One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ∼5×5 cm2 polished samples.
Solar cells with gallium phosphide/silicon heterojunction
Maxime Darnon, Renaud Varache, Médéric Descazeaux, Thomas Quinci, Mickaël Martin, Thierry Baron, Delfina Muñoz; Solar cells with gallium phosphide/silicon heterojunction. AIP Conf. Proc. 28 September 2015; 1679 (1): 040003. https://doi.org/10.1063/1.4931514
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