Semiconductor Bloch equations (SBEs), which microscopically describe optical properties in terms of the dynamics of a Coulomb interacting, spin‐unpolarized electron‐hole plasma, can be solved in two limits: the coherent and the quasiequilibrium regimes. Recently, Nemec et al. [1] reported circularly polarized pump‐probe absorption spectra in the quasiequilibrium regime for carrier spin‐polarized bulk GaAs at room temperature, which lacked a suitable microscopic theoretical understanding. We have very recently explained their results by solving the spin‐SBEs in the quasiequilibrium regime (spin‐Bethe‐Salpeter equation), and accounted for spin‐dependent mechanisms of optical nonlinearity [2]. Here, we extend our theory to the microscopic calculation of Kerr and Faraday rotation in the quasiequilibrium regime, for which there are no experimental or theoretical results available.
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4 January 2010
PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors
27 July–1 August 2009
Rio de Janeiro (Brazil)
Research Article|
January 04 2010
Quasiequilibrium nonlinearities in Faraday and Kerr rotation from spin‐polarized carriers in GaAs Free
Arjun Joshua;
Arjun Joshua
Dept. of Physics, Indian Institute of Science, Bangalore 560012, India
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V. Venkataraman
V. Venkataraman
Dept. of Physics, Indian Institute of Science, Bangalore 560012, India
Search for other works by this author on:
Arjun Joshua
Dept. of Physics, Indian Institute of Science, Bangalore 560012, India
V. Venkataraman
Dept. of Physics, Indian Institute of Science, Bangalore 560012, India
AIP Conf. Proc. 1199, 387–388 (2010)
Citation
Arjun Joshua, V. Venkataraman; Quasiequilibrium nonlinearities in Faraday and Kerr rotation from spin‐polarized carriers in GaAs. AIP Conf. Proc. 4 January 2010; 1199 (1): 387–388. https://doi.org/10.1063/1.3295464
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