Time dependence of carbon film deposition on $SnO2/Si$ using DC unbalanced magnetron sputtering Free

Carbon deposition on $SnO2$ layer has been demonstrated at low temperature using DC unbalanced magnetron-sputtering technique for various time depositions. Before carbon sputtering process, $SnO2$ thin layer is grown on silicon substrate by thermal evaporation method using high purity Sn wire and then fully oxidizes by dry $O2$ at 225°C. Carbon sputtering process was carried out at pressure of 4.6×10⁻² Torr by keeping the substrate temperature of 300 °C for sputtering deposition time of 1 to 4 hours. The properties of $SnO2/Si$ structure and carbon thin film on $SnO2$ is characterized using SEM, EDAX, XRD, FTIR, and Raman Spectra. SEM images and XRD spectra show that SnO2 thin film has uniformly growth on Si substrate and affected by annealing temperature. Raman and FTIR results confirm the formation of carbon-rich thin film on $SnO2$⁠. In addition, XRD spectra indicate that some structural change occur by increasing sputtering deposition time. Furthermore, the change of atomic structure due to the thermal annealing is analized by XRD spectra and Raman spectroscopy.