An ion source was designed utilizing a planar magnetron with 2-inch diameter pure boron target. The discharge can operate both in DC and pulsed modes. Boron as a semiconductor has low conductivity at normal conditions, which still is sufficient to start low-current (2 mA) high-voltage (2000 V) DC discharge. Due to the target heat insulation, it gradually rises the temperature to 300 °C and more, enabling to apply high-current pulses to the discharge gap. An improved time- of-flight methodic was used to measure the ion species in the plasma and the beam. The ion composition of plasma was examined within a wide range of DC and pulse parameters: pulse duration of 5 - 250 µs, repetition rate of 20 - 5000 p.p.s., pulse current up to 100 A. It was shown that boron ions are mostly singly ionized, and their fraction may exceed 95% at certain conditions. The rest sort of ions are singly and doubly charged argon or krypton which were used as working gases.
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21 September 2018
Proceedings of the 17th International Conference on Ion Sources
15–20 September 2017
Geneva, Switzerland
Research Article|
September 21 2018
Magnetron discharge-based boron ion source Free
Alexey Vizir;
Alexey Vizir
a)
1
Institute of High Current Electronics, Siberian Branch of Russian Academy of Science
, 2/3 Academichesky Ave., Tomsk, 634055, Russia
a)Corresponding author: [email protected]
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Efim Oks;
Efim Oks
b)
1
Institute of High Current Electronics, Siberian Branch of Russian Academy of Science
, 2/3 Academichesky Ave., Tomsk, 634055, Russia
2
Tomsk State University of Control System and Radioelectronics
, 40 Lenin Ave., Tomsk, 634050, Russia
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Georgy Yushkov;
Georgy Yushkov
1
Institute of High Current Electronics, Siberian Branch of Russian Academy of Science
, 2/3 Academichesky Ave., Tomsk, 634055, Russia
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Maxim Shandrikov
Maxim Shandrikov
1
Institute of High Current Electronics, Siberian Branch of Russian Academy of Science
, 2/3 Academichesky Ave., Tomsk, 634055, Russia
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Alexey Vizir
1,a)
Efim Oks
1,2,b)
Georgy Yushkov
1
Maxim Shandrikov
1
1
Institute of High Current Electronics, Siberian Branch of Russian Academy of Science
, 2/3 Academichesky Ave., Tomsk, 634055, Russia
2
Tomsk State University of Control System and Radioelectronics
, 40 Lenin Ave., Tomsk, 634050, Russia
a)Corresponding author: [email protected]
AIP Conf. Proc. 2011, 090005 (2018)
Citation
Alexey Vizir, Efim Oks, Georgy Yushkov, Maxim Shandrikov; Magnetron discharge-based boron ion source. AIP Conf. Proc. 21 September 2018; 2011 (1): 090005. https://doi.org/10.1063/1.5053386
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