ISMI metrology in collaboration with the University of Tennessee and Oak Ridge National Laboratory has begun investigating applications of high‐energy scanning electron microscope metrology to a semiconductor environment. The initial findings show potential for overlay metrology, non‐visible defect detection and an expanded definition of line edge roughness measurements. While this is a preliminary experiment to estimate the efficacy of high‐energy scanning electron microscopes for overlay metrology, the initial conclusion is that, at a minimum, a high‐energy scanning electron microscope has good potential as a reference measurement system for overlay, defect, and line edge roughness diagnostics.
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© 2005 American Institute of Physics.
2005
American Institute of Physics
