Temperature Dependence Of Current‐Voltage Characteristics Of Pt/InN Schottky Barrier Diodes

The Current‐Voltage (IV) measurements on Pt/InN Schottky barrier diodes in the temperature range 10–280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factor, the saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory. The ideality factor is temperature dependent, while the saturation current and the barrier height are not. The non conventional Richardson plot exhibits good linearity, corresponding to an activation energy of 2.08 eV and a Richardson constant of $18.7 A m−2 K−2.$ The Cheung’s method to estimate the value of a possible series resistance $RS$ yields a negligible resistance. From reverse‐bias IV analysis, it is found that the experimental carrier density $(ND)$ value increases with temperature.