We carried out a systematic comparison on the steady-state and transient electron transport properties in a monolayer silicon (silicene) and bulk silicon using the semi-classical ensemble Monte Carlo method. We found that at steady state the electron drift velocity in bulk Si is higher than silicene which can be attributed to the larger phonon scattering rate of silicene. However, the transient electron drift velocity of silicene can increase up to 2.6 × 107 cm/s at applied electric field of 40 kV/cm, which is 30 % higher than the peak overshoot value of bulk Si. This advantage is not preserved at steady state condition. Based on the drift velocity overshoot characteristics, we conclude that silicene offers a better advantage than bulk Si when the device dimension is less than 20 nm.
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11 September 2017
4TH INTERNATIONAL CONFERENCE ON THE ADVANCEMENT OF MATERIALS AND NANOTECHNOLOGY (ICAMN IV 2016)
9–11 November 2016
Langkawi, Malaysia
Research Article|
September 11 2017
Steady-state and transient electron transport in silicon: From bulk to monolayer
Keat Hoe Yeoh;
Keat Hoe Yeoh
a)
1
Department of Electrical and Electronic Engineering, Lee Kong Chian Faculty of Engineering and Science, University Tunku Abdul Rahman
, 43000 Kajang, Selangor, Malaysia
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Duu Sheng Ong
Duu Sheng Ong
2
Faculty of Engineering, Multimedia University
, Persiaran Multimedia, 63100 Cyberjaya, Selangor, Malaysia
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a)
Corresponding author: [email protected]
AIP Conf. Proc. 1877, 080003 (2017)
Citation
Keat Hoe Yeoh, Duu Sheng Ong; Steady-state and transient electron transport in silicon: From bulk to monolayer. AIP Conf. Proc. 11 September 2017; 1877 (1): 080003. https://doi.org/10.1063/1.4999893
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