Spectroscopy analysis of graphene like deposition using DC unbalanced magnetron sputtering on $γ‐Al2O3$ buffer layer Free

In this work, graphene-like deposition using DC unbalanced magnetron-sputtering technique on $γ‐Al2O3$ layer at low temperature has been systematically studied. The $γ‐Al2O3$ was growth on silicon substrate using thermal evaporation of Al wire and continuing with dry oxidation of Al at 550 °C. Sputtering process were carried out using Fe-doped carbon pellet as a target by maintain the chamber pressure of 4.6×10⁻² Torr at substrate temperature of 300 °C for time deposition range of 1 to 4 hours. The quality of $Al2O3$ on Si(100) and the characteristic of carbon thin film on $γ‐Al2O3$ were analized by mean XRD, opctical microscopy, EDAX, FTIR, and Raman spectra. XRD and optical microscopy analysis shows that $Al2O3$ film is growth uniformly on Si substrate and forming the γ phase of $Al2O3$⁠. Raman and FTIR spectra confirm the formation of graphene like carbon layer on $Al2O3$⁠. Additionally, thermal annealing for some sample series have been performed to study their structural stability. The change of atomic structure due to thermal annealing were analized by XRD spectra. The quality and the number of graphene layers are investigated by using Raman spectra peaks analysis.