Micro‐photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high‐sensitivity sensor applications.

Topics
Photoluminescence, Quantum dots, Semiconductors
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© 2009 American Institute of Physics.
2009
American Institute of Physics