Structure defects in PV cells can be identified through I-V curve parameters: short circuit current, open circuit voltage, fill factor and efficiency. In converting high density radiant fluxes, structure heating affects significantly these parameters. For this reason constant temperature (25°C) is a necessary condition for correct characterization. In this paper, a method for recording optical and electronic parameters of PV cells in regimes of converting high density radiant fluxes, which excludes the effect of radiative heating of a device, is presented.

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