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Front Matter for Volume 1129

AIP Conf. Proc. 1129, frontmatter (2009) https://doi.org/10.1063/v1129.frontmatter

View articletitled, Front Matter for Volume 1129

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Back Matter for Volume 1129

AIP Conf. Proc. 1129, backmatter (2009) https://doi.org/10.1063/v1129.backmatter

View articletitled, Back Matter for Volume 1129

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Giant enhancement of low‐frequency noise as precursor for the onset of a high‐frequency instability

P. Shiktorov; E. Starikov; V. Gružinskis; L. Varani; L. Reggiani

AIP Conf. Proc. 1129, 179–182 (2009) https://doi.org/10.1063/1.3140424

Abstract

View articletitled, Giant enhancement of low‐frequency noise as precursor for the onset of a high‐frequency instability

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Extreme Value Analysis of Heart Beat Fluctuations

C. Pennetta; S. Conte

AIP Conf. Proc. 1129, 545–548 (2009) https://doi.org/10.1063/1.3140531

Abstract

View articletitled, Extreme Value Analysis of Heart Beat Fluctuations

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A novel numerical approach for the frequency‐domain calculation of oscillator noise

F. L. Traversa; F. Bonani

AIP Conf. Proc. 1129, 497–500 (2009) https://doi.org/10.1063/1.3140514

Abstract

View articletitled, A novel numerical approach for the frequency‐domain calculation of oscillator noise

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Complexes Of Defects As The Source Of 1/F Noise In GaAs Based Devices

Evgeny I. Shmelev; Arkady V. Yakimov

AIP Conf. Proc. 1129, 65–68 (2009) https://doi.org/10.1063/1.3140560

Abstract

View articletitled, Complexes Of Defects As The Source Of 1/F Noise In GaAs Based Devices

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Monte Carlo Study of Diffusion Noise Reduction in GaAs Operating under Periodic Conditions

D. Persano Adorno; N. Pizzolato; B. Spagnolo

AIP Conf. Proc. 1129, 121–124 (2009) https://doi.org/10.1063/1.3140409

Abstract

View articletitled, Monte Carlo Study of Diffusion Noise Reduction in GaAs Operating under Periodic Conditions

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Non Equilibrium Fluctuations In The Degenerated Polarizable Plasma

V. V. Belyi; Yu. A. Kukharenko

AIP Conf. Proc. 1129, 41–44 (2009) https://doi.org/10.1063/1.3140489

Abstract

View articletitled, Non Equilibrium Fluctuations In The Degenerated Polarizable Plasma

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A fluctuation‐based probe to athermal phase transitions

U. Chandni; Arindam Ghosh; H. S. Vijaya; S. Mohan

AIP Conf. Proc. 1129, 511–514 (2009) https://doi.org/10.1063/1.3140520

Abstract

View articletitled, A fluctuation‐based probe to athermal phase transitions

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Optimal 2 DEG Density for Plasmon‐Assisted Ultrafast Decay of Hot Phonons

E. Šermukšnis; J. Liberis; A. Matulionis

AIP Conf. Proc. 1129, 245–248 (2009) https://doi.org/10.1063/1.3140442

Abstract

View articletitled, Optimal 2 DEG Density for Plasmon‐Assisted Ultrafast Decay of Hot Phonons

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Asymmetry of the excess finite‐frequency noise

I. Safi

AIP Conf. Proc. 1129, 431–434 (2009) https://doi.org/10.1063/1.3140492

Abstract

View articletitled, Asymmetry of the excess finite‐frequency noise

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Shot noise and linear conductance in a transport through quantum dot coupled to polarized leads

A. Golub

AIP Conf. Proc. 1129, 419–422 (2009) https://doi.org/10.1063/1.3140488

Abstract

View articletitled, Shot noise and linear conductance in a transport through quantum dot coupled to polarized leads

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Low Frequency Noise in 2 DEG Channel of AlGaN/GaN Heterostructures Scaled to Nanosize Width

Svetlana A. Vitusevich; Mykhaylo V. Petrychuk; Viktor A. Sydoruk; Thomas Schäpers; Hilde Hardtdegen; Alexander E. Belyaev; Andreas Offenhäusser; Norbert Klein

AIP Conf. Proc. 1129, 487–490 (2009) https://doi.org/10.1063/1.3140507

Abstract

View articletitled, Low Frequency Noise in 2 DEG Channel of AlGaN/GaN Heterostructures Scaled to Nanosize Width

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Plasmonic noise in semiconductor layered structures

J.‐F. Millithaler; L. Reggiani

AIP Conf. Proc. 1129, 215–220 (2009) https://doi.org/10.1063/1.3140433

Abstract

View articletitled, Plasmonic noise in semiconductor layered structures

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Enlargement of a low‐dimensional stochastic web

S. M. Soskin; I. A. Khovanov; R. Mannella; P. V. E. McClintock

AIP Conf. Proc. 1129, 17–20 (2009) https://doi.org/10.1063/1.3140425

Abstract

View articletitled, Enlargement of a low‐dimensional stochastic web

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Noise Enhanced THz Rectification Tuned by Geometry in Planar Asymmetric Nanodiodes

I. Iñiguez‐de‐la‐Torre; H. Rodilla; J. Mateos; D. Pardo; A. M. Song; T. González

AIP Conf. Proc. 1129, 229–232 (2009) https://doi.org/10.1063/1.3140437

Abstract

View articletitled, Noise Enhanced THz Rectification Tuned by Geometry in Planar Asymmetric Nanodiodes

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Impact of the TiN Layer Thickness on the Low‐Frequency Noise and Static Device Performance of n‐Channel MuGFETs

M. Rodrigues; A. Mercha; N. Collaert; E. Simoen; C. Claeys; J. A. Martino

AIP Conf. Proc. 1129, 167–170 (2009) https://doi.org/10.1063/1.3140421

Abstract

View articletitled, Impact of the TiN Layer Thickness on the Low‐Frequency Noise and Static Device Performance of n‐Channel MuGFETs

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Monte Carlo analysis of noise spectra in InAs channels from diffusive to ballistic regime

G. Sabatini; H. Marinchio; L. Varani; C. Palermo; J. F. Millithaler; L. Reggiani; H. Rodilla; T. González; S. Pérez; J. Mateos

AIP Conf. Proc. 1129, 345–348 (2009) https://doi.org/10.1063/1.3140470

Abstract

View articletitled, Monte Carlo analysis of noise spectra in InAs channels from diffusive to ballistic regime

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Shot noise suppression in p‐n junctions due to carrier recombination

I. A. Maione; G. Fiori; L. Guidi; G. Basso; M. Macucci; B. Pellegrini

AIP Conf. Proc. 1129, 221–224 (2009) https://doi.org/10.1063/1.3140435

Abstract

View articletitled, Shot noise suppression in p‐n junctions due to carrier recombination

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Flow Noise of Driven Vortex Matter in Amorphous Superconducting Films

S. Okuma; Y. Suzuki; N. Kokubo

AIP Conf. Proc. 1129, 93–96 (2009) https://doi.org/10.1063/1.3140566

Abstract

View articletitled, Flow Noise of Driven Vortex Matter in Amorphous Superconducting Films

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Analysis Of Current Noise During The Resistive Transition Of ${MgB}_{2}$ Thin Films Produced By The Application Of An External Magnetic Field

V. Andreoli; P. Mazzetti; A. Stepanescu; M. Rajteri; C. Portesi; E. Monticone; E. Taralli; C. Gandini; A. Masoero

AIP Conf. Proc. 1129, 89–92 (2009) https://doi.org/10.1063/1.3140565

Abstract

View articletitled, Analysis Of Current Noise During The Resistive Transition Of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgB</mi><mrow><mn>2</mn></mrow></msub></math> Thin Films Produced By The Application Of An External Magnetic Field

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Current fluctuations in a dissipative environment

Alessandro Braggio; Christian Flindt; Tomáš Novotný

AIP Conf. Proc. 1129, 427–430 (2009) https://doi.org/10.1063/1.3140491

Abstract

View articletitled, Current fluctuations in a dissipative environment

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Optical noise of a 1550 nm fiber laser as an underwater acoustic sensor

B. Orsal; K. Hey Tow; R. Vacher; D. Dureisseix

AIP Conf. Proc. 1129, 379–386 (2009) https://doi.org/10.1063/1.3140478

Abstract

View articletitled, Optical noise of a 1550 nm fiber laser as an underwater acoustic sensor

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Analysis Of Noise Characteristics And Noise Generation In SubTHz And THz Frequency Ranges

V. L. Vaks; A. N. Panin; S. I. Pripolzin; E. A. Sobakinskaya; D. G. Paveliev

AIP Conf. Proc. 1129, 233–236 (2009) https://doi.org/10.1063/1.3140438

Abstract

View articletitled, Analysis Of Noise Characteristics And Noise Generation In SubTHz And THz Frequency Ranges

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Experimental Study of Noise in a Frequency Synthesizer

Gurpreet Singh Sangha; Michael H. W. Hoffmann

AIP Conf. Proc. 1129, 505–508 (2009) https://doi.org/10.1063/1.3140518

Abstract

View articletitled, Experimental Study of Noise in a Frequency Synthesizer

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Quantifying Response in a Class of Nonlinear Sensors with a Noise‐Floor

A. R. Bulsara; V. In; A. Kho. P. Longhini; J. Neff; S. Baglio; B. Ando

AIP Conf. Proc. 1129, 175–178 (2009) https://doi.org/10.1063/1.3140423

Abstract

View articletitled, Quantifying Response in a Class of Nonlinear Sensors with a Noise‐Floor

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Modeling of High‐Frequency Noise in III–V Double‐Gate HFETs

B. G. Vasallo

AIP Conf. Proc. 1129, 299–304 (2009) https://doi.org/10.1063/1.3140456

Abstract

View articletitled, Modeling of High‐Frequency Noise in III–V Double‐Gate HFETs

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1/f noise, transport and percolation in carbon nanotube film field‐effect transistors: simulation and experiments

S. Soliveres; F. Martinez; A. Hoffmann; F. Pascal

AIP Conf. Proc. 1129, 85–88 (2009) https://doi.org/10.1063/1.3140564

Abstract

View articletitled, 1/f noise, transport and percolation in carbon nanotube film field‐effect transistors: simulation and experiments

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1/f noise in $0.12 μ m$ P‐MOSFETs with High‐k and metal gate fabricated in a Si Process Line on 200 mm GeOI Wafers

J. Gyani; F. Martinez; S. Soliveres; M. Valenza; C. Le Royer; E. Augendre

AIP Conf. Proc. 1129, 259–262 (2009) https://doi.org/10.1063/1.3140445

Abstract

View articletitled, 1/f noise in <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">0.12 μ</mtext><mi mathvariant="normal" xmlns="">m</mi></math> P‐MOSFETs with High‐k and metal gate fabricated in a Si Process Line on 200 mm GeOI Wafers

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Low‐Frequency Noise in Electronic Devices—Past, Present and Future

M. J. Deen; O. Marinov

AIP Conf. Proc. 1129, 197–200 (2009) https://doi.org/10.1063/1.3140429

Abstract

View articletitled, Low‐Frequency Noise in Electronic Devices—Past, Present and Future

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The Low Frequency Noise of SiC MESFETs

Jacek A. Cichosz; Alicja Konczakowska

AIP Conf. Proc. 1129, 353–356 (2009) https://doi.org/10.1063/1.3140472

Abstract

View articletitled, The Low Frequency Noise of SiC MESFETs

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Scaling Effect Of GaAs pHEMTs Small Signal And Noise Model

S. C. Huang; W. Y. Lin; Y. M. Hsin

AIP Conf. Proc. 1129, 305–308 (2009) https://doi.org/10.1063/1.3140458

Abstract

View articletitled, Scaling Effect Of GaAs pHEMTs Small Signal And Noise Model

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RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position

J. Sikula; V. Sedlakova; M. Chvatal; J. Pavelka; M. Tacano; M. Toita

AIP Conf. Proc. 1129, 205–208 (2009) https://doi.org/10.1063/1.3140431

Abstract

View articletitled, RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position

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Study of Organic Material FETs by Combined Static and Noise Measurements

Xu Yong; Takeo Minari; Kazuhito Tsukagoshi; Karlheinz Bock; Mooness Fadlallah; Gérard Ghibaudo; J. A. Chroboczek

AIP Conf. Proc. 1129, 163–166 (2009) https://doi.org/10.1063/1.3140420

Abstract

View articletitled, Study of Organic Material FETs by Combined Static and Noise Measurements

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Resistance Noise in Graphene Based Field Effect Devices

Atindra Nath Pal; Arindam Ghosh

AIP Conf. Proc. 1129, 479–482 (2009) https://doi.org/10.1063/1.3140504

Abstract

View articletitled, Resistance Noise in Graphene Based Field Effect Devices

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The consequence of continuous current branching on current‐noise spectra in field‐effect and high‐electron mobility transistors

E. Starikov; P. Shiktorov; V. Gružinskis; L. Varani; H. Marinchio; L. Reggiani

AIP Conf. Proc. 1129, 267–272 (2009) https://doi.org/10.1063/1.3140448

Abstract

View articletitled, The consequence of continuous current branching on current‐noise spectra in field‐effect and high‐electron mobility transistors

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A Very Simple Low Noise Voltage Preamplifier For High Sensitivity Noise Measurements

G. Cannatà; G. Scandurra; C. Ciofi

AIP Conf. Proc. 1129, 603–606 (2009) https://doi.org/10.1063/1.3140546

Abstract

View articletitled, A Very Simple Low Noise Voltage Preamplifier For High Sensitivity Noise Measurements

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Low Frequency Noise Evolution of AlGaN/GaN HEMT after 2000 hours of HTRB and HTO life tests

Charlotte Sury; Arnaud Curutchet; Nathalie Malbert; Nathalie Labat

AIP Conf. Proc. 1129, 625–628 (2009) https://doi.org/10.1063/1.3140552

Abstract

View articletitled, Low Frequency Noise Evolution of AlGaN/GaN HEMT after 2000 hours of HTRB and HTO life tests

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Current Collapse and Deep Levels of AlGaN/GaN Heterostructures monitored by LFN Measurements

M. Tacano; N. Tanuma; S. Yagi; H. Okumura; T. Matsui; J. Sikula

AIP Conf. Proc. 1129, 241–244 (2009) https://doi.org/10.1063/1.3140441

Abstract

View articletitled, Current Collapse and Deep Levels of AlGaN/GaN Heterostructures monitored by LFN Measurements

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Using gate voltages to tune the noise properties of a mesoscopic cavity

M. Totaro; P. Marconcini; S. Rotter; D. Logoteta; M. Macucci

AIP Conf. Proc. 1129, 409–412 (2009) https://doi.org/10.1063/1.3140486

Abstract

View articletitled, Using gate voltages to tune the noise properties of a mesoscopic cavity

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Acoustic Emission, Electroluminescence Intensity Surface Distribution and Light Fluctuations Correlation in GaAsP/GaP and InGaN/GaN structures

Vitaliy P. Veleschuk; Olexander I. Vlasenko; Oleg V. Lyashenko; Maxim P. Kysselyuk

AIP Conf. Proc. 1129, 395–398 (2009) https://doi.org/10.1063/1.3140482

Abstract

View articletitled, Acoustic Emission, Electroluminescence Intensity Surface Distribution and Light Fluctuations Correlation in GaAsP/GaP and InGaN/GaN structures

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Low Frequency Noise Characteristics and Aging Processes of High Power White Light Emitting Diodes

V. Palenskis; J. Matukas; B. Šaulys; S. Pralgauskaite; V. Jonkus

AIP Conf. Proc. 1129, 399–402 (2009) https://doi.org/10.1063/1.3140483

Abstract

View articletitled, Low Frequency Noise Characteristics and Aging Processes of High Power White Light Emitting Diodes

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1/F Noise In Si Delta‐Doped Schottky Diodes

Arkady V. Yakimov; Alexey V. Klyuev; Evgeny I. Shmelev; Arkady V. Murel; Vladimir I. Shashkin

AIP Conf. Proc. 1129, 225–228 (2009) https://doi.org/10.1063/1.3140436

Abstract

View articletitled, 1/F Noise In Si Delta‐Doped Schottky Diodes

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Low Frequency Noise Measurement of Reverse Polarized Silicon Carbide Schottky Diodes

Arkadiusz Szewczyk; Barbara Stawarz‐Graczyk

AIP Conf. Proc. 1129, 645–648 (2009) https://doi.org/10.1063/1.3140557

Abstract

View articletitled, Low Frequency Noise Measurement of Reverse Polarized Silicon Carbide Schottky Diodes

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Noise Measurement of Interacting Ferromagnetic Particles with High Resolution Hall Microprobes

K. Komatsu; D. L’Hôte; S. Nakamae; F. Ladieu; V. Mosser; A. Kerlain; M. Konczykowski; E. Dubois; V. Dupuis; R. Perzynski

AIP Conf. Proc. 1129, 153–156 (2009) https://doi.org/10.1063/1.3140418

Abstract

View articletitled, Noise Measurement of Interacting Ferromagnetic Particles with High Resolution Hall Microprobes

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Noise Harvesting

L. Gammaitoni; F. Cottone; I. Neri; H. Vocca

AIP Conf. Proc. 1129, 651–654 (2009) https://doi.org/10.1063/1.3140558

Abstract

View articletitled, Noise Harvesting

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Low‐Frequency Noise of Single Junction GaAs Solar Cell Structure

Jungil Lee; Byung‐Yong Yu; Gerard Ghibaudo; Seong‐Il Kim; Ilki Han

AIP Conf. Proc. 1129, 387–390 (2009) https://doi.org/10.1063/1.3140480

Abstract

View articletitled, Low‐Frequency Noise of Single Junction GaAs Solar Cell Structure

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Noise of Reverse Biased Solar Cells

P. Skarvada; R. Macku; P. Koktavy; M. Raska

AIP Conf. Proc. 1129, 391–394 (2009) https://doi.org/10.1063/1.3140481

Abstract

View articletitled, Noise of Reverse Biased Solar Cells

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Simulation of Microplasma Noise in PN Junctions

P. Koktavy; P. Sadovsky; M. Raska

AIP Conf. Proc. 1129, 593–596 (2009) https://doi.org/10.1063/1.3140544

Abstract

View articletitled, Simulation of Microplasma Noise in PN Junctions

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A systematic study of the impact of geometry on the low frequency noise in patterned ${La}_{0.7} {Sr}_{0.3} {MnO}_{3}$ thin films at 300 K

S. Wu; B. Guillet; L. Méchin; J. M. Routoure

AIP Conf. Proc. 1129, 125–128 (2009) https://doi.org/10.1063/1.3140410

Abstract

View articletitled, A systematic study of the impact of geometry on the low frequency noise in patterned <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>La</mi><mrow><mtext>0.7</mtext></mrow></msub><msub xmlns=""><mi>Sr</mi><mrow><mtext>0.3</mtext></mrow></msub><msub xmlns=""><mi>MnO</mi><mrow><mn>3</mn></mrow></msub></math> thin films at 300 K

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Noise maximum at trap‐filling transition in polyacenes

M. Tizzoni; A. Carbone; C. Pennetta; L. Reggiani

AIP Conf. Proc. 1129, 109–112 (2009) https://doi.org/10.1063/1.3140406

Abstract

View articletitled, Noise maximum at trap‐filling transition in polyacenes

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Modification of A. Van der Ziel relation for natural noise in diodes with non‐ideality factor of I–V characteristic $η>1$

Alexey V. Klyuev; Arkady V. Yakimov; Evgeny I. Shmelev

AIP Conf. Proc. 1129, 361–364 (2009) https://doi.org/10.1063/1.3140474

Abstract

View articletitled, Modification of A. Van der Ziel relation for natural noise in diodes with non‐ideality factor of I–V characteristic <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">η>1</mtext></math>

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A New 1/f Noise Model for Multi‐Stack Gate Dielectric MOSFETs

Zeynep Çelik‐Butler

AIP Conf. Proc. 1129, 249–254 (2009) https://doi.org/10.1063/1.3140443

Abstract

View articletitled, A New 1/f Noise Model for Multi‐Stack Gate Dielectric MOSFETs

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Impact of Advanced Gate Stack Engineering On Low Frequency Noise Performances of Planar Bulk CMOS transistors

A. Mercha; H. Okawa; A. Akheyar; E. Simoen; T. Nakabayashi; T. Y. Hoffmann

AIP Conf. Proc. 1129, 277–280 (2009) https://doi.org/10.1063/1.3140450

Abstract

View articletitled, Impact of Advanced Gate Stack Engineering On Low Frequency Noise Performances of Planar Bulk CMOS transistors

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Shot noise analysis in quasi one‐dimensional Field Effect Transistors

Alessandro Betti; Gianluca Fiori; Giuseppe Iannaccone

AIP Conf. Proc. 1129, 581–584 (2009) https://doi.org/10.1063/1.3140541

Abstract

View articletitled, Shot noise analysis in quasi one‐dimensional Field Effect Transistors

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The Methods for RTS Noise Identification

Alicja Konczakowska; Barbara Stawarz‐Graczyk

AIP Conf. Proc. 1129, 357–360 (2009) https://doi.org/10.1063/1.3140473

Abstract

View articletitled, The Methods for RTS Noise Identification

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A Semiconductor Device Noise Model: A Deterministic Approach to Semiconductor Device Current Noise for Semiclassical Transport

B. A. Noaman; C. E. Korman

AIP Conf. Proc. 1129, 569–572 (2009) https://doi.org/10.1063/1.3140537

Abstract

View articletitled, A Semiconductor Device Noise Model: A Deterministic Approach to Semiconductor Device Current Noise for Semiclassical Transport

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Magnetization fluctuations in mesoscopic conductors out of equilibrium

Rosa López; Magdalena Gelabert; David Sánchez; Llorenç Serra

AIP Conf. Proc. 1129, 461–464 (2009) https://doi.org/10.1063/1.3140500

Abstract

View articletitled, Magnetization fluctuations in mesoscopic conductors out of equilibrium

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Noise in Green Transistors (Small Slope Switches)

Christoph Jungemann

AIP Conf. Proc. 1129, 191–196 (2009) https://doi.org/10.1063/1.3140428

Abstract

View articletitled, Noise in Green Transistors (Small Slope Switches)

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Influence of Dopant Profiles and Traps on the Low Frequency Noise of Four Gate Transistors

A. Luque Rodríguez; J. A. Jiménez Tejada; J. A. López Villanueva; A. Godoy; P. Lara Bullejos; M. Gómez‐Campos

AIP Conf. Proc. 1129, 585–588 (2009) https://doi.org/10.1063/1.3140542

Abstract

View articletitled, Influence of Dopant Profiles and Traps on the Low Frequency Noise of Four Gate Transistors

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Study of the Low Frequency Noise of Metallic Emitter SiGeC Heterojunction Bipolar Transistors

F. Pascal; J. Raoult; C. Leyris

AIP Conf. Proc. 1129, 325–328 (2009) https://doi.org/10.1063/1.3140464

Abstract

View articletitled, Study of the Low Frequency Noise of Metallic Emitter SiGeC Heterojunction Bipolar Transistors

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About Quartz Crystal Resonator Noise: Recent Study

F. Sthal; S. Galliou; J. Imbaud; X. Vacheret; P. Salzenstein; E. Rubiola; G. Cibiel

AIP Conf. Proc. 1129, 607–610 (2009) https://doi.org/10.1063/1.3140547

Abstract

View articletitled, About Quartz Crystal Resonator Noise: Recent Study

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Excited States in an InAs Nanowire Double Quantum Dot measured by Time‐Resolved Charge Detection

Theodore Choi; Ivan Shorubalko; Simon Gustavsson; Silke Schön; Klaus Ensslin

AIP Conf. Proc. 1129, 449–452 (2009) https://doi.org/10.1063/1.3140496

Abstract

View articletitled, Excited States in an InAs Nanowire Double Quantum Dot measured by Time‐Resolved Charge Detection

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1/f Noise Inside a Faraday Cage

Peter H. Handel; Thomas F. George

AIP Conf. Proc. 1129, 491–494 (2009) https://doi.org/10.1063/1.3140513

Abstract

View articletitled, 1/f Noise Inside a Faraday Cage

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Nyquist Relation and Its Validity for Piezoelectric Ceramics Considering Temperature

Petr Sedlak; Jiri Majzner; Josef Sikula

AIP Conf. Proc. 1129, 141–144 (2009) https://doi.org/10.1063/1.3140415

Abstract

View articletitled, Nyquist Relation and Its Validity for Piezoelectric Ceramics Considering Temperature

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Time dependent thermal properties of disordered solids

Moyuru Ochiai

AIP Conf. Proc. 1129, 113–116 (2009) https://doi.org/10.1063/1.3140407

Abstract

View articletitled, Time dependent thermal properties of disordered solids

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High Precision Noise Measurements at Microwave Frequencies

Eugene Ivanov; Michael Tobar

AIP Conf. Proc. 1129, 611–614 (2009) https://doi.org/10.1063/1.3140548

Abstract

View articletitled, High Precision Noise Measurements at Microwave Frequencies

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Acceleration of the chaotic and noise‐induced transport in adiabatically driven spatially periodic systems

S. M. Soskin; R. Mannella; O. M. Yevtushenko; M. Filiasi

AIP Conf. Proc. 1129, 21–24 (2009) https://doi.org/10.1063/1.3140434

Abstract

View articletitled, Acceleration of the chaotic and noise‐induced transport in adiabatically driven spatially periodic systems

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New Approach To The Treatment Of Separatrix Chaos

S. M. Soskin; R. Mannella

AIP Conf. Proc. 1129, 25–28 (2009) https://doi.org/10.1063/1.3140446

Abstract

View articletitled, New Approach To The Treatment Of Separatrix Chaos

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Magnetoasymmetric noise in an Aharanov‐Bohm interferometer

David Sánchez; Jong Soo Lim; Rosa López

AIP Conf. Proc. 1129, 435–438 (2009) https://doi.org/10.1063/1.3140493

Abstract

View articletitled, Magnetoasymmetric noise in an Aharanov‐Bohm interferometer

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Fluctuation relations without micro‐reversibility in nonlinear transport

Heidi Förster; Markus Büttiker

AIP Conf. Proc. 1129, 443–448 (2009) https://doi.org/10.1063/1.3140495

Abstract

View articletitled, Fluctuation relations without micro‐reversibility in nonlinear transport

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Low Frequency Noises Of Hydrogen Sensors On The Base Of Silicon Having Nano‐Pores Layer

Z. H. Mkhitaryan; F. V. Gasparyan; A. V. Surmalyan

AIP Conf. Proc. 1129, 137–140 (2009) https://doi.org/10.1063/1.3140413

Abstract

View articletitled, Low Frequency Noises Of Hydrogen Sensors On The Base Of Silicon Having Nano‐Pores Layer

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Analysis of Quasar Radio Wave Flux Density Fluctuations and its Cosmological Meanings

Noboru Tanizuka

AIP Conf. Proc. 1129, 519–522 (2009) https://doi.org/10.1063/1.3140525

Abstract

View articletitled, Analysis of Quasar Radio Wave Flux Density Fluctuations and its Cosmological Meanings

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1/f Noise in p‐Channel Screen‐Grid Field Effect Transistors (SGrFETs) as a Device Evaluation Tool

K. Fobelets; S. L. Rumyantsev; P. W. Ding; J. E. Velazquez‐Perez

AIP Conf. Proc. 1129, 349–352 (2009) https://doi.org/10.1063/1.3140471

Abstract

View articletitled, 1/f Noise in p‐Channel Screen‐Grid Field Effect Transistors (SGrFETs) as a Device Evaluation Tool

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High frequency shot noise of phase coherent conductors

E. Zakka‐Bajjani; J. Dufouleur; P. Roche; D. C. Glattli; A. Cavanna; Y. Jin; F. Portier

AIP Conf. Proc. 1129, 413–418 (2009) https://doi.org/10.1063/1.3140487

Abstract

View articletitled, High frequency shot noise of phase coherent conductors

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Diagnostics of Forward Biased Silicon Solar Cells Using Noise Spectroscopy

R. Macku; P. Koktavy; P. Skarvada; M. Raska; P. Sadovsky

AIP Conf. Proc. 1129, 145–148 (2009) https://doi.org/10.1063/1.3140416

Abstract

View articletitled, Diagnostics of Forward Biased Silicon Solar Cells Using Noise Spectroscopy

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Low‐Frequency Noise Behavior in P‐channel SOI FinFETs Processed With Different Strain Techniques

W. Guo; R. Talmat; B. Cretu; J.‐M. Routoure; R. Carin; A. Mercha; E. Simoen; C. Claeys

AIP Conf. Proc. 1129, 295–298 (2009) https://doi.org/10.1063/1.3140454

Abstract

View articletitled, Low‐Frequency Noise Behavior in P‐channel SOI FinFETs Processed With Different Strain Techniques

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Investigation of SiGe Heterojunction Bipolar Transistor over an Extreme Temperature Range

A. Shimukovitch; P. Sakalas; M. Ramonas; M. Schroter; C. Jungemann; W. Kraus

AIP Conf. Proc. 1129, 309–312 (2009) https://doi.org/10.1063/1.3140460

Abstract

View articletitled, Investigation of SiGe Heterojunction Bipolar Transistor over an Extreme Temperature Range

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Electronic noise in high electron‐mobility transistors under photo‐excitation conditions

H. Marinchio; G. Sabatini; L. Varani; C. Palermo; P. Shiktorov; E. Starikov; V. Gružinskis; P. Ziade; Z. Kallassy

AIP Conf. Proc. 1129, 321–324 (2009) https://doi.org/10.1063/1.3140463

Abstract

View articletitled, Electronic noise in high electron‐mobility transistors under photo‐excitation conditions

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Low Frequency Noise in High‐k Dielectric MOSFETs. How Far From the Channel Are We Probing the Traps?

S. Rumyantsev; C. Young; G. Bersuker; M. Shur

AIP Conf. Proc. 1129, 255–258 (2009) https://doi.org/10.1063/1.3140444

Abstract

View articletitled, Low Frequency Noise in High‐k Dielectric MOSFETs. How Far From the Channel Are We Probing the Traps?

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A High Frequency Compact Noise Model for Double‐Gate MOSFET Devices

A. Lázaro; A. Cerdeira; B. Nae; M. Estrada; B. Iñíguez

AIP Conf. Proc. 1129, 577–580 (2009) https://doi.org/10.1063/1.3140539

Abstract

View articletitled, A High Frequency Compact Noise Model for Double‐Gate MOSFET Devices

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Investigation of Intensity and Phase Feedback Effects on the Relative Intensity Noise in Blue Laser Diodes under High Frequency Modulation

Jong Chang Yi; Hyung Uk Cho; Jong Dae Kim

AIP Conf. Proc. 1129, 367–370 (2009) https://doi.org/10.1063/1.3140475

Abstract

View articletitled, Investigation of Intensity and Phase Feedback Effects on the Relative Intensity Noise in Blue Laser Diodes under High Frequency Modulation

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Excess Noise in Transition Edge Sensors

E. Celasco; F. Gatti; R. Eggenhöffner

AIP Conf. Proc. 1129, 171–174 (2009) https://doi.org/10.1063/1.3140422

Abstract

View articletitled, Excess Noise in Transition Edge Sensors

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Noise Sources of a‐ ${Si}_{1− x} {Ge}_{x} O_{y}$ Microbolometers And Their Reduction By Forming Gas Passivation

Mukti M. Rana; Donald P. Butler

AIP Conf. Proc. 1129, 375–378 (2009) https://doi.org/10.1063/1.3140477

Abstract

View articletitled, Noise Sources of a‐<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−</mtext><mi mathvariant="normal">x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi mathvariant="normal">x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">y</mi></mrow></msub></math> Microbolometers And Their Reduction By Forming Gas Passivation

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A New Circuit Topology For The Realization Of Low Noise Voltage References

C. Ciofi; G. Scandurra; G. Cannatà

AIP Conf. Proc. 1129, 599–602 (2009) https://doi.org/10.1063/1.3140545

Abstract

View articletitled, A New Circuit Topology For The Realization Of Low Noise Voltage References

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Noise characterization of a single parameter quantized charge pump

F. Hohls; N. Maire; B. Kaestner; K. Pierz; H. W. Schumacher; R. J. Haug

AIP Conf. Proc. 1129, 465–468 (2009) https://doi.org/10.1063/1.3140501

Abstract

View articletitled, Noise characterization of a single parameter quantized charge pump

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Possible Correlation between Flicker Noise and Bias Temperature Stress

Paul‐Jürgen Wagner; Thomas Aichinger; Tibor Grasser; Michael Nelhiebel; Lode K. J. Vandamme

AIP Conf. Proc. 1129, 621–624 (2009) https://doi.org/10.1063/1.3140551

Abstract

View articletitled, Possible Correlation between Flicker Noise and Bias Temperature Stress

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Extraction and Analysis of Noise Parameters of On Wafer HEMTs up to 26.5 GHz

Alina Caddemi; Giovanni Crupi; Alessio Macchiarella

AIP Conf. Proc. 1129, 615–618 (2009) https://doi.org/10.1063/1.3140549

Abstract

View articletitled, Extraction and Analysis of Noise Parameters of On Wafer HEMTs up to 26.5 GHz

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Effect of localization on the Fano factor of cascaded tunnel barriers

P. Marconcini; M. Macucci; G. Iannaccone; B. Pellegrini

AIP Conf. Proc. 1129, 423–426 (2009) https://doi.org/10.1063/1.3140490

Abstract

View articletitled, Effect of localization on the Fano factor of cascaded tunnel barriers

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A Basis Set for Characterizing Transient Random Phenomena

Roy M. Howard

AIP Conf. Proc. 1129, 29–32 (2009) https://doi.org/10.1063/1.3140457

Abstract

View articletitled, A Basis Set for Characterizing Transient Random Phenomena

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Low‐Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures

J. Pavelka; N. Tanuma; M. Tacano; J. Šikula; P. H. Handel

AIP Conf. Proc. 1129, 183–186 (2009) https://doi.org/10.1063/1.3140426

Abstract

View articletitled, Low‐Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures

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Multi‐parameters Characterization of Electromigration Noise in Metal Interconnection

Liang He; Lei Du; Yi‐Qi Zhuang; Jun‐Lin Bao

AIP Conf. Proc. 1129, 637–640 (2009) https://doi.org/10.1063/1.3140555

Abstract

View articletitled, Multi‐parameters Characterization of Electromigration Noise in Metal Interconnection

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Noise Limitations of FET‐Based Biochemical Sensors

Peter H. Handel; Amanda M. Truong

AIP Conf. Proc. 1129, 187–190 (2009) https://doi.org/10.1063/1.3140427

Abstract

View articletitled, Noise Limitations of FET‐Based Biochemical Sensors

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Analytical Frequency‐Dependent Formulas of Excess Noise in Homogeneous Semiconductors

Chan Hyeong Park; Sung‐Min Hong

AIP Conf. Proc. 1129, 589–592 (2009) https://doi.org/10.1063/1.3140543

Abstract

View articletitled, Analytical Frequency‐Dependent Formulas of Excess Noise in Homogeneous Semiconductors

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High Frequency Noise in GaN HEMTs

J. Mateos; S. Pérez; D. Pardo; T. González

AIP Conf. Proc. 1129, 237–240 (2009) https://doi.org/10.1063/1.3140440

Abstract

View articletitled, High Frequency Noise in GaN HEMTs

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Nonlinear stochastic differential equation as the background of financial fluctuations

V. Gontis; B. Kaulakys; J. Ruseckas

AIP Conf. Proc. 1129, 563–566 (2009) https://doi.org/10.1063/1.3140536

Abstract

View articletitled, Nonlinear stochastic differential equation as the background of financial fluctuations

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$1/f$ Noise Through Retino‐Cortical Pathways Assessed By Reaction Times

José M. Medina; José A. Díaz

AIP Conf. Proc. 1129, 553–556 (2009) https://doi.org/10.1063/1.3140533

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1/f</mtext></math> Noise Through Retino‐Cortical Pathways Assessed By Reaction Times

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Oscillator Noise Analysis: Full Spectrum Evaluation Including Orbital Deviations

Sung‐Min Hong; Christoph Jungemann

AIP Conf. Proc. 1129, 501–504 (2009) https://doi.org/10.1063/1.3140516

Abstract

View articletitled, Oscillator Noise Analysis: Full Spectrum Evaluation Including Orbital Deviations

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Suppression of Random Telegraph Signal Noise in small‐area MOSFETs under switched gate and substrate bias conditions

Nicola Zanolla; Domagoj Šiprak; Marc Tiebout; Peter Baumgartner; Enrico Sangiorgi; Claudio Fiegna

AIP Conf. Proc. 1129, 201–204 (2009) https://doi.org/10.1063/1.3140430

Abstract

View articletitled, Suppression of Random Telegraph Signal Noise in small‐area MOSFETs under switched gate and substrate bias conditions

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Length Dependent Transition of the Dominant 1/f Noise Mechanism in Si‐Passivated Ge‐on‐Si pMOSFETs

E. Simoen; A. Firrincieli; F. E. Leys; R. Loo; B. De Jaeger; J. Mitard; C. Claeys

AIP Conf. Proc. 1129, 281–284 (2009) https://doi.org/10.1063/1.3140451

Abstract

View articletitled, Length Dependent Transition of the Dominant 1/f Noise Mechanism in Si‐Passivated Ge‐on‐Si pMOSFETs

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Low Frequency Noise Sources in Ge Resistances elaborated on GeOI Wafers

J. Gyani; S. Soliveres; F. Martinez; M. Valenza; C. Le Royer; E. Augendre

AIP Conf. Proc. 1129, 105–108 (2009) https://doi.org/10.1063/1.3140405

Abstract

View articletitled, Low Frequency Noise Sources in Ge Resistances elaborated on GeOI Wafers

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Noise‐assisted quantization in sensor networks

Shin Mizutani; Kenichi Arai; Peter Davis; Naoki Wakamiya; Masayuki Murata

AIP Conf. Proc. 1129, 57–60 (2009) https://doi.org/10.1063/1.3140540

Abstract

View articletitled, Noise‐assisted quantization in sensor networks

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Impurity Dispersion and Low‐Frequency Noise in Nanoscale MOS Transistors

O. Marinov; M. J. Deen

AIP Conf. Proc. 1129, 273–276 (2009) https://doi.org/10.1063/1.3140449

Abstract

View articletitled, Impurity Dispersion and Low‐Frequency Noise in Nanoscale MOS Transistors

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Low Frequency Noise In Electrolyte‐Gate Field‐Effect Devices Functionalized With Dendrimer/Carbon‐Nanotube Multilayers

F. V. Gasparyan; A. Poghossian; S. A. Vitusevich; M. V. Petrychuk; V. A. Sydoruk; A. V. Surmalyan; J. R. Siqueira; O. N. Oliveira; A. Offenhäusser; M. J. Schöning

AIP Conf. Proc. 1129, 133–136 (2009) https://doi.org/10.1063/1.3140412

Abstract

View articletitled, Low Frequency Noise In Electrolyte‐Gate Field‐Effect Devices Functionalized With Dendrimer/Carbon‐Nanotube Multilayers

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1/f Performance Limits of Scanning Tunneling Microscopes

Amanda M. Truong; Peter H. Handel

AIP Conf. Proc. 1129, 69–72 (2009) https://doi.org/10.1063/1.3140561

Abstract

View articletitled, 1/f Performance Limits of Scanning Tunneling Microscopes

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Flickering Noise Spectroscopy as a Powerful Tool for Investigation the Dynamics of the Deformation Processes in Solids

Sergey G. Lakeev; Nina N. Peschanskaya; Vitalii V. Shpeiizman; Pavel N. Yakushev; Alexander S. Shvedov; Alexander S. Smolyanskii

AIP Conf. Proc. 1129, 149–152 (2009) https://doi.org/10.1063/1.3140417

Abstract

View articletitled, Flickering Noise Spectroscopy as a Powerful Tool for Investigation the Dynamics of the Deformation Processes in Solids

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Ultra‐low conductivity noise in metallic nanowires

Amrita Singh; Arindam Ghosh

AIP Conf. Proc. 1129, 97–100 (2009) https://doi.org/10.1063/1.3140567

Abstract

View articletitled, Ultra‐low conductivity noise in metallic nanowires

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Low Frequency Noise Degradation in 45 nm High‐k nMOSFETs due to Hot Carrier and Constant Voltage Stress

M. Shahriar Rahman; Zeynep Çelik‐Butler; M. A. Quevedo‐Lopez; Ajit Shanware; Luigi Colombo

AIP Conf. Proc. 1129, 263–266 (2009) https://doi.org/10.1063/1.3140447

Abstract

View articletitled, Low Frequency Noise Degradation in 45 nm High‐k nMOSFETs due to Hot Carrier and Constant Voltage Stress

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1/f Resistance Fluctuation In Carbon Nanotubes

Hideo Akabane; Norihito Miwa

AIP Conf. Proc. 1129, 483–486 (2009) https://doi.org/10.1063/1.3140506

Abstract

View articletitled, 1/f Resistance Fluctuation In Carbon Nanotubes

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Spatial Distribution Of Noise Sources In Thick‐Film Resistors

A. Kolek; A. W. Stadler; Z. Zawiślak

AIP Conf. Proc. 1129, 157–160 (2009) https://doi.org/10.1063/1.3140419

Abstract

View articletitled, Spatial Distribution Of Noise Sources In Thick‐Film Resistors

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Numerical modeling of low frequency noise in ultrathin oxide MOSFETs

F. Martinez; J. Armand; M. Valenza

AIP Conf. Proc. 1129, 285–290 (2009) https://doi.org/10.1063/1.3140452

Abstract

View articletitled, Numerical modeling of low frequency noise in ultrathin oxide MOSFETs

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The Low‐frequency Noise in Al Doped ZnO Films

Béla Szentpáli; Ágoston Németh; Zoltán Lábadi; György Kovács

AIP Conf. Proc. 1129, 129–132 (2009) https://doi.org/10.1063/1.3140411

Abstract

View articletitled, The Low‐frequency Noise in Al Doped ZnO Films

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The Study of the Discrete Quasi‐Multifractal Process

A. Saichev; V. Filimonov

AIP Conf. Proc. 1129, 515–518 (2009) https://doi.org/10.1063/1.3140524

Abstract

View articletitled, The Study of the Discrete Quasi‐Multifractal Process

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Modeling and Measurements of Low Frequency Noise in Single‐Walled Carbon Nanotube Films with Bulk and Percolation Configurations

Ashkan Behnam; Ant Ural; Gijs Bosman

AIP Conf. Proc. 1129, 79–84 (2009) https://doi.org/10.1063/1.3140563

Abstract

View articletitled, Modeling and Measurements of Low Frequency Noise in Single‐Walled Carbon Nanotube Films with Bulk and Percolation Configurations

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Intrinsic Noise Sources in a Schottky Barrier MOSFET: a Monte Carlo Analysis

Elena Pascual Corral; Raúl Rengel; María J. Martín

AIP Conf. Proc. 1129, 329–332 (2009) https://doi.org/10.1063/1.3140465

Abstract

View articletitled, Intrinsic Noise Sources in a Schottky Barrier MOSFET: a Monte Carlo Analysis

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Applications of dynamical inference to the analysis of noisy biological time series with hidden dynamical variables

A. Duggento; D. G. Luchinsky; V. N. Smelyanskiy; M. Millonas; P. V. E. McClintock

AIP Conf. Proc. 1129, 531–534 (2009) https://doi.org/10.1063/1.3140527

Abstract

View articletitled, Applications of dynamical inference to the analysis of noisy biological time series with hidden dynamical variables

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Characterizing electron entanglement in multi‐mode mesoscopic conductors

Fabio Taddei; Vittorio Giovannetti; Diego Frustaglia; Rosario Fazio

AIP Conf. Proc. 1129, 475–478 (2009) https://doi.org/10.1063/1.3140503

Abstract

View articletitled, Characterizing electron entanglement in multi‐mode mesoscopic conductors

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Study Of Radiation Spectrum Emitted From Local Regions In PN Junctions

Ondrej Krcal; Pavel Koktavy; Tomas Trcka

AIP Conf. Proc. 1129, 403–405 (2009) https://doi.org/10.1063/1.3140485

Abstract

View articletitled, Study Of Radiation Spectrum Emitted From Local Regions In PN Junctions

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Negative excess noise in gated quantum wires

F. Dolcini; B. Trauzettel; I. Safi; H. Grabert

AIP Conf. Proc. 1129, 439–442 (2009) https://doi.org/10.1063/1.3140494

Abstract

View articletitled, Negative excess noise in gated quantum wires

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Equivalent Noise Input Photon of MWIR Hg Cd Te Avalanche Photodiodes used in a focal plane array

B. Orsal; J. Foltz; J. Kayaian; J. Arnoult

AIP Conf. Proc. 1129, 371–374 (2009) https://doi.org/10.1063/1.3140476

Abstract

View articletitled, Equivalent Noise Input Photon of MWIR Hg Cd Te Avalanche Photodiodes used in a focal plane array

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Broadband Noise of Driven Vortices at the Mode‐Locking Resonance

S. Okuma; J. Inoue; N. Kokubo

AIP Conf. Proc. 1129, 117–120 (2009) https://doi.org/10.1063/1.3140408

Abstract

View articletitled, Broadband Noise of Driven Vortices at the Mode‐Locking Resonance

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Low‐Frequency Noise of Strained and Non‐Strained n‐Channel Tri‐Gate FinFETs With Different Gate Dielectrics

N. Lukyanchikova; N. Garbar; V. Kudina; A. Smolanka; E. Simoen; C. Claeys

AIP Conf. Proc. 1129, 291–294 (2009) https://doi.org/10.1063/1.3140453

Abstract

View articletitled, Low‐Frequency Noise of Strained and Non‐Strained n‐Channel Tri‐Gate FinFETs With Different Gate Dielectrics

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Defect Noise Spectroscopy Results for GaN Nanowires

Erdem Cicek; Jason L. Johnson; Ant Ural; Gijs Bosman

AIP Conf. Proc. 1129, 101–104 (2009) https://doi.org/10.1063/1.3140404

Abstract

View articletitled, Defect Noise Spectroscopy Results for GaN Nanowires

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Low‐frequency Noise Characterizations of GaN‐based LEDs With Different Growth Parameters

W. K. Fone; K. K. Leung; C. Surya

AIP Conf. Proc. 1129, 633–636 (2009) https://doi.org/10.1063/1.3140554

Abstract

View articletitled, Low‐frequency Noise Characterizations of GaN‐based LEDs With Different Growth Parameters

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Suppression of 1/f Noise in Accumulation Mode FD‐SOI MOSFETs on Si(100) and (110) Surfaces

W. Cheng; C. Tye; P. Gaubert; A. Teramoto; S. Sugawa; T. Ohmi

AIP Conf. Proc. 1129, 337–340 (2009) https://doi.org/10.1063/1.3140467

Abstract

View articletitled, Suppression of 1/f Noise in Accumulation Mode FD‐SOI MOSFETs on Si(100) and (110) Surfaces

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Charge Fluctuations and Boundary Conditions of Biological Ion Channels: Effect on the Ionic Transition Rate

R. Tindjong; D. G. Luchinsky; P. V. E. McClintock; I. Kaufman; R. S. Eisenberg

AIP Conf. Proc. 1129, 535–538 (2009) https://doi.org/10.1063/1.3140528

Abstract

View articletitled, Charge Fluctuations and Boundary Conditions of Biological Ion Channels: Effect on the Ionic Transition Rate

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The Impact of Collisional Broadening on Noise in Silicon at Equilibrium

Christoph Jungemann; Mihail Nedjalkov

AIP Conf. Proc. 1129, 73–76 (2009) https://doi.org/10.1063/1.3140562

Abstract

View articletitled, The Impact of Collisional Broadening on Noise in Silicon at Equilibrium

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Noise and Interface Density of Traps in 4 H‐SiC MOSFETs

S. L. Rumyantsev; M. E. Levinshtein; P. A. Ivanov; M. S. Shur; J. W. Palmour; A. K. Agarwal; B. A. Hull; S. H. Ryu

AIP Conf. Proc. 1129, 341–344 (2009) https://doi.org/10.1063/1.3140469

Abstract

View articletitled, Noise and Interface Density of Traps in 4 H‐SiC MOSFETs

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Micro‐plasma Luminescence And Signal Noise Used To Solar Cells Defects Diagnostic

Vanek Jiri; Koktavy Pavel; Dolensky Jan; Vesely Ales; Chobola Zdenek; Paracka Petr

AIP Conf. Proc. 1129, 641–644 (2009) https://doi.org/10.1063/1.3140556

Abstract

View articletitled, Micro‐plasma Luminescence And Signal Noise Used To Solar Cells Defects Diagnostic

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Human Sleep EEG Stochastic Artefact Analysis

Petr Sadovsky; Robert Macku

AIP Conf. Proc. 1129, 549–552 (2009) https://doi.org/10.1063/1.3140532

Abstract

View articletitled, Human Sleep EEG Stochastic Artefact Analysis

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Poor qubits make for rich physics: noise‐induced quantum Zeno effects, and noise‐induced Berry phases

Robert S. Whitney

AIP Conf. Proc. 1129, 469–474 (2009) https://doi.org/10.1063/1.3140502

Abstract

View articletitled, Poor qubits make for rich physics: noise‐induced quantum Zeno effects, and noise‐induced Berry phases

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Correlation‐Fluctuation Effects In Non‐Equilibrium Quantum Gas

R. Katilius; S. V. Gantsevich; V. D. Kagan; M. I. Muradov; M. Ramonas; M. Rudan

AIP Conf. Proc. 1129, 9–12 (2009) https://doi.org/10.1063/1.3140568

Abstract

View articletitled, Correlation‐Fluctuation Effects In Non‐Equilibrium Quantum Gas

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Low‐Frequency Noise Measurements of the Tunneling Current in Single Barrier GaAs/AlAs/GaAs Devices

Jacek Przybytek; Michał Baj

AIP Conf. Proc. 1129, 333–336 (2009) https://doi.org/10.1063/1.3140466

Abstract

View articletitled, Low‐Frequency Noise Measurements of the Tunneling Current in Single Barrier GaAs/AlAs/GaAs Devices

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Cancer growth dynamics: stochastic models and noise induced effects

B. Spagnolo; A. Fiasconaro; N. Pizzolato; D. Valenti; D. Persano Adorno; P. Caldara; A. Ochab‐Marcinek; E. Gudowska‐Nowak

AIP Conf. Proc. 1129, 539–544 (2009) https://doi.org/10.1063/1.3140529

Abstract

View articletitled, Cancer growth dynamics: stochastic models and noise induced effects

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Formulation of Time‐Resolved Counting Statistics Based on a Positive‐Operator‐Valued Measure

Wolfgang Belzig; Adam Bednorz

AIP Conf. Proc. 1129, 457–460 (2009) https://doi.org/10.1063/1.3140498

Abstract

View articletitled, Formulation of Time‐Resolved Counting Statistics Based on a Positive‐Operator‐Valued Measure

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Modeling scaled processes and clustering of events by the nonlinear stochastic differential equations

B. Kaulakys; M. Alaburda; V. Gontis

AIP Conf. Proc. 1129, 13–16 (2009) https://doi.org/10.1063/1.3140414

Abstract

View articletitled, Modeling scaled processes and clustering of events by the nonlinear stochastic differential equations

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Low‐Frequency Noise in a $0.18 μ m$ Mixed‐Mode CMOS Technology at Low Temperature

P. Martin; M. Cavelier; G. Ghibaudo

AIP Conf. Proc. 1129, 317–320 (2009) https://doi.org/10.1063/1.3140462

Abstract

View articletitled, Low‐Frequency Noise in a <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">0.18 μ</mtext><mi mathvariant="normal" xmlns="">m</mi></math> Mixed‐Mode CMOS Technology at Low Temperature

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Experimental Analysis of Noise in CdTe Radiation Detectors

A. Andreev; L. Grmela; M. Raska; J. Sikula; P. Moravec

AIP Conf. Proc. 1129, 313–316 (2009) https://doi.org/10.1063/1.3140461

Abstract

View articletitled, Experimental Analysis of Noise in CdTe Radiation Detectors

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Low Frequency Noise in High Speed SiGe:C HBTs after Forward and Mixed‐Mode Stress

Malick Diop; Cedric Leyris; Nathalie Revil; Mathieu Marin; Gérard Ghibaudo

AIP Conf. Proc. 1129, 629–632 (2009) https://doi.org/10.1063/1.3140553

Abstract

View articletitled, Low Frequency Noise in High Speed SiGe:C HBTs after Forward and Mixed‐Mode Stress

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Low Frequency Noise Performance of Advanced Si and Ge CMOS Technologies

C. Claeys; A. Mercha; E. Simoen

AIP Conf. Proc. 1129, 209–214 (2009) https://doi.org/10.1063/1.3140432

Abstract

View articletitled, Low Frequency Noise Performance of Advanced Si and Ge CMOS Technologies

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Investigation of Noise Performance of SiGe HBTs by Deterministic Simulation of Boltzmann Equation in Two‐Dimensional Real Space

Sung‐Min Hong; Christoph Jungemann

AIP Conf. Proc. 1129, 573–576 (2009) https://doi.org/10.1063/1.3140538

Abstract

View articletitled, Investigation of Noise Performance of SiGe HBTs by Deterministic Simulation of Boltzmann Equation in Two‐Dimensional Real Space

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Mathematical Background of $1/f$ Fluctuations

Toshimitsu Musha

AIP Conf. Proc. 1129, 37–40 (2009) https://doi.org/10.1063/1.3140479

Abstract

View articletitled, Mathematical Background of <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1/f</mtext></math> Fluctuations

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The More Rehearsal, the More Noise in Timing Patterns

Miki Goan; Takugo Fukaya; Katsuyoshi Tsujita

AIP Conf. Proc. 1129, 559–562 (2009) https://doi.org/10.1063/1.3140535

Abstract

View articletitled, The More Rehearsal, the More Noise in Timing Patterns

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Stability under influence of noise with regulated periodicity

O. A. Chichigina; B. Spagnolo; D. Valenti; A. A. Dubkov

AIP Conf. Proc. 1129, 61–64 (2009) https://doi.org/10.1063/1.3140550

Abstract

View articletitled, Stability under influence of noise with regulated periodicity

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Dynamics Of Interaction Of Quantum System With Stochastic Fields

E. A. Sobakinskaya; A. L. Pankratov; V. L. Vaks

AIP Conf. Proc. 1129, 53–56 (2009) https://doi.org/10.1063/1.3140530

Abstract

View articletitled, Dynamics Of Interaction Of Quantum System With Stochastic Fields

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Modified two‐state approximation for classical stochastic resonance

A. A. Dubkov

AIP Conf. Proc. 1129, 45–48 (2009) https://doi.org/10.1063/1.3140499

Abstract

View articletitled, Modified two‐state approximation for classical stochastic resonance

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Universal oscillations of high‐order cumulants

Christian Flindt; Christian Fricke; Frank Hohls; Tomáš Novotný; Karel Netočný; Tobias Brandes; Rolf J. Haug

AIP Conf. Proc. 1129, 453–456 (2009) https://doi.org/10.1063/1.3140497

Abstract

View articletitled, Universal oscillations of high‐order cumulants

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Resonance with Temporal Stochasticity and Non‐locality

Toru Ohira

AIP Conf. Proc. 1129, 49–52 (2009) https://doi.org/10.1063/1.3140515

Abstract

View articletitled, Resonance with Temporal Stochasticity and Non‐locality

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Spectral analysis of electromagnetic and acoustic emission stochastic signals

Tomas Trcka; Pavel Koktavy; Bohumil Koktavy

AIP Conf. Proc. 1129, 655–658 (2009) https://doi.org/10.1063/1.3140559

Abstract

View articletitled, Spectral analysis of electromagnetic and acoustic emission stochastic signals

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Stochastic Dynamics of Road‐Vehicle Systems and Related Bifurcation Problems

Walter V. Wedig

AIP Conf. Proc. 1129, 33–36 (2009) https://doi.org/10.1063/1.3140468

Abstract

View articletitled, Stochastic Dynamics of Road‐Vehicle Systems and Related Bifurcation Problems

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The Ring of Brownian Motion: the good, the bad and the simply silly

Peter Hänggi

AIP Conf. Proc. 1129, 3–5 (2009) https://doi.org/10.1063/1.3140484

Abstract

View articletitled, The Ring of Brownian Motion: the good, the bad and the simply silly

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Fluctuation Theorems in Biological Physics

Alexander M. Berezhkovskii; Sergey M. Bezrukov

AIP Conf. Proc. 1129, 525–530 (2009) https://doi.org/10.1063/1.3140526

Abstract

View articletitled, Fluctuation Theorems in Biological Physics

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