Carrier Multiplication (CM) is a Coulomb-driven non-radiative recombination mechanism which leads to the generation of multiple electron-hole pairs after absorption of a single high-energy photon. Recently a new CM process, termed space separated quantum cutting, was introduced to explain a set of new experiments conducted in dense arrays of silicon nanocrystals. The occurrence of this effect was hypothesized to generate the formation of Auger unaffected multiexciton configurations constituted by single electron-hole pairs distributed on different interacting naocrystals. In this work we discuss ab-initio results obtained by our group in the study of CM effects in systems of strongly interacting silicon nanocrystals. By solving a set of rate equations, we simulate the time evolution of the number of electron-hole pairs generated in dense arrays of silicon nanocrystals after absorption of high energy photons, by describing the circumstances under which CM dynamics can lead to the generation of Auger unaffected multiexciton configurations.
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Research Article|
July 20 2018
First-principle investigations of carrier multiplication in Si nanocrystals: A short review
Ivan Marri;
Ivan Marri
a)
1
CNR-Istituto di Nanoscienze-S3
, via Campi 213 A, 41125 Modena, Italy
a)Corresponding Author: [email protected]
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Stefano Ossicini
Stefano Ossicini
2
Dipartimento di Scienze e Metodi dell’Ingegneria, Universitá di Modena e Reggio Emilia
, Via Amendola 2 Pad. Morselli, 42122 Reggio Emilia, Italy and CNR-Istituto di Nanoscienze-S3, via Campi 213 A, 41125 Modena, Italy
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a)Corresponding Author: [email protected]
AIP Conf. Proc. 1990, 020002 (2018)
Citation
Ivan Marri, Stefano Ossicini; First-principle investigations of carrier multiplication in Si nanocrystals: A short review. AIP Conf. Proc. 20 July 2018; 1990 (1): 020002. https://doi.org/10.1063/1.5047756
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