band State Densities of Crystalline and Amorphous Ge as Seen via Photoelectron Spectroscopy

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X‐Ray Photoelectron Study of $SiO$

G. Hollinger; J. Tousset; Tran Minh Duc

AIP Conf. Proc. 20, 102–107 (1974) https://doi.org/10.1063/1.2945942

Abstract

View articletitled, X‐Ray Photoelectron Study of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">SiO</mi></math>

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X‐Ray Photoemission Studies of Amorphous Ge and Its Alloys

J. Fukushima; K. Tamura; H. Endo; K. Kishi; S. Ikeda; S. Minomura

AIP Conf. Proc. 20, 108–113 (1974) https://doi.org/10.1063/1.2945943

Abstract

View articletitled, X‐Ray Photoemission Studies of Amorphous Ge and Its Alloys

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High Resolution Electron‐Energy‐Loss Spectroscopy of Amorphous Germanium and Silicon Films

B. Schröder

AIP Conf. Proc. 20, 114–119 (1974) https://doi.org/10.1063/1.2945944

Abstract

View articletitled, High Resolution Electron‐Energy‐Loss Spectroscopy of Amorphous Germanium and Silicon Films

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On the Influence of Long Range vs Short Range Order Effects on the Electronic Structure of Tetrahedrally Bonded Semiconductors

K. Maschke; H. Overhof; P. Thomas

AIP Conf. Proc. 20, 120–125 (1974) https://doi.org/10.1063/1.2945945

Abstract

View articletitled, On the Influence of Long Range vs Short Range Order Effects on the Electronic Structure of Tetrahedrally Bonded Semiconductors

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A New Model for Optical Absorption in a‐Ge and a‐Si

R. S. Bauer

AIP Conf. Proc. 20, 126–132 (1974) https://doi.org/10.1063/1.2945946

Abstract

View articletitled, A New Model for Optical Absorption in a‐Ge and a‐Si

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Comparative Study of the Valence Band Density of States of Amorphous Ge and $GaAs$

B. Kramer; J. Treusch

AIP Conf. Proc. 20, 133–138 (1974) https://doi.org/10.1063/1.2945947

Abstract

View articletitled, Comparative Study of the Valence Band Density of States of Amorphous Ge and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">GaAs</mi></math>

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Applications of Localised Pseudopotential Theory

D. W. Bullett

AIP Conf. Proc. 20, 139–144 (1974) https://doi.org/10.1063/1.2945948

Abstract

View articletitled, Applications of Localised Pseudopotential Theory

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On the Application of Extended Hückel Theory in Tetrahedrally Bonded Amorphous Semiconductors

B. Y. Tong

AIP Conf. Proc. 20, 145–150 (1974) https://doi.org/10.1063/1.2945949

Abstract

View articletitled, On the Application of Extended Hückel Theory in Tetrahedrally Bonded Amorphous Semiconductors

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Ultraviolet Photoemission from Polymorphs of Ge and Si and Some Simple Models of Amorphous Ge and Si

I. B. Ortenburger; D. Henderson

AIP Conf. Proc. 20, 151–155 (1974) https://doi.org/10.1063/1.2945950

Abstract

View articletitled, Ultraviolet Photoemission from Polymorphs of Ge and Si and Some Simple Models of Amorphous Ge and Si

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Single Band Density of States for an Amorphous Tetrahedrally Bonded System

A. Bansil; L. Schwartz

AIP Conf. Proc. 20, 156–161 (1974) https://doi.org/10.1063/1.2945951

Abstract

View articletitled, Single Band Density of States for an Amorphous Tetrahedrally Bonded System

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Some Features in the Valence Band Density of States of Amorphous Ge and Si

K. S. Song

AIP Conf. Proc. 20, 162–166 (1974) https://doi.org/10.1063/1.2945952

Abstract

View articletitled, Some Features in the Valence Band Density of States of Amorphous Ge and Si

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Characterization of Amorphous Systems Using Local Configurations

J. D. Joannopoulos; F. Yndurain; L. M. Falicov; Marvin L. Cohen

AIP Conf. Proc. 20, 167–169 (1974) https://doi.org/10.1063/1.2945953

Abstract

View articletitled, Characterization of Amorphous Systems Using Local Configurations

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Local Density of States of Amorphous Semiconductors with Defects

J. P. Gaspard

AIP Conf. Proc. 20, 170–173 (1974) https://doi.org/10.1063/1.2945954

Abstract

View articletitled, Local Density of States of Amorphous Semiconductors with Defects

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Some Comments on the Valence Bands of Model Amorphous Semiconductor Structures

M. J. Kelly

AIP Conf. Proc. 20, 174–176 (1974) https://doi.org/10.1063/1.2945955

View articletitled, Some Comments on the Valence Bands of Model Amorphous Semiconductor Structures

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Scattering Properties of Amorphous Structures

W. Cochran

AIP Conf. Proc. 20, 177–187 (1974) https://doi.org/10.1063/1.2945956

Abstract

View articletitled, Scattering Properties of Amorphous Structures

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A Possible Model of Amorphous Silicon and Germanium

G. P. Betteridge; Volker Heine

AIP Conf. Proc. 20, 188–191 (1974) https://doi.org/10.1063/1.2945957

Abstract

View articletitled, A Possible Model of Amorphous Silicon and Germanium

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Modelling the Structure of Amorphous Tetrahedrally Co‐Ordinated Semiconductors II

G. A. N. Connell; R. J. Temkint

AIP Conf. Proc. 20, 192–199 (1974) https://doi.org/10.1063/1.2945959

Abstract

View articletitled, Modelling the Structure of Amorphous Tetrahedrally Co‐Ordinated Semiconductors II

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Free Energy Minimization of Continuous Network Models of Amorphous Germanium

R. Grigorovici; R.Mănăilă; M. Popescu; C. Stănescu

AIP Conf. Proc. 20, 200–205 (1974) https://doi.org/10.1063/1.2945961

Abstract

View articletitled, Free Energy Minimization of Continuous Network Models of Amorphous Germanium

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Computer Algorithms For Systematic Construction of Random Networks

D. S. Boudreaux; D. E. Polk; M. G. Duffy

AIP Conf. Proc. 20, 206–212 (1974) https://doi.org/10.1063/1.2945962

Abstract

View articletitled, Computer Algorithms For Systematic Construction of Random Networks

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Construction, Refinement and Applications of Structural Models

R. Alben; P. Steinhart; D. Weaire

AIP Conf. Proc. 20, 213–217 (1974) https://doi.org/10.1063/1.2945963

Abstract

View articletitled, Construction, Refinement and Applications of Structural Models

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Vitreous Silica Minus Oxygen⇒Amorphous Silicon: A Model Study

D. L. Evans; M. P. Teter; N. F. Borrelli

AIP Conf. Proc. 20, 218–223 (1974) https://doi.org/10.1063/1.2945964

Abstract

View articletitled, Vitreous Silica Minus Oxygen⇒Amorphous Silicon: A Model Study

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Simulation of Continuous Random Network Models with Periodic Boundary Conditions

Lester Guttman

AIP Conf. Proc. 20, 224–228 (1974) https://doi.org/10.1063/1.2945965

Abstract

View articletitled, Simulation of Continuous Random Network Models with Periodic Boundary Conditions

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Dihedral Angle Distribution of Amorphous Germanium

R. J. Temkin

AIP Conf. Proc. 20, 229–233 (1974) https://doi.org/10.1063/1.2945966

Abstract

View articletitled, Dihedral Angle Distribution of Amorphous Germanium

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Pressure‐Induced Semiconductor‐Metal Transitions in Amorphous Si, Ge and $InSb$

S. Minomura; O. Shimomura; N. Saki; K. Asaumi; H. Endo; K. Tamura; J. Fukushima; K. Tsuji

AIP Conf. Proc. 20, 234–240 (1974) https://doi.org/10.1063/1.2945967

Abstract

View articletitled, Pressure‐Induced Semiconductor‐Metal Transitions in Amorphous Si, Ge and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">InSb</mi></math>

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Effect of Angle of Evaporation on Amorphous Ge Films

B. Orlowski; W. E. Spicer; A. D. Baer

AIP Conf. Proc. 20, 241–246 (1974) https://doi.org/10.1063/1.2945968

Abstract

View articletitled, Effect of Angle of Evaporation on Amorphous Ge Films

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Structural Variation Induced in Amorphous Ge by Changing the Angle of Evaporation

M. L. Rudee

AIP Conf. Proc. 20, 247–248 (1974) https://doi.org/10.1063/1.2945969

Abstract

View articletitled, Structural Variation Induced in Amorphous Ge by Changing the Angle of Evaporation

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Vibrational Properties of Amorphous Silicon and Germanium

Richard Alben

AIP Conf. Proc. 20, 249–259 (1974) https://doi.org/10.1063/1.2945970

Abstract

View articletitled, Vibrational Properties of Amorphous Silicon and Germanium

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Raman Scattering from Amorphous 3–5 and 2–6 Semiconductors

Jeffrey S. Lannin

AIP Conf. Proc. 20, 260–266 (1974) https://doi.org/10.1063/1.2945971

Abstract

View articletitled, Raman Scattering from Amorphous 3–5 and 2–6 Semiconductors

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Phonons in Amorphous Clusters

M. F. Thorpe

AIP Conf. Proc. 20, 267–273 (1974) https://doi.org/10.1063/1.2945972

Abstract

View articletitled, Phonons in Amorphous Clusters

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A Model Structure Calculation of Raman Scattering in Amorphous Ge and Si

L. von Heimendahl

AIP Conf. Proc. 20, 274–278 (1974) https://doi.org/10.1063/1.2945973

Abstract

View articletitled, A Model Structure Calculation of Raman Scattering in Amorphous Ge and Si

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Inelastic Neutron Scattering from Amorphous Germanium

J. D. Axe; D. T. Keating; G. S. Cargill, III; R. Alben

AIP Conf. Proc. 20, 279–283 (1974) https://doi.org/10.1063/1.2945974

Abstract

View articletitled, Inelastic Neutron Scattering from Amorphous Germanium

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An Interpretation of the First Order Raman and Infrared Spectra of Tetrahedrally Bonded Amorphous Semiconductors

S. S. Mitra; D. K. Paul; Y. P. Tsay; B. Bendow

AIP Conf. Proc. 20, 284–289 (1974) https://doi.org/10.1063/1.2945976

Abstract

View articletitled, An Interpretation of the First Order Raman and Infrared Spectra of Tetrahedrally Bonded Amorphous Semiconductors

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Microwave and Far Infrared Absorption in Amorphous Ge

J. R. Hendrickson; U. Strom; P. C. Taylor; S. K. Bahl

AIP Conf. Proc. 20, 290–296 (1974) https://doi.org/10.1063/1.2945977

Abstract

View articletitled, Microwave and Far Infrared Absorption in Amorphous Ge

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In‐Situ Transport Measurements on UHV Grown a‐Ge

M. L. Knotek

AIP Conf. Proc. 20, 297–310 (1974) https://doi.org/10.1063/1.2945978

Abstract

View articletitled, In‐Situ Transport Measurements on UHV Grown a‐Ge

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Hopping Conduction in Amorphous Germanium

P. J. Elliott; A. D. Yoffe; E. A. Davis

AIP Conf. Proc. 20, 311–319 (1974) https://doi.org/10.1063/1.2945979

Abstract

View articletitled, Hopping Conduction in Amorphous Germanium

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Hopping Conduction in Amorphous Ge Films Condensed at 8 K

S. K. Bahl; N. Bluzer

AIP Conf. Proc. 20, 320–325 (1974) https://doi.org/10.1063/1.2945980

Abstract

View articletitled, Hopping Conduction in Amorphous Ge Films Condensed at 8 K

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An Exact Calculation of the Phonon‐Assisted Jump Rate

David Emin

AIP Conf. Proc. 20, 326–332 (1974) https://doi.org/10.1063/1.2945981

Abstract

View articletitled, An Exact Calculation of the Phonon‐Assisted Jump Rate

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Variable Range Tunneling in Amorphous Ge

J. W. Osmun; H. Fritzsche

AIP Conf. Proc. 20, 333–337 (1974) https://doi.org/10.1063/1.2945982

Abstract

View articletitled, Variable Range Tunneling in Amorphous Ge

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Electron Tunneling in Amorphous Semiconductors

J. J. Hauser

AIP Conf. Proc. 20, 338–344 (1974) https://doi.org/10.1063/1.2945983

Abstract

View articletitled, Electron Tunneling in Amorphous Semiconductors

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Heterojunctions of Amorphous Silicon and Silicon Single Crystals

W. Fuhs; K. Niemann; J. Stuke

AIP Conf. Proc. 20, 345–350 (1974) https://doi.org/10.1063/1.2945985

View articletitled, Heterojunctions of Amorphous Silicon and Silicon Single Crystals

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Amorphous‐Crystalline Heterojunctions

G. H. Doőhler; M. H. Brodsky

AIP Conf. Proc. 20, 351–356 (1974) https://doi.org/10.1063/1.2945986

Abstract

View articletitled, Amorphous‐Crystalline Heterojunctions

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Frequency and Electric Field Dependence of Magnetoconductivity in Amorphous Ge

H. Mell

AIP Conf. Proc. 20, 357–362 (1974) https://doi.org/10.1063/1.2945987

Abstract

View articletitled, Frequency and Electric Field Dependence of Magnetoconductivity in Amorphous Ge

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AC Conductivity of Amorphous Germanium

T. Arizumi; A. Yoshida; T. Baba; K. Shimakawa; S. Nitta

AIP Conf. Proc. 20, 363–367 (1974) https://doi.org/10.1063/1.2945988

Abstract

View articletitled, AC Conductivity of Amorphous Germanium

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