In this communication, Scanning Capacitance Spectroscopy (SCS) is used in order to characterize the electrical properties of thin dielectrics. The aim is to determine the best experimental conditions that lead to a reliable interpretation of SCS and to the best signal to noise ratio, with the objective of measuring the characteristics of the oxide (charges in the oxide, flat band voltage…). Comparisons are made with macroscopic C‐V curves obtained with an impedance analyzer to test the reliability of the results obtained by SCS. In particular, we study the role of the AFM laser and tip‐sample contact on the shape of the SCS (width, additional peaks…) and show that they introduce parasitic features which are not present in macroscopic C‐V curves. This leads to a difficult interpretation of SCS results, especially in the case where characteristic parameters of the oxide are to be extracted from SCS analysis.
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28 September 2009
FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2009
11–15 May 2009
Albany (New York)
Research Article|
September 28 2009
Nanoscale Characterization Of Ultra‐Thin Dielectrics Using Scanning Capacitance Microscopy Free
O. Ligor;
O. Ligor
Lyon Institute of Nanotechnology (INL), UMR CNRS 5270, Université de Lyon 7, Avenue Capelle, F‐69621 VILLEURBANNE, FRANCE
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B. Gautier;
B. Gautier
Lyon Institute of Nanotechnology (INL), UMR CNRS 5270, Université de Lyon 7, Avenue Capelle, F‐69621 VILLEURBANNE, FRANCE
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A. Descamps;
A. Descamps
Lyon Institute of Nanotechnology (INL), UMR CNRS 5270, Université de Lyon 7, Avenue Capelle, F‐69621 VILLEURBANNE, FRANCE
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D. Albertini;
D. Albertini
Lyon Institute of Nanotechnology (INL), UMR CNRS 5270, Université de Lyon 7, Avenue Capelle, F‐69621 VILLEURBANNE, FRANCE
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L. Militaru;
L. Militaru
Lyon Institute of Nanotechnology (INL), UMR CNRS 5270, Université de Lyon 7, Avenue Capelle, F‐69621 VILLEURBANNE, FRANCE
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N. Baboux
N. Baboux
Lyon Institute of Nanotechnology (INL), UMR CNRS 5270, Université de Lyon 7, Avenue Capelle, F‐69621 VILLEURBANNE, FRANCE
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O. Ligor
Lyon Institute of Nanotechnology (INL), UMR CNRS 5270, Université de Lyon 7, Avenue Capelle, F‐69621 VILLEURBANNE, FRANCE
B. Gautier
Lyon Institute of Nanotechnology (INL), UMR CNRS 5270, Université de Lyon 7, Avenue Capelle, F‐69621 VILLEURBANNE, FRANCE
A. Descamps
Lyon Institute of Nanotechnology (INL), UMR CNRS 5270, Université de Lyon 7, Avenue Capelle, F‐69621 VILLEURBANNE, FRANCE
D. Albertini
Lyon Institute of Nanotechnology (INL), UMR CNRS 5270, Université de Lyon 7, Avenue Capelle, F‐69621 VILLEURBANNE, FRANCE
L. Militaru
Lyon Institute of Nanotechnology (INL), UMR CNRS 5270, Université de Lyon 7, Avenue Capelle, F‐69621 VILLEURBANNE, FRANCE
N. Baboux
Lyon Institute of Nanotechnology (INL), UMR CNRS 5270, Université de Lyon 7, Avenue Capelle, F‐69621 VILLEURBANNE, FRANCE
AIP Conf. Proc. 1173, 193–197 (2009)
Citation
O. Ligor, B. Gautier, A. Descamps, D. Albertini, L. Militaru, N. Baboux; Nanoscale Characterization Of Ultra‐Thin Dielectrics Using Scanning Capacitance Microscopy. AIP Conf. Proc. 28 September 2009; 1173 (1): 193–197. https://doi.org/10.1063/1.3251219
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