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Preface: 19th International Conference on Ion Implantation Technology
AIP Conf. Proc. 1496, 1 (2012)
https://doi.org/10.1063/1.4766477
ADVANCED EQUIPMENT
Plasma chemistry study of PLAD processes
Shu Qin; Kyle Brumfield; Lequn Jennifer Liu; Yongjun Jeff Hu; Allen McTeer; Wei Hui Hsu; Maoying Wang
AIP Conf. Proc. 1496, 380–385 (2012)
https://doi.org/10.1063/1.4766568
VIISta Trident: New generation high current implant technology
AIP Conf. Proc. 1496, 296–299 (2012)
https://doi.org/10.1063/1.4766547
Comparison of SAGS I vs. SAGS II delivery systems in emerging implantation technologies
AIP Conf. Proc. 1496, 398–401 (2012)
https://doi.org/10.1063/1.4766572
Introduction of the MC3-II/GP system, medium current ion implanter with enhanced multi-charge beam current
Masazumi Koike; Fumiaki Sato; Makoto Sano; Sho Kawatsu; Hiroyuki Kariya; Yasuhiko Kimura; Tetsuya Kudo; Miyuki Shiraishi; Masamitsu Shinozuka; Yuji Takahashi; Yuji Ishida; Mitsukuni Tsukihara; Kazuyoshi Ueno; Michiro Sugitani
AIP Conf. Proc. 1496, 336–339 (2012)
https://doi.org/10.1063/1.4766557
Ion beams extraction and measurements of plasma parameters on a multi-frequencies microwaves large bore ECRIS with permanent magnets
Dai Nozaki; Ryutaro Kiriyama; Tomoya Takenaka; Yosuke Kurisu; Keisuke Yano; Fuminobu Sato; Yushi Kato; Toshiyuki Iida
AIP Conf. Proc. 1496, 410–413 (2012)
https://doi.org/10.1063/1.4766575
Advanced solutions for yield improvement: “Super PI”
AIP Conf. Proc. 1496, 300–303 (2012)
https://doi.org/10.1063/1.4766548
Neutralization of space charge in magnetic field by electrons supplied from silicon based field emitter arrays
AIP Conf. Proc. 1496, 422–425 (2012)
https://doi.org/10.1063/1.4766578
Beam energy tracking system on Optima XEx high energy ion implanter
AIP Conf. Proc. 1496, 364–367 (2012)
https://doi.org/10.1063/1.4766564
Radiation protection for high energy implantation of light ions in a production environment
AIP Conf. Proc. 1496, 402–405 (2012)
https://doi.org/10.1063/1.4766573
Improved efficiency and precise temperature control of low-frequency induction-heating pure iron vapor source on ECR ion source
Y. Kato; T. Takenaka; K. Yano; R. Kiriyama; Y. Kurisu; D. Nozaki; M. Muramatsu; A. Kitagawa; T. Uchida; Y. Yoshida; F. Sato; T. Iida
AIP Conf. Proc. 1496, 430–433 (2012)
https://doi.org/10.1063/1.4766580
Extraction of aluminum ions from a plasma-sputter-type ion source
AIP Conf. Proc. 1496, 390–393 (2012)
https://doi.org/10.1063/1.4766570
MIND+ system; More universal dose patterns by single-step ion implantation
Yasuharu Okamoto; Shiro Ninomiya; Akihiro Ochi; Yusuke Ueno; Tatsuya Yamada; Yasuhiko Kimura; Tetsuya Kudo; Masazumi Koike; Noriyuki Suetsugu; Yoshiaki Ookita; Mitsukuni Tsukihara; Fumiaki Sato; Genshu Fuse; Kazuyoshi Ueno; Michiro Sugitani
AIP Conf. Proc. 1496, 348–351 (2012)
https://doi.org/10.1063/1.4766560
Enhanced life ion source for germanium and carbon ion implantation
AIP Conf. Proc. 1496, 372–375 (2012)
https://doi.org/10.1063/1.4766566
Mass and charge overlaps in beamline implantation into compound semiconductor materials
AIP Conf. Proc. 1496, 376–379 (2012)
https://doi.org/10.1063/1.4766567
Optima MDxt: A high throughput 335 keV mid-dose implanter
Edward Eisner; Jonathan David; Perry Justesen; Dennis Kamenitsa; Edward McIntyre; Robert Rathmell; Andrew Ray; Richard Rzeszut
AIP Conf. Proc. 1496, 340–343 (2012)
https://doi.org/10.1063/1.4766558
Microwave ECR plasma electron flood for low pressure wafer charge neutralization
AIP Conf. Proc. 1496, 356–359 (2012)
https://doi.org/10.1063/1.4766562
Improvement of microwave feeding on a large bore ECRIS with permanent magnets by using coaxial semi-dipole antenna
Yosuke Kurisu; Naoki Sakamoto; Ryutaro Kiriyama; Tomoya Takenaka; Dai Nozaki; Keisuke Yano; Fuminobu Sato; Yushi Kato; Toshiyuki Iida
AIP Conf. Proc. 1496, 434–437 (2012)
https://doi.org/10.1063/1.4766581
Neutralization of space charge on high-current low-energy ion beam by low-energy electrons supplied from silicon based field emitter arrays
Yasuhito Gotoh; Hiroshi Tsuji; Shuhei Taguchi; Keita Ikeda; Takayuki Kitagawa; Junzo Ishikawa; Shigeki Sakai
AIP Conf. Proc. 1496, 368–371 (2012)
https://doi.org/10.1063/1.4766565
IMPHEAT high temperature ion implantation system
AIP Conf. Proc. 1496, 332–335 (2012)
https://doi.org/10.1063/1.4766556
Oscillation phenomena of a plasma produced by an AC driven hot cathode
AIP Conf. Proc. 1496, 414–417 (2012)
https://doi.org/10.1063/1.4766576
Long term study of the effectiveness of in-situ chemical source clean with on ion implanter
AIP Conf. Proc. 1496, 360–363 (2012)
https://doi.org/10.1063/1.4766563
Source and beam performance improvement for carbon implantation with carbon monoxide (CO) gas
AIP Conf. Proc. 1496, 312–315 (2012)
https://doi.org/10.1063/1.4766551
Comparison between single- and dual-electrode ion source systems for low-energy ion transport
AIP Conf. Proc. 1496, 406–409 (2012)
https://doi.org/10.1063/1.4766574
Multi-cusp ion source for Gen 5.5 doping system
Yutaka Inouchi; Takeshi Matsumoto; Shojiro Dohi; Masahiro Tanii; Genki Takahashi; Katsuharu Imai; Ippei Nishimura; Junichi Tatemichi; Masashi Konishi; Masao Naito
AIP Conf. Proc. 1496, 328–331 (2012)
https://doi.org/10.1063/1.4766555
NISSIN iG5 implantation tool for generation 5.5 in the flat panel display industry
Takeshi Matsumoto; Katsuharu Imai; Ippei Nishimura; Yutaka Inouchi; Shojiro Dohi; Genki Takahashi; Masahiro Tanii; Junichi Tatemichi; Masashi Konishi; Masao Naito
AIP Conf. Proc. 1496, 324–327 (2012)
https://doi.org/10.1063/1.4766554
Gas cylinder release rate testing and analysis
AIP Conf. Proc. 1496, 394–397 (2012)
https://doi.org/10.1063/1.4766571
F-SAVING system productivity improvement for the SHX-III
Shiro Ninomiya; Yasuharu Okamoto; Akihiro Ochi; Toshio Yumiyama; Takeshi Kurose; Masaki Ishikawa; Takashi Tsuzuki; Yasuhiko Kimura; Yoshiaki Ookita; Koji Ishikawa; Mitsukuni Tsukihara; Kazuyoshi Ueno
AIP Conf. Proc. 1496, 352–355 (2012)
https://doi.org/10.1063/1.4766561
DOPING TECHNOLOGY
Advanced technology nodes, a foundry perspective
AIP Conf. Proc. 1496, 11–15 (2012)
https://doi.org/10.1063/1.4766478
Plasma immersion ion implantation for sub-22 nm node devices: FD-SOI and Tri-Gate
AIP Conf. Proc. 1496, 71–74 (2012)
https://doi.org/10.1063/1.4766492
PIN diode steering element formation for 3D X-bar memory
AIP Conf. Proc. 1496, 30–33 (2012)
https://doi.org/10.1063/1.4766482
NMOS contact resistance reduction with selenium implant into NiPt silicide
K. V. Rao; F. A. Khaja; C. N. Ni; S. Muthukrishnan; A. Darlark; J. Lei; I. Peidous; A. Brand; T. Henry; N. Variam; Y. Erokhin
AIP Conf. Proc. 1496, 46–49 (2012)
https://doi.org/10.1063/1.4766486
High-k metal-gate PMOS FinFET threshold voltage tuning with aluminum implantation
K. V. Rao; T. Ngai; C. Hobbs; M. Rodgers; S. Vivekanand; V. Chavva; F. Khaja; T. Henry; K. H. Shim; P. Kirsch; R. Jammy
AIP Conf. Proc. 1496, 38–41 (2012)
https://doi.org/10.1063/1.4766484
Optical doping of compounds by ion implantation of Tm ions
M. Fialho; K. Lorenz; S. Magalhães; A. Redondo-Cubero; J. Rodrigues; N. F. Santos; T. Monteiro; E. Alves
AIP Conf. Proc. 1496, 63–66 (2012)
https://doi.org/10.1063/1.4766490
Effects of implant temperature and millisecond annealing on dopant activation and diffusion
AIP Conf. Proc. 1496, 95–98 (2012)
https://doi.org/10.1063/1.4766498
Strained Si:C using low temperature clustercarbon implants and laser annealing
Karuppanan Sekar; Nobuhiro Tokoro; Hiroshi Onoda; Yoshiki Nakashima; Yuji Koga; Nariaki Hamamoto; Tsutomu Nagayama; Joshua Herman; Steve Novak; Martin Rodgers; Daniel Franca; Saikumar Vivekanand
AIP Conf. Proc. 1496, 99–102 (2012)
https://doi.org/10.1063/1.4766499
Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies
Hugh Park; Stan Todorov; Benjamin Colombeau; Dennis Rodier; Dimitry Kouzminov; Wei Zou; Baonian Guo; Niranjan Khasgiwale; Kurt Decker-Lucke
AIP Conf. Proc. 1496, 79–82 (2012)
https://doi.org/10.1063/1.4766494
Resistive switching properties of -based ReRAM with implanted Si/Al ions
Hongwei Xie; Ming Wang; Peter Kurunczi; Yuri Erokhin; Qi Liu; Hangbing Lv; Yingtao Li; Shibing Long; Su Liu; Ming Liu
AIP Conf. Proc. 1496, 26–29 (2012)
https://doi.org/10.1063/1.4766481
Fluorine implantation in germanium for dopant diffusion control
AIP Conf. Proc. 1496, 115–118 (2012)
https://doi.org/10.1063/1.4766503
Phosphorous transient enhanced diffusion suppression and activation enhancement with cluster carbon co-implantation
Yoshiki Nakashima; Nariaki Hamamoto; Tsutomu Nagayama; Yuji Koga; Sei Umisedo; Yasunori Kawamura; Masahiro Hashimoto; Hiroshi Onoda
AIP Conf. Proc. 1496, 107–110 (2012)
https://doi.org/10.1063/1.4766501
Solid phase epitaxial re-growth of Sn ion implanted germanium thin films
D. Giubertoni; E. Demenev; S. Gupta; Y. Jestin; F. Meirer; S. Gennaro; E. Iacob; G. Pepponi; G. Pucker; R. M. Gwilliam; C. Jeynes; J. L. Colaux; K. C. Saraswat; M. Bersani
AIP Conf. Proc. 1496, 103–106 (2012)
https://doi.org/10.1063/1.4766500
Ion implantation challenges for power devices
AIP Conf. Proc. 1496, 16–21 (2012)
https://doi.org/10.1063/1.4766479
Sub-2y node NAND flash characteristics using spot beam technology for low energy, high tilt implant for n-poly doping
Chong-Il Ryu; Sangsun Lee; Young-Ho Jeon; Youngil Cheon; Jin-Kwan Choi; Young-Ho Yang; Kyung-Won Lee; Rympyo Hong; Jong-Yoon Yoon; Ron Reece; Leonard M. Rubin
AIP Conf. Proc. 1496, 34–37 (2012)
https://doi.org/10.1063/1.4766483
Investigation of nitrogen and carbon co-implantation under room temperature and cryo-condition
Yonggen He; Bing Wu; Guobin Yu; Yong Chen; Hailong Liu; Youfeng He; Haibo Dai; Jingang Wu; David Wei Zhang; Junfeng Lu; Jingrui Xu; Baonian Guo
AIP Conf. Proc. 1496, 87–90 (2012)
https://doi.org/10.1063/1.4766496
Trench doping process for 3D transistors - 2D cross-sectional doping profiling study
AIP Conf. Proc. 1496, 75–78 (2012)
https://doi.org/10.1063/1.4766493
Change of fluorine distribution depending on multi-implant conditions
AIP Conf. Proc. 1496, 111–114 (2012)
https://doi.org/10.1063/1.4766502
Plasma process optimization for N-type doping applications
AIP Conf. Proc. 1496, 67–70 (2012)
https://doi.org/10.1063/1.4766491
MATERIALS SCIENCE
Si film separation obtained by high energy proton implantation
AIP Conf. Proc. 1496, 257–260 (2012)
https://doi.org/10.1063/1.4766537
An effective metals gettering process with a cryogenic carbon implant for CMOS image sensors
AIP Conf. Proc. 1496, 265–267 (2012)
https://doi.org/10.1063/1.4766539
Nanocell fabrication on GaSb at room temperature and cryogenic temperature
AIP Conf. Proc. 1496, 280–283 (2012)
https://doi.org/10.1063/1.4766543
Plasma immersion ion implantation for reducing metal ion release
AIP Conf. Proc. 1496, 284–287 (2012)
https://doi.org/10.1063/1.4766544
Optimization of cleanliness and oxidation in plasma doped photoresist strip
J. DeLuca; A. B. Lee; S. W. Jin; I. S. Jang; J. Hou; D. Mattson; S. Luo; A. Scuderi; Y. J. Yang; I. Berry; D. Roh
AIP Conf. Proc. 1496, 292–295 (2012)
https://doi.org/10.1063/1.4766546
Fabrication of ultra-thin diamond films using hydrogen implantation and Lift-off technique
AIP Conf. Proc. 1496, 261–264 (2012)
https://doi.org/10.1063/1.4766538
Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium
AIP Conf. Proc. 1496, 276–279 (2012)
https://doi.org/10.1063/1.4766542
MODELING AND SIMULATION
Modeling boron profiles in silicon after pulsed excimer laser annealing
AIP Conf. Proc. 1496, 241–244 (2012)
https://doi.org/10.1063/1.4766533
Simulation of 3D FinFET doping profiles by ion implantation
AIP Conf. Proc. 1496, 217–220 (2012)
https://doi.org/10.1063/1.4766527
TCAD simulation of the co-implantation species C, F, and N in MOS transistors
AIP Conf. Proc. 1496, 249–252 (2012)
https://doi.org/10.1063/1.4766535
Temperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics study
AIP Conf. Proc. 1496, 229–232 (2012)
https://doi.org/10.1063/1.4766530
PIII modeling: Implantation, amorphisation and diffusion
Z. Essa; F. Cristiano; Y. Spiegel; P. Boulenc; Y. Qiu; M. Quillec; N. Taleb; A. Burenkov; M. Hackenberg; E. Bedel-Pereira; V. Mortet; Frank Torregrosa; C. Tavernier
AIP Conf. Proc. 1496, 237–240 (2012)
https://doi.org/10.1063/1.4766532
Simulation of plasma immersion ion implantation into silicon
AIP Conf. Proc. 1496, 233–236 (2012)
https://doi.org/10.1063/1.4766531
Dependence of near-surface dopant pile-up on post-implant annealing conditions
AIP Conf. Proc. 1496, 253–256 (2012)
https://doi.org/10.1063/1.4766536
Simulation of the post-implantation anneal for emitter profile optimization in high efficiency c-Si solar cells
A. Florakis; W. Vandervorst; T. Janssens; E. Rosseel; B. Douhard; J. Delmotte; E. Cornagliotti; K. Baert; N. Posthuma; J. Poortmans
AIP Conf. Proc. 1496, 206–211 (2012)
https://doi.org/10.1063/1.4766525
Predictive process simulation of cryogenic implants for leading edge transistor design
Hans-Joachim Gossmann; Nikolas Zographos; Hugh Park; Benjamin Colombeau; Thomas Parrill; Niranjan Khasgiwale; Ricardo Borges; Ronald Gull; Yuri Erokhin
AIP Conf. Proc. 1496, 225–228 (2012)
https://doi.org/10.1063/1.4766529
Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes
AIP Conf. Proc. 1496, 221–224 (2012)
https://doi.org/10.1063/1.4766528
Process modeling of chemical and stress effects in SiGe
AIP Conf. Proc. 1496, 212–216 (2012)
https://doi.org/10.1063/1.4766526
Insights to emitter saturation current densities of boron implanted samples based on defects simulations
AIP Conf. Proc. 1496, 245–248 (2012)
https://doi.org/10.1063/1.4766534
CHARACTERIZATION
Electrical properties of intermediate band (IB) silicon solar cells obtained by titanium ion implantation
Helena Castán; Eduardo Pérez; Héctor García; Salvador Dueñas; Luis Bailón; Javier Olea; David Pastor; Eric García-Hemme; Maite Irigoyen; Germán González-Díaz
AIP Conf. Proc. 1496, 189–192 (2012)
https://doi.org/10.1063/1.4766521
Characteristics of , Ga and In implanted Si after FLA and RTA annealing
AIP Conf. Proc. 1496, 179–182 (2012)
https://doi.org/10.1063/1.4766519
Electrical characterization of {311} defects and related junction leakage currents in n-type Si after ion implantation
AIP Conf. Proc. 1496, 171–174 (2012)
https://doi.org/10.1063/1.4766517
High-resolution and site-specific scanning spreading resistance microscopy and its applications to silicon devices
AIP Conf. Proc. 1496, 147–151 (2012)
https://doi.org/10.1063/1.4766511
Process characterization of a novel conformal FinFET doping
AIP Conf. Proc. 1496, 197–200 (2012)
https://doi.org/10.1063/1.4766523
Advanced characterization of carrier profiles in germanium using micro-machined contact probes
T. Clarysse; M. Konttinen; B. Parmentier; A. Moussa; W. Vandervorst; G. Impellizzeri; E. Napolitani; V. Privitera; P. F. Nielsen; D. H. Petersen; O. Hansen
AIP Conf. Proc. 1496, 167–170 (2012)
https://doi.org/10.1063/1.4766516
Multi-wavelength Raman and photoluminescence characterization of implanted n+/p junctions under various rapid thermal annealing conditions
Woo Sik Yoo; Takeshi Ueda; Toshikazu Ishigaki; Kitaek Kang; Kyoung Bong Rouh; Yong Seok Eun; Choon Hwan Kim; Hyo Sang Kang
AIP Conf. Proc. 1496, 156–159 (2012)
https://doi.org/10.1063/1.4766513
Temperature-dependant study of phosphorus ion implantation in germanium
AIP Conf. Proc. 1496, 193–196 (2012)
https://doi.org/10.1063/1.4766522
Active dopant profiling of ultra shallow junction annealed with combination of spike lamp and laser annealing processes using scanning spreading resistance microscopy
Satoshi Abo; Naoya Ushigome; Hidenori Osae; Fujio Wakaya; Toshiaki Iwamatsu; Hidekazu Oda; Mikio Takai
AIP Conf. Proc. 1496, 164–166 (2012)
https://doi.org/10.1063/1.4766515
Junction leakage measurements with micro four-point probes
Rong Lin; Dirch H. Petersen; Fei Wang; Bradley R. Yates; Kevin S. Jones; Ole Hansen; Alex Kontos; Peter F. Nielsen
AIP Conf. Proc. 1496, 175–178 (2012)
https://doi.org/10.1063/1.4766518
Defect detection in recrystallized ultra-shallow implanted silicon by multiwavelength-excited photoluminescence
AIP Conf. Proc. 1496, 160–163 (2012)
https://doi.org/10.1063/1.4766514
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing
F. Meirer; E. Demenev; D. Giubertoni; S. Gennaro; L. Vanzetti; G. Pepponi; M. Bersani; M. A. Sahiner; G. Steinhauser; M. A. Foad; J. C. Woicik; A. Mehta; P. Pianetta
AIP Conf. Proc. 1496, 183–188 (2012)
https://doi.org/10.1063/1.4766520
ANNEALING TECHNOLOGY
Ultra low thermal budget anneals for 3D memories: Access device formation
AIP Conf. Proc. 1496, 135–138 (2012)
https://doi.org/10.1063/1.4766508
Microwave annealing
Yao-Jen Lee; T.-C. Cho; S.-S. Chuang; F.-K. Hsueh; Y.-L. Lu; P.-J. Sung; S.-J. Chen; C.-H. Lo; C.-H. Lai; Michael I. Current; T.-Y. Tseng; T.-S. Chao; F.-L. Yang
AIP Conf. Proc. 1496, 123–128 (2012)
https://doi.org/10.1063/1.4766505
Pattern effect reduction for spike anneals with different heating approaches in RTP systems
AIP Conf. Proc. 1496, 139–142 (2012)
https://doi.org/10.1063/1.4766509
Implanted selective emitter solar cells by laser thermal annealing
AIP Conf. Proc. 1496, 131–134 (2012)
https://doi.org/10.1063/1.4766507
Fabrication of Si surface pattern by Ar beam irradiation and annealing method
AIP Conf. Proc. 1496, 143–146 (2012)
https://doi.org/10.1063/1.4766510
USJ formation using solid phase epitaxial regrowth and femtosencond laser anneal
AIP Conf. Proc. 1496, 129–130 (2012)
https://doi.org/10.1063/1.4766506
The implementation of reflective assessment using Gibbs’ reflective cycle in assessing students’ writing skill
Lala Nurlatifah, Pupung Purnawarman, et al.
Effect of coupling agent type on the self-cleaning and anti-reflective behaviour of advance nanocoating for PV panels application
Taha Tareq Mohammed, Hadia Kadhim Judran, et al.
Design of a 100 MW solar power plant on wetland in Bangladesh
Apu Kowsar, Sumon Chandra Debnath, et al.