The influence of p-n junction heating on dependence of the open circuit voltage on the photogenerated current density (Voc-Jg) has been observed and procedure for Voc correction has been suggested. Using this procedure the corrected Voc-Jg dependence has been obtained for triple-junction GaInP/GaAs/Ge solar cells. The shape of Voc-Jg dependence has been discussed, and it was suggested that it indicates the appearance of a counter EMF of about 10 mV at Jg = 100 A/cm2. It is assumed that this counter EMF is generated on some isotype heterointerface. The spectral method for determining the position of such heterointerface has been considered.

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