MOSFET threshold voltage is the most important parameter governing sub-0.25 μm MOS device operation. Critical device performance issues such as speed, off state current and active power depend on (1). The primary components that influence are oxide thickness oxide charge interface trap charge and channel dopant profile. Although conventional based CV methods have led many to believe that CV cannot be used for ultra-thin oxides, accurate methods for measuring and its components using both a hard probe and a high repeatability mercury probe are described in this paper.
Threshold voltage control of sub-0.25 μm processes using mercury gate MOS capacitors
R. J. Hillard, R. G. Mazur, J. C. Sherbondy, L. Peitersen, M. Wilson, R. Herlocher; Threshold voltage control of sub-0.25 μm processes using mercury gate MOS capacitors. AIP Conf. Proc. 24 November 1998; 449 (1): 240–244. https://doi.org/10.1063/1.56802
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