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Photoinduced absorption spectra in amorphous Si:H and Ge:H and microcrystalline Si:H

Z. Vardeny; D. Pfost; Hsian‐na Liu; J. Tauc

AIP Conf. Proc. 120, 1–7 (1984) https://doi.org/10.1063/1.34741

Abstract

View articletitled, Photoinduced absorption spectra in amorphous Si:H and Ge:H and microcrystalline Si:H

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Photoinduced absorption and photoinduced absorption‐detected ESR in P‐doped a‐Si:H

I. Hirabayashi; K. Morigaki; S. Yamasaki; K. Tanaka

AIP Conf. Proc. 120, 8–15 (1984) https://doi.org/10.1063/1.34724

Abstract

View articletitled, Photoinduced absorption and photoinduced absorption‐detected ESR in P‐doped a‐Si:H

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Correlation of optical and thermal emission processes for bound‐to‐free transitions from mobility gap states in doped hydrogenerated amorphous silicon

A. V. Gelatos; J. D. Cohen; J. P. Harbison

AIP Conf. Proc. 120, 16–23 (1984) https://doi.org/10.1063/1.34735

Abstract

View articletitled, Correlation of optical and thermal emission processes for bound‐to‐free transitions from mobility gap states in doped hydrogenerated amorphous silicon

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Photoconductivity of intrinsic and doped a‐Si:H from 0.1 to 1.9 eV

T. Inushima; M. H. Brodsky; J. Kanicki; R. J. Serino

AIP Conf. Proc. 120, 24–31 (1984) https://doi.org/10.1063/1.34748

Abstract

View articletitled, Photoconductivity of intrinsic and doped a‐Si:H from 0.1 to 1.9 eV

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Photo‐depopulation‐induced ESR measurement of deep gap states in a‐Si:H

D. K. Biegelsen; N. M. Johnson

AIP Conf. Proc. 120, 32–39 (1984) https://doi.org/10.1063/1.34760

Abstract

View articletitled, Photo‐depopulation‐induced ESR measurement of deep gap states in a‐Si:H

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Photoconductivity and recombination in amorphous silicon alloys

M. Hack; S. Guha; M. Shur

AIP Conf. Proc. 120, 40–47 (1984) https://doi.org/10.1063/1.34771

Abstract

View articletitled, Photoconductivity and recombination in amorphous silicon alloys

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Photovoltaic detection of magnetic resonance in a‐Si:H solar cells

K. P. Homewood; B. C. Cavenett; C. van Berkel; W. E. Spear; P. G. LeComber

AIP Conf. Proc. 120, 48–54 (1984) https://doi.org/10.1063/1.34718

Abstract

View articletitled, Photovoltaic detection of magnetic resonance in a‐Si:H solar cells

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Systematic trends in the energies of dangling bond defect states in a‐Si alloys containing C, N and O

G. Lucovsky; S. Y. Lin

AIP Conf. Proc. 120, 55–62 (1984) https://doi.org/10.1063/1.34719

Abstract

View articletitled, Systematic trends in the energies of dangling bond defect states in a‐Si alloys containing C, N and O

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Unified theory of bonding at defects and dopants in amorphous semiconductors

J. Robertson

AIP Conf. Proc. 120, 63–69 (1984) https://doi.org/10.1063/1.34720

Abstract

View articletitled, Unified theory of bonding at defects and dopants in amorphous semiconductors

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Optical determination of the effective correlation energy of the dangling bond in hydrogenated amorphous silicon

David Adler

AIP Conf. Proc. 120, 70–77 (1984) https://doi.org/10.1063/1.34721

Abstract

View articletitled, Optical determination of the effective correlation energy of the dangling bond in hydrogenated amorphous silicon

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Photoinduced paramagnetic centers in a‐SiO₂

J. H. Stathis; M. A. Kastner

AIP Conf. Proc. 120, 78–85 (1984) https://doi.org/10.1063/1.34722

Abstract

View articletitled, Photoinduced paramagnetic centers in a‐SiO2

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Paramagnetic states in chalcogenide glasses induced by near mid‐gap infrared radiation

S. G. Bishop; J. A. Freitas, Jr.; U. Strom

AIP Conf. Proc. 120, 86–93 (1984) https://doi.org/10.1063/1.34723

Abstract

View articletitled, Paramagnetic states in chalcogenide glasses induced by near mid‐gap infrared radiation

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Transient photo‐induced absorption spectroscopy in a‐As₂Se₃ in the presence of strong bias illumination

Don Monroe; M. A. Kastner

AIP Conf. Proc. 120, 94–101 (1984) https://doi.org/10.1063/1.34725

Abstract

View articletitled, Transient photo‐induced absorption spectroscopy in a‐As2Se3 in the presence of strong bias illumination

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Picosecond optical generation and detection of phonon waves in a‐As₂Te₃

C. Thomsen; J. Strait; Z. Vardeny; H. J. Maris; J. Tauc; J. J. Hauser

AIP Conf. Proc. 120, 102–109 (1984) https://doi.org/10.1063/1.34726

Abstract

View articletitled, Picosecond optical generation and detection of phonon waves in a‐As2Te3

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Analysis of a‐As₂Se₃ transient photocurrents in the long‐time regime

Guy J. Adriaenssens; Herman Michiel

AIP Conf. Proc. 120, 110–116 (1984) https://doi.org/10.1063/1.34727

Abstract

View articletitled, Analysis of a‐As2Se3 transient photocurrents in the long‐time regime

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Metastable photoenhanced thermal generation in a‐SeTe alloys

M. Abkowitz; G. M. T. Foley; J. M. Markovics; A. C. Palumbo

AIP Conf. Proc. 120, 117–124 (1984) https://doi.org/10.1063/1.34728

Abstract

View articletitled, Metastable photoenhanced thermal generation in a‐SeTe alloys

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IR‐induced transients of photoluminescence and photoconductivity in a‐Si:H

R. Carius; W. Fuhs

AIP Conf. Proc. 120, 125–132 (1984) https://doi.org/10.1063/1.34729

Abstract

View articletitled, IR‐induced transients of photoluminescence and photoconductivity in a‐Si:H

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Infrared modulation of photoluminescence in glow discharge amorphous silicon

C. Varmazis; M. D. Hirsch; P. E. Vanier

AIP Conf. Proc. 120, 133–140 (1984) https://doi.org/10.1063/1.34730

Abstract

View articletitled, Infrared modulation of photoluminescence in glow discharge amorphous silicon

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Time‐resolved luminescence, ODMR and light‐induced effects in a‐Si:H films prepared by glow‐discharge decomposition of disilane

M. Yoshida; K. Morigaki; I. Hirabayashi; H. Ohta; A. Amamou; S. Nitta

AIP Conf. Proc. 120, 141–148 (1984) https://doi.org/10.1063/1.34731

Abstract

View articletitled, Time‐resolved luminescence, ODMR and light‐induced effects in a‐Si:H films prepared by glow‐discharge decomposition of disilane

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The role of dangling bonds in radiative and nonradiative processes in a‐Si:H

B. A. Wilson; A. M. Sergent; J. P. Harbison

AIP Conf. Proc. 120, 149–156 (1984) https://doi.org/10.1063/1.34732

Abstract

View articletitled, The role of dangling bonds in radiative and nonradiative processes in a‐Si:H

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Time resolved radiative and nonradiative recombination in a‐Si:H

U. Strom; J. C. Culbertson; P. B. Klein; S. A. Wolf

AIP Conf. Proc. 120, 157–162 (1984) https://doi.org/10.1063/1.34733

Abstract

View articletitled, Time resolved radiative and nonradiative recombination in a‐Si:H

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Picosecond photoluminescence as a probe of band‐tail thermalization in a‐Si:H

T. E. Orlowski; B. A. Weinstein; H. Scher

AIP Conf. Proc. 120, 163–169 (1984) https://doi.org/10.1063/1.34734

Abstract

View articletitled, Picosecond photoluminescence as a probe of band‐tail thermalization in a‐Si:H

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A comparison of photoinduced absorption and photoluminescence measurements in a‐Si:H

R. W. Collins; W. J. Biter

AIP Conf. Proc. 120, 170–177 (1984) https://doi.org/10.1063/1.34736

Abstract

View articletitled, A comparison of photoinduced absorption and photoluminescence measurements in a‐Si:H

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Metastable carriers in a‐Si:H a study by IR stimulated photoluminescence and photoconductivity

F. Boulitrop

AIP Conf. Proc. 120, 178–182 (1984) https://doi.org/10.1063/1.34737

Abstract

View articletitled, Metastable carriers in a‐Si:H a study by IR stimulated photoluminescence and photoconductivity

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Triplet photoluminescence in crystalline chalcogenide semiconductors

L. H. Robins; M. A. Kastner

AIP Conf. Proc. 120, 183–188 (1984) https://doi.org/10.1063/1.34738

Abstract

View articletitled, Triplet photoluminescence in crystalline chalcogenide semiconductors

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Luminescence and photo‐effects in obliquely deposited a‐Se‐Ge films

P. K. Bhat; T. M. Searle; I. G. Austin; K. L. Chopra

AIP Conf. Proc. 120, 189–196 (1984) https://doi.org/10.1063/1.34739

Abstract

View articletitled, Luminescence and photo‐effects in obliquely deposited a‐Se‐Ge films

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Recombination kinetics in amorphous semiconductors

Marvin Silver; David Adler

AIP Conf. Proc. 120, 197–204 (1984) https://doi.org/10.1063/1.34740

Abstract

View articletitled, Recombination kinetics in amorphous semiconductors

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Dependence of the metastable optically‐induced ESR in a‐Si:H on temperature and power

Charles Lee; W. D. Ohlsen; P. C. Taylor; H. S. Ullal; G. P. Ceasar

AIP Conf. Proc. 120, 205–212 (1984) https://doi.org/10.1063/1.34742

Abstract

View articletitled, Dependence of the metastable optically‐induced ESR in a‐Si:H on temperature and power

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The kinetics of formation and annealing of light induced defects in hydrogenated amorphous silicon

M. Stutzmann; W. B. Jackson; C. C. Tsai

AIP Conf. Proc. 120, 213–220 (1984) https://doi.org/10.1063/1.34743

Abstract

View articletitled, The kinetics of formation and annealing of light induced defects in hydrogenated amorphous silicon

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Light‐induced creation of defects and related phenomena in silicon‐based amorphous semiconductors

A. Morimoto; H. Yokomichi; T. Atoji; M. Kumeda; I. Watanabe; T. Shimizu

AIP Conf. Proc. 120, 221–228 (1984) https://doi.org/10.1063/1.34744

Abstract

View articletitled, Light‐induced creation of defects and related phenomena in silicon‐based amorphous semiconductors

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Search for reversible light‐induced changes in the Si‐H absorption bands of a‐Si:H

H. Fritzsche; J. Kakalios; D. Bernstein

AIP Conf. Proc. 120, 229–233 (1984) https://doi.org/10.1063/1.34745

Abstract

View articletitled, Search for reversible light‐induced changes in the Si‐H absorption bands of a‐Si:H

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The effects of light soaking on a‐Si:H films containing impurities

D. E. Carlson; A. Catalano; R. V. D’Aiello; C. R. Dickson; R. S. Oswald

AIP Conf. Proc. 120, 234–241 (1984) https://doi.org/10.1063/1.34746

Abstract

View articletitled, The effects of light soaking on a‐Si:H films containing impurities

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The Staebler‐Wronski effect in undoped a‐Si:H: its intrinsic nature and the influence of impurities

C. C. Tsai; M. Stutzmann; W. B. Jackson

AIP Conf. Proc. 120, 242–249 (1984) https://doi.org/10.1063/1.34747

Abstract

View articletitled, The Staebler‐Wronski effect in undoped a‐Si:H: its intrinsic nature and the influence of impurities

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Gap states dynamics observed in light soaked P‐doped a‐Si:H

H. Okushi; M. Itoh; T. Okuno; Y. Hosokawa; S. Yamasaki; K. Tanaka

AIP Conf. Proc. 120, 250–257 (1984) https://doi.org/10.1063/1.34749

Abstract

View articletitled, Gap states dynamics observed in light soaked P‐doped a‐Si:H

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Photodarkening and photobleaching in a‐C:H films

S. Iida; T. Ohtaki; T. Seki

AIP Conf. Proc. 120, 258–265 (1984) https://doi.org/10.1063/1.34750

Abstract

View articletitled, Photodarkening and photobleaching in a‐C:H films

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Light‐induced effect in a‐Si_xC_1−x:H films

Chen Guanghua; Zhang Fangging; Wang Yinyue; Wang Huisheng; Xu Xixiang; T. Shimizu

AIP Conf. Proc. 120, 266–271 (1984) https://doi.org/10.1063/1.34751

Abstract

View articletitled, Light‐induced effect in a‐SixC1−x:H films

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Photoconductivity detected S‐W related defect levels in a‐Si:H

A. Tříska; M. Vaněček; O. S̆tika; J. Stuchlík; A. Kosarev; J. Kočka

AIP Conf. Proc. 120, 272–279 (1984) https://doi.org/10.1063/1.34752

Abstract

View articletitled, Photoconductivity detected S‐W related defect levels in a‐Si:H

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Light induced change in photoluminescence intensity of hydrogenated amorphous silicon

Jin Jang; Choochon Lee

AIP Conf. Proc. 120, 280–287 (1984) https://doi.org/10.1063/1.34753

Abstract

View articletitled, Light induced change in photoluminescence intensity of hydrogenated amorphous silicon

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Optically induced changes in photoluminescence in amorphous Si:H

P. K. Bhat; T. M. Searle; I. G. Austin

AIP Conf. Proc. 120, 288–295 (1984) https://doi.org/10.1063/1.34754

Abstract

View articletitled, Optically induced changes in photoluminescence in amorphous Si:H

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The effect of extended light exposure on the Urbach tail and the subbandgap absorption in a‐Si:H

Daxing Han; H. Fritzsche

AIP Conf. Proc. 120, 296–302 (1984) https://doi.org/10.1063/1.34755

Abstract

View articletitled, The effect of extended light exposure on the Urbach tail and the subbandgap absorption in a‐Si:H

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Difference in the influence of oxygen and nitrogen on the light induced effect

N. Nakamura; S. Tsuda; T. Takahama; M. Nishikuni; K. Watanabe; M. Ohnishi; Y. Kuwano

AIP Conf. Proc. 120, 303–310 (1984) https://doi.org/10.1063/1.34756

Abstract

View articletitled, Difference in the influence of oxygen and nitrogen on the light induced effect

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Influence of bias and photo stress on a‐Si:H diodes with nin‐ and pip‐structures

W. Krühler; H. Pfleiderer; R. Plättner; W. Stetter

AIP Conf. Proc. 120, 311–317 (1984) https://doi.org/10.1063/1.34757

Abstract

View articletitled, Influence of bias and photo stress on a‐Si:H diodes with nin‐ and pip‐structures

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The effect of dopants on the stability of a‐Si solar cells

H. Sakai; A. Asano; M. Nishiura; M. Kamiyama; Y. Uchida; H. Haruki

AIP Conf. Proc. 120, 318–325 (1984) https://doi.org/10.1063/1.34758

Abstract

View articletitled, The effect of dopants on the stability of a‐Si solar cells

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Optically detected ESR of luminescence centers in a‐As₂S₃

T. Tada; H. Suzuki; K. Murayama; T. Ninomiya

AIP Conf. Proc. 120, 326–332 (1984) https://doi.org/10.1063/1.34759

Abstract

View articletitled, Optically detected ESR of luminescence centers in a‐As2S3

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Optically‐induced ESR and absorption edge shift in GeS_x glasses

J. Shirafuji; N. Kumagai; Y. Inuishi

AIP Conf. Proc. 120, 333–340 (1984) https://doi.org/10.1063/1.34761

Abstract

View articletitled, Optically‐induced ESR and absorption edge shift in GeSx glasses

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The conduction band of hydrogenated amorphous silicon

W. B. Jackson; S.‐J. Oh; C. C. Tsai; J. W. Allen

AIP Conf. Proc. 120, 341–348 (1984) https://doi.org/10.1063/1.34762

Abstract

View articletitled, The conduction band of hydrogenated amorphous silicon

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Optical properties of a‐Ge:H‐Structural disorder and H alloying

P. D. Persans; A. F. Ruppert; G. D. Cody; B. G. Brooks; W. Lanford

AIP Conf. Proc. 120, 349–355 (1984) https://doi.org/10.1063/1.34763

Abstract

View articletitled, Optical properties of a‐Ge:H‐Structural disorder and H alloying

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Electro‐optical effects on the absorption edge of a‐Si:H

U. Mescheder; G. Weiser

AIP Conf. Proc. 120, 356–363 (1984) https://doi.org/10.1063/1.34764

Abstract

View articletitled, Electro‐optical effects on the absorption edge of a‐Si:H

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Photoconductivity and photoinduced absorption in a‐Si:F and a‐Si:H

M. Janai; R. Weil; B. Pratt; Z. Vardeny; M. Olshaker

AIP Conf. Proc. 120, 364–370 (1984) https://doi.org/10.1063/1.34765

Abstract

View articletitled, Photoconductivity and photoinduced absorption in a‐Si:F and a‐Si:H

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Interband optical absorption in amorphous semiconductors

Morrel H. Cohen; Costas M. Soukoulis; E. N. Economou

AIP Conf. Proc. 120, 371–378 (1984) https://doi.org/10.1063/1.34766

Abstract

View articletitled, Interband optical absorption in amorphous semiconductors

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Electronic properties of strained bonds in amorphous silicon: The origin of the band‐tail states?

L. Schweitzer; M. Scheffler

AIP Conf. Proc. 120, 379–385 (1984) https://doi.org/10.1063/1.34767

Abstract

View articletitled, Electronic properties of strained bonds in amorphous silicon: The origin of the band‐tail states?

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Structural order and the Urbach slope in amorphous phosphorus

L. J. Pilione; R. J. Pomian; J. S. Lannin

AIP Conf. Proc. 120, 386–393 (1984) https://doi.org/10.1063/1.34768

Abstract

View articletitled, Structural order and the Urbach slope in amorphous phosphorus

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Electronic structure of amorphous semiconductor heterojunctions by photoemission and photoabsorption spectroscopy

B. Abeles; I. Wagner; W. Eberhardt; J. Stöhr; H. Stasiewski; F. Sette

AIP Conf. Proc. 120, 394–401 (1984) https://doi.org/10.1063/1.34769

Abstract

View articletitled, Electronic structure of amorphous semiconductor heterojunctions by photoemission and photoabsorption spectroscopy

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Photoemission studies of amorphous silicon heterostructures

F. Patella; F. Evangelisti; P. Fiorini; P. Perfetti; C. Quaresima; M. K. Kelly; R. A. Riedel; G. Margaritondo

AIP Conf. Proc. 120, 402–409 (1984) https://doi.org/10.1063/1.34770

Abstract

View articletitled, Photoemission studies of amorphous silicon heterostructures

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Amorphous silicon heterojunctions studied by transient photoconductivity

R. A. Street; M. J. Thompson

AIP Conf. Proc. 120, 410–416 (1984) https://doi.org/10.1063/1.34772

Abstract

View articletitled, Amorphous silicon heterojunctions studied by transient photoconductivity

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Photoluminescence in amorphous silicon/amorphous silicon nitride double heterostructures

T. Tiedje; B. Abeles; B. G. Brooks

AIP Conf. Proc. 120, 417–424 (1984) https://doi.org/10.1063/1.34773

Abstract

View articletitled, Photoluminescence in amorphous silicon/amorphous silicon nitride double heterostructures

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Doping modulated amorphous semiconductors

J. Kakalios; H. Fritzsche; K. L. Narashimhan

AIP Conf. Proc. 120, 425–432 (1984) https://doi.org/10.1063/1.34774

Abstract

View articletitled, Doping modulated amorphous semiconductors

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Electroabsorption measurements of interface charges in a‐Si:H/a‐SiN_x:H superlattices

C. B. Roxlo; T. Tiedje; B. Abeles

AIP Conf. Proc. 120, 433–440 (1984) https://doi.org/10.1063/1.34775

Abstract

View articletitled, Electroabsorption measurements of interface charges in a‐Si:H/a‐SiNx:H superlattices

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Optical and raman investigation of amorphous polyphosphides

D. Olego; R. Schachter; J. Baumann; M. Kuck; S. Gersten

AIP Conf. Proc. 120, 441–448 (1984) https://doi.org/10.1063/1.34776

Abstract

View articletitled, Optical and raman investigation of amorphous polyphosphides

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Pressure induced structural change of clusters in chalcogenide glasses

Kazuo Murase; Toshiaki Fukunaga

AIP Conf. Proc. 120, 449–456 (1984) https://doi.org/10.1063/1.34777

Abstract

View articletitled, Pressure induced structural change of clusters in chalcogenide glasses

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Reversible and metastable changes in the raman spectrum of GeS₂ glass induced by compression

B. A. Weinstein; M. L. Slade

AIP Conf. Proc. 120, 457–464 (1984) https://doi.org/10.1063/1.34778

Abstract

View articletitled, Reversible and metastable changes in the raman spectrum of GeS2 glass induced by compression

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Raman scattering, laser annealing and pressure‐optical studies of ion beam deposited amorphous carbon films

S. K. Hark; M. A. Machonkin; F. Jansen; M. L. Slade; B. A. Weinstein

AIP Conf. Proc. 120, 465–472 (1984) https://doi.org/10.1063/1.34715

Abstract

View articletitled, Raman scattering, laser annealing and pressure‐optical studies of ion beam deposited amorphous carbon films

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Spin polarized photoemission as a sensitive tool to study structural surface phase transitions

F. Meier; D. Pescia

AIP Conf. Proc. 120, 473–477 (1984) https://doi.org/10.1063/1.34716

Abstract

View articletitled, Spin polarized photoemission as a sensitive tool to study structural surface phase transitions

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Review of metastable defects in a‐Si:H

H. Fritzsche

AIP Conf. Proc. 120, 478–485 (1984) https://doi.org/10.1063/1.34717

Abstract

View articletitled, Review of metastable defects in a‐Si:H

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