Photoanode nanostructure optimization in dye-sensitized solar cell

The rapid development of industries that use fossil fuels produces negative impacts on the environment. For the first time in human history, CO₂ levels in the atmosphere have doubled compared to the ice age. Renewable energy is one solution to reduce dependence on fossil fuels. One source of renewable energy is solar energy. This energy can be utilized using the Dye-Sensitized Solar Cell. DSSC is environmentally friendly, low cost, and can be grown on elastic thin films. DSSC consists of four main components, one of which is photoanode. Photoanode serves as a medium for photogeneration of electrons to produce an electric current. For better performance, DSSC was analytically modeled by several previous researchers. But only on macro parameters such as working temperature, solar intensity, and electron lifetime. It is necessary to make variations on the photoanode semiconductor material and nanostructure parameters to optimize DSSC performance. There are three best variations in a photoanode semiconductor material such as TiO₂, ZnO, Nb₂O₃. Further modeling of nanostructures photoanode constituent particles uses the constant overlap method. This modeling can describe nanostructural parameters such as diffusion coefficient, absorption coefficient, and porosity to describe J-V characteristics of DSSC. The simulation is done after the modeling results agreed well with the experimental results based on the reference. Simulation results illustrate the value of sunlight penetration depth that affects the short circuit current density. The short circuit current is proportional to the absorption coefficient and the diffusion coefficient. 0.41 porosity is the optimum value that produces maximum power. Photoanode semiconductor material based on the J-V characteristics of the best is TiO₂, ZnO, Nb₂O₃.