This paper presents our study on the effect of thermal treatment to bulk silicon properties using careful surface chemical treatments and passivation. The procedures used for estimating carrier lifetime in silicon include transient photoconductance decay (TPD), photoluminescence (PL) intensity and PL decay time imaging. To exclude any effect of graphite succeptor contamination on the measurements, 10 µm-thick silicon layer was removed from each side of the wafers by etching (texturing) in KOH+IPA solution. All the samples had been cleaned with SC-1 and SC-2 carefully and were passivated by deposition of a-Si:H thin layer. According to the results obtained, rapid thermal annealing within the temperature range of 380-700 °C has led to decrease in minority carrier lifetime. The difference in the rate of carrier lifetime degradation with annealing temperature for p- and n-type Si wafers was found. In both cases short-term heating of silicon up to a temperature of 700 °C led to significant lifetime degradation.
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13 September 2018
14TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-14)
16–18 April 2018
Puertollano, Spain
Research Article|
September 13 2018
Investigation of silicon wafers thermal degradation by photoluminescence decay measurements
Dmitry Kudryashov;
Dmitry Kudryashov
a)
a)Corresponding author: kudryashovda@spbau.ru
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Alexander Gudovskikh;
Alexander Gudovskikh
2
St. Petersburg Electrotechnical University “LETI”
, St. Petersburg, Russia
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Ekaterina Nikitina
Ekaterina Nikitina
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a)Corresponding author: kudryashovda@spbau.ru
AIP Conf. Proc. 2012, 040005 (2018)
Citation
Dmitry Kudryashov, Alexander Gudovskikh, Alexander Uvarov, Ekaterina Nikitina; Investigation of silicon wafers thermal degradation by photoluminescence decay measurements. AIP Conf. Proc. 13 September 2018; 2012 (1): 040005. https://doi.org/10.1063/1.5053513
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