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Preface: Frontiers of Characterization and Metrology for Nanoelectronics: 2011
AIP Conf. Proc. 1395, 1–2 (2011)
https://doi.org/10.1063/1.3657859
Characterization of Strain Induced by PECVD Silicon Nitride Films in Transistor Channels
AIP Conf. Proc. 1395, 90–94 (2011)
https://doi.org/10.1063/1.3657871
Annealed Si/SiGeC Superlattices Studied by Dark‐Field Electron Holography, ToF‐SIMS and Infrared Spectroscopy
AIP Conf. Proc. 1395, 105–109 (2011)
https://doi.org/10.1063/1.3657874
Analytical Study of BAM (Al/GaAs) and Photovoltaic Samples Using State‐of‐The‐Art Auger Nanoprobes
P. Yadav; M. Bouttemy; E. Martinez; J. Vigneron; O. Renault; P. Mur; D. Munoz; A. Etcheberry; A. Chabli
AIP Conf. Proc. 1395, 113–117 (2011)
https://doi.org/10.1063/1.3657875
Enhanced Spatial Resolution Electrical Scanning Probe Microscopy By Using Carbon Nanotube Terminated Tips
AIP Conf. Proc. 1395, 123–127 (2011)
https://doi.org/10.1063/1.3657877
Stress‐induced Effects Caused by 3D IC TSV Packaging in Advanced Semiconductor Device Performance
AIP Conf. Proc. 1395, 249–258 (2011)
https://doi.org/10.1063/1.3657899
Metrology and Characterization Challenges for Emerging Research Materials and Devices
AIP Conf. Proc. 1395, 43–46 (2011)
https://doi.org/10.1063/1.3657864
Frontiers of More than Moore in Bioelectronics and the Required Metrology Needs
AIP Conf. Proc. 1395, 360–369 (2011)
https://doi.org/10.1063/1.3657915
Ultimate Backside Sample Preparation For Ultra Thin High‐k/Metal Gate Stack Characterization
AIP Conf. Proc. 1395, 171–175 (2011)
https://doi.org/10.1063/1.3657885
Characterization and Failure Analysis of 3D Integrated Systems using a novel plasma‐FIB system
AIP Conf. Proc. 1395, 269–273 (2011)
https://doi.org/10.1063/1.3657902
Advanced Monitoring of Trace Metals Applied to Contamination Reduction of Silicon Device Processing
AIP Conf. Proc. 1395, 227–230 (2011)
https://doi.org/10.1063/1.3657896
Nanomechanical Characterization and Metrology for Low‐k and ULK Materials
AIP Conf. Proc. 1395, 240–248 (2011)
https://doi.org/10.1063/1.3657898
Advances in CD‐Metrology (CD‐SAXS, Mueller Matrix based Scatterometry, and SEM)
AIP Conf. Proc. 1395, 298–304 (2011)
https://doi.org/10.1063/1.3657906
Hybrid Metrology & 3D‐AFM Enhancement for CD Metrology Dedicated to 28 nm Node and Below Requirements
AIP Conf. Proc. 1395, 290–297 (2011)
https://doi.org/10.1063/1.3657905
Joint Research on Scatterometry and AFM Wafer Metrology
Bernd Bodermann; Egbert Buhr; Hans‐Ulrich Danzebrink; Markus Bär; Frank Scholze; Michael Krumrey; Matthias Wurm; Petr Klapetek; Poul‐Erik Hansen; Virpi Korpelainen; Marijn van Veghel; Andrew Yacoot; Samuli Siitonen; Omar El Gawhary; Sven Burger; Toni Saastamoinen
AIP Conf. Proc. 1395, 319–323 (2011)
https://doi.org/10.1063/1.3657910
Advanced Use of Therma‐Probe for Ultra‐Shallow Junction Monitoring
AIP Conf. Proc. 1395, 208–211 (2011)
https://doi.org/10.1063/1.3657892
Micro Roughness Determination Of Periodic Microelectronics Structures Using Optical Far Field Measurements
AIP Conf. Proc. 1395, 314–318 (2011)
https://doi.org/10.1063/1.3657909
Fundamental Limits of Optical Patterned Defect Metrology
AIP Conf. Proc. 1395, 333–342 (2011)
https://doi.org/10.1063/1.3657912
Overview of Mask Metrology
Bryan J. Rice; Vibhu Jindal; C. C. Lin; Jenah Harris‐Jones; Hyuk Joo Kwon; Hsing‐Chien Ma; Michael Goldstein; Yau‐Wai Chan; Frank Goodwin
AIP Conf. Proc. 1395, 281–289 (2011)
https://doi.org/10.1063/1.3657904
A Novel X‐ray Diffraction and Reflectivity Tool for Front‐End of Line Metrology
AIP Conf. Proc. 1395, 198–203 (2011)
https://doi.org/10.1063/1.3657890
MOTIS: A Focused Ion Beam Source Based On Laser‐Cooled Atoms
AIP Conf. Proc. 1395, 85–89 (2011)
https://doi.org/10.1063/1.3657870
Measurement of Nanograin Orientations: Application to Cu Interconnects
G. Brunetti; R. Galand; J. L. Rouvière; L. Clément; C. Cayron; E. F. Rauch; D. Robert; J. F. Martin; F. Bertin; A. Chabli
AIP Conf. Proc. 1395, 264–268 (2011)
https://doi.org/10.1063/1.3657901
UV‐Photoreflectance and Raman Characterization of Strain Relaxation in Si on Silicon‐Germanium Films
AIP Conf. Proc. 1395, 165–170 (2011)
https://doi.org/10.1063/1.3657884
SiC Epitaxial Layer Resistivity Monitoring; A look at Existing and Novel Electrical Methods
AIP Conf. Proc. 1395, 161–164 (2011)
https://doi.org/10.1063/1.3657883
Analysis of the Noble Metals on Silicon Wafers by Chemical Collection and ICPMS
AIP Conf. Proc. 1395, 222–226 (2011)
https://doi.org/10.1063/1.3657895
Investigation of Boron Redistribution during Silicidation in using Atom Probe Tomography
AIP Conf. Proc. 1395, 74–79 (2011)
https://doi.org/10.1063/1.3657868
Line Edge Roughness of Directed Self‐Assembly PS‐PMMA Block Copolymers—A Candidate for Future Lithography
AIP Conf. Proc. 1395, 305–308 (2011)
https://doi.org/10.1063/1.3657907
Nanoelectronics and More‐than‐Moore at IMEC
AIP Conf. Proc. 1395, 24–30 (2011)
https://doi.org/10.1063/1.3657862
High Resolution Multiwavelength μ‐Raman Spectroscopy for Nanoelectronic Material Characterization Applications
AIP Conf. Proc. 1395, 128–133 (2011)
https://doi.org/10.1063/1.3657878
Recent Advances In 2D‐Band Structure Imaging By k‐PEEM and Prospects For Technological Materials
AIP Conf. Proc. 1395, 95–99 (2011)
https://doi.org/10.1063/1.3657872
The Impact Of Organic Contamination On The Oxide‐Silicon Interface
D. Codegoni; M. L. Polignano; L. Castellano; G. Borionetti; F. Bonoli; A. Nutsch; A. Leibold; M. Otto
AIP Conf. Proc. 1395, 217–221 (2011)
https://doi.org/10.1063/1.3657894
Atomic Layer Deposited as Characterized Reference Samples for Nanolayer Metrology
AIP Conf. Proc. 1395, 193–197 (2011)
https://doi.org/10.1063/1.3657889
The Protocol Of KFM Characterization On Cross‐section Of CdS/CdTe Thin Film Solar Cell
L. You; N. Chevalier; S. Bernardi; E. Martinez; D. Mariolle; G. Feuillet; M. Kogelschatz; G. Bremond; A. Chabli; F. Bertin
AIP Conf. Proc. 1395, 118–122 (2011)
https://doi.org/10.1063/1.3657876
Reliability Testing of Advanced Interconnect Materials
AIP Conf. Proc. 1395, 259–263 (2011)
https://doi.org/10.1063/1.3657900
Fourier Scatterometry for Characterization of Sub‐wavelength Periodic Two Photon Polymerization Structures
AIP Conf. Proc. 1395, 324–329 (2011)
https://doi.org/10.1063/1.3657911
A Traceable Scatterometry Measurement of a Silicon Line Grating
AIP Conf. Proc. 1395, 309–313 (2011)
https://doi.org/10.1063/1.3657908
Characterization Of Nanodevices By STEM Tomography
AIP Conf. Proc. 1395, 100–104 (2011)
https://doi.org/10.1063/1.3657873
The implementation of reflective assessment using Gibbs’ reflective cycle in assessing students’ writing skill
Lala Nurlatifah, Pupung Purnawarman, et al.
Inkjet- and flextrail-printing of silicon polymer-based inks for local passivating contacts
Zohreh Kiaee, Andreas Lösel, et al.
Effect of coupling agent type on the self-cleaning and anti-reflective behaviour of advance nanocoating for PV panels application
Taha Tareq Mohammed, Hadia Kadhim Judran, et al.