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Volume 1066, Issue 1
3 November 2008
AIP Conference Proceedings Cover Image for Volume 1066, Issue 1
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Front Matter for Volume 1066
AIP Conf. Proc. 1066, frontmatter (2008) https://doi.org/10.1063/v1066.frontmatter
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Back Matter for Volume 1066
AIP Conf. Proc. 1066, backmatter (2008) https://doi.org/10.1063/v1066.backmatter
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Advanced Middle‐High Energy Range Medium Current Implanter EXCEED9600A
Takashi Nogami; Masayoshi Hino; Tomoaki Kobayashi; Hideki Fujita; Takao Matsumoto
AIP Conf. Proc. 1066, 308–311 (2008) https://doi.org/10.1063/1.3033620
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Introduction of the MC3‐II/WR System, an Extended Energy Medium Current Ion Implanter
Michiro Sugitani; Fumiaki Sato; Masazumi Koike; Makoto Sano; Kazuyoshi Ueno
AIP Conf. Proc. 1066, 269–272 (2008) https://doi.org/10.1063/1.3033610
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Correlation of Measured Surface Contaminants as a Function of Ion Beam Current in GSD Ion Implanters
Ron Johnson; Ron Eddy; John Schuur
AIP Conf. Proc. 1066, 198–201 (2008) https://doi.org/10.1063/1.3033591
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Dose Rate Effects: the Impact of Beam Dynamics on Materials Issues and Device Performance
M. S. Ameen; M. A. Harris; C. Huynh; R. N. Reece
AIP Conf. Proc. 1066, 30–33 (2008) https://doi.org/10.1063/1.3033621
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The Role of Implanter Parameters on Implant Damage Generation: an Atomistic Simulation Study
J. Singer; M. Jaraíz; P. Castrillo; C. Laviron; N. Cagnat; F. Wacquant; O. Cueto; A. Poncet
AIP Conf. Proc. 1066, 209–212 (2008) https://doi.org/10.1063/1.3033594
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Integration of an Axcelis Optima HD Single Wafer High Current Implanter for p‐ and n‐S/D Implants in an Existing Batch Implanter Production Line
Matthias Schmeide; Serguei Kontratenko; Ralf Peter Müller; Bernhard Krimbacher
AIP Conf. Proc. 1066, 332–334 (2008) https://doi.org/10.1063/1.3033627
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Threshold Voltage Engineering by Lanthanide Doping of the MOS Gate Stack
A. Fet; V. Häublein; H. Ryssel
AIP Conf. Proc. 1066, 501–504 (2008) https://doi.org/10.1063/1.3033672
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Summary of Industry‐Academia Collaboration Projects on Cluster Ion Beam Process Technology
Isao Yamada; Jiro Matsuo; Noriaki Toyoda
AIP Conf. Proc. 1066, 415–418 (2008) https://doi.org/10.1063/1.3033651
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Introduction of the SHX‐III System, a Single‐Wafer High‐Current Ion Implanter
Michiro Sugitani; Mitsukuni Tsukihara; Mitsuaki Kabasawa; Koji Ishikawa; Hiroki Murooka; Kazuyoshi Ueno
AIP Conf. Proc. 1066, 292–295 (2008) https://doi.org/10.1063/1.3033616
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B18H22 Implantation for the Source‐Drain Extension in 45 nm‐node PMOSFETs and Beyond
Y. Kawasaki; S. Endo; M. Kitazawa; Y. Maruyama; T. Yamashita; T. Kuroi; H. Yoshimura; M. Kojima
AIP Conf. Proc. 1066, 391–394 (2008) https://doi.org/10.1063/1.3033644
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Next Generation Angle Control for Medium Current and High Energy Implanters
Joseph C. Olson; Atul Gupta; Hans‐Joachim L. Gossmann; Dennis Rodier
AIP Conf. Proc. 1066, 324–327 (2008) https://doi.org/10.1063/1.3033625
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Ultra‐Shallow P+/N Junction Formation in Si Using Low Temperature Solid Phase Epitaxy Assisted with Laser Activation
Shuhei Hara; Yuki Tanaka; Takumi Fukaya; Satoru Matsumoto; Toshiharu Suzuki; Genshu Fuse; Toshio Kudo; Susumu Sakuragi
AIP Conf. Proc. 1066, 79–82 (2008) https://doi.org/10.1063/1.3033688
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Defect Engineering for Ultra‐Shallow Junctions Using Surfaces
E. G. Seebauer; C. T. M. Kwok; R. Vaidyanathan; Y. V. Kondratenko; S. H. Yeong; M. P. Srinivasan; Benjamin Colombeau; Lap Chan
AIP Conf. Proc. 1066, 34–37 (2008) https://doi.org/10.1063/1.3033632
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Pure Material Vapor Source by Induction Heating Evaporator for an Electron Cyclotron Resonance Ion Source
Y. Matsui; T. Watanabe; T. Satani; M. Muramatsu; K. Tanaka; A. Kitagawa; Y. Yoshida; F. Sato; Y. Kato; T. Iida
AIP Conf. Proc. 1066, 529–532 (2008) https://doi.org/10.1063/1.3033679
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Boron Profile Sharpening in Ultra‐Shallow p+‐n Junction Produced by Plasma Immersion Ion Implantation from BF3 Plasma
V. Lukichev; K. Rudenko; A. Orlikovsky; A. Pustovit; A. Vyatkin
AIP Conf. Proc. 1066, 481–483 (2008) https://doi.org/10.1063/1.3033668
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Optically Stimulated Diffusion in Ultra‐Shallow Junction Formation
Y. Kondratenko; C. T. M. Kwok; R. Vaidyanathan; E. G. Seebauer
AIP Conf. Proc. 1066, 228–231 (2008) https://doi.org/10.1063/1.3033599
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Benefits of Zero Degree Single Wafer High Energy Implants for Advanced Semiconductor Device Fabrication
Woojin Lee; Thirumal Thanigaivelan; Hans‐Joachim Gossmann; Russell Low; Benjamin Colombeau; Kerry Lacey; Mark Merrill; Anthony Renau
AIP Conf. Proc. 1066, 261–264 (2008) https://doi.org/10.1063/1.3033608
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Implant Angle Monitor System of MC3‐II
Fumiaki Sato; Makoto Sano; Hiroaki Nakaoka; Yoshito Fujii; Tetuya Kudo; Makoto Nakanishi; Masazumi Koike; Yasushi Fujino
AIP Conf. Proc. 1066, 300–303 (2008) https://doi.org/10.1063/1.3033618
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Layer Transfer with Implant‐Induced Defects: a Path to Advanced Engineered Substrates
Konstantin K. Bourdelle
AIP Conf. Proc. 1066, 285–291 (2008) https://doi.org/10.1063/1.3033615
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Ion Beam Control and Transistor Characteristics for 45 nm Source‐Drain Extension Formation
K. Okabe; M. Nishikawa; K. Ikeda; H. Kurata; T. Mori; S. Satoh; M. Kase
AIP Conf. Proc. 1066, 26–29 (2008) https://doi.org/10.1063/1.3033611
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Threshold Voltage Mismatch Resulting from Mechanical Vibration
Janet M. Towner
AIP Conf. Proc. 1066, 101–104 (2008) https://doi.org/10.1063/1.3033565
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A Study of Implanted BF2 as a Function of Wafer Temperature During Implant
Tae‐Hoon Huh; Byung‐Jae Kang; Geum‐Joo Ra; Kyung‐Won Lee; Steve Kim; Ronald N. Reece; Leonard M. Rubin; Michael S. Ameen; Won‐Min Moon; Min‐Sung Lee; Young‐Ho Lee; Jong‐Oh Lee; Dong‐Chul Park; Jung‐Youn Lim; Youn‐Soo Kim; Jae‐Sang Ro
AIP Conf. Proc. 1066, 87–90 (2008) https://doi.org/10.1063/1.3033690
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Quantitative Evaluation of Ion‐implanted Arsenic in Silicon by Instrumental Neutron Activation Analysis
Toshiko Takatsuka; Kouichi Hirata; Yoshinori Kobayashi; Takayoshi Kuroiwa; Tsutomu Miura; Hideaki Matsue
AIP Conf. Proc. 1066, 194–197 (2008) https://doi.org/10.1063/1.3033590
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An Extensive Study on the Boron Junctions Formed by Optimized Pre‐Spike/Multiple‐Pulse Flash Lamp Annealing Schemes: Junction Formation, Stability and Leakage
S. H. Yeong; D. X. M. Tan; B. Colombeau; C. H. Poon; K. R. C. Mok; A. See; F. Benistant; K. L. Pey; C. M. Ng; L. Chan; M. P. Srinivasan
AIP Conf. Proc. 1066, 47–50 (2008) https://doi.org/10.1063/1.3033667
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PULSION®: A Versatile 200 to 300 mm Bridge Tool Plasma Immersion Ion Implanter for Ultra‐Shallow Doping and Nanotechology Applications.
Frank Torregrosa; Hasnaa Etienne; Guillaume Sempere; Gilles Mathieu; Laurent Roux; Frédéric Milesi; Frédéric Gonzatti
AIP Conf. Proc. 1066, 484–487 (2008) https://doi.org/10.1063/1.3033669
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High‐Resolution Mapping of Low‐Dose Implants
Jeffri Halim; Akira Mineji; Vladimir Faifer; Michael Current
AIP Conf. Proc. 1066, 175–178 (2008) https://doi.org/10.1063/1.3033585
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The Reduction of TED in Ion Implanted Silicon
Amitabh Jain
AIP Conf. Proc. 1066, 19–21 (2008) https://doi.org/10.1063/1.3033592
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Non‐Uniform Dose Mapping Controlled by Modulated Vertical and Horizontal Scans
S. Ninomiya; Y. Kimura; T. Kudo; A. Ochi; R. Toda; M. Tsukihara; F. Sato; G. Fuse; K. Ueno; M. Sugitani
AIP Conf. Proc. 1066, 163–166 (2008) https://doi.org/10.1063/1.3033582
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Approaches to USJ Formation Beyond Molecular Implantation
C. Hatem; A. Renau; L. Godet; A. Kontos; G. Papasouliotis; J. England; E. Arevalo
AIP Conf. Proc. 1066, 399–402 (2008) https://doi.org/10.1063/1.3033646
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Micro Four‐Point Probe with High Spatial Resolution for Ion Implantation and Ultra‐Shallow Junction Characterization
Daniel Kjaer; Rong Lin; Dirch Hjorth Petersen; Petros M. Kopalidis; Ronald Eddy; David A. Walker; William F. Egelhoff; Larry Pickert
AIP Conf. Proc. 1066, 167–170 (2008) https://doi.org/10.1063/1.3033583
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Performance Enhancement of PFET Planar Devices by Plasma Immersion Ion Implantation (P3I)
Claude Ortolland; Naoto Horiguchi; Christoph Kerner; Thomas Chiarella; Pierre Eyben; Jean‐Luc Everaert; Jose Ignacio del Agua Borniquel; Tze Poon; Kartik Santhanam; Peter Porshnev; Majeed Foad; Robert Schreutelkamp; Philippe Absil; Wilfried Vandervorst; Susan Felch; Thomas Hoffmann
AIP Conf. Proc. 1066, 465–468 (2008) https://doi.org/10.1063/1.3033663
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New Approaches for Characterization of Advanced Annealing Techniques for Ultra‐Shallow Junction Formation
Paul Timans; Yao Zhi Hu; Jeff Gelpey; Steve McCoy; Wilfried Lerch; Silke Paul; Detlef Bolze; Hamid Kheyrandish
AIP Conf. Proc. 1066, 67–70 (2008) https://doi.org/10.1063/1.3033685
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Ultra‐Shallow Junctions Fabrication by Plasma Immersion Implantation on PULSION® Followed by Laser Thermal Processing
Frank Torregrosa; Hasnaa Etienne; Guillaume Sempere; Gilles Mathieu; Laurent Roux; Vanessa Vervisch; Philippe Delaporte; Thierry Sarnet; Aron Pap; Krisztián Kis‐Szabo; Tibor Pavelka; Catherine Grosjean
AIP Conf. Proc. 1066, 473–476 (2008) https://doi.org/10.1063/1.3033665
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The Development and Evolution of Ion Implanters in the Semiconductor Industry
Dave G. Armour
AIP Conf. Proc. 1066, 3–10 (2008) https://doi.org/10.1063/1.3033647
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Development of Electron Cyclotron Resonance Ion Source for Synthesis of Endohedral Metallofullerenes
K. Tanaka; M. Muramatsu; T. Uchida; S. Biri; T. Asaji; K. Shima; T. Hanajiri; A. Kitagawa; Y. Kato; Y. Yoshida
AIP Conf. Proc. 1066, 525–528 (2008) https://doi.org/10.1063/1.3033678
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Implant Angle Repeatability on Optima MD
Robert Rathmell; Jonathan David; Mark Harris
AIP Conf. Proc. 1066, 148–151 (2008) https://doi.org/10.1063/1.3033578
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Reliability Tests of a Real Time Charge Monitor (RTCM)
G. Gammel; C. Biloiu; A. Perel; J. T. Scheuer; A. Renau
AIP Conf. Proc. 1066, 125–128 (2008) https://doi.org/10.1063/1.3033572
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EXLE‐SIMS: Dramatically Enhanced Accuracy for Dose Loss Metrology.
W. Vandervorst; R. Vos; A. J. Salima; A. Merkulov; K. Nakajima; K. Kimura
AIP Conf. Proc. 1066, 109–112 (2008) https://doi.org/10.1063/1.3033567
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Improved Beam Angle Control with SPV Metrology
K. Steeples; E. Tsidilkovski; A. Bertuch; E. Ishida; A. Agarwal
AIP Conf. Proc. 1066, 145–147 (2008) https://doi.org/10.1063/1.3033577
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Conformal Doping of FINFETs: a Fabrication and Metrology Challenge
W. Vandervorst; J. L. Everaert; E. Rosseel; M. Jurczak; T. Hoffman; P. Eyben; J. Mody; G. Zschätzsch; S. Koelling; M. Gilbert; T. Poon; J. del Agua Borniquel; M. Foad; R. Duffy; B. J. Pawlak
AIP Conf. Proc. 1066, 449–456 (2008) https://doi.org/10.1063/1.3033660
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Key Technologies for Ultra High Dose CMOS Applications
Y. Jeon; I. Koo; J. Oh; S. B. Lee; J. Butterbaugh; S. Jin; J. Lee; K. Rouh; M. Ju; S. Jeon; J. Ku; S. W. Lee; M. T. Ok; A. Lee; K. Kim; S. W. Lee; K. J. Ju; J. W. Park; V. Singh
AIP Conf. Proc. 1066, 133–136 (2008) https://doi.org/10.1063/1.3033574
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Production of Liquid Cluster Ions by Nozzle Beam Source with and without He Gas
G. H. Takaoka; H. Ryuto; T. Okada; K. Sugiyama
AIP Conf. Proc. 1066, 419–422 (2008) https://doi.org/10.1063/1.3033652
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Fabrication of Ultra‐Shallow Junctions on 300 mm Wafers Using the Plasma Immersion Implanter PULSION® Followed by Spike Annealing Using LEVITOR Furnace
Frank Torregrosa; Hasnaa Etienne; Guillaume Sempere; Gilles Mathieu; Laurent Roux; Frederic Milesi; Frederic Gonzatti; Xavier Pages
AIP Conf. Proc. 1066, 477–480 (2008) https://doi.org/10.1063/1.3033666
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The Effect of the Dose and Energy of a Pre‐Silicide Implant on Nickel Silicide Formation
Jeffrey H. Rice
AIP Conf. Proc. 1066, 517–520 (2008) https://doi.org/10.1063/1.3033675
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Comparison of B, BF2 & B18H22 for Extension and BF2, B18H22 & In HALO Implantation for 32 nm Node Using Various Diffusion‐less Annealing Techniques
John Borland; Hiroki Kiyama
AIP Conf. Proc. 1066, 63–66 (2008) https://doi.org/10.1063/1.3033684
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Beam Uniformity Controllable Ion Source with a Long Slit
T. Ikejiri; W. Zhao; K. Tanaka; T. Igo; T. Kinoyama; S. Tamura; T. Yamashita
AIP Conf. Proc. 1066, 320–323 (2008) https://doi.org/10.1063/1.3033624
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Evaluation of Laser Scattering Technique and Spectroscopic Ellipsometry for In‐Line Ion Implantation Characterization
F. Milesi; E. Nolot; Z. Mehrez; F. Mazen; S. Favier
AIP Conf. Proc. 1066, 182–185 (2008) https://doi.org/10.1063/1.3033587
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Dopant Activation and Defect Analysis of Ultra‐Shallow Junctions Made by Gas Cluster Ion Beams
Yan Shao; John Hautala; Larry Larson; Amitabh Jain
AIP Conf. Proc. 1066, 411–414 (2008) https://doi.org/10.1063/1.3033650
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Infusion Doping for Sub‐45 nm CMOS Technology Nodes
Pankaj Kalra; Prashant Majhi; Hsing‐Huang Tseng; Raj Jammy; Tsu‐Jae King Liu
AIP Conf. Proc. 1066, 407–410 (2008) https://doi.org/10.1063/1.3033649
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Ion Implanted Left‐Handed Tunable Metamaterial for Microwave Circuit Applications
H. Yang; A. Kafaratzis; Z. Hu; N. Peng; R. Gwilliam
AIP Conf. Proc. 1066, 248–250 (2008) https://doi.org/10.1063/1.3033605
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Tungsten Transport in an Ion Source
O. Byl; S. Yedave; S. Sergi; J. Sweeney; S. Bishop; R. Kaim; D. Eldridge
AIP Conf. Proc. 1066, 356–359 (2008) https://doi.org/10.1063/1.3033635
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Nissin’s New Cluster Implanter: CLARIS
S. Umisedo; N. Hamamoto; Y. Koga; H. Une; N. Maehara; T. Nagayama; M. Tanjyo; N. Nagai; T. N. Horsky; R. D. Goldberg; S. K. Hahto; D. G. Bilbrough; D. C. Jacobson; H. F. Glavish
AIP Conf. Proc. 1066, 296–299 (2008) https://doi.org/10.1063/1.3033617
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Simulation of Mass Interferences Considering Charge Exchange Events and Dissociation of Molecular Ions During Extraction
Volker Häublein; Lothar Frey; Heiner Ryssel
AIP Conf. Proc. 1066, 159–162 (2008) https://doi.org/10.1063/1.3033581
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Characteristics of Cluster Implantation and Low Diffusion Annealing
Tsutomu Nagayama; Nariaki Hamamoto; Sei Umisedo; Masayasu Tanjyo; Fumio Ootsuka; Takayuki Aoyama
AIP Conf. Proc. 1066, 434–437 (2008) https://doi.org/10.1063/1.3033657
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Radiation Issues Surrounding Very High Energy Ion Implantation
Nicholas R. White; Nobuhiro Tokoro; Edward Bell
AIP Conf. Proc. 1066, 277–280 (2008) https://doi.org/10.1063/1.3033613
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High Productivity Implantation “PARTIAL IMPLANT”
Masayoshi Hino; Naoki Miyamoto; Shigeki Sakai; Takao Matsumoto
AIP Conf. Proc. 1066, 312–315 (2008) https://doi.org/10.1063/1.3033622
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Development of Compact Electron Cyclotron Resonance Ion Source with Permanent Magnets for High‐Energy Carbon‐Ion Therapy
M. Muramatsu; A. Kitagawa; Y. Iwata; S. Hojo; Y. Sakamoto; S. Sato; Hirotsugu Ogawa; S. Yamada; Hiroyuki Ogawa; Y. Yoshida; T. Ueda; H. Miyazaki; A. G. Drentje
AIP Conf. Proc. 1066, 509–516 (2008) https://doi.org/10.1063/1.3033674
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Ultra‐Shallow Junction Formation—Physics and Advanced Technology
B. Colombeau; S. H. Yeong; D. X. M. Tan; A. J. Smith; R. M. Gwilliam; C. M. Ng; K. R. C. Mok; F. Benistant; L. Chan
AIP Conf. Proc. 1066, 11–18 (2008) https://doi.org/10.1063/1.3033570
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Neutralization of Space Charge Effects for Low Energy Ion Beams Using Field Emitters
D. Nicolaescu; S. Sakai; K. Matsuda; Y. Gotoh; J. Ishikawa
AIP Conf. Proc. 1066, 265–268 (2008) https://doi.org/10.1063/1.3033609
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Photothermal Investigation of Micro‐Uniformity Problems Caused by Different Scan Systems
Hans Geiler; Klaus Brand; Hans‐Joachim Selle
AIP Conf. Proc. 1066, 171–174 (2008) https://doi.org/10.1063/1.3033584
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SIMS/ARXPS—A New Technique of Retained Dopant Dose and Profile Measurement of Low Energy Doping Processes
Shu Qin; Kent Zhuang; Shifeng Lu; Allen McTeer; Wendy Morinville; Kari Noehring
AIP Conf. Proc. 1066, 488–491 (2008) https://doi.org/10.1063/1.3033670
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Improvement of Contact Resistance with Molecular Ion Implantation
Kyung Won Lee; Jin Ku Lee; Jae Geun Oh; Tae Hoon Huh; Min Ae Ju; Seung Joon Jeon; Ja Chun Ku; Sung Ki Park; Steve Kim; Dae Ho Yoon; Geum Joo Ra; Mark A. Harris; Ronald N. Reece
AIP Conf. Proc. 1066, 505–508 (2008) https://doi.org/10.1063/1.3033673
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Automotive SOI‐BCD Technology Using Bonded Wafers
H. Himi; S. Fujino
AIP Conf. Proc. 1066, 495–500 (2008) https://doi.org/10.1063/1.3033671
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An Atomistic Model of Stressed Si Solid‐Phase Epitaxy
N. G. Rudawski; K. S. Jones; R. Gwilliam
AIP Conf. Proc. 1066, 205–208 (2008) https://doi.org/10.1063/1.3033593
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Importance of the Carbon Kick‐out Mechanism in Reducing Transient Enhanced Diffusion
Aaron Vanderpool
AIP Conf. Proc. 1066, 213–216 (2008) https://doi.org/10.1063/1.3033595
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Ion Implantation into Nanoparticulate Functional Layers
S. Walther; M. P. M. Jank; A. Ebbers; H. Ryssel
AIP Conf. Proc. 1066, 537–540 (2008) https://doi.org/10.1063/1.3033681
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Improved Re‐Crystallization of p+ Poly‐Si Gates with Molecular Ion Implantation
Jin‐Ku Lee; Min‐Ae Ju; Jae‐Geun Oh; Sun‐Hwan Hwang; Seung‐Joon Jeon; Ja‐Chun Ku; Sungki Park; Kyung‐Won Lee; Steve Kim; Geum‐Joo Ra; Ron Reece; Leonard M. Rubin; W. A. Krull; H. T. Cho
AIP Conf. Proc. 1066, 395–398 (2008) https://doi.org/10.1063/1.3033645
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Non‐Contact Wafer Fabrication Process Using Gas Cluster Ion Beams
Noriaki Toyoda; Hiromichi Isogai; Iaso Yamada
AIP Conf. Proc. 1066, 431–433 (2008) https://doi.org/10.1063/1.3033656
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Cluster Size Dependence of Etching by Reactive Gas Cluster Ion Beams
Noriaki Toyoda; Iaso Yamada
AIP Conf. Proc. 1066, 427–430 (2008) https://doi.org/10.1063/1.3033654
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Investigation of pMOS Device Matching and Characteristics Using B18H22 Implantation
Joonho Lee; Jaewoong Choi; Jungsoo An; Seonho Ryu; Kyung Won Lee; Jonghoon Kim; Geum Joo Ra; Steve Kim; H. T. Cho
AIP Conf. Proc. 1066, 438–441 (2008) https://doi.org/10.1063/1.3033658
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The Application of the Continuous Anodic Oxidation Technique for the Evaluation of State‐of‐the‐Art Front‐End Structures
S. Prussin; Shu Qin; Jason Reyes; Allen Mcteer
AIP Conf. Proc. 1066, 75–78 (2008) https://doi.org/10.1063/1.3033687
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Surface Modification of Polymer Substrates by Oxygen Ion Irradiation
G. H. Takaoka; H. Ryuto; R. Araki; T. Yakushiji
AIP Conf. Proc. 1066, 240–243 (2008) https://doi.org/10.1063/1.3033603
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Development of an Ion Beam Irradiation System for Liquid Crystal Alignment Layer Production
Takeshi Matsumoto; Yuko Kinoshita; Masahiro Tanii; Junichi Tatemichi; Masashi Konishi; Masao Naito
AIP Conf. Proc. 1066, 521–524 (2008) https://doi.org/10.1063/1.3033677
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Characterization of a Small Form Factor Multipole RGA for Process Chamber Monitoring and for Reduction in Time to Complete Routine Preventive Maintenance
Ron Johnson; Brannon Winningham; John Schuur
AIP Conf. Proc. 1066, 152–155 (2008) https://doi.org/10.1063/1.3033579
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Numerical Solution of Scattering Integral for Universal Interatomic Potential
Gholamhosain Haidari
AIP Conf. Proc. 1066, 232–235 (2008) https://doi.org/10.1063/1.3033601
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Depth Profiling of N and C in Ion Implanted ZnO and Si Using Deuterium Induced Nuclear Reaction Analysis
John Kennedy; Peter Murmu; Andreas Markwitz
AIP Conf. Proc. 1066, 541–544 (2008) https://doi.org/10.1063/1.3033682
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Ion Beam Extraction from Large Bore 11 to 13 GHz ECR Ion Source with a Pair of Cylindrically Comb‐Shaped Magnetic Fields
T. Watanabe; T. Satani; Y. Matsui; F. Sato; Y. Kato; T. Iida
AIP Conf. Proc. 1066, 533–536 (2008) https://doi.org/10.1063/1.3033680
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Dynamics of Carrier Plasma and Thermal Waves in Ion Implanted Si with Varying Pump and Probe Wavelengths
Alex Salnik; Derrick Shaughnessy
AIP Conf. Proc. 1066, 117–120 (2008) https://doi.org/10.1063/1.3033569
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Broad Ion Beam Extraction from Large Bore ECR Ion Source with Cylindrically Comb‐Shaped Magnetic Fields Configuration by Feeding Simultaneously 11 to 13 GHz and 2.45 GHz Microwaves
Y. Kato; T. Satani; Y. Matsui; T. Watanabe; M. Muramatsu; K. Tanaka; T. Asaji; A. Kitagawa; F. Sato; T. Iida
AIP Conf. Proc. 1066, 348–351 (2008) https://doi.org/10.1063/1.3033631
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Beam Angular Divergence Effects in Ion Implantation
T. N. Horsky; M. I. Current; S. K. Hahto; D. G. Bilbrough; D. C. Jacobson; W. A. Krull; R. D. Goldberg; N. Hamamoto; S. Umisedo
AIP Conf. Proc. 1066, 403–406 (2008) https://doi.org/10.1063/1.3033648
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Optima HD Imax: Molecular Implant
D. R. Tieger; P. R. Splinter; T. J. Hsieh; W. P. Reynolds
AIP Conf. Proc. 1066, 336–339 (2008) https://doi.org/10.1063/1.3033628
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How Vacancies Assist in the Formation of Antisite‐Complex Centers in 3C‐SiC during Ion Implantation
S. T. Nakagawa; A. Okamoto; M. Ohishi; H. Saito; H. Hashimoto; G. Betz
AIP Conf. Proc. 1066, 244–247 (2008) https://doi.org/10.1063/1.3033604
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Sources for Low Energy Extreme of Ion Implantation
A. Hershcovitch; V. A. Batalin; A. S. Bugaev; V. I. Gushenets; B. M. Johnson; A. A. Kolomiets; G. N. Kropachev; R. P. Kuibeda; T. V. Kulevoy; E. S. Masunov; E. M. Oks; V. I. Pershin; S. V. Petrenko; S. M. Polozov; H. J. Poole; I. Rudskoy; D. N. Seleznev; P. A. Storozhenko; A. Ya. Svarovski; G. Yu. Yushkov
AIP Conf. Proc. 1066, 328–331 (2008) https://doi.org/10.1063/1.3033626
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Optimization of Xenon Difluoride Vapor Delivery
Joseph Sweeney; Paul Marganski; Robert Kaim; Mike Wodjenski; John Gregg; Sharad Yedave; Steve Sergi; Steve Bishop; David Eldridge; Peng Zou
AIP Conf. Proc. 1066, 352–355 (2008) https://doi.org/10.1063/1.3033633
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Implanter Source Life and Stability Improvement Using In‐Situ Chemical Cleaning
Terry Romig; Doug Newman; Mike Mitchell; Kevin Ditzler; David Eldridge; Steve Bishop; James Mayer
AIP Conf. Proc. 1066, 364–367 (2008) https://doi.org/10.1063/1.3033637
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In‐Situ Ion Source Cleaning: Review of Chemical Mechanisms and Evaluation Data at Production Fabs
R. Kaim; S. Bishop; O. Byl; D. Eldridge; P. Marganski; J. Mayer; J. Sweeney; S. Yedave; D. Fuchs; S. Spreitzer; J. Vogel; J. Dunn; P. Lundquist; J. Rolland; T. Romig; D. Newman; M. Mitchell; K. Ditzler
AIP Conf. Proc. 1066, 281–284 (2008) https://doi.org/10.1063/1.3033614
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Operation and Applications of the Boron Cathodic Arc Ion Source
J. M. Williams; C. C. Klepper; D. J. Chivers; R. C. Hazelton; J. H. Freeman
AIP Conf. Proc. 1066, 469–472 (2008) https://doi.org/10.1063/1.3033664
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Angle Control on the Optima HE/XE Ion Implanter
Edward Bell; Shu Satoh
AIP Conf. Proc. 1066, 380–383 (2008) https://doi.org/10.1063/1.3033641
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Metal Ion Sources for Ion Beam Implantation
W. J. Zhao; Z. Q. Zhao; X. T. Ren
AIP Conf. Proc. 1066, 344–347 (2008) https://doi.org/10.1063/1.3033630
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Junction Photovoltage Metrology and High Resolution Mapping of Ion Implants Electrically Isolated from the Wafer Surface
Ferenc Korsós; Krisztian Kis‐Szabo; Eric Don; Aron Pap; Tibor Pavelka; Cyrille Laviron; Marcus Pfeffer
AIP Conf. Proc. 1066, 113–116 (2008) https://doi.org/10.1063/1.3033568
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A Comparative Study of Interaction of End of Range (EOR) Defect Band with Upper Buried Oxide (BOX) Interface for B and BF2 Implants in SOI and Bulk Silicon with Pre‐Amorphizing Implant.
M. Kah; A. J. Smith; J. J. Hamilton; S. H. Yeong; B. Columbeau; R. Gwilliam; R. P. Webb; K. J. Kirkby
AIP Conf. Proc. 1066, 51–54 (2008) https://doi.org/10.1063/1.3033676
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Junction Leakage Analysis of Vacancy Engineered Ultra‐Shallow p‐type Layers
A. J. Smith; L. D. Antwis; S. H. Yeong; A. P. Knights; B. Colombeau; B. J. Sealy; R. M. Gwilliam
AIP Conf. Proc. 1066, 22–25 (2008) https://doi.org/10.1063/1.3033600
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The Effect of Amorphization Conditions on the Measured Activation of Source Drain Extension Implants
Jonathan England; Alexander Kontos; Anthony Renau; Russell Gwilliam; Andrew Smith; Andrew Knights; Amitabh Jain
AIP Conf. Proc. 1066, 91–94 (2008) https://doi.org/10.1063/1.3033691
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Platinum vs. Palladium in Catalyst‐Based Hydrogen Sensors Used for Wide Temperature Range Hydrazine Leak Detection
Claudiu Muntele; Daryush Ila
AIP Conf. Proc. 1066, 251–253 (2008) https://doi.org/10.1063/1.3033606
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Photon Influence on P and B Diffusion
W. Aderhold; A. Hunter; S. B. Felch; J. Ranish
AIP Conf. Proc. 1066, 95–98 (2008) https://doi.org/10.1063/1.3033692
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Improved Rs Monitoring for Robust Process Control of High Energy Well Implants
J. H. Kim; S. Kim; G. J. Ra; K. W. Lee; R. N. Reece; S. Y. Bae
AIP Conf. Proc. 1066, 179–181 (2008) https://doi.org/10.1063/1.3033586
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Increase of Boron Ion Beam Current Extracted from a Multi‐Cusp Ion Source in an Ion Doping System with Mass Separation
Yutaka Inouchi; Shojiro Dohi; Masahiro Tanii; Junichi Tatemichi; Masashi Konishi; Masaaki Nukayama; Kazuhiro Nakao; Koichi Orihira; Masao Naito
AIP Conf. Proc. 1066, 316–319 (2008) https://doi.org/10.1063/1.3033623
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Angle Effects in High Current Ion Implantation
Joseph C. Olson; Christopher Campbell; Kyoichi Suguro; Yoshimasa Kawase; Hiroyuki Ito
AIP Conf. Proc. 1066, 129–132 (2008) https://doi.org/10.1063/1.3033573
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Emissions Monitoring and Exhaust Analysis for the Axcelis Optima HD IMAX Ion Implanter
Shaun M. Wilson; Paul Marganski; Joseph Sweeney; Steve Roberge
AIP Conf. Proc. 1066, 442–445 (2008) https://doi.org/10.1063/1.3033659
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Development of a Co‐Axial Hot Cathode for Magnetized Ion Source Plasma
N. Miyamoto; N. Hamamoto; S. Imakita; A. G. Mendenilla; M. Wada
AIP Conf. Proc. 1066, 304–307 (2008) https://doi.org/10.1063/1.3033619
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Beam Current Improvements on the Axcelis Optima HD Imax Implanter
D. R. Tieger; P. R. Splinter; T. J. Hsieh; W. P. Reynolds; R. D. Goldberg; D. C. Jacobson; E. K. McIntyre; S. K. Hahto; D. G. Bilbrough; D. Oved; T. N. Horsky
AIP Conf. Proc. 1066, 340–343 (2008) https://doi.org/10.1063/1.3033629
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Local Resistance Profiling of Ultra‐Shallow Junction with Spike Lamp and Laser Annealing Using Scanning Spreading Resistance Microscopy
Satoshi Abo; Yuji Tanaka; Kazuhisa Nishikawa; Fujio Wakaya; Toshiaki Iwamatsu; Hidekazu Oda; Mikio Takai
AIP Conf. Proc. 1066, 83–86 (2008) https://doi.org/10.1063/1.3033689
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Basic Aspects of the Formation and Activation of Boron Junctions Using Plasma Immersion Ion Implantation.
G. Zschätzsch; W. Vandervorst; T. Hoffmann; J. Goossens; J.‐L. Everaert; J. I. del Agua Borniquel; T. Poon
AIP Conf. Proc. 1066, 461–464 (2008) https://doi.org/10.1063/1.3033662
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Non‐Fluorine Plasma Strip of HDI Resist for 45 nm
A. Zakharov; V. Grimm; C. Krueger; K. Han; I. Berry; R. Sonnemans; S. Luo
AIP Conf. Proc. 1066, 42–44 (2008) https://doi.org/10.1063/1.3033655
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Investigation of Damage with Cluster Ion Beam Irradiation Using HR‐RBS
Toshio Seki; Takaaki Aoki; Jiro Matsuo
AIP Conf. Proc. 1066, 423–426 (2008) https://doi.org/10.1063/1.3033653
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The Formation of Ultra‐Shallow Phosphorous Doped Layers Using Vacancy Engineering
A. J. Smith; S. H. Yeong; B. Colombeau; B. J. Sealy; R. M. Gwilliam
AIP Conf. Proc. 1066, 38–41 (2008) https://doi.org/10.1063/1.3033643
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ClusterBoron™ Implant Alternative to BF2 PMOS SDE
Thomas Feudel; Ralf Illgen; Christian Krüger; Marek Braun; Karuppanan Sekar; David Lee; Wade Krull
AIP Conf. Proc. 1066, 387–390 (2008) https://doi.org/10.1063/1.3033642
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Boron Diffusion in Amorphous Germanium
L. A. Edelman; K. S. Jones; R. G. Elliman; L. M. Rubin
AIP Conf. Proc. 1066, 225–227 (2008) https://doi.org/10.1063/1.3033598
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Using Ion Implantation to Streamline High Volt Processing in Standard CMOS
John J. Naughton; Janet M. Towner
AIP Conf. Proc. 1066, 105–108 (2008) https://doi.org/10.1063/1.3033566
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Ion Beam Layer Separation of Cadmium Zinc Telluride
Rabi S. Bhattacharya; P. He; Y. Xu; M. Goorsky
AIP Conf. Proc. 1066, 221–224 (2008) https://doi.org/10.1063/1.3033597
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Fracture in Hydrogen‐Implanted Germanium
F. Mazen; A. Tauzin; L. Sanchez; F. Chieux; C. Deguet; E. Augendre; T. Akatsu; C. Richtarch; L. Clavelier
AIP Conf. Proc. 1066, 217–220 (2008) https://doi.org/10.1063/1.3033596
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Accurate Dose Control with Pressure Compensation System on Single‐Wafer Ion Implanters
Makoto Sano; Tatsuya Yamada; Fumiaki Sato; Mitsukuni Tsukihara; Michiro Sugitani
AIP Conf. Proc. 1066, 141–144 (2008) https://doi.org/10.1063/1.3033576
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Correlation of Beam Transport Characteristics and Mass Resolving Power to Analyzing Magnet Pole Piece Wear in Axcelis HE Ion Implanters
Ron Johnson; John Schuur; Randy Tysinger
AIP Conf. Proc. 1066, 156–158 (2008) https://doi.org/10.1063/1.3033580
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Manufacturing Assessment of an XeF2 In‐Situ Clean Process for Mitigation of Species Cross Contamination
James P. Dunn; James L. Rolland; Paul Lundquist; Steve Bishop
AIP Conf. Proc. 1066, 368–371 (2008) https://doi.org/10.1063/1.3033638
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Development of “Static” In‐Situ Implanter Chamber Cleaning
Sharad Yedave; Joe Sweeney; Oleg Byl; Shkelqim Letaj; Mike Wodjenski; Monica Hilgarth; Paul Marganski; Steve Bishop; David Eldridge; Robert Kaim
AIP Conf. Proc. 1066, 376–379 (2008) https://doi.org/10.1063/1.3033640
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Evaluation of Pre‐Amorphous Layer by Spectroscopic Ellipsometry
Satoshi Shibata; Fumitoshi Kawase; Akihiko Kitada; Takashi Kouzaki
AIP Conf. Proc. 1066, 190–193 (2008) https://doi.org/10.1063/1.3033589
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Electron Holography Characterization of Shallow Junction Fabricated By Diffusion‐less Process for Sub‐30 nm Gate‐Length MOSFETs
Nobuyuki Ikarashi; Kazuya Uejima; Takeo Ikezawa; Toshinori Fukai; Akio Toda; Masami Hane
AIP Conf. Proc. 1066, 71–74 (2008) https://doi.org/10.1063/1.3033686
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Optima XE Single Wafer High Energy Ion Implanter
Shu Satoh; Joseph Ferrara; Edward Bell; Shital Patel; Manny Sieradzki
AIP Conf. Proc. 1066, 273–276 (2008) https://doi.org/10.1063/1.3033612
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Plasma Doping—Enabling Technology for High Dose Logic and Memory Applications
T. Miller; L. Godet; G. D. Papasouliotis; V. Singh
AIP Conf. Proc. 1066, 457–460 (2008) https://doi.org/10.1063/1.3033661
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Carrier Density Profiling of Ultra‐Shallow Junction Layers Through Corrected C‐V Plotting
James Chen; Dimitar Dimitrov; Tatiana Dimitrova; Paul Timans; Jeff Gelpey; Steve McCoy; Wilfried Lerch; Silke Paul; Detlef Bolze
AIP Conf. Proc. 1066, 186–189 (2008) https://doi.org/10.1063/1.3033588
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Vertical Beam Angle Control: an Advancement/Requirement in Modern Ion Implant Manufacturing
Christian Krueger; Robert Rathmell; Dennis Kamenitsa; Bernhard Krimbacher
AIP Conf. Proc. 1066, 257–260 (2008) https://doi.org/10.1063/1.3033607
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Decreasing Beam Auto Tuning Interruption Events with In‐Situ Chemical Cleaning on Axcelis GSD
Dieter Fuchs; Stefan Spreitzer; Josef Vogl; Steve Bishop; David Eldridge; Robert Kaim
AIP Conf. Proc. 1066, 360–363 (2008) https://doi.org/10.1063/1.3033636
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Angular Distributions of Sputtered Atoms from Semiconductor Targets at Grazing Ion Beam Incidence Angles
M. Sekowski; A. Burenkov; J. Hernández‐Mangas; A. Martinez‐Limia; H. Ryssel
AIP Conf. Proc. 1066, 236–239 (2008) https://doi.org/10.1063/1.3033602
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vMask® Usage in Semiconductor Foundry Manufacturing
Ching I. Li; Hsien Hsiu Lai; Ron Liu; Chao Chun Chen; Y. R. Wang; Michael Chan; Chan Lon Yang; S. F. Tzou; Baonian Guo; Sungho Jo; Kyu‐ha Shim; Youn Ki Kim; Todd Henry
AIP Conf. Proc. 1066, 137–140 (2008) https://doi.org/10.1063/1.3033575
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Characterization of Charging Control of a Single Wafer High Current Spot Beam Implanter
Matthias Schmeide; Christoph Bukethal
AIP Conf. Proc. 1066, 121–124 (2008) https://doi.org/10.1063/1.3033571
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USJ Process Challenges for sub‐45 nm CMOS
Pankaj Kalra; Prashant Majhi; Hsing‐Huang Tseng; Larry Larson; Raj Jammy; Tsu‐Jae King Liu
AIP Conf. Proc. 1066, 55–62 (2008) https://doi.org/10.1063/1.3033683
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Surface Analytics in Support of the Development of Static AutoClean™—an In‐Situ Cleaning Process for Ion Implanters
Michele Stawasz; Sharad Yedave; Laura Hiscock; Joseph Sweeney; Robert Kaim
AIP Conf. Proc. 1066, 372–375 (2008) https://doi.org/10.1063/1.3033639
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The implementation of reflective assessment using Gibbs’ reflective cycle in assessing students’ writing skill
Lala Nurlatifah, Pupung Purnawarman, et al.
Classification data mining with Laplacian Smoothing on Naïve Bayes method
Ananda P. Noto, Dewi R. S. Saputro
Effect of coupling agent type on the self-cleaning and anti-reflective behaviour of advance nanocoating for PV panels application
Taha Tareq Mohammed, Hadia Kadhim Judran, et al.
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